PL3174105T3 - Struktura styku bramkowego nad bramką aktywną i sposób jej wykonania - Google Patents

Struktura styku bramkowego nad bramką aktywną i sposób jej wykonania

Info

Publication number
PL3174105T3
PL3174105T3 PL17151166.0T PL17151166T PL3174105T3 PL 3174105 T3 PL3174105 T3 PL 3174105T3 PL 17151166 T PL17151166 T PL 17151166T PL 3174105 T3 PL3174105 T3 PL 3174105T3
Authority
PL
Poland
Prior art keywords
gate
implementing
contact over
active
gate contact
Prior art date
Application number
PL17151166.0T
Other languages
English (en)
Inventor
Abhijit Jayant Pethe
Tahir Ghani
Mark Bohr
Clair Webb
Harry Gomez
Annalisa Cappellani
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporation filed Critical Intel Corporation
Publication of PL3174105T3 publication Critical patent/PL3174105T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H10W20/0693—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs by forming self-aligned vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
    • H10W20/4441—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal the principal metal being a refractory metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
PL17151166.0T 2012-09-19 2013-08-28 Struktura styku bramkowego nad bramką aktywną i sposób jej wykonania PL3174105T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/622,974 US9461143B2 (en) 2012-09-19 2012-09-19 Gate contact structure over active gate and method to fabricate same

Publications (1)

Publication Number Publication Date
PL3174105T3 true PL3174105T3 (pl) 2026-02-23

Family

ID=50273600

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17151166.0T PL3174105T3 (pl) 2012-09-19 2013-08-28 Struktura styku bramkowego nad bramką aktywną i sposób jej wykonania

Country Status (7)

Country Link
US (6) US9461143B2 (pl)
EP (4) EP3174105B1 (pl)
KR (5) KR102149451B1 (pl)
CN (3) CN107895712B (pl)
PL (1) PL3174105T3 (pl)
TW (1) TWI502745B (pl)
WO (1) WO2014046856A1 (pl)

