JP5378293B2 - パワーモジュール及びそれを用いた電力変換装置 - Google Patents
パワーモジュール及びそれを用いた電力変換装置 Download PDFInfo
- Publication number
- JP5378293B2 JP5378293B2 JP2010097482A JP2010097482A JP5378293B2 JP 5378293 B2 JP5378293 B2 JP 5378293B2 JP 2010097482 A JP2010097482 A JP 2010097482A JP 2010097482 A JP2010097482 A JP 2010097482A JP 5378293 B2 JP5378293 B2 JP 5378293B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor plate
- semiconductor chip
- module
- power module
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
304 モジュールケース
304A 湾曲部
304B フランジ
305 フィン
306 挿入口
307 放熱ベース
315,316,318,319 導体板
315B 直流負極端子
319B 直流正極端子
321 交流端子
323,324 露出面
324R 露出部
325L,325U 信号端子
333 絶縁シート
337 第一封止樹脂表面
338 シート圧着面
340 剥離部
348 第一封止樹脂
351 第二封止樹脂
600 補助モールド体
700 温度センスダイオード
Claims (7)
- 直流電流を交流電流に変換するための半導体チップと、
前記半導体チップの一方の電極面と対向し、かつ当該半導体チップと電気的に接続される第1導体板と、
前記半導体チップの他方の電極面と対向し、かつ当該半導体チップと電気的に接続される第2導体板と、
前記半導体チップの一方の電極面側に配置された温度検知素子と、
前記半導体チップの配置側とは反対側の前記第1導体板の面及び前記第2導体板の面を露出した状態で、前記半導体チップと前記第1導体板と前記第2導体板と前記温度検知素子を封止する樹脂封止材と、
第1絶縁部材を挟んで、前記第1導体板と対向して配置される第1放熱部材と、
第2絶縁部材を挟んで、前記第2導体板と対向して配置される第2放熱部材と、を備え、
前記第1導体板の前記樹脂封止材からの露出面は、前記第2導体板の前記樹脂封止材からの露出面よりも小さいことを特徴とするパワーモジュール。 - 請求項1記載のパワーモジュールであって、
前記第1絶縁部材及び前記第2絶縁部材は、それらの厚さが15%以内の寸法誤差を有する樹脂性の絶縁シートであり、
前記第2導体板の前記樹脂封止材からの露出面の表面積は、前記第1導体板の前記樹脂封止材からの露出面の表面積に対して1.15倍よりも大きいことを特徴とするパワーモジュール。 - 直流電流を交流電流に変換するための半導体チップと、
前記半導体チップの一方の電極面と対向し、かつ当該半導体チップと電気的に接続される第1導体板と、
前記半導体チップの他方の電極面と対向し、かつ当該半導体チップと電気的に接続される第2導体板と、
前記半導体チップの一方の電極面側に配置された温度検知素子と、
前記半導体チップの配置側とは反対側の前記第1導体板の面及び前記第2導体板の面を露出した状態で、前記半導体チップと前記第1導体板と前記第2導体板と前記温度検知素子を封止する樹脂封止材と、
第1絶縁部材を挟んで、前記第1導体板と対向して配置される第1放熱部材と、
第2絶縁部材を挟んで、前記第2導体板と対向して配置される第2放熱部材と、を備え、
前記第2導体板の前記樹脂封止材からの露出面は、前記第1導体板の前記樹脂封止材からの露出面よりも粗くなるように粗化処理が成されていることを特徴とするパワーモジュール。 - 直流電流を交流電流に変換するための半導体チップと、
前記半導体チップの一方の電極面と対向し、かつ当該半導体チップと電気的に接続される第1導体板と、
前記半導体チップの他方の電極面と対向し、かつ当該半導体チップと電気的に接続される第2導体板と、
前記半導体チップの一方の電極面側に配置された温度検知素子と、
前記半導体チップの配置側とは反対側の前記第1導体板の面及び前記第2導体板の面を露出した状態で、前記半導体チップと前記第1導体板と前記第2導体板と前記温度検知素子を封止する樹脂封止材と、
第1絶縁部材を挟んで、前記第1導体板と対向して配置される第1放熱部材と、
第2絶縁部材を挟んで、前記第2導体板と対向して配置される第2放熱部材と、を備え、
前記第2導体板の前記樹脂封止材からの露出面は、当該露出面の表面積が前記第1導体板の前記樹脂封止材からの露出面の表面積よりも大きくするための凹部又は凸部を有するパワーモジュール。 - 直流電流を交流電流に変換するための半導体チップと、
前記半導体チップの一方の電極面と対向し、かつ当該半導体チップと電気的に接続される第1導体板と、
前記半導体チップの他方の電極面と対向し、かつ当該半導体チップと電気的に接続される第2導体板と、
前記半導体チップの一方の電極面側に配置された温度検知素子と、
前記半導体チップの配置側とは反対側の前記第1導体板の面及び前記第2導体板の面を露出した状態で、前記半導体チップと前記第1導体板と前記第2導体板と前記温度検知素子を封止する樹脂封止材と、
第1絶縁部材を挟んで、前記第1導体板と対向して配置される第1放熱部材と、
第2絶縁部材を挟んで、前記第2導体板と対向して配置される第2放熱部材と、を備え、
前記第2放熱部材は、前記第2絶縁部材と対向する面に、当該対向面の表面積が前記第1導体板の前記第1絶縁部材との対向面の表面積よりも大きくするための凹部又は凸部を有するパワーモジュール。 - 請求項1ないし5記載のいずれかのパワーモジュールであって、
前記第1放熱部材と前記第2放熱部材を接続し、かつ当該第1放熱部材と当該第2放熱部材と一体に形成された中間部材を、備え、
前記第1放熱部材と前記第2放熱部材と前記中間部材は金属材料で形成されるパワーモジュール。 - 請求項1ないし6記載のいずれかのパワーモジュールであって、
