JPH0734449B2 - 半導体装置の電極接合部構造 - Google Patents

半導体装置の電極接合部構造

Info

Publication number
JPH0734449B2
JPH0734449B2 JP62301750A JP30175087A JPH0734449B2 JP H0734449 B2 JPH0734449 B2 JP H0734449B2 JP 62301750 A JP62301750 A JP 62301750A JP 30175087 A JP30175087 A JP 30175087A JP H0734449 B2 JPH0734449 B2 JP H0734449B2
Authority
JP
Japan
Prior art keywords
copper
aluminum
alloy layer
electrode
aluminum alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62301750A
Other languages
English (en)
Other versions
JPH01143332A (ja
Inventor
清昭 津村
仁士 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62301750A priority Critical patent/JPH0734449B2/ja
Priority to KR1019880008447A priority patent/KR920006264B1/ko
Priority to US07/262,804 priority patent/US5003373A/en
Publication of JPH01143332A publication Critical patent/JPH01143332A/ja
Publication of JPH0734449B2 publication Critical patent/JPH0734449B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20108—Temperature range 300 C=<T<350 C, 573.15K =<T< 623.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20109—Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20303—Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/20—Parameters
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    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
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  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、銅を素材にしたワイヤ（銅ワイヤ）を使用
した時の、銅ボールとアルミニウム電極との接合部の構
造に関するものである。
〔従来の技術〕
第３図は従来の銅ワイヤのボンディング構造を示す断面
図、第４図はワイヤボンディング後の銅ボールと銅・ア
ルミニウム合金層を硝酸でエッチングした後のアルミニ
ウムの分布を示す図である。
これらの図において、１は銅ワイヤ先端の銅ボール、２
はアルミニウム電極、21は前記銅ボール１直下のアルミ
ニウム、22は前記銅ボール１周囲のアルミニウム、３は
ボンディング時に生成した銅・アルミニウム合金層で、
銅ボール１直下のアルミニウム21と銅ボール１周囲のア
ルミニウム22を分離させている。４は前記アルミニウム
電極２の下地である酸化物や窒化物などからなる絶縁膜
である。
また、銅・アルミニウム合金層３が生成している部分の
半径をR,銅ボール１直下のアルミニウム21が銅ボール１
周囲のアルミニウム22と分離する部分の半径をr0とす
る。
第３図，第４図において、銅・アルミニウム合金層３は
銅ワイヤの先端を加熱して形成した銅ボール１を300〜4
00℃で加熱したアルミニウム電極２上に加圧しながら、
超音波振動を印加する（超音波熱圧着法）ことにより生
成され、銅ボール１のそれ以上に、機械的接合強度を有
している。この時、アルミニウム電極２は、銅ボール１
の加圧により塑性変形し、銅ボール１直下のアルミニウ
ム21と銅ボール１周囲のアルミニウム22に分離されてし
まい、その結果、デバイスの電気的導通は銅・アルミニ
ウム合金層３と銅ボール１周囲のアルミニウム22の接合
だけで得られている。なお、デバイスとしては、この後
エポキシ系モールド樹脂で封止される。
〔発明が解決しようとする課題〕
従来の半導体装置の電極接合部構造は、以上のように構
成されており、モールド後の劣化は銅・アルミニウム合
金層３の劣化が最も速く、しかも銅ボール１周囲のアル
ミニウム22と接合している銅・アルミニウム合金層３が
わずかに劣化するだけで、電気抵抗が規格値をオーバ
し、デバイスの寿命が終わってしまうという問題点があ
った。
この発明は、上記のような問題点を解消するためになさ
れたもので、銅ボールとアルミニウム電極との電気抵抗
の増加スピードを遅くしてデバイスの寿命を長くした半
導体装置の電極接合部構造を得ることを目的とする。
〔課題を解決するための手段〕
この発明に係る半導体装置の電極接合部構造は、銅ボー
ルを超音波熱圧着によりアルミニウム電極と接合させた