Families Citing this family (148)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101853316B1 (ko) * 2012-03-29 2018-04-30 삼성전자주식회사 반도체 소자
US8877578B2 (en) * 2012-05-18 2014-11-04 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US9461143B2 (en) * 2012-09-19 2016-10-04 Intel Corporation Gate contact structure over active gate and method to fabricate same
WO2015026342A1 (en) 2013-08-21 2015-02-26 Intel Corporation Method and structure to contact tight pitch conductive layers with guided vias
US9153483B2 (en) * 2013-10-30 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor integrated circuit fabrication
US9397004B2 (en) * 2014-01-27 2016-07-19 GlobalFoundries, Inc. Methods for fabricating FinFET integrated circuits with simultaneous formation of local contact openings
US10700170B2 (en) * 2014-04-29 2020-06-30 Globalfoundries Inc. Multiple fin finFET with low-resistance gate structure
US10998228B2 (en) * 2014-06-12 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned interconnect with protection layer
US20160163646A1 (en) * 2014-12-05 2016-06-09 Qualcomm Incorporated Strapped contact in a semiconductor device
CN107004601B (zh) * 2014-12-22 2021-05-14 英特尔公司 受益于气隙集成电容的过孔自对准和短路改善
US9799560B2 (en) * 2015-03-31 2017-10-24 Qualcomm Incorporated Self-aligned structure
US9425097B1 (en) * 2015-04-29 2016-08-23 Globalfoundries Inc. Cut first alternative for 2D self-aligned via
US9397049B1 (en) * 2015-08-10 2016-07-19 International Business Machines Corporation Gate tie-down enablement with inner spacer
US9831090B2 (en) 2015-08-19 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for semiconductor device having gate spacer protection layer
TWI656566B (zh) * 2015-08-28 2019-04-11 聯華電子股份有限公司 半導體結構以及其製作方法
US10163879B2 (en) * 2015-10-05 2018-12-25 Samsung Electronics Co., Ltd. Semiconductor device having jumper pattern
US9793164B2 (en) * 2015-11-12 2017-10-17 Qualcomm Incorporated Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices
US10269697B2 (en) 2015-12-28 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11088030B2 (en) * 2015-12-30 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
DE102016118207B4 (de) 2015-12-30 2024-08-01 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleitervorrichtung und verfahren zu ihrer herstellung
US9761483B1 (en) * 2016-03-07 2017-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices, FinFET devices and methods of forming the same
US9548366B1 (en) 2016-04-04 2017-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Self aligned contact scheme
US10510599B2 (en) * 2016-04-13 2019-12-17 Taiwan Semiconductor Manufacturing Company Limited FinFET switch
US10096522B2 (en) 2016-05-06 2018-10-09 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy MOL removal for performance enhancement
US10277227B2 (en) * 2016-05-31 2019-04-30 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device layout
US9893171B2 (en) 2016-06-03 2018-02-13 International Business Machines Corporation Fin field effect transistor fabrication and devices having inverted T-shaped gate
US9741613B1 (en) * 2016-06-07 2017-08-22 Globalfoundries Inc. Method for producing self-aligned line end vias and related device
TWI695477B (zh) * 2016-07-07 2020-06-01 聯華電子股份有限公司 半導體結構及其製作方法
KR102517568B1 (ko) 2016-09-28 2023-04-03 삼성전자주식회사 반도체 장치
US11227766B2 (en) * 2016-09-30 2022-01-18 Intel Corporation Metal oxide nanoparticles as fillable hardmask materials
KR102472135B1 (ko) 2016-10-06 2022-11-29 삼성전자주식회사 집적회로 소자 및 그 제조 방법
US9881926B1 (en) * 2016-10-24 2018-01-30 International Business Machines Corporation Static random access memory (SRAM) density scaling by using middle of line (MOL) flow
US9985109B2 (en) 2016-10-25 2018-05-29 International Business Machines Corporation FinFET with reduced parasitic capacitance
US9941162B1 (en) 2016-11-17 2018-04-10 Globalfoundries Inc. Self-aligned middle of the line (MOL) contacts
US10879120B2 (en) * 2016-11-28 2020-12-29 Taiwan Semiconductor Manufacturing Self aligned via and method for fabricating the same
DE102017118364B4 (de) 2016-11-29 2021-10-14 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren mit Herstellung von Source/Drain- und Gate-Kontakten und Struktur mit solchen
