KR960001849A - 반도체 장치, 그의 제조 방법, 및 그를 포함하는 액정 표시 장치 - Google Patents

반도체 장치, 그의 제조 방법, 및 그를 포함하는 액정 표시 장치 Download PDF

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KR960001849A
KR960001849A KR1019950016315A KR19950016315A KR960001849A KR 960001849 A KR960001849 A KR 960001849A KR 1019950016315 A KR1019950016315 A KR 1019950016315A KR 19950016315 A KR19950016315 A KR 19950016315A KR 960001849 A KR960001849 A KR 960001849A
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silicon film
crystalline silicon
liquid crystal
catalytic element
thin film
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다까마사 코오사이
나오끼 마끼따
토루 타까야마
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쯔지 하루오
샤프 가부시끼가이샤
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

액정 표시 장치는; 액정층, 상기 액정층을 개재시킨 한상의 기판들, 상기 한쌍의 기판들 중 하나에 매트릭스상으로 배열된 복수의 화소 전극들, 및 상기 복수의 화소 전극들에 각각 접속된 복수의 제1박막 트랜지스터들을 포함하는 표시부; 및 상기 제1박막 트랜지스터가 배치된 기판상에 배열되어 제2박막 트랜지스터를 가지며, 상기 표시부를 구동시키도록 배열된 주변 구동 회로를 포함한다. 제1박막 트랜지스터들이 각각 제1결정성 규소막으로 형성된 제1채널층을 포함하고, 상기 제2박막 트랜지스터는 상기 제1결정성 규소막의 이동도보다 더 높은 이동도를 가진 제2결정성 규소막으로 형성된 제2채널층을 포함한다. 제2결정성 규소막이 결정화를 촉진시키기 위한 촉매 원소를 포함한다.

Description

반도체 장치, 그의 제조 방법, 및 그를 포함하는 액정 표시 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 단일 기판상에 형성된 본 발명에 따른 LCD 및 전기 광학 시스템을 포함하는 전자 장치의 블럭도.
제2A도 내지 제2I도는 본 발명에 따른 방법으로 LCD의 액티브 매트릭스 기판상에 형성되는 주변 구동 회로용 TFT의 제조 공정들을 나타낸 단면도.
제3A도 내지 3G도는 본 발명에 따른 방법으로 LCD의 액티브 매트릭스 기판상에 형성되는 화소 전극용 TFT의 제조 공정을 나타낸 단면도.

Claims (17)

