CN106952827A - 薄膜晶体管及其制造方法、显示面板 - Google Patents

薄膜晶体管及其制造方法、显示面板 Download PDF

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Publication number
CN106952827A
CN106952827A CN201710156787.4A CN201710156787A CN106952827A CN 106952827 A CN106952827 A CN 106952827A CN 201710156787 A CN201710156787 A CN 201710156787A CN 106952827 A CN106952827 A CN 106952827A
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China
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area
layer
region
substrate
antioxidation coating
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CN201710156787.4A
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石龙强
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201710156787.4A priority Critical patent/CN106952827A/zh
Priority to EP17900358.7A priority patent/EP3598479A4/en
Priority to JP2019549372A priority patent/JP6829775B2/ja
Priority to US15/533,013 priority patent/US10205028B2/en
Priority to PCT/CN2017/079907 priority patent/WO2018166018A1/zh
Priority to KR1020197030018A priority patent/KR102205307B1/ko
Publication of CN106952827A publication Critical patent/CN106952827A/zh
Pending legal-status Critical Current

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    • G02F2202/10—Materials and properties semiconductor

Abstract

本发明公开一种薄膜晶体管及其制造方法、显示面板。在退火处理过程中，铝层与非晶态氧化半导体层中的氧离子结合形成Al2O3层，非晶态氧化半导体层失去氧离子导致氧缺陷增加而形成半导体层的掺杂区域，即形成源极接触区和漏极接触区，同时非晶态氧化半导体层被防氧化层遮挡形成半导体层的沟道区。本发明能够简化制造工艺，提高生产效率，降低生产成本。

Description

薄膜晶体管及其制造方法、显示面板
技术领域
本发明涉及显示技术领域，具体而言涉及一种薄膜晶体管及其制造方法、以及具有该薄膜晶体管的显示面板。
背景技术
随着显示面板尺寸和清晰度的增加，具有较大电子迁移率的薄膜晶体管(ThinFilm Transistor,TFT)结构已崭露头角并表现出巨大的市场应用前景，例如业界普遍采用IGZO(Indium Gallium Zinc Oxide,铟镓锌氧化物)制备薄膜晶体管的半导体层，又称IGZO(Indium Gallium Zinc Oxide)沟道层。为了保证源极和漏极与半导体层的良好接触，既需要形成掺杂区域，又要保证半导体层的沟道区的电学稳定性，这导致制造工艺复杂，从而影响生产效率，使得生产成本居高不下。