US10424664B2 (en) 2016-12-14 2019-09-24 Globalfoundries Inc. Poly gate extension source to body contact
US9929048B1 (en) 2016-12-22 2018-03-27 Globalfoundries Inc. Middle of the line (MOL) contacts with two-dimensional self-alignment
JP6923277B2 (ja) 2016-12-23 2021-08-25 インテル・コーポレーション 高度なリソグラフィおよび自己組織化デバイス
CN110024103B (zh) * 2016-12-29 2023-06-30 英特尔公司 自对准通孔
US10026824B1 (en) 2017-01-18 2018-07-17 Globalfoundries Inc. Air-gap gate sidewall spacer and method
US10283406B2 (en) 2017-01-23 2019-05-07 International Business Machines Corporation Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains
CN108573926B (zh) * 2017-03-09 2020-01-21 联华电子股份有限公司 半导体存储装置以及其制作方法
US11276767B2 (en) 2017-03-15 2022-03-15 International Business Machines Corporation Additive core subtractive liner for metal cut etch processes
US10950605B2 (en) 2017-03-24 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
KR102308779B1 (ko) 2017-04-10 2021-10-05 삼성전자주식회사 이종 컨택들을 구비하는 집적 회로 및 이를 포함하는 반도체 장치
US10304728B2 (en) * 2017-05-01 2019-05-28 Advanced Micro Devices, Inc. Double spacer immersion lithography triple patterning flow and method
US10269636B2 (en) * 2017-05-26 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10522392B2 (en) * 2017-05-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
KR102336827B1 (ko) * 2017-06-08 2021-12-09 삼성전자주식회사 반도체 장치
KR102307127B1 (ko) * 2017-06-14 2021-10-05 삼성전자주식회사 반도체 소자
US10211302B2 (en) * 2017-06-28 2019-02-19 International Business Machines Corporation Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts
US10128334B1 (en) 2017-08-09 2018-11-13 Globalfoundries Inc. Field effect transistor having an air-gap gate sidewall spacer and method
KR102360410B1 (ko) * 2017-08-30 2022-02-08 삼성전자주식회사 반도체 장치
US10515896B2 (en) * 2017-08-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for semiconductor device and methods of fabrication thereof
KR102469885B1 (ko) 2017-09-11 2022-11-22 삼성전자주식회사 반도체 장치
KR102494918B1 (ko) 2017-09-12 2023-02-02 삼성전자주식회사 반도체 소자
TW201921498A (zh) * 2017-09-27 2019-06-01 美商微材料有限責任公司 選擇性氧化鋁蝕刻的使用
US10381480B2 (en) 2017-09-27 2019-08-13 International Business Machines Corporation Reliable gate contacts over active areas
KR102343219B1 (ko) * 2017-11-15 2021-12-23 삼성전자주식회사 반도체 장치
US10910313B2 (en) * 2017-11-16 2021-02-02 Samsung Electronics Co., Ltd. Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch
US10529624B2 (en) 2017-11-21 2020-01-07 International Business Machines Corporation Simple contact over gate on active area
US10867833B2 (en) * 2017-11-30 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Buried metal for FinFET device and method
US10796951B2 (en) 2017-11-30 2020-10-06 Intel Corporation Etch-stop layer topography for advanced integrated circuit structure fabrication
US11462436B2 (en) 2017-11-30 2022-10-04 Intel Corporation Continuous gate and fin spacer for advanced integrated circuit structure fabrication
US11411095B2 (en) 2017-11-30 2022-08-09 Intel Corporation Epitaxial source or drain structures for advanced integrated circuit structure fabrication
TWI866183B (zh) 2017-11-30 2024-12-11 美商英特爾股份有限公司 用於先進積體電路結構製造的鰭切割和鰭修整隔離
DE102018107721B4 (de) 2017-11-30 2023-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren
TWI817576B (zh) 2017-11-30 2023-10-01 美商英特爾股份有限公司 用於先進積體電路結構製造之異質金屬線組成
TW202425290A (zh) * 2017-11-30 2024-06-16 美商英特爾股份有限公司 用於先進積體電路結構製造之互連線的插塞
DE102018128925B4 (de) 2017-11-30 2024-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
US10796968B2 (en) 2017-11-30 2020-10-06 Intel Corporation Dual metal silicide structures for advanced integrated circuit structure fabrication
TWI835515B (zh) 2017-11-30 2024-03-11 美商英特爾股份有限公司 用於先進積體電路結構製造的主動閘極結構上方的接觸
DE102018126911A1 (de) 2017-11-30 2019-06-06 Intel Corporation Gate-Schnitt und Finnentrimmisolation für fortschrittliche Integrierter-Schaltkreis-Struktur-Fertigung
US10756204B2 (en) 2017-11-30 2020-08-25 Intel Corporation Fin trim isolation with single gate spacing for advanced integrated circuit structure fabrication
US10734379B2 (en) 2017-11-30 2020-08-04 Intel Corporation Fin end plug structures for advanced integrated circuit structure fabrication
US10707133B2 (en) 2017-11-30 2020-07-07 Intel Corporation Trench plug hardmask for advanced integrated circuit structure fabrication
