KR880008444A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR880008444A KR880008444A KR870014022A KR870014022A KR880008444A KR 880008444 A KR880008444 A KR 880008444A KR 870014022 A KR870014022 A KR 870014022A KR 870014022 A KR870014022 A KR 870014022A KR 880008444 A KR880008444 A KR 880008444A
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- Prior art keywords
- metal layer
- alloy
- semiconductor device
- thickness
- aluminum
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Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 일실시예시 반도체장치의 단면도로서, 동계의 접합와이어를 접합하기 전 상태도.
제4도는 본 발명의 일실시예를 나타내는 반도체장치의 단면도로서, 동계의 접합와이어를 접합한 후의 상태도.
Claims (13)
- 반도체소자와, 이 소자위에 형성된 전극패드와, 이 전극패드위에 와이어 접착된, 상기 전극패도와 외부리드 등을 접속하기 위한 동계의 와이어 등을 구비한 반도체장치에 있어서, 상기 전극패드는 상기 반도체 소자위에 형성되고, 반도체와 저항치 조절이 가능하고, 상기 반도체 소자의 기능에 악영향을 주지 않는 제1의 금속층과, 이 제1의 금속층 위에 형성되고 와이어 접착시의 압압력에 대항할 수 있는 경도를 갖는 제2의 금속층과, 이 제2금속층위에 형성되며, 동계의 와이어로 접착이 가능한 조성을 갖는 제3의 금속층등으로 기본적으로 구성되어 있는 반도체장치.
- 제1항에 있어서, 상기 제1의 금속층은, 알미늄, 알미늄합금, 금 및 금합금의 군에서 선택된 하나의 금속인 것을 특징으로 하는 반도체장치.
- 제2항에 있어서, 상기 알미늄 또는 알미늄합금으로 된 제1의 금속층의 두께는 0.1-2.5㎛임을 특징으로 하는 반도체장치.
- 제2항에 있어서, 상기 금 또는 금합금으로 된 제1의 금속층의 두께는 0.2-2.5㎛임을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 제2의 금속층이은 바나듐, 바나듐합금, 니켈, 니켈합금, 차탄, 치탄합금, 탄탈, 탄탈합금의 군에서 선택된 하나의 금속임을 특징으로 하는 반도체장치.
- 제5항에 있어서, 바나듐, 바나듐합금, 탄탈 또는 탄탈합금으로 된 제2의 금속층의 두께는 0.05-1㎛임을 특징으로 하는 반도첼 장치.
- 제5항에 있어서, 니켈 또는 니켈합금으로 된 제2의 금속층의 두께는 300-10000엉스트롬임을 특징으로 하는 반도체장치.
- 제5항에 있어서, 치탄 또는 치탄합금으로 된 제2의 금속층의 두게는 300-10000엉스트롬임을 특징으로 하는 반도체장치.
- 제1항에 있어서, 제3의 금속층은 알미늄, 알미늄합금, 금 및 금합금의 군에서 선택된 하나의 합금임을 특징으로 하는 반도체장치.
- 제9항에 있어서, 알미늄 또는 알미늄합금으로 된 제3의 금속층의 두께는 0.1-5.0㎛임을 특징으로 하는 반도체장치.
- 제9항에 있어서, 금 또는 금합금의 금속층의 두게는 0.2-2.5㎛임을 특징으로 하는 반도체장치.
- 제1항 기재에 있어서, 제1의 금속층은 막두께 0.1-2.5㎛의 알루미늄 또는 알미늄 합금이고, 제2의 금속층은 막두께 0.1-0.8㎛의 바나듐 또는 바나듐 합금이고, 제3의 금속층은, 막두께 0.5-5.0㎛의 알루미늄 또는 알루미늄 합금임을 특징으로 하는 반도체장치.