发明内容
有鉴于此，本发明提供一种薄膜晶体管及其制造方法、显示面板，能够简化制造工艺，提高生产效率，降低生产成本。
本发明一实施例的薄膜晶体管的制造方法，包括：
在衬底基材上依次形成预定图案的铝层和防氧化层，其中所述衬底基材上划分有沿平行于衬底基材方向依次相邻排布的第一区域、第二区域和第三区域，铝层形成于第一区域、第二区域和第三区域，所述防氧化层形成于第二区域；
在防氧化层上形成覆盖铝层的非晶态氧化半导体层；
对非晶态氧化半导体层进行退火处理，以在退火处理过程中，使得铝层在第一区域和第三区域发生氧化反应形成Al2O3，且非晶态氧化半导体层在第一区域和第三区域发生结晶反应形成源极接触区和漏极接触区、在第二区域被防氧化层遮挡形成沟道区；
在经过退火处理的非晶态氧化半导体层上形成栅极绝缘层；
在栅极绝缘层上形成栅极图案，所述栅极图案位于源极接触区和漏极接触区之间且对应位于沟道区的上方；
在栅极图案上形成介质隔离层；
在介质隔离层上形成源极图案和漏极图案，所述源极图案与源极接触区连接，所述漏极图案与漏极接触区连接。
本发明一实施例的薄膜晶体管包括：
位于衬底基材上且具有预定图案的Al2O3层和铝层，其中所述衬底基材上划分有沿平行于所述衬底基材的方向依次相邻排布的第一区域、第二区域和第三区域，所述Al2O3层形成于第一区域和第三区域，所述铝层形成于第二区域；
防氧化层，位于铝层上，且所述防氧化层在衬底基材上的正投影与第二区域重叠；
半导体层，位于防氧化层上且包括源极接触区、漏极接触区和沟道区，所述源极接触区在衬底基材上的正投影与第一区域重叠，所述漏极接触区在衬底基材上的正投影与第三区域重叠，所述沟道区在衬底基材上的正投影与第二区域重叠；
栅极绝缘层，位于半导体层上；
栅极图案，位于栅极绝缘层上，且所述栅极图案位于源极接触区和漏极接触区之间且对应位于沟道区的上方；
介质隔离层，位于栅极图案上；
源极图案和漏极图案，位于介质隔离层上，且所述源极图案与源极接触区连接，所述漏极图案与漏极接触区连接。
本发明一实施例的显示面板包括上述薄膜晶体管。
通过上述方案，本发明实施例在退火处理时，铝层与非晶态氧化半导体层中的氧离子结合形成Al2O3层，非晶态氧化半导体层失去氧离子导致氧缺陷增加而形成半导体层的掺杂区域，即形成源极接触区和漏极接触区，同时非晶态氧化半导体层被防氧化层遮挡形成半导体层的沟道区，由于退火处理的工艺简单，因此本发明实施例能够简化制造工艺，有利于提高生产效率，降低生产成本。
附图说明
图1是本发明的薄膜晶体管的制造方法一实施例的流程示意图；
图2是基于图1所示方法在衬底基材上依次形成预定图案的铝层和防氧化层的示意图；
图3是基于图1所示方法在图2所示的铝层和防氧化层上形成薄膜晶体管的示意图；
图4是本发明的显示面板一实施例的结构剖面示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明所提供的各个示例性的实施例的技术方案进行清楚、完整地描述。在不冲突的情况下，下述各个实施例以及实施例中的特征可以相互组合。
请参阅图1，为本发明一实施例的薄膜晶体管的制造方法。所述薄膜晶体管的制造方法可以包括以下步骤S11～S17。
S11：在衬底基材上依次形成预定图案的铝层和防氧化层，其中衬底基材上划分有沿平行于衬底基材方向依次相邻排布的第一区域、第二区域和第三区域，铝层形成于第一区域、第二区域和第三区域，所述防氧化层形成于第二区域。
本发明一实施例可以采用曝光结合刻蚀的方式在衬底基材上形成预定图案的铝层和防氧化层。结合图2所示，具体而言：