US10243053B1 (en) 2018-01-22 2019-03-26 Globalfoundries Inc. Gate contact structure positioned above an active region of a transistor device
TWI766949B (zh) * 2018-02-22 2022-06-11 美商英特爾股份有限公司 先進微影及自聚合裝置
TWI898215B (zh) * 2018-02-22 2025-09-21 美商英特爾股份有限公司 先進微影及自聚合裝置
TWI806638B (zh) * 2018-02-22 2023-06-21 美商英特爾股份有限公司 先進微影及自聚合裝置
TWI851559B (zh) 2018-03-12 2024-08-11 美商應用材料股份有限公司 形成半導體元件的方法
US10388747B1 (en) 2018-03-28 2019-08-20 Globalfoundries Inc. Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structure
US10573724B2 (en) 2018-04-10 2020-02-25 International Business Machines Corporation Contact over active gate employing a stacked spacer
US11152347B2 (en) 2018-04-13 2021-10-19 Qualcomm Incorporated Cell circuits formed in circuit cells employing offset gate cut areas in a non-active area for routing transistor gate cross-connections
US10818762B2 (en) * 2018-05-25 2020-10-27 Advanced Micro Devices, Inc. Gate contact over active region in cell
US10685872B2 (en) * 2018-05-30 2020-06-16 International Business Machines Corporation Electrically isolated contacts in an active region of a semiconductor device
US10770388B2 (en) 2018-06-15 2020-09-08 International Business Machines Corporation Transistor with recessed cross couple for gate contact over active region integration
US20200020688A1 (en) * 2018-07-13 2020-01-16 Qualcomm Incorporated Integrated circuits employing varied gate topography between an active gate region(s) and a field gate region(s) in a gate(s) for reduced gate layout parasitic capacitance, and related methods
CN110739265B (zh) * 2018-07-18 2022-07-15 中芯国际集成电路制造(北京)有限公司 半导体结构及其形成方法
KR102520599B1 (ko) 2018-07-23 2023-04-11 삼성전자주식회사 반도체 소자
US10593593B2 (en) 2018-07-27 2020-03-17 Globalfoundries Inc. Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation
US10672770B2 (en) * 2018-08-14 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure
US11437284B2 (en) 2018-08-31 2022-09-06 Applied Materials, Inc. Contact over active gate structure
KR102609372B1 (ko) 2018-08-31 2023-12-06 삼성전자주식회사 반도체 소자
US10930555B2 (en) 2018-09-05 2021-02-23 Applied Materials, Inc. Contact over active gate structure
US10930556B2 (en) 2018-09-05 2021-02-23 Applied Materials, Inc. Contact over active gate structure
EP3624178A1 (en) * 2018-09-11 2020-03-18 IMEC vzw Gate, contact and fin cut method
US11393754B2 (en) 2018-09-28 2022-07-19 Intel Corporation Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication
US10665692B2 (en) 2018-10-24 2020-05-26 International Business Machines Corporation Non-self aligned gate contacts formed over the active region of a transistor
US10892338B2 (en) 2018-10-24 2021-01-12 Globalfoundries Inc. Scaled gate contact and source/drain cap
US10943990B2 (en) 2018-10-25 2021-03-09 International Business Machines Corporation Gate contact over active enabled by alternative spacer scheme and claw-shaped cap
US10707127B2 (en) 2018-11-06 2020-07-07 International Business Machines Corporation Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors
US10811319B2 (en) 2018-11-29 2020-10-20 Globalfoundries Inc. Middle of line structures
US10879400B2 (en) * 2018-12-24 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of manufacturing the same
US11004687B2 (en) 2019-02-11 2021-05-11 Applied Materials, Inc. Gate contact over active processes
US11437273B2 (en) * 2019-03-01 2022-09-06 Micromaterials Llc Self-aligned contact and contact over active gate structures
US10832961B1 (en) 2019-04-22 2020-11-10 International Business Machines Corporation Sacrificial gate spacer regions for gate contacts formed over the active region of a transistor
CN111916391A (zh) * 2019-05-09 2020-11-10 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11031389B2 (en) 2019-06-11 2021-06-08 Globalfoundries U.S. Inc. Semiconductor structures over active region and methods of forming the structures
DE102019131408B4 (de) 2019-06-28 2025-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Verbesserte Kontaktierung von Metallleitungen bei Fehlausrichtung von BEOL-Durchkontaktierungen
CN112151497B (zh) 2019-06-28 2023-08-22 台湾积体电路制造股份有限公司 半导体结构以及形成半导体结构的方法
US12206001B2 (en) * 2019-07-30 2025-01-21 Qualcomm Incorporated FinFET semiconductor device
US11004750B2 (en) 2019-09-16 2021-05-11 International Business Machines Corporation Middle of the line contact formation
KR102880640B1 (ko) 2019-09-19 2025-11-04 도쿄엘렉트론가부시키가이샤 반도체 장치의 제작 방법
US11205590B2 (en) 2019-09-21 2021-12-21 International Business Machines Corporation Self-aligned contacts for MOL
US12080639B2 (en) * 2019-09-23 2024-09-03 Intel Corporation Contact over active gate structures with metal oxide layers to inhibit shorting
US10930568B1 (en) 2019-09-23 2021-02-23 International Business Machines Corporation Method and structure to improve overlay margin of non-self-aligned contact in metallization layer
US11239115B2 (en) 2019-10-30 2022-02-01 International Business Machines Corporation Partial self-aligned contact for MOL
US11264419B2 (en) * 2019-12-30 2022-03-01 Omnivision Technologies, Inc. Image sensor with fully depleted silicon on insulator substrate
US11164782B2 (en) 2020-01-07 2021-11-02 International Business Machines Corporation Self-aligned gate contact compatible cross couple contact formation
KR102802195B1 (ko) 2020-03-27 2025-04-30 삼성전자주식회사 집적회로 소자
US11973121B2 (en) 2020-03-27 2024-04-30 Intel Corporation Device contacts in integrated circuit structures
US12191202B2 (en) * 2020-05-15 2025-01-07 Tokyo Electron Limited Contact openings in semiconductor devices
CN114068481B (zh) * 2020-07-31 2025-08-01 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US12272731B2 (en) * 2020-09-22 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Middle-of-line interconnect structure and manufacturing method
US11527614B2 (en) 2021-03-09 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with conductive structure and method for manufacturing the same
KR20220158340A (ko) * 2021-05-24 2022-12-01 삼성전자주식회사 게이트 구조체를 갖는 반도체 소자들 및 그 형성 방법
US20220392840A1 (en) * 2021-06-04 2022-12-08 Intel Corporation Conductive via structures for gate contact or trench contact
US20220390990A1 (en) * 2021-06-04 2022-12-08 Intel Corporation Spacer self-aligned via structures for gate contact or trench contact
US20220399233A1 (en) * 2021-06-14 2022-12-15 Intel Corporation Stent and wrap contact
US12364001B2 (en) * 2021-06-14 2025-07-15 Intel Corporation Integrated circuit structures with backside gate partial cut or trench contact partial cut
US20220415792A1 (en) * 2021-06-24 2022-12-29 Intel Corporation Inverse taper via to self-aligned gate contact
US20230008496A1 (en) * 2021-07-09 2023-01-12 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structure for semiconductor device
US12046670B2 (en) 2021-09-28 2024-07-23 Globalfoundries U.S. Inc. Semiconductor device having a gate contact over an active region
US12107132B2 (en) 2021-09-30 2024-10-01 International Business Machines Corporation Source/drain contact positioning under power rail
US11855191B2 (en) 2021-10-06 2023-12-26 International Business Machines Corporation Vertical FET with contact to gate above active fin
CN115188671B (zh) * 2022-01-27 2025-02-18 聚芯半导体科技(深圳)有限公司 功率半导体结构及其制造方法
US20230282574A1 (en) * 2022-03-03 2023-09-07 Intel Corporation Interconnect feature contacted within a recess
US12324217B2 (en) 2022-03-30 2025-06-03 Globalfoundries U.S. Inc. Laterally diffused metal-oxide semiconductor with gate contact
US12557625B2 (en) 2022-03-31 2026-02-17 Intel Corporation Spacer self-aligned via structures using directed self assembly for gate contact or trench contact
US12406907B2 (en) 2022-04-15 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with conductive_structure
US12581702B2 (en) 2022-06-24 2026-03-17 International Business Machines Corporation Common self aligned gate contact for stacked transistor structures
US20240038658A1 (en) * 2022-07-26 2024-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US20240063223A1 (en) * 2022-08-22 2024-02-22 International Business Machines Corporation Staggered pitch stacked vertical transport field-effect transistors
KR20240030634A (ko) * 2022-08-31 2024-03-07 에스케이하이닉스 주식회사 씨모스 장치, 씨모스 장치의 제조방법 및 씨모스 장치를 포함하는 반도체 메모리 장치
US20240088030A1 (en) * 2022-09-13 2024-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid cut metal gate to achieve minimum cell pitches, reducing routing and rising the yield
US20250125250A1 (en) * 2023-10-12 2025-04-17 International Business Machines Corporation Line-via-line structure for bspdn