- 제1항 기재에 있어서, 상기 전극패드는, 제1 내지 제3의 금속층을 순차 증착형성한 다음, 가공을 하여 패터닝 함으로서 형성되는 것을 특징으로 하는 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61-294902 | 1986-12-12 | ||
JP61294902A JPS63148646A (ja) | 1986-12-12 | 1986-12-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880008444A true KR880008444A (ko) | 1988-08-31 |
KR910000757B1 KR910000757B1 (ko) | 1991-02-06 |
Family
ID=17813730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870014022A KR910000757B1 (ko) | 1986-12-12 | 1987-12-09 | 반도체 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5060051A (ko) |
EP (1) | EP0271110B1 (ko) |
JP (1) | JPS63148646A (ko) |
KR (1) | KR910000757B1 (ko) |
CN (1) | CN1020029C (ko) |
DE (1) | DE3787709T2 (ko) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0734449B2 (ja) * | 1987-11-30 | 1995-04-12 | 三菱電機株式会社 | 半導体装置の電極接合部構造 |
US5293073A (en) * | 1989-06-27 | 1994-03-08 | Kabushiki Kaisha Toshiba | Electrode structure of a semiconductor device which uses a copper wire as a bonding wire |
JPH0682704B2 (ja) * | 1989-06-27 | 1994-10-19 | 株式会社東芝 | 半導体装置 |
NL8902695A (nl) * | 1989-11-01 | 1991-06-03 | Philips Nv | Interconnectiestructuur. |
JPH03208355A (ja) * | 1990-01-10 | 1991-09-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5734226A (en) * | 1992-08-12 | 1998-03-31 | Micron Technology, Inc. | Wire-bonded getters useful in evacuated displays |
US5567981A (en) * | 1993-03-31 | 1996-10-22 | Intel Corporation | Bonding pad structure having an interposed rigid layer |
KR970011650B1 (en) * | 1994-01-10 | 1997-07-12 | Samsung Electronics Co Ltd | Fabrication method of good die of solder bump |
US5483105A (en) * | 1994-04-25 | 1996-01-09 | International Business Machines Corporation | Module input-output pad having stepped set-back |
US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
US5865658A (en) * | 1995-09-28 | 1999-02-02 | Micron Display Technology, Inc. | Method for efficient positioning of a getter |
US6140702A (en) * | 1996-05-31 | 2000-10-31 | Texas Instruments Incorporated | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect |
JP3504448B2 (ja) * | 1996-10-17 | 2004-03-08 | 株式会社ルネサステクノロジ | 半導体装置 |
US5931713A (en) * | 1997-03-19 | 1999-08-03 | Micron Technology, Inc. | Display device with grille having getter material |
TW373197B (en) * | 1997-05-14 | 1999-11-01 | Murata Manufacturing Co | Electronic device having electric wires and the manufacturing method thereof |
US6140150A (en) * | 1997-05-28 | 2000-10-31 | Texas Instruments Incorporated | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect |
EP1621893B1 (en) * | 1997-07-24 | 2007-04-25 | Mitsubishi Denki Kabushiki Kaisha | Device for removing foreign matter adhering to a probe tip face |
JP3121311B2 (ja) | 1998-05-26 | 2000-12-25 | 日本電気株式会社 | 多層配線構造及びそれを有する半導体装置並びにそれらの製造方法 |
JP2002076051A (ja) * | 2000-09-01 | 2002-03-15 | Nec Corp | 半導体装置のボンディングパッド構造及びボンディング方法 |
JP4979154B2 (ja) * | 2000-06-07 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5019666B2 (ja) * | 2000-06-22 | 2012-09-05 | ローム株式会社 | 半導体装置の製造方法 |
US6715663B2 (en) * | 2002-01-16 | 2004-04-06 | Intel Corporation | Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method |
WO2004105132A1 (en) * | 2003-05-20 | 2004-12-02 | Axalto Sa | An electrical connection for a microelectronic chip, and a method for manufacturing such a connection |
DE102004047522B3 (de) * | 2004-09-28 | 2006-04-06 | Infineon Technologies Ag | Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben |
US20090079082A1 (en) * | 2007-09-24 | 2009-03-26 | Yong Liu | Bonding pad structure allowing wire bonding over an active area in a semiconductor die and method of manufacturing same |
