JP5427745B2 - パワー半導体モジュール及びその製造方法 - Google Patents
パワー半導体モジュール及びその製造方法 Download PDFInfo
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- JP5427745B2 JP5427745B2 JP2010220252A JP2010220252A JP5427745B2 JP 5427745 B2 JP5427745 B2 JP 5427745B2 JP 2010220252 A JP2010220252 A JP 2010220252A JP 2010220252 A JP2010220252 A JP 2010220252A JP 5427745 B2 JP5427745 B2 JP 5427745B2
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- power semiconductor
- conductor plate
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- semiconductor element
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Description
160 金属接合部
315,318 導体板
315c,315e,315g,318c,318e,318g 導体板表面
315d,315f,318d,318f 第1突出面
315h,315i,318h,318i 第1突出部
318j,318k 第2突出部
322a,322b,352a,352b 第2突出面
327 ワイヤ
328 IGBT
328a コレクタ電極
328b エミッタ電極
328c ゲート電極
331 圧痕
S1,S2,S3,S4 辺
F1,F2,F3,F4,F5 引き抜き面
Claims (5)
- 一方の主面に複数の制御電極を形成したパワー半導体素子と、
前記パワー半導体素子の前記一方の主面と第1はんだ材を介して接合される第1導体板と、
前記パワー半導体素子の他方の主面と第2はんだ材を介して接合される第2導体板と、を備え、
前記第1導体板は、当該第1導体板の主面から突出して上面に第1突出面を有する第1突出部を形成し、
前記第1導体板の前記第1突出面には、前記パワー半導体素子の前記一方の主面と対向する第2突出面を有する第2突出部が形成され、
前記第1はんだ材は、前記パワー半導体素子と前記第1導体板の間であって、前記複数の制御電極を避けて介装され、
さらに前記パワー半導体素子の前記一方の主面の垂直方向から投影した場合に、
前記第2突出部は、前記第2突出面の所定辺の投影部が前記第1導体板と前記第1突出部との間に形成される段差部の投影部と重なるように形成され、
前記パワー半導体素子の前記複数の制御電極は、前記第2突出面の前記所定辺に沿うように形成されるパワー半導体モジュール。 - 請求項1に記載されたパワー半導体モジュールであって、
前記パワー半導体素子は、前記パワー半導体素子の前記制御電極が前記第1突出部を形成していない前記第1導体板の表面と対向するとともに前記第2突出面の前記所定辺に沿うように配置されるパワー半導体モジュール。 - 請求項2に記載されたパワー半導体モジュールであって、
前記第1突出部を形成していない前記第1導体板の表面は、前記第2突出面に対して前記第1突出面より遠ざけて形成されるパワー半導体モジュール。 - パワー半導体素子の一方の主面と対向する第1導体板と前記パワー半導体素子の他方の主面と対向する第2導体板を有するパワー半導体モジュールの製造方法であって、
前記第1導体板の一方の面に第1突出面を有する第1突出部を形成する場合に、当該第1突出面の向かい合った所定の2辺が前記第1導体板の向かい合った所定の2辺とそれぞれ重なるように、引き抜きにより形成する第1工程と、
前記第1突出面に形成されるとともに第2突出面を有する第2突出部を形成する場合に、前記第1突出面の一部をプレスすることにより前記第2突出面を形成させる第2工程と、を有するパワー半導体モジュールの製造方法。 - 請求項4に記載のパワー半導体モジュールの製造方法であって、
前記第1工程は、はんだ材と接合される金属メッキを前記第1突出面に塗布する工程を含むパワー半導体モジュールの製造方法。
Priority Applications (5)
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JP2010220252A JP5427745B2 (ja) | 2010-09-30 | 2010-09-30 | パワー半導体モジュール及びその製造方法 |
EP11828710.1A EP2624297B1 (en) | 2010-09-30 | 2011-09-05 | Power semiconductor module and method for manufacturing same |
CN201180041186.XA CN103081104B (zh) | 2010-09-30 | 2011-09-05 | 功率半导体模块及其制造方法 |
PCT/JP2011/070115 WO2012043149A1 (ja) | 2010-09-30 | 2011-09-05 | パワー半導体モジュール及びその製造方法 |
US13/818,490 US8847374B2 (en) | 2010-09-30 | 2011-09-05 | Power semiconductor module and manufacturing method thereof |
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JP2010220252A JP5427745B2 (ja) | 2010-09-30 | 2010-09-30 | パワー半導体モジュール及びその製造方法 |
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US (1) | US8847374B2 (ja) |
EP (1) | EP2624297B1 (ja) |
JP (1) | JP5427745B2 (ja) |
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JP5557585B2 (ja) * | 2010-04-26 | 2014-07-23 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
JP5520889B2 (ja) * | 2011-06-24 | 2014-06-11 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びそれを用いた電力変換装置 |
WO2013132953A1 (ja) * | 2012-03-05 | 2013-09-12 | 株式会社村田製作所 | 接合方法、電子装置の製造方法、および電子部品 |
JP5941787B2 (ja) * | 2012-08-09 | 2016-06-29 | 日立オートモティブシステムズ株式会社 | パワーモジュールおよびパワーモジュールの製造方法 |
CN104603937B (zh) * | 2012-09-07 | 2018-03-20 | 日立汽车系统株式会社 | 半导体装置及其制造方法 |
CN104247012B (zh) * | 2012-10-01 | 2017-08-25 | 富士电机株式会社 | 半导体装置及其制造方法 |
EP2804209A1 (en) * | 2013-05-17 | 2014-11-19 | ABB Technology AG | Moulded electronics module |
US10080313B2 (en) * | 2014-01-27 | 2018-09-18 | Hitachi, Ltd. | Power module and method for manufacturing the same |
JP2015144216A (ja) | 2014-01-31 | 2015-08-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
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JP3525832B2 (ja) | 1999-11-24 | 2004-05-10 | 株式会社デンソー | 半導体装置 |
US6693350B2 (en) * | 1999-11-24 | 2004-02-17 | Denso Corporation | Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure |
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JP4702196B2 (ja) * | 2005-09-12 | 2011-06-15 | 株式会社デンソー | 半導体装置 |
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