CN1020029C - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1020029C
CN1020029C CN87107402A CN87107402A CN1020029C CN 1020029 C CN1020029 C CN 1020029C CN 87107402 A CN87107402 A CN 87107402A CN 87107402 A CN87107402 A CN 87107402A CN 1020029 C CN1020029 C CN 1020029C
Authority
CN
China
Prior art keywords
metal level
semiconductor device
semiconductor element
metal layer
pressure welding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN87107402A
Other languages
English (en)
Chinese (zh)
Other versions
CN87107402A (zh
Inventor
薄田修
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN87107402A publication Critical patent/CN87107402A/zh
Application granted granted Critical
Publication of CN1020029C publication Critical patent/CN1020029C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H10W20/425—
    • H10W72/00—
    • H10W20/4432—
    • H10W20/4435—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/07553—
    • H10W72/531—
    • H10W72/536—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/5525—
    • H10W72/59—
    • H10W72/923—
    • H10W72/934—
    • H10W72/952—

Landscapes

  • Wire Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN87107402A 1986-12-12 1987-12-12 半导体器件 Expired - Lifetime CN1020029C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP294902/86 1986-12-12
JP61294902A JPS63148646A (ja) 1986-12-12 1986-12-12 半導体装置

Publications (2)

Publication Number Publication Date
CN87107402A CN87107402A (zh) 1988-06-22
CN1020029C true CN1020029C (zh) 1993-03-03

Family

ID=17813730

Family Applications (1)

Application Number Title Priority Date Filing Date
CN87107402A Expired - Lifetime CN1020029C (zh) 1986-12-12 1987-12-12 半导体器件

Country Status (6)