TWI372453B (en) * | 2008-09-01 | 2012-09-11 | Advanced Semiconductor Eng | Copper bonding wire, wire bonding structure and method for processing and bonding a wire |
US8357998B2 (en) * | 2009-02-09 | 2013-01-22 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
TW201030916A (en) * | 2009-02-11 | 2010-08-16 | Advanced Semiconductor Eng | Pad and package structure using the same |
JP2010258286A (ja) * | 2009-04-27 | 2010-11-11 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
TWI412114B (zh) | 2009-12-31 | 2013-10-11 | Advanced Semiconductor Eng | 半導體封裝結構及其製造方法 |
WO2012005073A1 (ja) * | 2010-07-08 | 2012-01-12 | 三菱電機株式会社 | 半導体装置、半導体パッケージ及びそれらの製造方法 |
CN103430335B (zh) * | 2011-03-10 | 2016-05-04 | 同和电子科技有限公司 | 半导体发光二极管及其制造方法 |
JP5946286B2 (ja) * | 2012-02-17 | 2016-07-06 | 新日本無線株式会社 | パワー半導体装置及びその製造方法 |
US8618677B2 (en) | 2012-04-06 | 2013-12-31 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
WO2013190638A1 (ja) * | 2012-06-19 | 2013-12-27 | パイオニア株式会社 | 導体の接続構造、電子機器 |
DE112014002135T5 (de) * | 2013-04-25 | 2016-01-14 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
CN110246772A (zh) * | 2013-05-10 | 2019-09-17 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
US9343422B2 (en) * | 2014-03-31 | 2016-05-17 | Freescale Semiconductor, Inc. | Structure for aluminum pad metal under ball bond |
JP2015204333A (ja) * | 2014-04-11 | 2015-11-16 | 豊田合成株式会社 | 半導体装置および半導体装置の製造方法 |
DE102014109183A1 (de) * | 2014-07-01 | 2016-01-21 | Infineon Technologies Ag | Verfahren zur Herstellung eines Schaltungsträgers und zum Verbinden eines elektrischen Leiters mit einer Metallisierungsschicht eines Schaltungsträgers |
TWI569396B (zh) * | 2014-12-08 | 2017-02-01 | 財團法人工業技術研究院 | 具有焊線的晶片結構 |
JP6929254B2 (ja) * | 2018-08-23 | 2021-09-01 | 三菱電機株式会社 | 電力用半導体装置 |
CN111106084B (zh) * | 2018-10-25 | 2021-08-10 | 株洲中车时代半导体有限公司 | 用于引线键合的衬底金属层结构及功率半导体器件 |
EP3671861A1 (en) * | 2018-12-17 | 2020-06-24 | Nexperia B.V. | Semiconductor device and electrical contact |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2170846B1 (ko) * | 1972-02-03 | 1975-10-24 | Garyainov Stanislav | |
US4176443A (en) * | 1977-03-08 | 1979-12-04 | Sgs-Ates Componenti Elettronici S.P.A. | Method of connecting semiconductor structure to external circuits |
JPS54128280A (en) * | 1978-03-29 | 1979-10-04 | Hitachi Ltd | Resin-sealed semiconductor device |
JPS58103168A (ja) * | 1981-12-16 | 1983-06-20 | Fujitsu Ltd | 半導体装置 |
JPS59121871A (ja) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | 半導体装置 |
US4720908A (en) * | 1984-07-11 | 1988-01-26 | Texas Instruments Incorporated | Process for making contacts and interconnects for holes having vertical sidewalls |
JPS62136838A (ja) * | 1985-12-10 | 1987-06-19 | Mitsubishi Electric Corp | 半導体装置 |
-
1986
- 1986-12-12 JP JP61294902A patent/JPS63148646A/ja active Granted
-
1987
- 1987-12-09 KR KR1019870014022A patent/KR910000757B1/ko not_active IP Right Cessation
- 1987-12-10 EP EP87118354A patent/EP0271110B1/en not_active Expired - Lifetime
- 1987-12-10 DE DE87118354T patent/DE3787709T2/de not_active Expired - Fee Related
- 1987-12-12 CN CN87107402A patent/CN1020029C/zh not_active Expired - Lifetime
-
1991
- 1991-01-25 US US07/645,707 patent/US5060051A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0482183B2 (ko) | 1992-12-25 |
CN87107402A (zh) | 1988-06-22 |
DE3787709D1 (de) | 1993-11-11 |
US5060051A (en) | 1991-10-22 |
KR910000757B1 (ko) | 1991-02-06 |
DE3787709T2 (de) | 1994-04-21 |
EP0271110A2 (en) | 1988-06-15 |
CN1020029C (zh) | 1993-03-03 |
JPS63148646A (ja) | 1988-06-21 |
EP0271110A3 (en) | 1989-02-22 |
EP0271110B1 (en) | 1993-10-06 |
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