KR880008444A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR880008444A
KR880008444A KR870014022A KR870014022A KR880008444A KR 880008444 A KR880008444 A KR 880008444A KR 870014022 A KR870014022 A KR 870014022A KR 870014022 A KR870014022 A KR 870014022A KR 880008444 A KR880008444 A KR 880008444A
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South Korea
Prior art keywords
metal layer
alloy
semiconductor device
thickness
aluminum
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KR870014022A
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English (en)
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KR910000757B1 (ko
Inventor
오사무 우수다
Original Assignee
아오이 죠이찌
가부시기 가이샤 도오시바
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Publication of KR880008444A publication Critical patent/KR880008444A/ko
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Publication of KR910000757B1 publication Critical patent/KR910000757B1/ko

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Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 일실시예시 반도체장치의 단면도로서, 동계의 접합와이어를 접합하기 전 상태도.
제4도는 본 발명의 일실시예를 나타내는 반도체장치의 단면도로서, 동계의 접합와이어를 접합한 후의 상태도.

Claims (13)

  1. 반도체소자와, 이 소자위에 형성된 전극패드와, 이 전극패드위에 와이어 접착된, 상기 전극패도와 외부리드 등을 접속하기 위한 동계의 와이어 등을 구비한 반도체장치에 있어서, 상기 전극패드는 상기 반도체 소자위에 형성되고, 반도체와 저항치 조절이 가능하고, 상기 반도체 소자의 기능에 악영향을 주지 않는 제1의 금속층과, 이 제1의 금속층 위에 형성되고 와이어 접착시의 압압력에 대항할 수 있는 경도를 갖는 제2의 금속층과, 이 제2금속층위에 형성되며, 동계의 와이어로 접착이 가능한 조성을 갖는 제3의 금속층등으로 기본적으로 구성되어 있는 반도체장치.
  2. 제1항에 있어서, 상기 제1의 금속층은, 알미늄, 알미늄합금, 금 및 금합금의 군에서 선택된 하나의 금속인 것을 특징으로 하는 반도체장치.
  3. 제2항에 있어서, 상기 알미늄 또는 알미늄합금으로 된 제1의 금속층의 두께는 0.1-2.5㎛임을 특징으로 하는 반도체장치.
  4. 제2항에 있어서, 상기 금 또는 금합금으로 된 제1의 금속층의 두께는 0.2-2.5㎛임을 특징으로 하는 반도체장치.
  5. 제1항에 있어서, 상기 제2의 금속층이은 바나듐, 바나듐합금, 니켈, 니켈합금, 차탄, 치탄합금, 탄탈, 탄탈합금의 군에서 선택된 하나의 금속임을 특징으로 하는 반도체장치.
  6. 제5항에 있어서, 바나듐, 바나듐합금, 탄탈 또는 탄탈합금으로 된 제2의 금속층의 두께는 0.05-1㎛임을 특징으로 하는 반도첼 장치.
  7. 제5항에 있어서, 니켈 또는 니켈합금으로 된 제2의 금속층의 두께는 300-10000엉스트롬임을 특징으로 하는 반도체장치.
  8. 제5항에 있어서, 치탄 또는 치탄합금으로 된 제2의 금속층의 두게는 300-10000엉스트롬임을 특징으로 하는 반도체장치.
  9. 제1항에 있어서, 제3의 금속층은 알미늄, 알미늄합금, 금 및 금합금의 군에서 선택된 하나의 합금임을 특징으로 하는 반도체장치.
  10. 제9항에 있어서, 알미늄 또는 알미늄합금으로 된 제3의 금속층의 두께는 0.1-5.0㎛임을 특징으로 하는 반도체장치.
  11. 제9항에 있어서, 금 또는 금합금의 금속층의 두게는 0.2-2.5㎛임을 특징으로 하는 반도체장치.
  12. 제1항 기재에 있어서, 제1의 금속층은 막두께 0.1-2.5㎛의 알루미늄 또는 알미늄 합금이고, 제2의 금속층은 막두께 0.1-0.8㎛의 바나듐 또는 바나듐 합금이고, 제3의 금속층은, 막두께 0.5-5.0㎛의 알루미늄 또는 알루미늄 합금임을 특징으로 하는 반도체장치.
  13. 제1항 기재에 있어서, 상기 전극패드는, 제1 내지 제3의 금속층을 순차 증착형성한 다음, 가공을 하여 패터닝 함으로서 형성되는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870014022A 1986-12-12 1987-12-09 반도체 장치 KR910000757B1 (ko)

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JP61294902A JPS63148646A (ja) 1986-12-12 1986-12-12 半導体装置

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JPH0482183B2 (ko) 1992-12-25
CN87107402A (zh) 1988-06-22
DE3787709D1 (de) 1993-11-11
US5060051A (en) 1991-10-22
KR910000757B1 (ko) 1991-02-06
DE3787709T2 (de) 1994-04-21
EP0271110A2 (en) 1988-06-15
CN1020029C (zh) 1993-03-03
JPS63148646A (ja) 1988-06-21
EP0271110A3 (en) 1989-02-22
EP0271110B1 (en) 1993-10-06

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