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336564A (ja) 1986-07-31 1988-02-17 Nec Corp 半導体装置の製造方法
JP2778600B2 (ja) 1990-03-20 1998-07-23 富士通株式会社 半導体装置の製造方法
JPH08181323A (ja) 1994-12-27 1996-07-12 Hitachi Ltd 半導体装置及びその製造方法
US5780339A (en) * 1997-05-02 1998-07-14 Vanguard International Semiconductor Corporation Method for fabricating a semiconductor memory cell in a DRAM
US8713641B1 (en) 1998-12-08 2014-04-29 Nomadix, Inc. Systems and methods for authorizing, authenticating and accounting users having transparent computer access to a network using a gateway device
JP2001102550A (ja) * 1999-09-02 2001-04-13 Samsung Electronics Co Ltd 自己整合コンタクトを有する半導体メモリ装置及びその製造方法
US6445050B1 (en) * 2000-02-08 2002-09-03 International Business Machines Corporation Symmetric device with contacts self aligned to gate
KR100363091B1 (ko) * 2000-06-27 2002-11-30 삼성전자 주식회사 자기정합 콘택을 갖는 반도체 메모리소자 및 그 제조방법
JP3833903B2 (ja) * 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
JP3669919B2 (ja) 2000-12-04 2005-07-13 シャープ株式会社 半導体装置の製造方法
JP4907014B2 (ja) * 2001-06-22 2012-03-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US6613623B1 (en) * 2001-08-20 2003-09-02 Taiwan Semiconductor Manufacturing Company High fMAX deep submicron MOSFET
KR100487950B1 (ko) * 2003-02-03 2005-05-06 삼성전자주식회사 활성영역과 중첩되는 게이트 전극 상에 배치된 콘택홀을갖는 반도체 소자
JP2004266185A (ja) * 2003-03-04 2004-09-24 Renesas Technology Corp 半導体装置およびその製造方法
KR100487567B1 (ko) 2003-07-24 2005-05-03 삼성전자주식회사 핀 전계효과 트랜지스터 형성 방법
US7173338B2 (en) * 2004-03-06 2007-02-06 International Business Machines Corporation Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processing
US7701018B2 (en) * 2004-03-19 2010-04-20 Nec Corporation Semiconductor device and method for manufacturing same
JP4401874B2 (ja) * 2004-06-21 2010-01-20 株式会社ルネサステクノロジ 半導体装置
KR20060077063A (ko) * 2004-12-30 2006-07-05 매그나칩 반도체 유한회사 구리 공정을 이용한 씨모스이미지센서 및 그의 제조 방법
CN1855508A (zh) * 2005-04-18 2006-11-01 力晶半导体股份有限公司 非挥发性存储器及其制造方法以及其操作方法
US7335943B2 (en) 2005-05-06 2008-02-26 Atmel Corporation Ultrascalable vertical MOS transistor with planar contacts
KR100618908B1 (ko) * 2005-08-12 2006-09-05 삼성전자주식회사 게이트 저항을 개선한 반도체 소자 및 제조 방법
CN1956186A (zh) * 2005-10-27 2007-05-02 松下电器产业株式会社 半导体装置及其制造方法
DE102005052000B3 (de) * 2005-10-31 2007-07-05 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit einer Kontaktstruktur auf der Grundlage von Kupfer und Wolfram
JP4751705B2 (ja) * 2005-11-18 2011-08-17 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4917387B2 (ja) * 2006-08-28 2012-04-18 ラピスセミコンダクタ株式会社 不揮発性半導体記憶装置およびその製造方法
JP2008091638A (ja) * 2006-10-02 2008-04-17 Nec Electronics Corp 電子装置およびその製造方法
US8120128B2 (en) * 2007-10-12 2012-02-21 Panasonic Corporation Optical device
