JPS62136832A - ワイヤボンデイング用ボ−ルの形成方法 - Google Patents

ワイヤボンデイング用ボ−ルの形成方法

Info

Publication number
JPS62136832A
JPS62136832A JP60278642A JP27864285A JPS62136832A JP S62136832 A JPS62136832 A JP S62136832A JP 60278642 A JP60278642 A JP 60278642A JP 27864285 A JP27864285 A JP 27864285A JP S62136832 A JPS62136832 A JP S62136832A
Authority
JP
Japan
Prior art keywords
ball
discharge
electrode
discharge electrode
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60278642A
Other languages
English (en)
Inventor
Kazumichi Machida
一道 町田
Saneyasu Hirota
弘田　実保
Masaaki Shimotomai
下斗米　将昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60278642A priority Critical patent/JPS62136832A/ja
Publication of JPS62136832A publication Critical patent/JPS62136832A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212—Aligning
    • H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
    • H01L2224/8218—Translational movements
    • H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
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    • H01L2924/01055—Cesium [Cs]
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    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 【産業上の利用分野〕 この発明は、ＩＣやトランジスタなどの製造工程におい
て、金属ワイヤを接続するワイヤボンディング方法、特
にボールボンディング方法に関し、金属ワイヤをボール
ボンディングするためのボールの形成方法に関するもの
である。
〔従来の技術〕
第２図は従来のこの種の半導体装置におけるワイヤボン
ディング方法を模式的に示したものである０図において
、１は金属ワイヤ、２は半導体チップ、３は半導体チッ
プ２上に形成されたアルミ電極、４は銀めっき等の表面
処理が施された銅合金リード、５はボンディングツール
であるキャピラリチップである。
従来のワイヤボンディング方法では、金属ワイヤ１の先
端をアーク入熱で溶融させ、これを凝固させてボール部
１．ａを形成し、このボール部１ａをアルミ電極３にボ
ールボンディングした後（第２図（ａ）、　（ｂ）参照
）、金属ワイヤ１の他端側をリード４にステッチボンデ
ィングするようにしており（第２図（Ｃ）、　（ｄ）参
照）、又ワイヤ１の接合には主として超音波併用圧着方
式が用いられている。
〔発明が解決しようとする問題点〕
ここでワイヤボンディング、特にボールボンディングを
安定に行なうための方法について考察すると、−ａに次
の条件が要求される。
■　ボール表面に接合を阻害するような厚い酸化膜がつ
いていないこと。
■　真球度が高いこと。
■　ワイヤに対してボールの形状が軸対称であること。
■゛ボール軟らかいこと。
■　ボールの大きさくワイヤ直径の２．５倍程度）がそ
ろっていること。
そして上記■、■、■の条件はワイヤの大熱量に大きく
依存し、従ってアークの安定性を向上できれば、ワイヤ
の大熱量を制御してボールの形状及びサイズを保証でき
、これによりボールボンディングの信頼性を向上できる
ものと期待される。
この発明は、かかる点に鑑み、ボールの形状及びサイズ
の安定性を増大してボンディングの信頼性を向上できる
ワイヤボンディング用ボールの形成方法を提供すること
を目的としている。
〔問題点を解決するための手段〕
そこでこの発明に係るワイヤボンディング用ボールの形
成方法は、金属ワイヤと放電電極との間に高電圧を印加
して金属ワイヤの先端部を放電によって溶融させてボー
ルを形成する際に、放電電極として熱電子放出の容易な
電極を用いるようにしたものである。
〔作用〕
この発明においては、熱電子放出の容易な放電電極を用
いるようにしたことから、金属ワイヤと放電電極との間
にはアークが形成されやすく、これによりアークの安定
性は大幅に向上される。
〔実施例〕
以下、本発明の実施例を図について説明する。
第１図は本発明の一実施例によるワイヤボンディング用
ボールの形成方法を示す。図において、第２図と同一符
号は同図と同一のものを示し、６は交流電源、７はアー
ク、８は熱電子放出の容易な放電電極である。ここでこ
の放電電極８はトリウム入りタングステン、ジルコン入
りタングステン、バリウム入りタングステン、セシウム
入りタングステン等、熱電子放出の容易な材料、あるい
は酸化バリウム被覆タングステン、酸化亜鉛被覆タング
ステン、酸化ストロンチウム被覆タングステン等、熱電
子放出の容易な部材を用いて形成されている。
本実施例の方法においては、従来の方法と同様に、金属
ワイヤ１と放電電極８との間に高電圧を印加する。する
と金属ワイヤ１の先端部と放電電極８との間で放電が起
こってアーク７が形成され、金属ワイヤ７の先端部に熱
が投与されて該先端部が溶融され、その溶融部は球状を
保ちながらその体積を増加させていく。
その際、本方法では、放電電極８として熱電子放出の容
易な電極を用いていることから、金属ワイヤ１の先端部
と放電電極８との間で容易に安定したアーク７が形成さ
れ、形状及びサイズの安定したボールｌａが形成される
。
以上のような本実施例の方法では、熱電子放出の容易な
放電電極を用いるようにしたので、アークの安定性を向
上してワイヤへの大熱量を容易に制御でき、これにより
ボールの形状及びサイズを安定にしてポールボンディン
グの信頼性を大幅に向上できる。
〔発明の効果〕
以上のように、本発明に係るワイヤボンディング用ボー
ルの形成方法によれば、金属ワイヤと放電電極との間に
高電圧を印加して金属ワイヤの先端部を放電によって溶
融させてボールを形成する際に、放電電極として熱電子
放出の容易な電極を用いるようにしたので、アークの安
定性を向上してボールの形状及びサイズの安定性を増大
でき、ボンディングの信頼性を向上できる効果がある。
【図面の簡単な説明】
第１図（ａｌ、　（ｂｌは各々本発明の一実施例による
ワイヤボンディング用ボールの形成方法におけるアーク
放電時及びボール形成後の状態を示す模式図、第２図（
ａ）〜（ｄ）は各々ワイヤボンディング方法を示す模式
図である。 １・・・金属ワイヤ、１ａ・・・ボール、２・・・半導
体チップ、３・・・電極、７・・・アーク、８・・・放
電電極。 なお図中同一符号は同−又は相当部分を示す。

Claims (1)

  1. 【特許請求の範囲】 １）金属ワイヤを半導体チップの電極にボールボンディ
    ングするためのボールの形成方法であって、 金属ワイヤと放電電極との間に高電圧を印加して、この
    金属ワイヤの先端部を放電によって溶融させてボールを
    形成し、 その際、放電電極として熱電子放出の容易な電極を用い
    ることを特徴とするワイヤボンディング用ボールの形成
    方法。
JP60278642A 1985-12-10 1985-12-10 ワイヤボンデイング用ボ−ルの形成方法 Pending JPS62136832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60278642A JPS62136832A (ja) 1985-12-10 1985-12-10 ワイヤボンデイング用ボ−ルの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60278642A JPS62136832A (ja) 1985-12-10 1985-12-10 ワイヤボンデイング用ボ−ルの形成方法

Publications (1)

Publication Number Publication Date
JPS62136832A true JPS62136832A (ja) 1987-06-19

Family

ID=17600120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60278642A Pending JPS62136832A (ja) 1985-12-10 1985-12-10 ワイヤボンデイング用ボ−ルの形成方法

Country Status (1)

Country Link
JP (1) JPS62136832A (ja)

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