JPS61199645A - ワイヤボンデイング用ボ−ルの形成方法 - Google Patents

ワイヤボンデイング用ボ−ルの形成方法

Info

Publication number
JPS61199645A
JPS61199645A JP60040624A JP4062485A JPS61199645A JP S61199645 A JPS61199645 A JP S61199645A JP 60040624 A JP60040624 A JP 60040624A JP 4062485 A JP4062485 A JP 4062485A JP S61199645 A JPS61199645 A JP S61199645A
Authority
JP
Japan
Prior art keywords
wire
ball
discharge
tip
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60040624A
Other languages
English (en)
Inventor
Saneyasu Hirota
弘田　実保
Kazumichi Machida
一道 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60040624A priority Critical patent/JPS61199645A/ja
Priority to KR1019860000462A priority patent/KR910005701B1/ko
Priority to US06/824,744 priority patent/US4705204A/en
Priority to GB8602740A priority patent/GB2174032B/en
Priority to DE3645066A priority patent/DE3645066C2/de
Priority to DE19863606224 priority patent/DE3606224A1/de
Publication of JPS61199645A publication Critical patent/JPS61199645A/ja
Priority to KR1019900000620A priority patent/KR900007053B1/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
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    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、ＩＣやトランジスタなどの製造工程におい
て、金属細線を接続するワイヤボンディング方法、特に
ボールボンディング方法に関し、金属細線をボールボン
ディングするためのボールの形成方法に関するものであ
る。
〔従来の技術〕
従来ボンディング用金属細線としては、金線が使用され
ているが、この場合、コストが高くつくこととシリコン
チップ上のＡｊ！電極との接合部の長期信頼性が低いと
う欠点を有するため、金に代えて、銅、アルミニウム、
パラジウム又はそれらの合金からなるワイヤを用いるこ
とが考えられる。
またボンディング工程においては、方向性をなくすため
、細線先端を球状化することが要求され、従来の金線に
おいては、ワイヤ先端と可動電極との間に高電圧を印加
し、放電させることによってワイヤの先端に入熱を与え
、熔融球状化している。この場合、従来の全ての例にお
いて、絶縁破壊の容易さから、電極をプラス、ワイヤ側
をマイナスとしている。
〔発明が解決しようとする問題点〕
ここで、銅、アルミニウムなど、表面に数１０人程度の
自然酸化被膜を有しているワイヤに対して、従来の金線
に対するものと同様の方法でボール形成を行なった場合
の状況を第３図に模式的に示す０図において、１はワイ
ヤ、２は放電電極、３はアーク、１４は電源、５はボン
ディングツールであるキャピラリチップ、１６は電極が
形成され、熱が投与される部分、７はアルゴン等の不活
性ガス雰囲気、１８は溶融履歴を経て形成された部分で
ある。
この方法では、放電時、マイナス極側においては、熱電
子放出がより安定な仕事関数の小さい点、即ち、わずか
な金属酸化膜を求めてその電極領域を広げようとする物
理的性質がある。従って、ワイヤ１がマイナスの場合に
は、第３図（ａ）に示すようにワイヤ１の上方までアー
ク３が形成され、ワイヤ１の表皮部から熱が投与される
。その結果、第３図０１１）に示すよう畝先端に芯、即
ちワイヤ１の未溶融部１ａを残した欠陥ボール１８を発
生しがちである。この欠陥ボール１８は形状的には球状
化していても、その内部に未熔融部１ａを残し、シリコ
ンチップ上への接合の際に不良、即ちシリコンチップの
微小クランク発生などの要因となる。
ただし、従来の金線の場合では、その表面に酸化物を形
成しないので、このような問題は全くなく、放電の容易
さから、専ら上述のごときワイヤをマイナスにして用い
ていた。
この発明は上記のような問題点を解決するためになされ
たもので、ワイヤの先端に、未溶融部を残さず、内部ま
で完全に溶融履歴を受けたボールを形成できるワイヤボ
ンディング用ボールの形成方法を得ることを目的とする
ものである。
〔問題点を解決するための手段〕
この発明に係るワイヤボンディング用ボールの形成方法
は、ワイヤをプラス、放電電極をマイナスとして両者間
に高電圧を印加するようにしたものである。
〔作用〕
この発明においては、ワイヤをプラスとしたことから、
電極領域が広がるという現象は起こらず、放電電極との
距離が最も短いワイヤ先端部にのみ電極が形成されるた
め、ワイヤ先端に集中的に熱が投与され、ワイヤ先端部
が完全溶融されるものである。
〔実施例〕
以下、本発明の実施例を図について説明する。
第１図は本発明の一実施例によるワイヤボンディング用
ボールの形成方法におけるボール形成状況を模式的に示
したものである０図において、６は電極が形成され、熱
が投与される部分、８は溶融履歴を経て形成されたボー
ル部、４は高電圧電源であり、他の部分は従来と同一で
ある。
本実施例の方法では、第１図（ａ）に示すように、アル
ミニウム、銅、パラジウム又はそれらの合金からなるワ
イヤ１をプラス、放電電極２をマイナスにして両者間に
高電圧を印加することによって、ワイヤ１の先端部のみ
に熱が投与され、ワイヤ溶融部分６はワイヤ１先端部の
みに限定され、その溶融部８は完全な球状を保ちながら
、その体積を増加させていく、なお、溶融時に受ける酸
化を防止する目的で、放電領域はアルゴン等の不活性ガ
ス雰囲気７を形成しておくことが必要条件となる。
ここで、直径１５μｍ〜３５μｍの範囲のワイヤ１に対
し、ワイヤ１径の２〜３倍のボール８を安定に形成する
ためには、放電の電流値として３０〜２００ｍＡ、放電
時間として１〜１０　ｍｓｅｃの範囲内で適宜選定する
。第２図には、実験で得られた、φ２５μｍの銅ワイヤ
の適正条件範囲を示す。
以上のような本実施例の方法では、ワイヤをプラス、放
電電極をマイナスにしたので、ワイヤ先端部に集中的に
熱を投与でき、球状を有し、内部が完全熔融したボール
を安定に得ることが可能となり、これにより現在用いら
れている金に代えて銅、アルミニウム等低廉なワイヤを
使用でき、大幅な低コスト化が実現できるとともに、チ
ップ上のアルミ電極との接合部の長期信頼性を向上でき
る。また内部が完全熔融したボールが得られる結果、チ
ップの微小クランク等の不良が発生することもない。
なお、上記実施例では金属ワイヤとしてアルミニウム、
ｍ、パラジウム又はそれらの合金を用いた場合について
述べたが、表面に酸化膜を有する他の金属ワイヤ材質に
対しても同様の効果を奏する。
〔発明の効果〕
以上のように、この発明に係るワイヤボンディング用ボ
ールの形成方法によれば、金属ワイヤをプラス、放電電
極をマイナスとして両者間に高電圧を印加し、金属ワイ
ヤの先端部に集中的に熱を与えるようにしたので、内部
が完全溶融したボールが得られ、これにより金に代えて
、銅、アルミニウムなどのワイヤを使用することが可能
となり、低コスト化及び長期信頼性の向上を図ることが
できる効果がある。
【図面の簡単な説明】
第１図（ａ）はこの発明の一実施例によるワイヤポンデ
ィング用ボールの形成方法のアーク放電時を示す模式図
、第１図〜）はそのボール形成時を示す模式図、第２図
はφ２５μｍの銅ワイヤを用いた場合の放電時間・放電
電流特性図、第３図（ａ）は従来の方法のアーク放電時
を示す模式図、第３図（ｂ）はそのボール形成時を示す
模式図である。 １・・・金属ワイヤ、２・・・放電電極、７・・・不活
性ガス雰囲気、８・・・ボール部。 なお、図中同一符号は同−又は相当部分を示す。