US20090108359A1 (en) * 2007-10-31 2009-04-30 Agere Systems Inc. A semiconductor device and method of manufacture therefor
JP2009111200A (ja) * 2007-10-31 2009-05-21 Panasonic Corp 半導体装置及びその製造方法
KR101408877B1 (ko) 2007-12-03 2014-06-17 삼성전자주식회사 트랜지스터, 고전압 트랜지스터 및 상기 고전압트랜지스터를 구비한 디스플레이 구동 집적회로
US7932577B2 (en) 2007-12-31 2011-04-26 Silicon Laboratories, Inc. Circuit device and method of forming a circuit device having a reduced peak current density
US7915659B2 (en) * 2008-03-06 2011-03-29 Micron Technology, Inc. Devices with cavity-defined gates and methods of making the same
JP2010219139A (ja) 2009-03-13 2010-09-30 Elpida Memory Inc 半導体装置及びその製造方法
US8754533B2 (en) * 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US7960282B2 (en) * 2009-05-21 2011-06-14 Globalfoundries Singapore Pte. Ltd. Method of manufacture an integrated circuit system with through silicon via
KR20100134178A (ko) 2009-06-15 2010-12-23 이환종 콘크리트 구조물의 신축이음장치
JP5434360B2 (ja) * 2009-08-20 2014-03-05 ソニー株式会社 半導体装置及びその製造方法
US8436404B2 (en) 2009-12-30 2013-05-07 Intel Corporation Self-aligned contacts
JP2011192744A (ja) * 2010-03-12 2011-09-29 Panasonic Corp 半導体装置及びその製造方法
CN102201409A (zh) * 2010-03-24 2011-09-28 万国半导体(开曼)股份有限公司 具有钨间隔层的功率mosfet器件及其制造方法
KR101718981B1 (ko) 2010-06-30 2017-03-23 삼성전자주식회사 콘택 플러그를 포함하는 반도체 소자
JP5542550B2 (ja) * 2010-07-08 2014-07-09 株式会社東芝 抵抗変化メモリ
US8358012B2 (en) 2010-08-03 2013-01-22 International Business Machines Corporation Metal semiconductor alloy structure for low contact resistance
KR101800438B1 (ko) * 2010-11-05 2017-11-23 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
US8084311B1 (en) 2010-11-17 2011-12-27 International Business Machines Corporation Method of forming replacement metal gate with borderless contact and structure thereof
CN102468226B (zh) * 2010-11-18 2014-08-20 中国科学院微电子研究所 一种半导体结构及其制造方法
JP5864054B2 (ja) * 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
US8536656B2 (en) * 2011-01-10 2013-09-17 International Business Machines Corporation Self-aligned contacts for high k/metal gate process flow
CN102593000B (zh) * 2011-01-13 2015-01-14 中国科学院微电子研究所 半导体器件及其制造方法
JP5858933B2 (ja) * 2011-02-02 2016-02-10 ローム株式会社 半導体装置
CN102420172B (zh) * 2011-05-13 2014-02-05 上海华力微电子有限公司 用于提高半导体器件性能的在浅沟槽上形成接触孔的方法
US8564030B2 (en) * 2011-06-10 2013-10-22 Advanced Micro Devices Self-aligned trench contact and local interconnect with replacement gate process
CN102437090B (zh) * 2011-07-12 2015-01-14 上海华力微电子有限公司 无金属阻挡层的铜后道互连工艺
KR101801380B1 (ko) 2011-12-22 2017-11-27 인텔 코포레이션 반도체 구조
CN102543857A (zh) * 2012-02-28 2012-07-04 上海华力微电子有限公司 Sram共享接触孔的形成方法
US9461143B2 (en) * 2012-09-19 2016-10-04 Intel Corporation Gate contact structure over active gate and method to fabricate same

