DE3787709D1 - Halbleiteranordnung mit einem Elektrodenfleck. - Google Patents
Halbleiteranordnung mit einem Elektrodenfleck.Info
- Publication number
- DE3787709D1 DE3787709D1 DE87118354T DE3787709T DE3787709D1 DE 3787709 D1 DE3787709 D1 DE 3787709D1 DE 87118354 T DE87118354 T DE 87118354T DE 3787709 T DE3787709 T DE 3787709T DE 3787709 D1 DE3787709 D1 DE 3787709D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor arrangement
- electrode spot
- spot
- electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP61294902A JPS63148646A (ja) | 1986-12-12 | 1986-12-12 | 半導体装置 |
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DE3787709D1 true DE3787709D1 (de) | 1993-11-11 |
DE3787709T2 DE3787709T2 (de) | 1994-04-21 |
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DE87118354T Expired - Fee Related DE3787709T2 (de) | 1986-12-12 | 1987-12-10 | Halbleiteranordnung mit einem Elektrodenfleck. |
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US (1) | US5060051A (de) |
EP (1) | EP0271110B1 (de) |
JP (1) | JPS63148646A (de) |
KR (1) | KR910000757B1 (de) |
CN (1) | CN1020029C (de) |
DE (1) | DE3787709T2 (de) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0734449B2 (ja) * | 1987-11-30 | 1995-04-12 | 三菱電機株式会社 | 半導体装置の電極接合部構造 |
US5293073A (en) * | 1989-06-27 | 1994-03-08 | Kabushiki Kaisha Toshiba | Electrode structure of a semiconductor device which uses a copper wire as a bonding wire |
JPH0682704B2 (ja) * | 1989-06-27 | 1994-10-19 | 株式会社東芝 | 半導体装置 |
NL8902695A (nl) * | 1989-11-01 | 1991-06-03 | Philips Nv | Interconnectiestructuur. |
JPH03208355A (ja) * | 1990-01-10 | 1991-09-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5734226A (en) * | 1992-08-12 | 1998-03-31 | Micron Technology, Inc. | Wire-bonded getters useful in evacuated displays |
US5567981A (en) * | 1993-03-31 | 1996-10-22 | Intel Corporation | Bonding pad structure having an interposed rigid layer |
KR970011650B1 (en) * | 1994-01-10 | 1997-07-12 | Samsung Electronics Co Ltd | Fabrication method of good die of solder bump |
US5483105A (en) * | 1994-04-25 | 1996-01-09 | International Business Machines Corporation | Module input-output pad having stepped set-back |
US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
US5865658A (en) * | 1995-09-28 | 1999-02-02 | Micron Display Technology, Inc. | Method for efficient positioning of a getter |
US6140702A (en) * | 1996-05-31 | 2000-10-31 | Texas Instruments Incorporated | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect |
JP3504448B2 (ja) * | 1996-10-17 | 2004-03-08 | 株式会社ルネサステクノロジ | 半導体装置 |
US5931713A (en) * | 1997-03-19 | 1999-08-03 | Micron Technology, Inc. | Display device with grille having getter material |
TW373197B (en) * | 1997-05-14 | 1999-11-01 | Murata Manufacturing Co | Electronic device having electric wires and the manufacturing method thereof |
US6140150A (en) * | 1997-05-28 | 2000-10-31 | Texas Instruments Incorporated | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect |
DE69832110T2 (de) * | 1997-07-24 | 2006-07-20 | Mitsubishi Denki K.K. | Herstellungsverfahren für eine Prüfnadel für Halbleitergeräte |
JP3121311B2 (ja) | 1998-05-26 | 2000-12-25 | 日本電気株式会社 | 多層配線構造及びそれを有する半導体装置並びにそれらの製造方法 |
JP2002076051A (ja) * | 2000-09-01 | 2002-03-15 | Nec Corp | 半導体装置のボンディングパッド構造及びボンディング方法 |
JP4979154B2 (ja) * | 2000-06-07 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5019666B2 (ja) * | 2000-06-22 | 2012-09-05 | ローム株式会社 | 半導体装置の製造方法 |
US6715663B2 (en) * | 2002-01-16 | 2004-04-06 | Intel Corporation | Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method |
WO2004105132A1 (en) * | 2003-05-20 | 2004-12-02 | Axalto Sa | An electrical connection for a microelectronic chip, and a method for manufacturing such a connection |
DE102004047522B3 (de) * | 2004-09-28 | 2006-04-06 | Infineon Technologies Ag | Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben |
US20090079082A1 (en) * | 2007-09-24 | 2009-03-26 | Yong Liu | Bonding pad structure allowing wire bonding over an active area in a semiconductor die and method of manufacturing same |
TWI372453B (en) * | 2008-09-01 | 2012-09-11 | Advanced Semiconductor Eng | Copper bonding wire, wire bonding structure and method for processing and bonding a wire |
US8357998B2 (en) * | 2009-02-09 | 2013-01-22 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
TW201030916A (en) * | 2009-02-11 | 2010-08-16 | Advanced Semiconductor Eng | Pad and package structure using the same |
JP2010258286A (ja) * | 2009-04-27 | 2010-11-11 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
TWI412114B (zh) * | 2009-12-31 | 2013-10-11 | Advanced Semiconductor Eng | 半導體封裝結構及其製造方法 |
JPWO2012005073A1 (ja) * | 2010-07-08 | 2013-09-02 | 三菱電機株式会社 | 半導体装置、半導体パッケージ及びそれらの製造方法 |
EP2685511B1 (de) * | 2011-03-10 | 2017-04-26 | DOWA Electronics Materials Co., Ltd. | Lichtemittierendes halbleiterelement und herstellungsverfahren dafür |
JP5946286B2 (ja) * | 2012-02-17 | 2016-07-06 | 新日本無線株式会社 | パワー半導体装置及びその製造方法 |
US8618677B2 (en) | 2012-04-06 | 2013-12-31 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
WO2013190638A1 (ja) * | 2012-06-19 | 2013-12-27 | パイオニア株式会社 | 導体の接続構造、電子機器 |
JP6132014B2 (ja) * | 2013-04-25 | 2017-05-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN105027272A (zh) * | 2013-05-10 | 2015-11-04 | 富士电机株式会社 | 半导体装置 |
US9343422B2 (en) * | 2014-03-31 | 2016-05-17 | Freescale Semiconductor, Inc. | Structure for aluminum pad metal under ball bond |
JP2015204333A (ja) * | 2014-04-11 | 2015-11-16 | 豊田合成株式会社 | 半導体装置および半導体装置の製造方法 |
DE102014109183A1 (de) * | 2014-07-01 | 2016-01-21 | Infineon Technologies Ag | Verfahren zur Herstellung eines Schaltungsträgers und zum Verbinden eines elektrischen Leiters mit einer Metallisierungsschicht eines Schaltungsträgers |
TWI569396B (zh) * | 2014-12-08 | 2017-02-01 | 財團法人工業技術研究院 | 具有焊線的晶片結構 |
JP6929254B2 (ja) * | 2018-08-23 | 2021-09-01 | 三菱電機株式会社 | 電力用半導体装置 |
CN111106084B (zh) * | 2018-10-25 | 2021-08-10 | 株洲中车时代半导体有限公司 | 用于引线键合的衬底金属层结构及功率半导体器件 |
EP3671861A1 (de) * | 2018-12-17 | 2020-06-24 | Nexperia B.V. | Halbleiterbauelement und elektrischer kontakt |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2170846B1 (de) * | 1972-02-03 | 1975-10-24 | Garyainov Stanislav | |
US4176443A (en) * | 1977-03-08 | 1979-12-04 | Sgs-Ates Componenti Elettronici S.P.A. | Method of connecting semiconductor structure to external circuits |
JPS54128280A (en) * | 1978-03-29 | 1979-10-04 | Hitachi Ltd | Resin-sealed semiconductor device |
JPS58103168A (ja) * | 1981-12-16 | 1983-06-20 | Fujitsu Ltd | 半導体装置 |
JPS59121871A (ja) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | 半導体装置 |
US4720908A (en) * | 1984-07-11 | 1988-01-26 | Texas Instruments Incorporated | Process for making contacts and interconnects for holes having vertical sidewalls |
JPS62136838A (ja) * | 1985-12-10 | 1987-06-19 | Mitsubishi Electric Corp | 半導体装置 |
-
1986
- 1986-12-12 JP JP61294902A patent/JPS63148646A/ja active Granted
-
1987
- 1987-12-09 KR KR1019870014022A patent/KR910000757B1/ko not_active IP Right Cessation
- 1987-12-10 DE DE87118354T patent/DE3787709T2/de not_active Expired - Fee Related
- 1987-12-10 EP EP87118354A patent/EP0271110B1/de not_active Expired - Lifetime
- 1987-12-12 CN CN87107402A patent/CN1020029C/zh not_active Expired - Lifetime
-
1991
- 1991-01-25 US US07/645,707 patent/US5060051A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5060051A (en) | 1991-10-22 |
JPS63148646A (ja) | 1988-06-21 |
EP0271110A3 (en) | 1989-02-22 |
EP0271110B1 (de) | 1993-10-06 |
CN1020029C (zh) | 1993-03-03 |
EP0271110A2 (de) | 1988-06-15 |
CN87107402A (zh) | 1988-06-22 |
JPH0482183B2 (de) | 1992-12-25 |
KR910000757B1 (ko) | 1991-02-06 |
DE3787709T2 (de) | 1994-04-21 |
KR880008444A (ko) | 1988-08-31 |
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