KR910000757B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR910000757B1
KR910000757B1 KR1019870014022A KR870014022A KR910000757B1 KR 910000757 B1 KR910000757 B1 KR 910000757B1 KR 1019870014022 A KR1019870014022 A KR 1019870014022A KR 870014022 A KR870014022 A KR 870014022A KR 910000757 B1 KR910000757 B1 KR 910000757B1
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KR
South Korea
Prior art keywords
metal layer
alloy
semiconductor device
aluminum
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870014022A
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English (en)
Korean (ko)
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KR880008444A (ko
Inventor
오사무 우수다
Original Assignee
가부시기가이샤 도시바
아오이 죠이찌
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Publication of KR880008444A publication Critical patent/KR880008444A/ko
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Publication of KR910000757B1 publication Critical patent/KR910000757B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H10W20/4435—Noble-metal alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Wire Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019870014022A 1986-12-12 1987-12-09 반도체 장치 Expired KR910000757B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61-294902 1986-12-12
JP61294902A JPS63148646A (ja) 1986-12-12 1986-12-12 半導体装置

Publications (2)

Publication Number Publication Date
KR880008444A KR880008444A (ko) 1988-08-31
KR910000757B1 true KR910000757B1 (ko) 1991-02-06

Family

ID=17813730

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870014022A Expired KR910000757B1 (ko) 1986-12-12 1987-12-09 반도체 장치

Country Status (6)