Also Published As

Publication number Publication date
US10192783B2 (en) 2019-01-29
EP3514836B1 (en) 2023-09-20
US9461143B2 (en) 2016-10-04
CN104584222A (zh) 2015-04-29
EP2898532A4 (en) 2016-06-15
US20250233020A1 (en) 2025-07-17
KR101996710B1 (ko) 2019-07-04
EP3514836A3 (en) 2019-09-25
EP2898532A1 (en) 2015-07-29
KR20150034191A (ko) 2015-04-02
KR20180125034A (ko) 2018-11-21
TW201417290A (zh) 2014-05-01
US12278144B2 (en) 2025-04-15
EP2898532B1 (en) 2024-11-06
CN107895712B (zh) 2022-08-12
US20190115257A1 (en) 2019-04-18
EP4002485A1 (en) 2022-05-25
US20140077305A1 (en) 2014-03-20
CN107425065A (zh) 2017-12-01
KR20190122886A (ko) 2019-10-30
KR101682317B1 (ko) 2016-12-05
KR20200103864A (ko) 2020-09-02
KR102149451B1 (ko) 2020-08-28
KR20160138592A (ko) 2016-12-05
US20170004998A1 (en) 2017-01-05
US11004739B2 (en) 2021-05-11
KR102037278B1 (ko) 2019-10-29
EP3174105B1 (en) 2025-10-01
US20260026325A1 (en) 2026-01-22
CN107895712A (zh) 2018-04-10
EP3514836A2 (en) 2019-07-24
TWI502745B (zh) 2015-10-01
CN107425065B (zh) 2021-06-08
EP3174105A1 (en) 2017-05-31
KR102221448B1 (ko) 2021-03-02
CN104584222B (zh) 2018-01-26
US20210210385A1 (en) 2021-07-08
WO2014046856A1 (en) 2014-03-27

Similar Documents

Publication Publication Date Title
PL3174105T3 (pl) Struktura styku bramkowego nad bramką aktywną i sposób jej wykonania
EP2767985A4 (en) CONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREFOR
EP2747093A4 (en) CONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREFOR
BR112013015761A2 (pt) dispositivo semicondutor e método para fabricar o mesmo
PL2978419T3 (pl) Kompozycje do zwiększania żywotności komórek i metody ich stosowania
PL2755389T3 (pl) Sposób predykcji inter i urządzenie do niego
BR112014027348A2 (pt) compostos agonistas duplos gip-glp-1 e métodos
BR112012027159A2 (pt) estrutura e método
PL2825573T3 (pl) Telecheliczna poliolefina i jej wytwarzanie
DK2761126T3 (da) Wellbore stimulation assemblies and methods of using the same
EP2677539A4 (en) Semiconductor device and process for manufacture thereof
TWI560881B (en) Semiconductor device and method of fabricating high voltage semiconductor device
EP2973789A4 (en) PROTECTED ELECTRODE STRUCTURES AND METHOD THEREFOR
PL4084478T3 (pl) Sposób podziału bloku i urządzenie dokodujące
PL2865038T3 (pl) Elektroda dwubiegunowa i sposób jej wytwarzania
EP2754907A4 (en) ROLLER BEARING CAGE AND ROLLER BEARING
EP2688102A4 (en) Semiconductor device and manufacturing method therefor
PL2729151T3 (pl) Kompozycja farmaceutyczna, sposoby leczenia i jej zastosowania
BR112014003758A2 (pt) estrutura de edifício e edifício
EP3065787C0 (en) DISINFECTANT COMPOSITION AND WIPES WITH REDUCED CONTACT TIME
BR112014010450A2 (pt) composição e método
PL3536161T3 (pl) Zaawansowane formowanie i chłodzenie gumy
PL2830654T3 (pl) Sposoby i kompozycje do leczenia zapalenia
IL228030B (en) Compounds for treating hyperuricemia and metabolic disorders associated with hyperuricemia
GB2494358B (en) Bipolar transistor structure and method of forming the structure