  1. 제1결정성 규소막으로 형성된 제1채널층을 가진 제1박막 트랜지스터 및 제2결정성 규소막으로 형서된 제2채널층을 가진 제2박막 트랜지스터를 포함하는 반도체 장치로서, 상기 제1결정성 규소막 및 제2결정성 규소막은 단일 기판상에 배치되며, 상기 제2결정성 규소막은 결정화를 촉진하는 촉매 원소를 포함하고 상기 제1결정성 규소막의 이동도보다 더 큰 이동도를 가지는 반도체 장치.
  2. 제1항에 있어서, 상기 제2결정성 규소막은 촉매 원소가 도입되어 있는 비정질 규소막의 영역에서 상기 기판의 표면에 대략 평행한 방향으로 결정 성장된 결과로서 얻어진 횡방향 성장 영역으로 형성되는 반도체 장치.
  3. 제1항에 있어서, 상기 촉매 원소는 니켈, 철, 코발트, 팔라듐, 백금, 주석, 인듐, 알룰미늄, 금, 은, 안티몬, 구리, 비소, 및 인으로 구성된 그룹에서 선택된 적어도 하나의 재료로 형성되는 반도체 장치.
  4. 제2항에 있어서, 상기 촉매 원소는 니켈, 철, 코발트, 팔라듐, 백금, 주석, 인듐, 알루미늄, 금, 은, 안티몬, 구리, 비소, 및 인으로 구성된 그룹에서 선택된 적어도 하나의 재료로 형성되는 반도체 장치.
  5. 제1결정성 규소막으로 형성된 제1채널 층을 가진 제1박막 트랜지스터 및 제2결정성 규소막으로 형성된 제2채널층을 가진 제2박막 트랜지스터를 포함하는 반도체 장치를 제조하는 방법으로서; 결정 성장을 위해 도입된 촉매 원소를 포함하는 선택된 영역을 가진 비정질 규소막을 절연 표면을 갖는 기판상에 형성하는 공정; 상기 비정질 규소막의 선택된 영역에 결정핵을 발생시키도록 제1어닐링을 실행하여, 상기 선택된 영역을 결정화시키고, 이어서 상기 선택된 영역에서 횡방향으로 결정 성장을 진해이시켜 상기 제2결정성 규소막을 형성하는 공정; 및 상기 제1어닐링 후에 비정질 상태로 남아있는 상기 비정질 규소막의 나머지 부분을 결정화시키도록 제2어닐링을 실행하여, 제1결정성 규소막을 형성하는 공정으로 이루어지는 반도체 장치 제조 방법.
  6. 제5항에 있어서, 상기 제2어닐링은 제1어닐링보다 더 높은 온도에서 실행되는 반도체 장치 제조 방법.
  7. 제5항에 있어서, 상기 촉매 원소는 니켈, 철, 코발트, 팔라듐, 백금, 주석, 인듐, 알룰미늄, 금, 은, 안티몬, 구리, 비소, 및 인으로 구성된 그룹에서 선택된 적어도 하나의 재료로 형성되는 반도체 장치 제조 방법.
  8. 제6항에 있어서, 상기 촉매 원소는 니켈, 철, 코발트, 팔라듐, 백금, 주석, 인듐, 알루미늄, 금, 은, 안티몬, 구리, 비소, 및 인으로 구성된 그룹에서 선택된 적어도 하나의 재료로 형성되는 반도체 장치 제조 방법.
  9. 액정층, 상기 액정층을 개재시킨 한쌍의 기판들, 상기 한쌍의 기판들 중 하나에 매트릭스 상으로 배열된 복수의 화소 전극들, 및 상기 복수의 화소 전극들에 각각 접속된 복수의 제1박막 트랜지스터들을 포함하는 표시부, 및 상기 제1박막 트랜지스터가 배치된 기판상에 배열되어 제2박막 트랜지스터를 가지며, 상기 표시부를 구동시키도록 배열된 주변 구동 회로를 포함하는 액정 표시 장치로서; 상기 제1박막 트랜지스터들이 각각 제1결정성 규소막으로 형성된 제1채널층을 포함하고, 상기 제2박막 트랜지스터는 상기 제1결정성 규소막의 이동보다 더 높은 이동도를 가진 제2결정성 규소막으로 형성된 제2채널층을 포함하며, 상기 제2결정성 규소막이 결정화를 촉진시키기 위한 촉매 원소를 포함하는 액정 표시 장치.
  10. 제9항에 있어서, 상기 제2결정성 규소막은 상기 촉매 원소가 도입된 비정질 규소막의 선택된 영역에서 상기 기판의 표면에 대략 평행한 방향으로 걸정 성장된 결과로서 얻어진 횡방향 성장 영역으로 형성되는 액정 표시 장치.
  11. 제10항에 있어서, 상기 제2박막 트랜지스터는 캐리어들을 실질적으로 상기 결정 성장 방향으로 이동시키도록 배치되어 있는 액정 표시 장치.
  12. 제9항에 있어서, 상기 제2결정성 규소막은 600℃미만의 온도로 실행된 결정화의 결과로 형성되며, 상기 제1결정성 규소막은 600℃ 이상의 온도로 실행된 결정화의 결과로 형성되는 액정 표시 장치.
  13. 제9항에 있어서, 상기 촉매 원소는 니켈, 철, 코발트, 팔라듐, 백금, 주석, 인듐, 알루미늄, 금, 은, 안티몬, 구리, 비소, 및 인으로 구성된 그룹에서 서너택된 적어도 하나의 재료로 형성되는 액정 표시 장치.
  14. 제10항에 있어서, 상기 촉매 원소는 니켈, 철, 코발트, 팔라듐, 백금, 주석, 인듐, 알루미늄, 금, 은, 안티몬, 구리, 비소, 및 인으로 구성된 그룹에서 서너택된 적어도 하나의 재료로 형성되는 액정 표시 장치.
  15. 제11항에 있어서, 상기 촉매 원소는 니켈, 철, 코발트, 팔라듐, 백금, 주석, 인듐, 알루미늄, 금, 은, 안티몬, 구리, 비소, 및 인으로 구성된 그룹에서 서너택된 적어도 하나의 재료로 형성되는 액정 표시 장치.
  16. 제12항에 있어서, 상기 촉매 원소는 니켈, 철, 코발트, 팔라듐, 백금, 주석, 인듐, 알루미늄, 금, 은, 안티몬, 구리, 비소, 및 인으로 구성된 그룹에서 서너택된 적어도 하나의 재료로 형성되는 액정 표시 장치.
  17. 제10항에 있어서, 상기 촉매 원소는 상기 제2결정성 규소막을 형성하도록 이용되는 상기 비정질 규소막으로 5.0×1013atoms/cm2이하의 농도로 도입되는 액정 표시 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950016315A 1994-06-15 1995-06-15 반도체장치,그의 제조 방법,및 그를 포함하는 액정 표시 장치 KR100254600B1 (ko)

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JP94-132973 1994-06-15
JP13297394A JP3067949B2 (ja) 1994-06-15 1994-06-15 電子装置および液晶表示装置

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KR960001849A true KR960001849A (ko) 1996-01-26
KR100254600B1 KR100254600B1 (ko) 2000-05-01

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KR100541486B1 (ko) * 2001-05-31 2006-01-16 캐논 가부시끼가이샤 결정성 박막 및 그 제조방법, 결정박막을 사용하는 소자, 소자를 사용하는 회로 및 소자 또는 회로를 사용하는 디바이스

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KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
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