Country Link
US (1) US5060051A (enExample)
EP (1) EP0271110B1 (enExample)
JP (1) JPS63148646A (enExample)
KR (1) KR910000757B1 (enExample)
CN (1) CN1020029C (enExample)
DE (1) DE3787709T2 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734449B2 (ja) * 1987-11-30 1995-04-12 三菱電機株式会社 半導体装置の電極接合部構造
JPH0682704B2 (ja) * 1989-06-27 1994-10-19 株式会社東芝 半導体装置
US5293073A (en) * 1989-06-27 1994-03-08 Kabushiki Kaisha Toshiba Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
NL8902695A (nl) * 1989-11-01 1991-06-03 Philips Nv Interconnectiestructuur.
JPH03208355A (ja) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5734226A (en) * 1992-08-12 1998-03-31 Micron Technology, Inc. Wire-bonded getters useful in evacuated displays
US5567981A (en) * 1993-03-31 1996-10-22 Intel Corporation Bonding pad structure having an interposed rigid layer
KR970011650B1 (en) * 1994-01-10 1997-07-12 Samsung Electronics Co Ltd Fabrication method of good die of solder bump
US5483105A (en) * 1994-04-25 1996-01-09 International Business Machines Corporation Module input-output pad having stepped set-back
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US5865658A (en) * 1995-09-28 1999-02-02 Micron Display Technology, Inc. Method for efficient positioning of a getter
US6140702A (en) * 1996-05-31 2000-10-31 Texas Instruments Incorporated Plastic encapsulation for integrated circuits having plated copper top surface level interconnect
JP3504448B2 (ja) * 1996-10-17 2004-03-08 株式会社ルネサステクノロジ 半導体装置
US5931713A (en) * 1997-03-19 1999-08-03 Micron Technology, Inc. Display device with grille having getter material
TW373197B (en) * 1997-05-14 1999-11-01 Murata Manufacturing Co Electronic device having electric wires and the manufacturing method thereof
US6140150A (en) * 1997-05-28 2000-10-31 Texas Instruments Incorporated Plastic encapsulation for integrated circuits having plated copper top surface level interconnect
EP1621893B1 (en) * 1997-07-24 2007-04-25 Mitsubishi Denki Kabushiki Kaisha Device for removing foreign matter adhering to a probe tip face
JP3121311B2 (ja) * 1998-05-26 2000-12-25 日本電気株式会社 多層配線構造及びそれを有する半導体装置並びにそれらの製造方法
JP2002076051A (ja) * 2000-09-01 2002-03-15 Nec Corp 半導体装置のボンディングパッド構造及びボンディング方法
JP4979154B2 (ja) * 2000-06-07 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置
JP5019666B2 (ja) * 2000-06-22 2012-09-05 ローム株式会社 半導体装置の製造方法
US6715663B2 (en) * 2002-01-16 2004-04-06 Intel Corporation Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method
WO2004105132A1 (en) * 2003-05-20 2004-12-02 Axalto Sa An electrical connection for a microelectronic chip, and a method for manufacturing such a connection
DE102004047522B3 (de) * 2004-09-28 2006-04-06 Infineon Technologies Ag Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben
US20090079082A1 (en) * 2007-09-24 2009-03-26 Yong Liu Bonding pad structure allowing wire bonding over an active area in a semiconductor die and method of manufacturing same
TWI372453B (en) * 2008-09-01 2012-09-11 Advanced Semiconductor Eng Copper bonding wire, wire bonding structure and method for processing and bonding a wire
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
TW201030916A (en) * 2009-02-11 2010-08-16 Advanced Semiconductor Eng Pad and package structure using the same
JP2010258286A (ja) * 2009-04-27 2010-11-11 Sanyo Electric Co Ltd 半導体装置及びその製造方法
TWI412114B (zh) * 2009-12-31 2013-10-11 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
JPWO2012005073A1 (ja) * 2010-07-08 2013-09-02 三菱電機株式会社 半導体装置、半導体パッケージ及びそれらの製造方法
EP2685511B1 (en) * 2011-03-10 2017-04-26 DOWA Electronics Materials Co., Ltd. Semiconductor light-emitting element and method of manufacturing thereof
JP5946286B2 (ja) * 2012-02-17 2016-07-06 新日本無線株式会社 パワー半導体装置及びその製造方法
US8618677B2 (en) 2012-04-06 2013-12-31 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
WO2013190638A1 (ja) * 2012-06-19 2013-12-27 パイオニア株式会社 導体の接続構造、電子機器
CN105190858B (zh) * 2013-04-25 2018-11-06 富士电机株式会社 半导体装置及半导体装置的制造方法
JP6056968B2 (ja) * 2013-05-10 2017-01-11 富士電機株式会社 半導体装置
US9343422B2 (en) * 2014-03-31 2016-05-17 Freescale Semiconductor, Inc. Structure for aluminum pad metal under ball bond
JP2015204333A (ja) * 2014-04-11 2015-11-16 豊田合成株式会社 半導体装置および半導体装置の製造方法
DE102014109183A1 (de) 2014-07-01 2016-01-21 Infineon Technologies Ag Verfahren zur Herstellung eines Schaltungsträgers und zum Verbinden eines elektrischen Leiters mit einer Metallisierungsschicht eines Schaltungsträgers
TWI569396B (zh) * 2014-12-08 2017-02-01 財團法人工業技術研究院 具有焊線的晶片結構
JP6929254B2 (ja) * 2018-08-23 2021-09-01 三菱電機株式会社 電力用半導体装置
CN111106084B (zh) * 2018-10-25 2021-08-10 株洲中车时代半导体有限公司 用于引线键合的衬底金属层结构及功率半导体器件
EP3671861A1 (en) * 2018-12-17 2020-06-24 Nexperia B.V. Semiconductor device and electrical contact

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2170846B1 (enExample) * 1972-02-03 1975-10-24 Garyainov Stanislav
US4176443A (en) * 1977-03-08 1979-12-04 Sgs-Ates Componenti Elettronici S.P.A. Method of connecting semiconductor structure to external circuits
JPS54128280A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Resin-sealed semiconductor device
JPS58103168A (ja) * 1981-12-16 1983-06-20 Fujitsu Ltd 半導体装置
JPS59121871A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 半導体装置
US4720908A (en) * 1984-07-11 1988-01-26 Texas Instruments Incorporated Process for making contacts and interconnects for holes having vertical sidewalls
JPS62136838A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
EP0271110A2 (en) 1988-06-15
JPS63148646A (ja) 1988-06-21
JPH0482183B2 (enExample) 1992-12-25
EP0271110A3 (en) 1989-02-22
EP0271110B1 (en) 1993-10-06
KR910000757B1 (ko) 1991-02-06
KR880008444A (ko) 1988-08-31
DE3787709T2 (de) 1994-04-21
DE3787709D1 (de) 1993-11-11
CN87107402A (zh) 1988-06-22
US5060051A (en) 1991-10-22

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
OR01 Other related matters
C17 Cessation of patent right
CX01 Expiry of patent term