Claims (4)

    【特許請求の範囲】
  1. （１）金属ワイヤをボールボンディングするためのボー
    ルの形成方法であって、金属ワイヤをプラス、放電電極
    をマイナスとして両者間に高電圧を印加し、この金属ワ
    イヤの先端部を放電によって溶融させてボールを形成す
    ることを特徴とするワイヤボンディング用ボールの形成
    方法。
  2. （２）上記金属ワイヤとしてその直径が１５μｍ〜３５
    μｍのアルミニウム、銅、パラジウム又はそれらの合金
    のワイヤを用い、直径が３０μｍ〜１００μｍのボール
    を形成するようにしたことを特徴とする特許請求の範囲
    第１項記載のワイヤボンディング用ボールの形成方法。
  3. （３）上記高電圧印加時の放電の電流値を３０ｍＡ〜２
    ００ｍＡ、放電時間を１ｍｓｅｃ〜１０ｍｓｅｃとした
    ことを特徴とする特許請求の範囲第２項記載のワイヤボ
    ンディング用ボールの形成方法。
  4. （４）上記金属ワイヤの先端の周辺領域にはアルゴン等
    の不活性ガス雰囲気が形成されていることを特徴とする
    特許請求の範囲第１項記載のワイヤボンディング用ボー
    ルの形成方法。
JP60040624A 1985-03-01 1985-03-01 ワイヤボンデイング用ボ−ルの形成方法 Pending JPS61199645A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP60040624A JPS61199645A (ja) 1985-03-01 1985-03-01 ワイヤボンデイング用ボ−ルの形成方法
KR1019860000462A KR910005701B1 (ko) 1985-03-01 1986-01-24 와이어본딩용 볼의 형성방법
US06/824,744 US4705204A (en) 1985-03-01 1986-01-31 Method of ball forming for wire bonding
GB8602740A GB2174032B (en) 1985-03-01 1986-02-04 Ball-type bonding wires for semiconductor devices and method for producing same
DE3645066A DE3645066C2 (ja) 1985-03-01 1986-02-26
DE19863606224 DE3606224A1 (de) 1985-03-01 1986-02-26 Kugeltyp-bond-draehte fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
KR1019900000620A KR900007053B1 (ko) 1985-03-01 1990-01-19 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60040624A JPS61199645A (ja) 1985-03-01 1985-03-01 ワイヤボンデイング用ボ−ルの形成方法

Publications (1)

Publication Number Publication Date
JPS61199645A true JPS61199645A (ja) 1986-09-04

Family

ID=12585689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60040624A Pending JPS61199645A (ja) 1985-03-01 1985-03-01 ワイヤボンデイング用ボ−ルの形成方法

Country Status (1)

Country Link
JP (1) JPS61199645A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641248A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
US5003373A (en) * 1987-11-30 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Structure of electrode junction for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641248A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
US5003373A (en) * 1987-11-30 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Structure of electrode junction for semiconductor device

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