首先，在衬底基材20上依次形成覆盖衬底基材20的铝层21和防氧化层22。该衬底基材20包括但不限于玻璃基材、塑料基材、可挠式基材等透光基材。本实施例可以采用PVD(Physical Vapor Deposition,物理气相沉积)方法在衬底基材20上依次形成一整面铝层21和一整面防氧化层22，该防氧化层22可以为Mo(钼)层。
继而，在防氧化层22上形成一整面厚度均匀的光阻层23。
然后，采用Half-tone光罩对光阻层23进行曝光，完全曝光部分的光阻可以被显影液去除，未曝光部分的光阻未被显影液去除，而半曝光部分的光阻被部分去除，从而使得曝光后的光阻层23仅在图2所示的第一区域201、第二区域202和第三区域203得以保留。并且，曝光后的光阻层23在第二区域202的厚度大于其在第一区域201的厚度，也大于其在第三区域203的厚度。而曝光后的光阻层23在第一区域201和第二区域202的厚度可以相同。
接着，进行第一次刻蚀制程，以去除未被光阻层23遮盖的铝层21和防氧化层22。所述第一次刻蚀可以采用湿法刻蚀，即，通过腐蚀液淹没光阻层23，未被光阻层23遮盖的铝层21和防氧化层22会与腐蚀液发生化学反应而溶解于腐蚀液中，被光阻层23遮盖的铝层21和防氧化层22由于光阻层23阻挡而不会发生化学反应，得以保留。
进一步，对光阻层23进行灰化处理，以去除位于第一区域201和第三区域203的光阻层23。相比较于曝光后的光阻层23，经过灰化处理后的第二区域202的光阻层23的厚度变小，但被保留。
进行第二次刻蚀制程，以去除位于第一区域201和第三区域203的防氧化层22。所述第二次刻蚀制程可以采用干法刻蚀，例如，采用等离子气体轰击第一区域201和第三区域203以去除这两个区域的防氧化层22，然后停止刻蚀。经过第二次刻蚀制程后，位于第一区域201和第三区域203的铝层21未发生变化。
最后，去除位于第二区域202的光阻层23。至此，本实施例得到预定图案的铝层21和防氧化层22，即，沿平行于衬底基材20的方向上，铝层21形成于第一区域201、第二区域202和第三区域203，防氧化层22在衬底基材20上的正投影与第二区域202重叠。
当然，在衬底基材20上依次形成一整面铝层21和一整面防氧化层22之后，本发明另一实施例可以仅在防氧化层22的第二区域202上形成光阻层23，即光阻层23在衬底基材20上的正投影与第二区域202重叠，而后对未被光阻层23遮盖的防氧化层22进行干法刻蚀，以去除未被所述光阻层23遮盖的防氧化层22，最后去除光阻层23，从而得到预定图案的铝层21和防氧化层22。
又或者，本发明其他实施例可以采用PVD方法直接在衬底基材20上依次形成预定图案的铝层21和防氧化层22。
S12：在防氧化层上形成覆盖铝层的非晶态氧化半导体层。
结合图2和图3所示，本实施例可以采用PVD方法形成覆盖衬底基材20的一整面非晶态氧化半导体层24。该非晶态氧化半导体层的材质包括但不限于IGZO。而后，本实施例可以通过涂布光阻、曝光、刻蚀的方式仅保留位于第一区域201、第二区域202和第三区域203的非晶态氧化半导体层24。
S13：对非晶态氧化半导体层进行退火处理，以在所述退火处理过程中，使得铝层在第一区域和第三区域发生氧化反应形成Al2O3，且非晶态氧化半导体层在第一区域和第三区域发生结晶反应形成源极接触区和漏极接触区、在第二区域被防氧化层遮挡形成沟道区。
在退火处理过程中，铝层21与非晶态氧化半导体层24中的氧离子结合形成Al2O3层，非晶态氧化半导体层24失去氧离子导致氧缺陷增加，从而在非晶态氧化半导体层24两端(即位于第一区域201和第三区域203部分)的掺杂区域结晶形成掺杂半导体层25，例如N+IGZO层，该结晶方向为从第一区域201和第三区域203朝向第二区域202。这种定向结晶能够确保结晶效率和结晶均一性，减少晶界对电子迁移率和漏电流的影响，确保半导体层25的电学特性。
