JPS6256597A - 電子部品のメツキ方法 - Google Patents

電子部品のメツキ方法

Info

Publication number
JPS6256597A
JPS6256597A JP60195856A JP19585685A JPS6256597A JP S6256597 A JPS6256597 A JP S6256597A JP 60195856 A JP60195856 A JP 60195856A JP 19585685 A JP19585685 A JP 19585685A JP S6256597 A JPS6256597 A JP S6256597A
Authority
JP
Japan
Prior art keywords
plating
pad
plated
plated film
electronic parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60195856A
Other languages
English (en)
Inventor
Masao Sekihashi
関端　正雄
Toshihiko Oota
敏彦 太田
Osamu Miyazawa
修 宮沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60195856A priority Critical patent/JPS6256597A/ja
Priority to KR1019860005072A priority patent/KR900003472B1/ko
Priority to EP86110808A priority patent/EP0214465B1/en
Priority to DE8686110808T priority patent/DE3661547D1/de
Priority to US06/895,842 priority patent/US4765528A/en
Publication of JPS6256597A publication Critical patent/JPS6256597A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01—ELECTRIC ELEMENTS
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、舎属表面上に♀メッキを有する電子部品に関
する。
〔発明の背景〕
金は耐熱性、耐食性、ハンダ付性、ワイヤボンデング性
あるいはＡ　ｕ　−Ｓ　ｉ共晶合金によるベレット付性
がすくれているので、各種の電子部品に広く利用されて
いる。
以下金メッキに関連して、セラミック基板にメノタライ
ズ層のパッドを施した電子部品の製造過程について説明
する。セラミック基板にメタライズパッドが形成された
後、このパッド上にＮｉメッキを施す。その後リード接
続を必要とするパッドにロウ付は法によりリードを接続
する。次に電気メツキ法により導体にＮｊメクキ皮膜を
形成し、続いてＣｏメッキ皮膜を形成し、さらにＡｕメ
ッキを２＠す。次に所定のバンド上に半導体ベレットを
ダイボンディングし、ワイヤボンデング法によってベレ
ットと他のパッドとを接続した後、低融点ガラス等によ
り半導体の封止暑行なう。ここでＡｕの下地にＮｉ−Ｃ
ｏメッキを施すのは、ワイヤボンデング性に封止加熱す
るとＡｕメッキが剥離する問題があり、これ？防ぐため
である。しかしＮｉメッキをし、その上にＣｏメッキを
行なう工種において、メッキ時に発生する水素ガスがメ
ッキ層内に吸蔵され、ベレット付は時および低融点ガラ
ス封止時の加熱により、ベレット付時にベレット内に形
成されたＡｕ−５ｉ合金中にボイドとなって残留し、ベ
レット付けの信頼性上重大な欠陥となる。またＮｉ−Ｃ
ｏ−Ａｕのメッキ層は５層メッキになっているため層間
のメッキ歪が太き（なり、リードを曲げたときメンキ剥
゛れが発生するという問題がある。
なおこの分野に関連する技術として、特開昭５５−３４
６９２号公報、＊開昭５８−４９５５号公報あるいは特
開昭５９−１５５９５０号公報に記載された技術などが
ある。
〔発明の目的〕
本発明の目的は、Ｎｉ−Ｃｏメッキを下地として金メッ
キを行なう電子部品において、ベレット付時に形成され
るＡＵ−８ｉ共晶中にボイドのない電子部品のメッキ方
法を提供することにある。
〔発明の概要〕
本発明は、金属面上にニッケルメッキを行−その上にコ
バルトメッキを行った後金メッキを施す電子部品におい
て、金メッキを施した後にアニール処理を施す電子部品
のメッキ方法を特徴とする。
〔発明の実施例〕
以下本発明の一実施例について３−１図により説明する
。
才１図は、完成した電子部品の断面図であり、１はセラ
ミック基板、９は半導体のベレット、１０はワイヤボン
デングが施されたワイヤ、５はこの電子部品より突出す
るリードである。２α、２４および２Ｃはセラミック基
板１上に形成された導体のパッドであり、２４はベレッ
ト９が接続されるパッド、２４はワイヤボンデングが行
われるパッド、２ｃはリード５が接続されるパッドであ
る。１１は封止キャップである。
以下本実施例の方法について・１員を追って説明する。
まずセラミック基板１上にスクリーン印刷法などにより
、ＷあるいはＭｏ等の高融点金属を素材とするパッドを
形成し、セラミック基板１とともに焼結すると、セラミ
ックとこのような金属が一体となって相互焼結され、パ
ッド２ｃＬｔ２４および２ｃが形成される。その後この
パッド２α、２Ｊ３′および２ｃ上にＮｉメッキを行な
ってＮｉメッキ皮膜３を形成する。
次にバンド２ｃにたとえば共晶銀ロウ材４によってリー
ド５をロウ付けする。次に電気メツキ法によって、Ｎｉ
メッキ皮膜６を２〜５μｍ程度形成し、次にＣｏメッキ
皮膜７を０．５．２μｍ程度施し、さらにＡｕメッキ皮
膜８を１〜３μｍ施す。その後Ｎ、雰囲気中でこの電子
部品を４５０°Ｃ１１０分間加熱し、アニール処理ン実
施する。
その後通常速り、ベレット９をパッド２ｃＬにダイボン
デングし、ワイヤボンデング法によりベレット９とパッ
ド２にとをワイヤ１０で後続する。その後低融点ガラス
によって封止キャップ１１をセラミック基板１に溶着し
ベレット９を封止する。最後にリード５を半田コートす
る。
以上のようにアニール処理ケ行なった後、リードの９０
　°曲げを行なったがメッキの剥離は発生しなかった。
また封止後ベレット付部をＸ線により観察したがボイド
の□発生もなく、電子部品の信頼性を大巾に向上できた
。なお当日付性等も特に異常はな（、良好な結果が得ら
れた。
〔発明の効果〕
本発明によれば、メッキ後のアニール処理によってメッ
キ中の残留ガスを除去できるので、Ａｕ−５ｉ共晶甲に
ボイドも発生しない信頼性の高い電子部品のメッキ法が
得られる。
斗 １、　ｒ　（ｎ　＋ｔｔＪ４門ａｍ＋ｉ／ＩＪｚ、Ａａ
。