時できる銅・アルミニウム合金層と絶縁膜との間に、ア
ルミニウム電極のアルミニウム層がほぼ全面にわたって
存在する構成としたものである。
〔作用〕
この発明においては、銅・アルミニウム合金層と絶縁膜
との間に、アルミニウム電極のアルミニウム層がほぼ全
面にわたって存在するため、銅ボール直下に広い接触面
積ができ、銅・アルミニウム合金層が腐食して規格値以
上の電気抵抗になるまでの時間、すなわちデバイス寿命
が長くなる。
〔実施例〕
以下、この発明の一実施例を図面について説明する。
第１図はこの発明のボンディング構造を示す断面図、第
２図は銅ボールと銅・アルミニウム合金層を硝酸でエッ
チングした後のアルミニウムの分布を示す図で、それぞ
れ第３図，第４図の構成図に対応している。この発明で
は第１図と第３図の比較から明らかなように、銅ボール
１の直下に存在するアルミニウム電極２、すなわちアル
ミニウム層21A,銅ボール周囲のアルミニウム22の厚みを
従来より厚くしておき、銅ボール１を超音波熱圧着によ
りアルミニウム電極２と接合する。
接合に際しては、チップ圧接力（FORCE）と超音波振動
（POWER）の印加条件によって上記接合が決定される。
例えば、チップ圧接力（FORCE）が一定であれば、超音
波振動（POWER）が高いときは従来の接合構造となり、
超音波振動（POWER）が低いときはこの発明の接合構造
が得られる。他方、超音波振動（POWER）が一定であれ
ば、チップ圧接力（FORCE）が低いときはこの発明の接
合構造となり、チップ圧接力（FORCE）が高いときは、
従来の接合構造となる。
上記により銅ボール１直下にはほぼ全面にわたり、銅・
アルミニウム合金層３が生成し、また、この銅・アルミ
ニウム合金層３と銅ボール１直下のアルミニウム層21A
がほぼ全面にわたって接合しており、さらに、銅ボール
１周囲のアルミニウム22と連続している。つまり、銅・
アルミニウム合金層３とアルミニウム電極２の接合面3A
と絶縁膜４との間には全面にわたってアルミニウム電極
２（銅ボール１直下のアルミニウム層21A）が存在して
いる。
第２図で示す絶縁膜４は銅ボール１直下のアルミニウム
層21Aがすべて銅・アルミニウム合金層３になった部分
である。ここで、銅・アルミニウム合金層３が生成して
いる部分の半径を第３図と同じくＲとする。
この発明によれば、銅ボール１とアルミニウム電極２の
接合は、銅ボール１直下の 銅・アルミニウム合金層３
の全面にあるため、すなわち、銅・アルミニウム合金層
３がアルミニウム電極２との接合面3Aと絶縁膜４との間
に全面にわたってアルミニウム層21Aを存在させて接続
されているため、接合部の電気抵抗が規格値を超えるま
での時間が従来の構造に比較して極めて長くなる。第１
図と第３図において、銅・アルミニウム合金層３の厚み
をl,抵抗率をρとすると、銅・アルミニウム合金層３の
電気抵抗は、第１図の場合には、 第３図の場合には、 で与えられる。ここで、ｒは正常な銅・アルミニウム合
金層３の半径である。第５図にこれをグラフ化して示
す。
銅・アルミニウム合金層３の電気抵抗の規格値をRLと
し、これに対応する第１図，第３図の銅・アルミニウム
合金層３の半径をr1，r2とすると、初期の抵抗値がRLを
超えるまでに銅・アルミニウム合金層３の半径が減少す
る量は、それぞれ（Ｒ−r1），（Ｒ−r2）で、明らかに
（Ｒ−r1）＞（Ｒ−r2）である。
第６図に一例として250℃で高温保存した時の電気抵抗
の変化のグラフを示す。
第６図から明らかなように、従来構造の電気抵抗特性
（Ａ）はt0≒８時間で規格値RLを超えているのに対し、
この発明の電気抵抗特性（Ｂ）はt1＝３t0で規格値RLを
超え、デバイス寿命が長くなったことを示している。上
記例は寿命が数倍以上向上することを示し、t0の値は半
導体素子，モールド材などデバイスを構成する素材組合
せで異なり、この発明の実施例ではt0＝８時間であっ
た。
なお、上記実施例では半導体素子のアルミニウム電極２
の組成はアルミニウムのみとしたが、この発明は一般に
シリコン（Si）や銅（Cu）を数％程度含有するアルミニ
ウムでも同様の効果がある。また、上記実施例では銅・
アルミニウム合金層３とアルミニウム電極２とが全面に
わたって接着しているが、これは第２図のように複数の
島状にとびとびの形でアルミニウム電極２が銅・アルミ
ニウム合金層３となるのであれば80％程度でも実用上支
障はない。
〔発明の効果〕
以上説明したように、この発明は、銅ボールを超音波熱
圧着によりアルミニウム電極と接合させた時できる銅・
アルミニウム合金層と絶縁膜との間に、アルミニウム電
極のアルミニウム層がほぼ全面にわたって存在する構成
としたので、銅・アルミニウム合金層の劣化による電気
抵抗の増加がもたらすデバイスの寿命を最大限に長くす
ることができる効果がある。
【図面の簡単な説明】
第１図はこの発明の一実施例によるボンディング構造を
示す断面図、第２図は第１図の銅ボールと銅・アルミニ
ウム合金層を硝酸でエッチングした後のアルミニウムの
分布を示す図、第３図は従来の銅ワイヤのボンディング
構造を示す断面図、第４図は第３図の銅ボールと銅・ア
ルミニウム合金層を酢酸でエッチングした後のアルミニ
ウムの分布を示す図、第５図は従来例とこの発明のそれ
ぞれの銅・アルミニウム合金層の半径と電気抵抗の関係
を示す図、第６図は250℃の高温保存における電気抵抗
の変化を示す図である。 図において、１は銅ボール、２はアルミニウム電極、３
は銅・アルミニウム合金層、４は絶縁膜、21Aは銅ボー
ル直下のアルミニウム層、22は銅ボール周囲のアルミニ
ウムである。 なお、各図中の同一符号は同一または相当部分を示す。