在退火处理后，非晶态氧化半导体层24两端分别形成源极接触区和漏极接触区，而被防氧化层22遮挡的中间部分(即位于第二区域202部分)形成沟道区。并且，结晶完成后，沟道区中的掺杂离子较少，电子迁移率较低，从而能够减少TFT的漏电流，而源极接触区和漏极接触区中的掺杂离子较多，电子迁移率较高，能够降低与后续形成的TFT的源极和漏极的接触阻抗。
由此可见，本实施例通过退火工艺即可制得电学特性良好的半导体层25，而由于退火处理的工艺简单，因此本实施例能够简化制造工艺，有利于提高生产效率，降低生产成本。
其中，防氧化层22用于隔绝非晶态氧化半导体层24和铝层21，防止在退火处理过程中铝层21与第二区域202的非晶态氧化半导体层24中的氧离子结合形成Al2O3层，基于此，本实施例的防氧化层22需要采用不易氧化的材料，例如可以为钼、钛等。
S14：在经过退火处理的非晶态氧化半导体层上形成栅极绝缘层。
本实施例可以采用CVD(Chemical Vapor Deposition,化学气相沉积)方法在半导体层25上形成栅极绝缘层(Gate Insulation Layer，GI)26，该栅极绝缘层26为覆盖衬底基板20的一整面结构。其中，所述栅极绝缘层26的材质可以为硅氧化物(SiOx)，当然，栅极绝缘层26也可以包括依次形成于半导体层25上的硅氧化合物层和硅氮化合物，例如SiO2(二氧化硅)和Si3N4(三氮化硅)，从而能够进一步提高栅极绝缘层26的耐磨损能力和绝缘性能。
S15：在栅极绝缘层上形成栅极图案，所述栅极图案位于源极接触区和漏极接触区之间且对应位于沟道区的上方。
本实施例可以采用涂布光阻、曝光、显影、刻蚀的图案化处理工艺形成具有预定图案的栅极图案271。鉴于栅极图案271位于半导体层25的上方，本实施例的TFT可视为具有顶栅型设计，因此在曝光过程中，本实施例可以采用背面照光的黄光制程在栅极绝缘层26上形成栅极图案271，所述黄光制程以经过退火处理的铝层(即第二区域202的铝层21)为遮光层，并从所述遮光层背向防氧化层22的一侧进行光照，省略了传统的使用光罩作为遮光层，因此可进一步简化制造工艺。
S16：在栅极图案上形成介质隔离层。
本实施例可以采用CVD方法在栅极图案271上形成介质隔离层28。该介质隔离层(Interlayer Dielectric Layer,IDL，又称介电层或层间介电层)28覆盖栅极绝缘层26的一整面结构。
S17：在介质隔离层上形成源极图案和漏极图案，所述源极图案与源极接触区连接，所述漏极图案与漏极接触区连接。
请继续参阅图3，本实施例可以通过涂布光阻、曝光、显影、刻蚀的方式形成接触孔291、292。所述接触孔291、292均贯穿栅极绝缘层26和介质隔离层28，并暴露半导体层25的源极接触区和漏极接触区的上表面。而后本实施例可以采用PVD方法以及图案化处理工艺在介质隔离层28上形成源极图案272和漏极图案273，源极图案272通过接触孔291与半导体层25的源极接触区连接，漏极图案273通过接触孔292与半导体层25的漏极接触区连接。
通过上述方式，本发明即可制得所需要的薄膜晶体管。
本发明还提供一实施例的显示面板，如图4所示，该液晶显示面板40可以包括第一基板41和第二基板42，上述薄膜晶体管可形成于第一基板41或第二基板42上。因此，该显示面板40也具有上述有益效果。其中，该显示面板40可以为液晶显示面板，也可以为AMOLED(Active-matrix organic light emitting diode,有源矩阵有机发光二极体或主动矩阵有机发光二极体)等类型的显示面板。
应理解，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种薄膜晶体管的制造方法，其特征在于，所述方法包括：
在衬底基材上依次形成预定图案的铝层和防氧化层，其中所述衬底基材上划分有沿平行于衬底基材方向依次相邻排布的第一区域、第二区域和第三区域，所述铝层形成于所述第一区域、第二区域和第三区域，所述防氧化层形成于所述第二区域；
在所述防氧化层上形成覆盖所述铝层的非晶态氧化半导体层；
对所述非晶态氧化半导体层进行退火处理，以在所述退火处理过程中，使得铝层在所述第一区域和第三区域发生氧化反应形成Al2O3(三氧化二铝)，且非晶态氧化半导体层在所述第一区域和第三区域发生结晶反应形成源极接触区和漏极接触区、在所述第二区域被防氧化层遮挡形成沟道区；
在经过退火处理的非晶态氧化半导体层上形成栅极绝缘层；
在所述栅极绝缘层上形成栅极图案，所述栅极图案位于所述源极接触区和所述漏极接触区之间且对应位于所述沟道区的上方；
在所述栅极图案上形成介质隔离层；
在所述介质隔离层上形成源极图案和漏极图案，所述源极图案与所述源极接触区连接，所述漏极图案与所述漏极接触区连接。
2.根据权利要求1所述的方法，其特征在于，在衬底基材上依次形成预定图案的铝层和防氧化层，包括：
在衬底基材上依次形成覆盖所述衬底基材的铝层和防氧化层；
在所述防氧化层上形成光阻层；
采用Half-tone(半色调)光罩对所述光阻层进行曝光，使得曝光后的光阻层形成于所述第一区域、第二区域和第三区域，且所述光阻层在第二区域的厚度大于其在所述第一区域和第三区域中任一者的厚度；
进行第一次刻蚀制程，以去除未被所述曝光后的光阻层遮盖的铝层和防氧化层；
对所述曝光后的光阻层进行灰化处理，以去除位于所述第一区域和第三区域的光阻层，并保留第二区域的光阻层；
进行第二次刻蚀制程，以去除未被第二区域的光阻层遮挡的且位于所述第一区域和第三区域的防氧化层；
去除位于所述第二区域的光阻层。
3.根据权利要求2所述的方法，其特征在于，所述第一次刻蚀制程采用湿法刻蚀，所述第二次刻蚀制程采用干法刻蚀。
4.根据权利要求1所述的方法，其特征在于，在衬底基材上依次形成预定图案的铝层和防氧化层，包括：
在衬底基材上依次形成覆盖所述衬底基材的铝层和防氧化层；
在所述防氧化层上形成光阻层，所述光阻层在所述衬底基材上的正投影与所述第二区域重叠；
对未被所述光阻层遮盖的防氧化层进行刻蚀，以去除未被所述光阻层遮盖的防氧化层；
去除所述光阻层。
5.根据权利要求4所述的方法，其特征在于，采用干法刻蚀对未被所述光阻层遮盖的防氧化层进行刻蚀。
6.根据权利要求1所述的方法，其特征在于，所述防氧化层包括钼层。
7.根据权利要求1所述的方法，其特征在于，采用背面照光的黄光制程在栅极绝缘层上形成栅极图案，所述黄光制程以所述第二区域的铝层为遮光层，并从所述遮光层背向防氧化层的一侧进行光照。
8.一种薄膜晶体管，其特征在于，所述薄膜晶体管包括：
形成于衬底基材上且具有预定图案的Al2O3(三氧化二铝)层和铝层，其中所述衬底基材上划分有沿平行于所述衬底基材的方向依次相邻排布的第一区域、第二区域和第三区域，所述Al2O3层形成于第一区域和第三区域，所述铝层形成于第二区域；
防氧化层，位于所述铝层上，且所述防氧化层在所述衬底基材上的正投影与所述第二区域重叠；
半导体层，位于所述防氧化层上且包括源极接触区、漏极接触区和沟道区，所述源极接触区在衬底基材上的正投影与所述第一区域重叠，所述漏极接触区在衬底基材上的正投影与所述第三区域重叠，所述沟道区在衬底基材上的正投影与所述第二区域重叠；
栅极绝缘层，位于所述半导体层上；
栅极图案，位于所述栅极绝缘层上，且所述栅极图案位于所述源极接触区和所述漏极接触区之间且对应位于所述沟道区的上方；
介质隔离层，位于所述栅极图案上；
源极图案和漏极图案，位于所述介质隔离层上，且所述源极图案与所述源极接触区连接，所述漏极图案与所述漏极接触区连接。
9.根据权利要求8所述的薄膜晶体管，其特征在于，所述防氧化层包括钼层。
10.一种显示面板，其特征在于，所述显示面板包括权利要求8-9任意一项所述的薄膜晶体管。
CN201710156787.4A 2017-03-16 2017-03-16 薄膜晶体管及其制造方法、显示面板 Pending CN106952827A (zh)

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