JP4845357B2 - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法 Download PDF

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Publication number
JP4845357B2
JP4845357B2 JP2004246374A JP2004246374A JP4845357B2 JP 4845357 B2 JP4845357 B2 JP 4845357B2 JP 2004246374 A JP2004246374 A JP 2004246374A JP 2004246374 A JP2004246374 A JP 2004246374A JP 4845357 B2 JP4845357 B2 JP 4845357B2
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Japan
Prior art keywords
silicon layer
single crystal
crystal silicon
bipolar transistor
oxide film
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Expired - Fee Related
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JP2004246374A
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English (en)
Japanese (ja)
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JP2006066577A (ja
JP2006066577A5 (enExample
Inventor
浩和 藤巻
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Lapis Semiconductor Co Ltd
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Lapis Semiconductor Co Ltd
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Application filed by Lapis Semiconductor Co Ltd filed Critical Lapis Semiconductor Co Ltd
Priority to JP2004246374A priority Critical patent/JP4845357B2/ja
Priority to US11/191,190 priority patent/US7205587B2/en
Publication of JP2006066577A publication Critical patent/JP2006066577A/ja
Priority to US11/638,551 priority patent/US7285455B2/en
Publication of JP2006066577A5 publication Critical patent/JP2006066577A5/ja
Application granted granted Critical
Publication of JP4845357B2 publication Critical patent/JP4845357B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/041—Manufacture or treatment of thin-film BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2004246374A 2004-08-26 2004-08-26 半導体装置とその製造方法 Expired - Fee Related JP4845357B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004246374A JP4845357B2 (ja) 2004-08-26 2004-08-26 半導体装置とその製造方法
US11/191,190 US7205587B2 (en) 2004-08-26 2005-07-28 Semiconductor device and method of producing the same
US11/638,551 US7285455B2 (en) 2004-08-26 2006-12-14 Method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004246374A JP4845357B2 (ja) 2004-08-26 2004-08-26 半導体装置とその製造方法

Publications (3)

Publication Number Publication Date
JP2006066577A JP2006066577A (ja) 2006-03-09
JP2006066577A5 JP2006066577A5 (enExample) 2007-01-18
JP4845357B2 true JP4845357B2 (ja) 2011-12-28

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JP2004246374A Expired - Fee Related JP4845357B2 (ja) 2004-08-26 2004-08-26 半導体装置とその製造方法

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US (2) US7205587B2 (enExample)
JP (1) JP4845357B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128428A (ja) * 2004-10-29 2006-05-18 Seiko Epson Corp 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法
JP2006156867A (ja) * 2004-12-01 2006-06-15 Seiko Epson Corp 半導体基板の製造方法および半導体装置の製造方法
US7986029B2 (en) * 2005-11-08 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Dual SOI structure
WO2008039495A1 (en) * 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
US8115254B2 (en) * 2007-09-25 2012-02-14 International Business Machines Corporation Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same
US7829971B2 (en) * 2007-12-14 2010-11-09 Denso Corporation Semiconductor apparatus
US20090201678A1 (en) * 2008-02-08 2009-08-13 Raley Jay F Heat sink for semiconductor light sources
JP4894910B2 (ja) * 2009-01-15 2012-03-14 株式会社デンソー 半導体装置の製造方法及び半導体装置並びにその半導体装置を内蔵する多層基板
US8093084B2 (en) 2009-04-30 2012-01-10 Freescale Semiconductor, Inc. Semiconductor device with photonics
CN102280451B (zh) * 2010-06-13 2014-03-19 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法
US8809156B1 (en) 2013-01-25 2014-08-19 International Business Machines Corporation Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications
US9478507B2 (en) 2013-03-27 2016-10-25 Qualcomm Incorporated Integrated circuit assembly with faraday cage
US8748245B1 (en) 2013-03-27 2014-06-10 Io Semiconductor, Inc. Semiconductor-on-insulator integrated circuit with interconnect below the insulator
US9466536B2 (en) * 2013-03-27 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator integrated circuit with back side gate
CN103426828A (zh) * 2013-07-12 2013-12-04 上海新储集成电路有限公司 一种基于绝缘体上硅材料的双极型高压cmos单多晶硅填充深沟道器件隔离工艺
US9431339B2 (en) 2014-02-19 2016-08-30 International Business Machines Corporation Wiring structure for trench fuse component with methods of fabrication
US9311442B2 (en) 2014-04-25 2016-04-12 Globalfoundries Inc. Net-voltage-aware optical proximity correction (OPC)
CN105097851A (zh) * 2014-05-04 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种cmos图像传感器及其制造方法和电子装置
CN112331673A (zh) * 2019-08-05 2021-02-05 广东美的白色家电技术创新中心有限公司 一种半导体芯片以及智能功率模块

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01189154A (ja) * 1988-01-25 1989-07-28 Hitachi Ltd 半導体装置及びその製造方法
US5212397A (en) * 1990-08-13 1993-05-18 Motorola, Inc. BiCMOS device having an SOI substrate and process for making the same
JPH0669430A (ja) 1992-08-18 1994-03-11 Fujitsu Ltd 半導体装置の製造方法
JP3644980B2 (ja) * 1993-09-06 2005-05-11 株式会社ルネサステクノロジ 半導体装置の製造方法
US5583368A (en) * 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
US6013936A (en) * 1998-08-06 2000-01-11 International Business Machines Corporation Double silicon-on-insulator device and method therefor
US6521974B1 (en) * 1999-10-14 2003-02-18 Hitachi, Ltd. Bipolar transistor and manufacturing method thereof
JP2001274234A (ja) * 2000-03-27 2001-10-05 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
DE10138648A1 (de) * 2001-08-07 2003-03-06 Infineon Technologies Ag Verfahren zum parallelen Herstellen eines MOS-Transistors und eines Bipolartransistors
US6936910B2 (en) * 2003-05-09 2005-08-30 International Business Machines Corporation BiCMOS technology on SOI substrates

Also Published As

Publication number Publication date
US7285455B2 (en) 2007-10-23
US20060046409A1 (en) 2006-03-02
US20070090400A1 (en) 2007-04-26
JP2006066577A (ja) 2006-03-09
US7205587B2 (en) 2007-04-17

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