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】半導体素子の絶縁膜表面上に形成された前
    記半導体素子のアルミニウム電極とリードフレームの内
    部端子とが、銅細線の先端に加熱生成された銅ボールを
    介してワイヤボンディングされる半導体装置の電極接合
    部構造において、前記銅ボールを超音波熱圧着により前
    記アルミニウム電極と接合させた時できる銅・アルミニ
    ウム合金層と前記絶縁膜との間に、前記アルミニウム電
    極のアルミニウム層がほぼ全面にわたって存在すること
    を特徴とする半導体装置の電極接合部構造。
JP62301750A 1987-11-30 1987-11-30 半導体装置の電極接合部構造 Expired - Fee Related JPH0734449B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62301750A JPH0734449B2 (ja) 1987-11-30 1987-11-30 半導体装置の電極接合部構造
KR1019880008447A KR920006264B1 (ko) 1987-11-30 1988-07-07 반도체장치의 전극접합부 구조
US07/262,804 US5003373A (en) 1987-11-30 1988-10-26 Structure of electrode junction for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62301750A JPH0734449B2 (ja) 1987-11-30 1987-11-30 半導体装置の電極接合部構造

Publications (2)

Publication Number Publication Date
JPH01143332A JPH01143332A (ja) 1989-06-05
JPH0734449B2 true JPH0734449B2 (ja) 1995-04-12

