KR900003472B1 - 전자부품의 도금방법 - Google Patents

전자부품의 도금방법 Download PDF

Info

Publication number
KR900003472B1
KR900003472B1 KR1019860005072A KR860005072A KR900003472B1 KR 900003472 B1 KR900003472 B1 KR 900003472B1 KR 1019860005072 A KR1019860005072 A KR 1019860005072A KR 860005072 A KR860005072 A KR 860005072A KR 900003472 B1 KR900003472 B1 KR 900003472B1
Authority
KR
South Korea
Prior art keywords
plating
pad
electronic component
electronic part
electronic
Prior art date
Application number
KR1019860005072A
Other languages
English (en)
Other versions
KR870003234A (ko
Inventor
마사오 세끼하다
도시히꼬 오오다
오사무 미야자와
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미다 가쓰시게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미다 가쓰시게 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR870003234A publication Critical patent/KR870003234A/ko
Application granted granted Critical
Publication of KR900003472B1 publication Critical patent/KR900003472B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

내용 없음.

Description

전자부품의 도금방법
제 1 도는 전자부품의 단면도
본원 발명은 금속표면상에 금도금을 갖는 전자부품에 관한 것이다. 금은 내열성, 내식성, 납땜 부착성, 와이어본딩성 또는 Au-Si공정(共晶)합금을 형성하는 것에 의한 펠렛부착성이 뛰어나므로, 각종의 전자부품에 널리 이용되고 있다.
이하 금도금에 관련해서, 세라믹기판에 금속화층(metallized layer)의 패드(pad)를 실시한 전자부품의 제조과정에 대해 설명한다. 세라믹기판에 금속화층 패드가 형성된 다음, 이 패드상에 Ni도금을 실시한다. 그 후 리이드접속을 필요로 하는 패드에 납땜법에 의해 리이드를 접속한다. 다음에 전기도금법에 의해 도체에 Ni도금피막을 형성하고, 이어서 Co 도금피막을 형성시키며, 다시 Au도금을 실시한다.
다음에 소정의 패드상에 반도체 펠렛을 다이본딩하고, 와이어본딩법에 의해 펠렛과 다른 패드를 접속한 다음, 저융점 유리 등에 의해 반도체를 봉해서 막는다. 여기서 Au의 본바탕에 Ni-Co 도금을 실시하는 것은, 와이어본딩 후에 봉해서 막아 가열하면 Au 도금이 벗겨지는 문제가 있어서, 이것을 방지하기위해서이다. 그러나 Ni 도금을 하고, 그 위에 Co 도금을 하는 공정에 있어서, 도금시에 발생하는 수소가스가 도금층내에 흡수저장되어, 펠렛 부착시 및 저융점 유리를 봉해서 막을 대의 가열에 의해, 펠렛 부착시에 펠렛내에 형성된 Au -Si 합금중에 보이드(void)로 되어 잔류되어, 펠렛 부착의 신뢰성상 중대한 결함으로 된다. 또 Ni -Co -Au의 도금층은 3층 도금으로 되어 있기 때문에 층간의 도금 변형이 커져, 리이드를 굽혔을 때 도금이 벗겨지는 일이 발생한다고 하는 문제가 있다.
그리고, 이 분야에 관련한 기술로서, 일본국 공개특허 소 55-34692호, 동 소 58-4955호 또는 동 소 59-155950호 공보에 개시된 기술 등이 있다.
본원 발명의 목적은 Ni -Co 도금을 본바탕으로 하여 금도금을 하는 전자부품에 있어서, 펠렛 부착시에 형성되는 Au -Si 공정중에 보이드가 없는 전자부품의 도금방법을 제공하는데 있다.
본원 발명은 전자부품의 금속면상에 니켈도금을 하고, 그 위에 코발트도금을 하며, 다시 금도금을 실시한 다음에 어니일링(annealing) 처리를 하는 전자부품의 도금방법을 특징으로 한다.
다음에 본원 발명의 일실시예에 대해 제 1 도에 의거하여 설명한다.
제 1 도는 완성한 전자부품의 단면도이며, (1)은 세라믹기판, (9)는 반도체의 펠렛, (10)은 와이어본딩이 실시된 와이어, (5)는 이 전자부품에서 도출되는 리이드이다. (2a), (2b) 및 (2c)는 세라믹기판(1) 상에 형성된 도체의 패드이며, (2a)는 펠렛(9)이 접속되는 패드, (2b)는 와이어본딩이 행해지는 패드, (2c)는 리이드(5)가 접속되는 패드이다. (11)은 봉해서 막는 캡이다. 다음에 본 실시예의 방법에 대해 순서대로 설명한다.
먼저 세라믹기판(1)상에 스크리인 인쇄법 등에 의해, W 또는 Mo 등의 고융점 금속을 소재로 하는 패드를 형성하고, 세라믹기판(1)과 함께 소결하면, 세라믹과 이와 같은 금속이 일체로 되어 서로 소결되어서 패드(2a), (2b) 및 (2c)가 형성된다. 그 후 패드(2a), (2b) 및 (2c) 상에 Ni 도금을 하여 Ni도금피막(3)을 형성한다.
다음에 패드(2c)에 예를 들면 공정은(共晶銀) 밀납재(4)에 의해 리이드(5)를 납땜한다. 다음에 전기도금법에 의해 Ni 도금피막(6)을 2-5㎛정도 형성하고, 다음에 Co 도금피막(7)을 0.5-2㎛ 정도 실시하고, 다시 Au 도금피막(8)을 1-3㎛ 실시한다. 그후 N2분위기중에서 이 전자부품을 45℃, 10분간 가열하고, 어니일링처리를 실시한다.
그 후, 통상대로 펠렛(9)을 패드(2a)에 다이본딩하고, 와이어 본딩법에 의해 펠렛(9)과 패드(2b)를 와이어(10)로 접속한다. 그 후 저융점 유리에 의해 봉해서 막는 캡(11)을 세라믹기판(1)에 녹여 붙여 펠렛(9)을 봉해서 막는다. 마지막으로 리이드(5)를 납땜한다.
이상과 같이 어니일링처리를 한 다음, 리이드의 90°굽힘을 했지만 도금은 벗겨지지 않았다. 또 봉해서 막는 다음 펠렛부착부를 X선에 의해 관찰했지만 보이드의 발생도 없고, 전자부품의 신뢰성을 대폭 향상시킬 수 있었다. 그리고 납땜성 등도 특별히 이상은 없었고 양호한 결과가 얻어졌다.
본원 발명에 의하면, 도금 후의 어니일링처리에 의해 도금중의 잔류가스를 제거할 수 있으므로, Au-Si 공정중에 보이드로 발생하지않는 신뢰성 높은 전자부품의 도금법이 얻어진다.