Country Link
US (1) US5060051A (enExample)
EP (1) EP0271110B1 (enExample)
JP (1) JPS63148646A (enExample)
KR (1) KR910000757B1 (enExample)
CN (1) CN1020029C (enExample)
DE (1) DE3787709T2 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734449B2 (ja) * 1987-11-30 1995-04-12 三菱電機株式会社 半導体装置の電極接合部構造
US5293073A (en) * 1989-06-27 1994-03-08 Kabushiki Kaisha Toshiba Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
JPH0682704B2 (ja) * 1989-06-27 1994-10-19 株式会社東芝 半導体装置
NL8902695A (nl) * 1989-11-01 1991-06-03 Philips Nv Interconnectiestructuur.
JPH03208355A (ja) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5734226A (en) * 1992-08-12 1998-03-31 Micron Technology, Inc. Wire-bonded getters useful in evacuated displays
US5567981A (en) * 1993-03-31 1996-10-22 Intel Corporation Bonding pad structure having an interposed rigid layer
KR970011650B1 (en) * 1994-01-10 1997-07-12 Samsung Electronics Co Ltd Fabrication method of good die of solder bump
US5483105A (en) * 1994-04-25 1996-01-09 International Business Machines Corporation Module input-output pad having stepped set-back
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US5865658A (en) * 1995-09-28 1999-02-02 Micron Display Technology, Inc. Method for efficient positioning of a getter
US6140702A (en) * 1996-05-31 2000-10-31 Texas Instruments Incorporated Plastic encapsulation for integrated circuits having plated copper top surface level interconnect
JP3504448B2 (ja) * 1996-10-17 2004-03-08 株式会社ルネサステクノロジ 半導体装置
US5931713A (en) * 1997-03-19 1999-08-03 Micron Technology, Inc. Display device with grille having getter material
TW373197B (en) * 1997-05-14 1999-11-01 Murata Manufacturing Co Electronic device having electric wires and the manufacturing method thereof
US6140150A (en) * 1997-05-28 2000-10-31 Texas Instruments Incorporated Plastic encapsulation for integrated circuits having plated copper top surface level interconnect
DE69832010T2 (de) * 1997-07-24 2006-07-13 Mitsubishi Denki K.K. Prüfspitze für Halbleiterschaltungen und Verfahren zu ihrer Herstellung
JP3121311B2 (ja) 1998-05-26 2000-12-25 日本電気株式会社 多層配線構造及びそれを有する半導体装置並びにそれらの製造方法
JP2002076051A (ja) * 2000-09-01 2002-03-15 Nec Corp 半導体装置のボンディングパッド構造及びボンディング方法
JP4979154B2 (ja) * 2000-06-07 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置
JP5019666B2 (ja) * 2000-06-22 2012-09-05 ローム株式会社 半導体装置の製造方法
US6715663B2 (en) * 2002-01-16 2004-04-06 Intel Corporation Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method
WO2004105132A1 (en) * 2003-05-20 2004-12-02 Axalto Sa An electrical connection for a microelectronic chip, and a method for manufacturing such a connection
DE102004047522B3 (de) * 2004-09-28 2006-04-06 Infineon Technologies Ag Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben
US20090079082A1 (en) * 2007-09-24 2009-03-26 Yong Liu Bonding pad structure allowing wire bonding over an active area in a semiconductor die and method of manufacturing same
TWI372453B (en) * 2008-09-01 2012-09-11 Advanced Semiconductor Eng Copper bonding wire, wire bonding structure and method for processing and bonding a wire
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
TW201030916A (en) * 2009-02-11 2010-08-16 Advanced Semiconductor Eng Pad and package structure using the same
JP2010258286A (ja) * 2009-04-27 2010-11-11 Sanyo Electric Co Ltd 半導体装置及びその製造方法
TWI412114B (zh) 2009-12-31 2013-10-11 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
JPWO2012005073A1 (ja) * 2010-07-08 2013-09-02 三菱電機株式会社 半導体装置、半導体パッケージ及びそれらの製造方法
TWI490927B (zh) * 2011-03-10 2015-07-01 同和電子科技股份有限公司 Semiconductor light emitting element and manufacturing method thereof
JP5946286B2 (ja) * 2012-02-17 2016-07-06 新日本無線株式会社 パワー半導体装置及びその製造方法
US8618677B2 (en) 2012-04-06 2013-12-31 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
WO2013190638A1 (ja) * 2012-06-19 2013-12-27 パイオニア株式会社 導体の接続構造、電子機器
DE112014002135T5 (de) * 2013-04-25 2016-01-14 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
CN110246772A (zh) * 2013-05-10 2019-09-17 富士电机株式会社 半导体装置及半导体装置的制造方法
US9343422B2 (en) * 2014-03-31 2016-05-17 Freescale Semiconductor, Inc. Structure for aluminum pad metal under ball bond
JP2015204333A (ja) * 2014-04-11 2015-11-16 豊田合成株式会社 半導体装置および半導体装置の製造方法
DE102014109183A1 (de) 2014-07-01 2016-01-21 Infineon Technologies Ag Verfahren zur Herstellung eines Schaltungsträgers und zum Verbinden eines elektrischen Leiters mit einer Metallisierungsschicht eines Schaltungsträgers
TWI569396B (zh) * 2014-12-08 2017-02-01 財團法人工業技術研究院 具有焊線的晶片結構
JP6929254B2 (ja) * 2018-08-23 2021-09-01 三菱電機株式会社 電力用半導体装置
CN111106084B (zh) * 2018-10-25 2021-08-10 株洲中车时代半导体有限公司 用于引线键合的衬底金属层结构及功率半导体器件
EP3671861A1 (en) * 2018-12-17 2020-06-24 Nexperia B.V. Semiconductor device and electrical contact

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FR2170846B1 (enExample) * 1972-02-03 1975-10-24 Garyainov Stanislav
US4176443A (en) * 1977-03-08 1979-12-04 Sgs-Ates Componenti Elettronici S.P.A. Method of connecting semiconductor structure to external circuits
JPS54128280A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Resin-sealed semiconductor device
JPS58103168A (ja) * 1981-12-16 1983-06-20 Fujitsu Ltd 半導体装置
JPS59121871A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 半導体装置
US4720908A (en) * 1984-07-11 1988-01-26 Texas Instruments Incorporated Process for making contacts and interconnects for holes having vertical sidewalls
JPS62136838A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JPH0482183B2 (enExample) 1992-12-25
DE3787709D1 (de) 1993-11-11
EP0271110B1 (en) 1993-10-06
EP0271110A2 (en) 1988-06-15
US5060051A (en) 1991-10-22
CN1020029C (zh) 1993-03-03
EP0271110A3 (en) 1989-02-22
JPS63148646A (ja) 1988-06-21
DE3787709T2 (de) 1994-04-21
CN87107402A (zh) 1988-06-22
KR880008444A (ko) 1988-08-31

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