JP5943065B2 - 接合方法、電子装置の製造方法、および電子部品 - Google Patents
接合方法、電子装置の製造方法、および電子部品 Download PDFInfo
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- JP5943065B2 JP5943065B2 JP2014503720A JP2014503720A JP5943065B2 JP 5943065 B2 JP5943065 B2 JP 5943065B2 JP 2014503720 A JP2014503720 A JP 2014503720A JP 2014503720 A JP2014503720 A JP 2014503720A JP 5943065 B2 JP5943065 B2 JP 5943065B2
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- metal
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- bonding
- low melting
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K1/008—Soldering within a furnace
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Description
ところで、従来から広く用いられてきたSn−Pb系はんだにおいては、高温系はんだとして、例えばPbリッチのPb−5Sn(融点:314〜310℃)、Pb−10Sn(融点:302〜275℃)などを用いて330〜350℃の温度ではんだ付けし、その後、例えば、低温系はんだのSn−37Pb共晶(183℃)などを用いて、上記の高温系はんだの融点以下の温度ではんだ付けすることにより、先のはんだ付けに用いた高温系はんだを溶融させることなく、はんだ付けによる接続を行う温度階層接続の方法が広く適用されている。
また、この特許文献1には、はんだペーストを用いた接合方法や、電子機器の製造方法が開示されている。
第1金属を有する第1金属部材と、第2金属を有する第2金属部材とを、前記第1金属および/または前記第2金属よりも融点の低い低融点金属を主たる成分とする接合材料を用いて接合するための接合方法であって、
前記接合材料を構成する前記低融点金属が、SnまたはSnを含む合金であり、
前記第1金属および前記第2金属の少なくとも一方が、Alを5〜30重量%の範囲で含有するCu−Al合金を主成分とするものであり、かつ、
前記第1金属部材と第2金属部材との間に前記接合材料を配置した状態で、前記接合材料を構成する前記低融点金属が溶融する温度で熱処理することにより、前記接合材料を構成する低融点金属と、前記第1金属および/または前記第2金属を構成する前記Cu−Al合金との反応により生成する金属間化合物を含む接合部を介して、前記第1金属部材と前記第2金属部材とを接合する熱処理工程を備えていること
を特徴としている。
第1金属を有する第1金属部材と、第2金属を有する第2金属部材とを備え、前記第1金属部材と前記第2金属部材とが接合された構造を有する電子装置の製造方法であって、
前記第1金属部材と、前記第2金属部材とを、上記本発明の接合方法により接合する工程を備えていること
を特徴としている。
SnまたはSnを含む合金からなる低融点金属を含む接合材料による接合に供される電極を備えた電子部品であって、
前記接合材料に接する前記電極が、Alを5〜30重量%の範囲で含有するCu−Al合金を有していること
を特徴としている。
1)第1金属および第2金属が、互いに接合させるべき第1金属部材と第2金属部材を構成する金属材料そのものであって、そのうちの少なくとも一方がAlを5〜30重量%の範囲で含有するCu−Al合金であり、低融点金属がソルダペーストや板状はんだなどの構成材料として、第1金属部材と第2金属部材の間に供給されている態様や、
2)第1金属および第2金属が、互いに接合させようとしている第1金属部材(電極本体)と第2金属部材(電極本体)の表面に形成されためっき膜を構成する金属材料であって、そのうちの少なくとも一方がAlを5〜30重量%の範囲で含有するCu−Al合金であり、低融点金属がソルダペーストや板状はんだなどの構成材料として、めっき膜を備えた第1金属部材と第2金属部材の表面間に供給されている態様
などが示される。
[(第1金属+第2金属)/{低融点金属+(第1金属+第2金属)}]×100≧30(体積%)…… (1)
<実施形態1>
また、比較のため、表1の試料番号11〜13に示すように、第1金属部材および第2金属部材としてCu(試料番号11)、Cu−10Zn(試料番号12)、Cu−10Ge(試料番号13)からなるものを用意した。
まず、図1(a)に示すように、第1金属部材11a、第2金属部材11bの間に板状に成形された接合材料10を位置させる。
