JP2015133424A - 電子部品の製造方法 - Google Patents
電子部品の製造方法 Download PDFInfo
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- JP2015133424A JP2015133424A JP2014004537A JP2014004537A JP2015133424A JP 2015133424 A JP2015133424 A JP 2015133424A JP 2014004537 A JP2014004537 A JP 2014004537A JP 2014004537 A JP2014004537 A JP 2014004537A JP 2015133424 A JP2015133424 A JP 2015133424A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000001312 dry etching Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 10
- 238000002844 melting Methods 0.000 claims abstract description 10
- 239000003870 refractory metal Substances 0.000 claims description 64
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010931 gold Substances 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 13
- 239000010936 titanium Substances 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
最初に、本願発明の実施形態の内容を列記して説明する。
本願発明は、基板上に下部電極を形成する工程と、前記下部電極上に誘電体膜を形成する工程と、前記誘電体膜上にAuを含む上部電極を形成する工程と、前記上部電極の上面及び下面の少なくとも一方に、前記上部電極よりも融点が高い高融点金属層を形成する工程と、前記下部電極、前記誘電体膜、前記上部電極、及び前記高融点金属層を覆う絶縁膜を形成する工程と、前記絶縁膜をドライエッチングし前記上部電極又は前記高融点金属層を露出する開口を形成する工程と、を有する電子部品の製造方法である。高融点金属層は、絶縁膜の形成における温度によって再結晶化してクラスター間に間隙が発生することが起こり難い。このため、上部電極の上面及び下面の少なくとも一方に高融点金属層を形成することで、誘電体膜がエッチングされることを抑制でき、その結果、上部電極と下部電極との間の耐圧低下及び短絡を抑制することができる。
本願発明の実施形態に係る電子部品の製造方法の具体例を、以下に図面を参照しつつ説明する。なお、本願発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内での全ての変更が含まれることが意図される。また、本願発明の効果がある限りにおいて他の成分が含まれていてもよい。
12 GaAs系半導体層
14 第1絶縁膜
16 下部電極
18 誘電体膜
20 上部電極
22 間隙
24 高融点金属層
24a 高融点金属層
24b 高融点金属層
26 第2絶縁膜
28 開口
30 配線下地層
32 配線層
34 第3絶縁膜
36 第4絶縁膜
40 マスク層
42 マスク層
100 容量素子
200 容量素子
300 容量素子
Claims (5)
- 基板上に下部電極を形成する工程と、
前記下部電極上に誘電体膜を形成する工程と、
前記誘電体膜上にAuを含む上部電極を形成する工程と、
前記上部電極の上面及び下面の少なくとも一方に、前記上部電極よりも融点が高い高融点金属層を形成する工程と、
前記下部電極、前記誘電体膜、前記上部電極、及び前記高融点金属層を覆う絶縁膜を形成する工程と、
前記絶縁膜をドライエッチングし前記上部電極又は前記高融点金属層を露出する開口を形成する工程と、を有する電子部品の製造方法。 - 前記上部電極又は前記高融点金属層の表面上の前記開口内から前記絶縁膜上に延在して高融点金属からなる配線下地層を形成する工程と、
前記配線下地層上に配線層を形成する工程と、を有する請求項1に記載の電子部品の製造方法。 - 前記高融点金属層はTi、Pt、Ta、Mo、及びWのいずれかを含む、請求項1又は2に記載の電子部品の製造方法。
- 前記高融点金属層は前記上部電極の上面及び下面の少なくとも一方の全面に形成される、請求項1から3のいずれか1項に記載の電子部品の製造方法。
- 前記高融点金属層は前記上部電極の上面から側面を覆って形成される、請求項1から4のいずれか1項に記載の電子部品の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014004537A JP2015133424A (ja) | 2014-01-14 | 2014-01-14 | 電子部品の製造方法 |
US14/595,996 US20150200243A1 (en) | 2014-01-14 | 2015-01-13 | Method for fabricating electronic device |
US15/599,743 US20170256605A1 (en) | 2014-01-14 | 2017-05-19 | Method for fabricating electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014004537A JP2015133424A (ja) | 2014-01-14 | 2014-01-14 | 電子部品の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015133424A true JP2015133424A (ja) | 2015-07-23 |
JP2015133424A5 JP2015133424A5 (ja) | 2017-02-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014004537A Pending JP2015133424A (ja) | 2014-01-14 | 2014-01-14 | 電子部品の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US20150200243A1 (ja) |
JP (1) | JP2015133424A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018006620A (ja) * | 2016-07-05 | 2018-01-11 | 住友電工デバイス・イノベーション株式会社 | コンデンサの製造方法 |
JP2019033154A (ja) * | 2017-08-07 | 2019-02-28 | 住友電工デバイス・イノベーション株式会社 | キャパシタ構造の作製方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10008559B2 (en) | 2016-03-24 | 2018-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etching process control in forming MIM capacitor |
Citations (6)
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JPH0521435A (ja) * | 1990-11-29 | 1993-01-29 | Seiko Epson Corp | 半導体装置 |
JPH05102330A (ja) * | 1991-06-25 | 1993-04-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH05308104A (ja) * | 1992-04-30 | 1993-11-19 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH09289287A (ja) * | 1996-02-22 | 1997-11-04 | Sharp Corp | Mimキャパシタ及びその製造方法、並びに半導体装置 |
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JP2007103977A (ja) * | 2007-01-22 | 2007-04-19 | Renesas Technology Corp | 半導体集積回路装置 |
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-
2014
- 2014-01-14 JP JP2014004537A patent/JP2015133424A/ja active Pending
-
2015
- 2015-01-13 US US14/595,996 patent/US20150200243A1/en not_active Abandoned
-
2017
- 2017-05-19 US US15/599,743 patent/US20170256605A1/en not_active Abandoned
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JPH0521435A (ja) * | 1990-11-29 | 1993-01-29 | Seiko Epson Corp | 半導体装置 |
JPH05102330A (ja) * | 1991-06-25 | 1993-04-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH05308104A (ja) * | 1992-04-30 | 1993-11-19 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH09289287A (ja) * | 1996-02-22 | 1997-11-04 | Sharp Corp | Mimキャパシタ及びその製造方法、並びに半導体装置 |
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JP2019033154A (ja) * | 2017-08-07 | 2019-02-28 | 住友電工デバイス・イノベーション株式会社 | キャパシタ構造の作製方法 |
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US20170256605A1 (en) | 2017-09-07 |
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