Claims (4)

  1. 전자부품의 금속면(3, 5)상에 Ni도금(6)을 하고, 그 위에 Co도금(7)을 하고, 다시 Au 도금(8)을 순차 실시하여 이루어지는 전자부품으 도금방법에 있어서, 상기 도금을 실시한 다음에 상기 전자부품의 어니일링 처리를 행하는 것을 특징으로 하는 전자부품의 도금방법.
  2. 제 1 항에 있어서, 전자부품을 N2분위기중에서 450℃, 10분간 가열하여 어니일링 처리하는 것을 특징으로 하는 전자부품의 도금방법.
  3. 제 1 항에 있어서, 전기도금법에 의해 Ni 도금(6) 2-5㎛, Co 도금(7) 0.5-2㎛, 그리고 Au 도금(8) 1 -3㎛두께로 실시하는 것을 특징으로 하는 전자부품의 도금방법.
  4. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, W 또는 Mo금속으로 이루어진 금속도체의 패드(2a, 2b, 2c)는 세라믹기판(1)상에 형성되어 소결되며, 상기 금속도체의 패드는 전자부품의 금속면(3)으로서 이 패드상에 Ni, Co 및 Au도금(6, 7, 8)을 실시하는 것을 특징으로 하는 전자부품의 도금방법.
KR1019860005072A 1985-09-06 1986-06-25 전자부품의 도금방법 KR900003472B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60-195856 1985-09-06
JP60195856A JPS6256597A (ja) 1985-09-06 1985-09-06 電子部品のメツキ方法
JP85-195856 1986-09-06