前記温度検知素子は、前記半導体チップの一方の電極面と前記第1絶縁部材との間に配置されるパワーモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010097482A JP5378293B2 (ja) | 2010-04-21 | 2010-04-21 | パワーモジュール及びそれを用いた電力変換装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010097482A JP5378293B2 (ja) | 2010-04-21 | 2010-04-21 | パワーモジュール及びそれを用いた電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011229298A JP2011229298A (ja) | 2011-11-10 |
JP5378293B2 true JP5378293B2 (ja) | 2013-12-25 |
Family
ID=45044039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010097482A Active JP5378293B2 (ja) | 2010-04-21 | 2010-04-21 | パワーモジュール及びそれを用いた電力変換装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5378293B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10535577B2 (en) | 2016-05-20 | 2020-01-14 | Denso Corporation | Semiconductor device |
JP7062596B2 (ja) | 2016-03-18 | 2022-05-06 | ソルヴェイ(ソシエテ アノニム) | 水系耐食コーティング組成物 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013258387A (ja) | 2012-05-15 | 2013-12-26 | Rohm Co Ltd | パワーモジュール半導体装置 |
JP5914290B2 (ja) * | 2012-10-15 | 2016-05-11 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP7159609B2 (ja) * | 2018-05-15 | 2022-10-25 | 株式会社デンソー | 半導体装置 |
JP7124693B2 (ja) * | 2018-12-27 | 2022-08-24 | 株式会社デンソー | 電力変換ユニット |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008124430A (ja) * | 2006-10-18 | 2008-05-29 | Hitachi Ltd | パワー半導体モジュール |
JP4436843B2 (ja) * | 2007-02-07 | 2010-03-24 | 株式会社日立製作所 | 電力変換装置 |
-
2010
- 2010-04-21 JP JP2010097482A patent/JP5378293B2/ja active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7062596B2 (ja) | 2016-03-18 | 2022-05-06 | ソルヴェイ(ソシエテ アノニム) | 水系耐食コーティング組成物 |
US10535577B2 (en) | 2016-05-20 | 2020-01-14 | Denso Corporation | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2011229298A (ja) | 2011-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5422466B2 (ja) | 電力変換装置 | |
JP5591396B2 (ja) | 半導体モジュール、および半導体モジュールの製造方法 | |
JP5624875B2 (ja) | 電力変換装置 | |
JP5422468B2 (ja) | 電力変換装置 | |
JP5618595B2 (ja) | パワーモジュール、およびパワーモジュールを備えた電力変換装置 | |
JP5557585B2 (ja) | パワーモジュール | |
JP6072492B2 (ja) | コンデンサモジュール及び電力変換装置 | |
JP5506741B2 (ja) | 電力変換装置 | |
JP5581131B2 (ja) | パワーモジュール及びそれを用いた電力変換装置 | |
JP5455888B2 (ja) | 車両用電力変換装置 | |
JP5634429B2 (ja) | パワー半導体モジュール | |
JP5506749B2 (ja) | 電力変換装置 | |
JP5455887B2 (ja) | 電力変換装置 | |
JP2016182037A (ja) | パワー半導体装置及びそれを用いた電力変換装置 | |
JP5486990B2 (ja) | パワーモジュール及びそれを用いた電力変換装置 | |
JP5378293B2 (ja) | パワーモジュール及びそれを用いた電力変換装置 | |
JP5188530B2 (ja) | パワーモジュール及びそれを用いた電力変換装置 | |
JP5978324B2 (ja) | 電力変換装置 | |
JP5568511B2 (ja) | 電力用変換装置 | |
JP5687786B2 (ja) | 電力変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120801 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120801 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130814 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130827 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130925 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5378293 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |