TWI380373B - Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor - Google Patents

Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor Download PDF

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Publication number
TWI380373B
TWI380373B TW094137086A TW94137086A TWI380373B TW I380373 B TWI380373 B TW I380373B TW 094137086 A TW094137086 A TW 094137086A TW 94137086 A TW94137086 A TW 94137086A TW I380373 B TWI380373 B TW I380373B
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Taiwan
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TW094137086A
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TW200620489A (en
Inventor
Xiang Qi
Niraj Subba
Witold P Maszara
Zoran Krivokapic
Ming-Ren Lin
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Globalfoundries Us Inc
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Publication of TW200620489A publication Critical patent/TW200620489A/zh
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Publication of TWI380373B publication Critical patent/TWI380373B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6727—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having source or drain regions connected to bulk conducting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/794—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising conductive materials, e.g. silicided source, drain or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW094137086A 2004-11-10 2005-10-24 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor TWI380373B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/986,399 US7306997B2 (en) 2004-11-10 2004-11-10 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Publications (2)

Publication Number Publication Date
TW200620489A TW200620489A (en) 2006-06-16
TWI380373B true TWI380373B (en) 2012-12-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137086A TWI380373B (en) 2004-11-10 2005-10-24 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Country Status (7)

Country Link
US (2) US7306997B2 (enExample)
EP (1) EP1815531A1 (enExample)
JP (1) JP2008520097A (enExample)
KR (1) KR101122753B1 (enExample)
CN (1) CN101061587B (enExample)
TW (1) TWI380373B (enExample)
WO (1) WO2006052379A1 (enExample)

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Also Published As

Publication number Publication date
US20060099752A1 (en) 2006-05-11
TW200620489A (en) 2006-06-16
WO2006052379A1 (en) 2006-05-18
CN101061587B (zh) 2011-01-12
EP1815531A1 (en) 2007-08-08
JP2008520097A (ja) 2008-06-12
US8502283B2 (en) 2013-08-06
US20080054316A1 (en) 2008-03-06
KR20070084008A (ko) 2007-08-24
US7306997B2 (en) 2007-12-11
KR101122753B1 (ko) 2012-03-23
CN101061587A (zh) 2007-10-24

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