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ID=17900715

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Country Link
US (1) US5003373A (ja)
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817189B2 (ja) * 1989-01-13 1996-02-21 三菱電機株式会社 半導体装置の製造方法
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
US5437405A (en) * 1994-08-22 1995-08-01 National Semiconductor Corporation Method and apparatus for stitch bonding of wires to integrated circuit bonding pads
US5662261A (en) * 1995-04-11 1997-09-02 Micron Technology, Inc. Wire bonding capillary
KR100432664B1 (ko) * 1996-10-23 2004-08-25 삼성에스디아이 주식회사 청색형광체
US6031216A (en) * 1998-06-17 2000-02-29 National Semiconductor Corporation Wire bonding methods and apparatus for heat sensitive metallization using a thermally insulated support portion
US6158647A (en) 1998-09-29 2000-12-12 Micron Technology, Inc. Concave face wire bond capillary
JP5162851B2 (ja) * 2006-07-14 2013-03-13 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US20100301467A1 (en) * 2009-05-26 2010-12-02 Albert Wu Wirebond structures
EP2444999A4 (en) * 2009-06-18 2012-11-14 Rohm Co Ltd SEMICONDUCTOR DEVICE
FR2977383A1 (fr) * 2011-06-30 2013-01-04 St Microelectronics Grenoble 2 Plot de reception d'un fil de cuivre
US8800846B2 (en) * 2012-01-27 2014-08-12 Apple Inc. Ultrasonic bonding
JP5943065B2 (ja) * 2012-03-05 2016-06-29 株式会社村田製作所 接合方法、電子装置の製造方法、および電子部品
KR101966773B1 (ko) 2015-05-13 2019-04-08 주식회사 엘지화학 이성질화 반응을 이용한 노말부텐의 분리방법 및 노말부텐을 분리하기 위한 공정시스템

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1052844B (it) * 1975-12-16 1981-07-20 Cnen Procedimento ed apparecchio per l l equilibratura dinamica di corpi in rotazione in particolare per centrifughe
US4258382A (en) * 1978-07-03 1981-03-24 National Semiconductor Corporation Expanded pad structure
US4345136A (en) * 1978-11-13 1982-08-17 The Nippert Company Copper bimetal brazed resistance welding electrode
JPS5933253B2 (ja) * 1979-01-20 1984-08-14 松下電子工業株式会社 半導体装置の電極形成方法
US4290079A (en) * 1979-06-29 1981-09-15 International Business Machines Corporation Improved solder interconnection between a semiconductor device and a supporting substrate
JPS57113235A (en) * 1980-12-29 1982-07-14 Nec Corp Semiconductor device
WO1982003727A1 (en) * 1981-04-21 1982-10-28 Seiichiro Aigoo Method of making a semiconductor device having a projecting,plated electrode
JPS593953A (ja) * 1982-06-29 1984-01-10 Fujitsu Ltd 半導体装置の製造方法
US4463059A (en) * 1982-06-30 1984-07-31 International Business Machines Corporation Layered metal film structures for LSI chip carriers adapted for solder bonding and wire bonding
JPS59198746A (ja) * 1983-04-25 1984-11-10 Fujitsu Ltd 半導体装置
JPS60154631A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 半導体装置
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
JPS61199645A (ja) * 1985-03-01 1986-09-04 Mitsubishi Electric Corp ワイヤボンデイング用ボ−ルの形成方法
US4742014A (en) * 1985-05-10 1988-05-03 Texas Instruments Incorporated Method of making metal contacts and interconnections for VLSI devices with copper as a primary conductor
JPS62150730A (ja) * 1985-12-24 1987-07-04 Mitsubishi Electric Corp 半導体装置の評価方法
JPS62206857A (ja) * 1986-03-07 1987-09-11 Oki Electric Ind Co Ltd 突起状電極の形成方法
JPS62249436A (ja) * 1986-04-23 1987-10-30 Hitachi Ltd 半導体装置
JPS63148646A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
JPH01201933A (ja) * 1988-02-08 1989-08-14 Mitsubishi Electric Corp ワイヤボンディング方法及びその装置
JPH01201934A (ja) * 1988-02-08 1989-08-14 Mitsubishi Electric Corp ワイヤボンディング方法及びキャピラリチップ

Also Published As

Publication number Publication date
KR920006264B1 (ko) 1992-08-01
KR900002447A (ko) 1990-02-28
JPH01143332A (ja) 1989-06-05
US5003373A (en) 1991-03-26

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