なお、本発明の接合方法によれば、接合材料中に、Cu−Al−Sn金属間化合物が分散して存在することが確認されている。
上述のようにして得た接合体を試料として、以下の方法で特性を測定し、評価した。
接合強度については、得られた接合体のシアー強度を、ボンディングテスタを用いて測定し、評価した。
シアー強度の測定は、横押し速度:0.1mm・s-1、室温および260℃の条件下で行った。
そして、シアー強度が20Nmm-2以上のものを◎(優)、2Nmm-2以下のものを×(不可)と評価した。
表1に、各試料について調べた接合強度(室温、260℃)と評価結果を併せて示す。
リフロー後に凝固した、金属間化合物を含む接合材料(反応生成物)を約7mg切り取り、測定温度30℃〜300℃、昇温速度5℃/min、N2雰囲気、リファレンスAl2O3の条件で示差走査熱量測定(DSC測定)を行った。得られたDSCチャートの低融点金属成分の溶融温度における溶融吸熱ピークの吸熱量から、残留した低融点金属成分量を定量化し、残留低融点金属含有率(体積%)を求めた。そして、残留低融点金属含有率が0〜50体積%の場合を◎(優)、50体積%より大きい場合を×(不可)と評価した。
表1に、残留低融点金属含有率と評価結果を併せて示す。
得られた接合体をエポキシ樹脂で封止して相対湿度85%の環境に放置し、ピーク温度260℃のリフロー条件で加熱して、接合材料が再溶融して流れ出す、流れ出し不良の発生割合を調べた。そして、その結果から流れ出し不良発生率を求め、評価した。
接合材料の流れ出し不良率が0〜50%の場合を◎(優)、50%より大きい場合を×(不可)と評価した。
表1に、流れ出し不良発生率と評価結果を併せて示す。
得られた接合体(試料)を、−40℃/85℃のそれぞれの温度条件で各30分間保持するサイクルを1000回行った後の各試料について、クラック発生状態を観察した。そして、クラック発生の有無を評価した。
表1に、熱衝撃試験後のクラック発生の有無、接合強度を併せて示す。なお、クラックの発生については、それ自体が問題というわけではなく、接合強度を低下させる要因となるため、評価している。
表1に示すように、室温における接合強度については、試料番号1〜10の本発明の要件を備えた実施例の試料および試料番号11〜13の本発明の要件を備えていない比較例の試料のいずれもが、20Nmm-2以上の接合強度を示し、実用強度を備えていることが確認された。
これに対し、試料番号1〜10の実施例の試料では、上述のようなクラックの発生は認められなかった。
<実施形態2>
第1金属部材および第2金属部材として、表2の試料番号14〜23に示す、Cu−10Cr合金からなるものを用いたことを除いて、上記実施形態1の場合と同様の方法、条件で、第1金属からなる第1金属部材と、第2金属からなる第2金属部材とを、第1金属および第2金属よりも融点の低い低融点金属(SnまたはSnを含む合金)を主たる成分とする接合材料を用いて接合した。
低融点金属や、第1金属および第2金属の組成、特性の評価結果などを表2に併せて示す。なお、表2には、実施形態1で作製した比較例の試料と同一の試料(試料番号11〜13の試料)についての組成、特性の評価結果などを併せて示す。
11a 第1金属部材(第1金属)
11b 第2金属部材(第2金属)
12 金属間化合物
Claims (3)
- 第1金属を有する第1金属部材と、第2金属を有する第2金属部材とを、前記第1金属および/または前記第2金属よりも融点の低い低融点金属を主たる成分とする接合材料を用いて接合するための接合方法であって、
前記接合材料を構成する前記低融点金属が、SnまたはSnを含む合金であり、
前記第1金属および前記第2金属の少なくとも一方が、Alを5〜30重量%の範囲で含有するCu−Al合金を主成分とするものであり、かつ、
前記第1金属部材と第2金属部材との間に前記接合材料を配置した状態で、前記接合材料を構成する前記低融点金属が溶融する温度で熱処理することにより、前記接合材料を構成する低融点金属と、前記第1金属および/または前記第2金属を構成する前記Cu−Al合金との反応により生成する金属間化合物を含む接合部を介して、前記第1金属部材と前記第2金属部材とを接合する熱処理工程を備えていること
を特徴とする接合方法。 - 第1金属を有する第1金属部材と、第2金属を有する第2金属部材とを備え、前記第1金属部材と前記第2金属部材とが接合された構造を有する電子装置の製造方法であって、
前記第1金属部材と、前記第2金属部材とを、請求項1記載の接合方法により接合する工程を備えていること
を特徴とする電子装置の製造方法。 - SnまたはSnを含む合金からなる低融点金属を含む接合材料による接合に供される電極を備えた電子部品であって、
前記接合材料に接する前記電極が、Alを5〜30重量%の範囲で含有するCu−Al合金を有していること
を特徴とする電子部品。
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