Claims (1)

    【特許請求の範囲】
  1. 　金属面上にニッケルメッキを行い、その上にコバルト
    メッキを行つた後金メッキを施す電子部品において、前
    記金メッキを施した後に前記電子部品のアニール処理を
    施すことを特徴とする電子部品のメッキ方法。
JP60195856A 1985-09-06 1985-09-06 電子部品のメツキ方法 Pending JPS6256597A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60195856A JPS6256597A (ja) 1985-09-06 1985-09-06 電子部品のメツキ方法
KR1019860005072A KR900003472B1 (ko) 1985-09-06 1986-06-25 전자부품의 도금방법
EP86110808A EP0214465B1 (en) 1985-09-06 1986-08-05 Plating process for an electronic part
DE8686110808T DE3661547D1 (en) 1985-09-06 1986-08-05 Plating process for an electronic part
US06/895,842 US4765528A (en) 1985-09-06 1986-08-12 Plating process for an electronic part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60195856A JPS6256597A (ja) 1985-09-06 1985-09-06 電子部品のメツキ方法

Publications (1)

Publication Number Publication Date
JPS6256597A true JPS6256597A (ja) 1987-03-12

Family

ID=16348133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60195856A Pending JPS6256597A (ja) 1985-09-06 1985-09-06 電子部品のメツキ方法

Country Status (5)

Country Link
US (1) US4765528A (ja)
EP (1) EP0214465B1 (ja)
JP (1) JPS6256597A (ja)
KR (1) KR900003472B1 (ja)
DE (1) DE3661547D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0364494A (ja) * 1989-07-31 1991-03-19 Yazaki Corp 金めっき被膜の処理方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960039315A (ko) * 1995-04-06 1996-11-25 이대원 리드프레임 제조방법
JP3890539B2 (ja) * 1996-04-12 2007-03-07 Ｄｏｗａホールディングス株式会社 セラミックス−金属複合回路基板
KR100243368B1 (ko) * 1996-10-18 2000-02-01 유무성 리드프레임의 열처리 방법
CN102544884B (zh) * 2011-12-23 2015-04-01 富士康(昆山)电脑接插件有限公司 电连接器、电连接器壳体及其表面处理的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644794A (en) * 1979-09-14 1981-04-24 Toyota Motor Corp Dehydrogenation treatment of plated member

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4411965A (en) * 1980-10-31 1983-10-25 Occidental Chemical Corporation Process for high speed nickel and gold electroplate system and article having improved corrosion resistance
JPS58158950A (ja) * 1982-03-16 1983-09-21 Nec Corp 半導体装置
EP0127857B1 (en) * 1983-05-28 1987-07-29 Masami Kobayashi Solderable stainless steel article and method for making same
JPS60115247A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644794A (en) * 1979-09-14 1981-04-24 Toyota Motor Corp Dehydrogenation treatment of plated member

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0364494A (ja) * 1989-07-31 1991-03-19 Yazaki Corp 金めっき被膜の処理方法

Also Published As

Publication number Publication date
KR900003472B1 (ko) 1990-05-19
DE3661547D1 (en) 1989-02-02
KR870003234A (ko) 1987-04-16
US4765528A (en) 1988-08-23
EP0214465A1 (en) 1987-03-18
EP0214465B1 (en) 1988-12-28

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