Publications (2)

Publication Number Publication Date
KR870003234A KR870003234A (ko) 1987-04-16
KR900003472B1 true KR900003472B1 (ko) 1990-05-19

Family

ID=16348133

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860005072A KR900003472B1 (ko) 1985-09-06 1986-06-25 전자부품의 도금방법

Country Status (5)

Country Link
US (1) US4765528A (ko)
EP (1) EP0214465B1 (ko)
JP (1) JPS6256597A (ko)
KR (1) KR900003472B1 (ko)
DE (1) DE3661547D1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0364494A (ja) * 1989-07-31 1991-03-19 Yazaki Corp 金めっき被膜の処理方法
KR960039315A (ko) * 1995-04-06 1996-11-25 이대원 리드프레임 제조방법
JP3890539B2 (ja) * 1996-04-12 2007-03-07 Ｄｏｗａホールディングス株式会社 セラミックス−金属複合回路基板
KR100243368B1 (ko) * 1996-10-18 2000-02-01 유무성 리드프레임의 열처리 방법
CN102544884B (zh) * 2011-12-23 2015-04-01 富士康(昆山)电脑接插件有限公司 电连接器、电连接器壳体及其表面处理的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644794A (en) * 1979-09-14 1981-04-24 Toyota Motor Corp Dehydrogenation treatment of plated member
US4411965A (en) * 1980-10-31 1983-10-25 Occidental Chemical Corporation Process for high speed nickel and gold electroplate system and article having improved corrosion resistance
JPS58158950A (ja) * 1982-03-16 1983-09-21 Nec Corp 半導体装置
EP0127857B1 (en) * 1983-05-28 1987-07-29 Masami Kobayashi Solderable stainless steel article and method for making same
JPS60115247A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
EP0214465A1 (en) 1987-03-18
JPS6256597A (ja) 1987-03-12
US4765528A (en) 1988-08-23
KR870003234A (ko) 1987-04-16
EP0214465B1 (en) 1988-12-28
DE3661547D1 (en) 1989-02-02

Similar Documents

Publication Publication Date Title
US3881884A (en) Method for the formation of corrosion resistant electronic interconnections
US3663184A (en) Solder bump metallization system using a titanium-nickel barrier layer
US4980239A (en) Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer structure
US3729820A (en) Method for manufacturing a package of a semiconductor element
US4675243A (en) Ceramic package for semiconductor devices
US6444562B1 (en) Nickel alloy films for reduced intermetallic formation in solder
JP2915888B1 (ja) 配線基板及びその製造方法
USH498H (en) Electronic component including soldered electrical leads
KR900003472B1 (ko) 전자부품의 도금방법
US6404066B1 (en) Semiconductor device and process for manufacturing the same
KR101038491B1 (ko) 리드프레임 및 그 제조 방법
JPH01257356A (ja) 半導体用リードフレーム
JPS61140160A (ja) 半導体用リ−ドフレ−ム
JPS613663A (ja) 金属部材の鑞付け前処理方法
JPS628532A (ja) 金メツキされた電子部品パツケ−ジ
JPS63137574A (ja) メタライズ金属層の表面被覆構造
JPS60195953A (ja) 半導体装置およびその製造方法
JPS60107845A (ja) 半導体用回路基板
JPH0762273B2 (ja) 電子部品の製造方法
JPS6196098A (ja) 金メツキされた電子部品
JPS628533A (ja) 金めつきされた電子部品パツケ−ジ
JPS60143637A (ja) 電子部品
JPH0558259B2 (ko)
JPS6360549A (ja) 金の導電層を有する電子部品
JPS6383291A (ja) 金の導電層を有する電子部品

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19971226

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee