JPS59198746A - 半導体装置 - Google Patents

半導体装置

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Publication number
JPS59198746A
JPS59198746A JP58073469A JP7346983A JPS59198746A JP S59198746 A JPS59198746 A JP S59198746A JP 58073469 A JP58073469 A JP 58073469A JP 7346983 A JP7346983 A JP 7346983A JP S59198746 A JPS59198746 A JP S59198746A
Authority
JP
Japan
Prior art keywords
film
aluminum
wiring layer
pattern
bonding pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58073469A
Other languages
English (en)
Inventor
Shinji Sugaya
慎二 菅谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58073469A priority Critical patent/JPS59198746A/ja
Publication of JPS59198746A publication Critical patent/JPS59198746A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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    • H01L2924/01—Chemical elements
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （ａｌ　　発明の技術分野 本発明は半導体装置のうち、特に半導体チップ面に設け
る導電配線層の構成に関する。
（ｂ）従来技術と問題点 周知のように、半導体集積回路（ＩＣ）においては半導
体チップに半導体素子が多数形成されて、チップ面上に
これらを相互に接続するための導電配線層と、外部導出
用のボンディングワイヤを接着するポンディングパッド
部とが設けられている。
このような配線層およびポンディングパッド部の導電材
料としてはアルミニウム（ＡＩ）あるいはアルミニウム
シリコン（ＡＩ−３ｔ）が最も良く使用されており、そ
れは電気伝導度が比較的良くて且つ安価に得られるため
である。また、アルミニウムシリコンはシリコン含有量
が１％前後で、これはシリコン基板や二酸化シリコン（
Ｓｉ０２　）　ｌ１ｊｔ’との接着力を強くするための
ものである。
一方、ＩＣはＬＳＩ、ＶＬＳＩと高集積化されてきてお
り、それに伴って配線層も設計上から許容限度の近くま
で細くした配線パターンが形成されて、高密度化されて
いる。従って、配線層に若干の欠陥があればその部分で
マイグレーション（粒子移動）を起こして断線する可能
性が著しく増加してきた。
ところで、導電配線材料としてアルミニウムに１１（（
：ｕ）を１〜５％程度含ませたアルミニウム銅合金を利
用する方法が知られており、アルミニウム銅合金はアル
ミニウム、アルミニウムシリコンより優れた電気伝導性
をもっているから、アルミニウム銅合金を用いると伝導
性が良くなって欠陥部分からの断線も減少するメリット
がある。しかし、アルミニウム銅合金膜でポンディング
パッド部を形成すると、硬度が高くなるためにポンディ
ングワイヤ（アルミニウム線または金線）とのポンディ
ングによる接着強度が弱くなって、その部分で断線しや
すい問題が起きる。
（Ｃ）発明の目的 本発明はこのような矛盾した問題点を取り除いた配線構
造を有する半導体装置を提案するものである。
（ｄｌ　　発明の構成 その目的は、半導体チップ上に設けるポンディングパッ
ト部の導電膜をアルミニウム膜あるいはアルミニウムシ
リコン膜とし、素子間の接続および素子とポンディング
バンド部との接続をおこなう導電配線層をアルミニウム
銅合金膜とした半導体装置によって達成される。
（ｅｌ　　発明の実施例 以下１図面を参照して実施例によって詳細に説明する。
第１図は本発明にかかる半導体チップの部分平面図を示
しており、１はアルミニウム膜あるいはアルミニウムシ
リコン膜からなるボンディングバンド部、２はアルミニ
ウム銅合金膜からなる配線Ｎ（導電配線層）、３はポン
ディングしたアルミニウムワイヤである。また、第２図
はその部分断面図を示し、４はシリコン基板、５ば５ｉ
０２膜（絶縁膜）である。
従来は、例えばアルミニウムシリコン膜でポンディング
パッド部と配線層とをすべて形成していたが、上記した
ような本発明にかかる構造に構成すると、ボンディング
バンド部１には柔らかいアルミニウム膜あるいはアルミ
ニウムシリコン膜が形成されていて、アルミニウムワイ
ヤ３と接着するため接着力が強固で、ワイヤの剥れはな
い。且つ、配線層２はアルミニウム銅合金膜でパターン
ニングされており、多少の欠陥ではマイグレーシヨンを
起こさず断線することがなくなる。従ってＩＣは長寿命
化されて、信頼性が著しく向上することになる。
次に、かような構造の半導体装置の製造方法を説明する
。第３図ないし第９図はその工程順断面図で、第３図に
示すようにシリコン基板４の５ｉＱ２膜５上にスパッタ
法または蒸着法で膜厚１μｍのアルミニウムシリコン膜
６を被着する。次いで、第４図に示すようにポンディン
グパッド部１を被覆するレジスト膜パターン７を形成し
た後、第５図に示すようにリアクティブイオンエツチン
グによって露出したアルミニウムシリコン膜６を除去し
て、ポンディングパッド部工のみアルミニウムシリコン
膜６を残存させる。
次いで、第６図に示すようにレジスト膜パターン７の上
からスパッタ法または蒸着法で膜厚１μｍのアルミニウ
ム銅合金膜８を被着する。次いで、第７図に示すように
レジスト膜パターン７を／８解除去して、同時にレジス
ト膜パターン上のアルミニウム銅合金膜８をリフトオフ
によって除去する。次いで、第８図に示すようにポンデ
ィングパッド部１を含む配線層２をマスクするレジスト
膜パターン９を形成した後、露出部をエツチングして第
９図に示すようなポンディングパッド部１と配線層２と
をパターンニングする。このようにすれば、本発明にか
かる半導体装置の配線構造が完成される。
尚、かような製造法に代わり、予めアルミニウム銅合金
膜でポンディングパッド部を含む配線層パターンを形成
し、次いでボンディングバンド部のみアルミニウムシリ
コン膜パターンを積み重ねる方法が想定される。然し、
その方法はパターンユング後の配線層の導電性回復のた
めの低温熱処理によってホンディングバンド部表面にも
銅が混入されることになり、硬度が上るから従来と同様
にワイヤの剥れが起きる。従って、上記のような製造方
法を採ることが必要である。
（ｆｌ　　発明の効果 以上の説明から明らかなように、本発明によれば断線の
恐れが減少した導電配線層が得られ、且つボンデングワ
イヤの剥れの心配もなくなるから、ＩＣの信頼性は極め
て向上するものである。
【図面の簡単な説明】
第１図は本発明にかかる半導体チ・ノブの部分平面図、
第２図はその部分断面図、第３図〜第９図は本発明の製
造工程順断面図である。 図中、１はポンデイングパ・ンド部、　　２Ｌよ西己李
泉層（導電配線層）、３はアルミニウム銅イ−？、　　
４４よシリコン基板、５は５ｉ０２膜、６はアルミニウ
ムシリコン膜、７，９はレジスト膜ノ々クーン、８（ま
アルミニウム銅合金膜を示してしする。 第１図 第３図 第５図 第６図 第７図 第８図 第９図

Claims (1)

    【特許請求の範囲】
  1. 半導体チ・７プ上に設けるポンディングパッド部の導電
    膜をアルミニウム膜あるいはアルミニウムシリコン膜と
    し、素子間の接続および素子とポンディングパッド部と
    の接続をおこなう導電配線層をアルミニウム銅合金膜と
    したことを特徴とす葛半導体装置。
JP58073469A 1983-04-25 1983-04-25 半導体装置 Pending JPS59198746A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58073469A JPS59198746A (ja) 1983-04-25 1983-04-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58073469A JPS59198746A (ja) 1983-04-25 1983-04-25 半導体装置

Publications (1)

Publication Number Publication Date
JPS59198746A true JPS59198746A (ja) 1984-11-10

Family

ID=13519159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58073469A Pending JPS59198746A (ja) 1983-04-25 1983-04-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS59198746A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003373A (en) * 1987-11-30 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Structure of electrode junction for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003373A (en) * 1987-11-30 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Structure of electrode junction for semiconductor device

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