JP3928488B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP3928488B2
JP3928488B2 JP2002162594A JP2002162594A JP3928488B2 JP 3928488 B2 JP3928488 B2 JP 3928488B2 JP 2002162594 A JP2002162594 A JP 2002162594A JP 2002162594 A JP2002162594 A JP 2002162594A JP 3928488 B2 JP3928488 B2 JP 3928488B2
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semiconductor device
semiconductor chip
circuit pattern
insulating substrate
bonding
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JP2004014599A (ja
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良成 池田
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Fuji Electric Co Ltd
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Fuji Electric Device Technology Co Ltd
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Description

【０００１】
【発明の属する技術分野】
この発明は、ＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）モジュールなどの半導体装置に関する。
【０００２】
【従来の技術】
ＩＧＢＴモジュールなどの半導体装置のパッケージ構造は図６に示すようなケース構造と呼ばれるものが主流である。ケース構造は、冷却体であるヒートシンク１６、Ｄｉｒｅｃｔ Ｂｏｎｄｉｎｇ Ｃｕｐｐｅｒ基板、アルミナあるいは窒化アルミからなるセラミック基板に銅箔の回路パターンが形成された絶縁基板１５および半導体チップ１１が半田１２で接合され、この一体となったものを樹脂成形したケース１７に接着した構造である。そして、半導体チップ１１、ワイヤ１３、絶縁基板１５を水分、湿気、塵から保護する目的でケース１７内にはゲル１８が充填されている。電気的接続については、半導体チップ１１の表面にワイヤがボンディングされ、半導体チップ１１の裏面が、絶縁基板１５上に形成した図示していない回路パターン銅膜に半田接合されている。
【０００３】
図７は、半導体チップの要部断面図である。この図は１／２セルを示している。半導体チップ１１の表面電極２０側は、半導体基板２１（例えばシリコン）上に、ゲート酸化膜２２、ポリシリコンで形成されたゲート電極２３、層間絶縁膜２４、表面電極膜２５、さらにその上に図示しない保護膜が形成され構成され、この段差形状（セル）が複数回に渡って繰返され半導体チップが構成された段差形状となっている。一方、裏面電極３０側は半田接合を確保するため、Ａｌ層３１、Ｔｉ層３２、Ｎｉ層３３およびＡｕ層３４がベタ膜状態で積層されている。尚、Ａｕ層３４が最表面膜となる。また、図の点線は、ＩＧＢＴセルの場合の半導体基板２１内に形成されるエミッタ領域、ウエル領域、ドリフト領域およびコレクタ領域を示している。
【０００４】
従来の半導体装置では、半導体チップ１１の裏面電極３０が、絶縁基板１５の表面に形成された回路パターンと半田接合され、絶縁基板１５の裏面銅箔が冷却体であるヒートシンク１６に半田接合されている。このため、パワーサイクルなど熱（温度）が変化する信頼性試験においては、構成部材の線膨張係数の違いから生じる熱応力で半田接合部にクラックを生じることがあった。
【０００５】
最近、半導体チップ１１は大型化されてきており、熱応力による半田接合部への歪みは、さらに大きくなってきている。このような状況で接合方法として、半田接合を用いることは、信頼性の低いパワーモジュールの提供につながる可能性がある。また、半導体チップ１１の表面電極と接続するワイヤ１３は、配線抵抗やインダクタンスが大きく、半導体装置の特性が十分に発揮できない場合もある。
【０００６】
【発明が解決しようとする課題】
半田接合を利用した従来の半導体装置では、実使用での熱応力によって半田接合層に歪みを発生し、Ｃｏｆｆｉｎ−Ｍａｎｓｏｎ則（歪みと疲労寿命の関係を示す法則）に従って半田接合層にはクラックが伸長していく（歪みが大きい程、クラックの進展が早く、疲労寿命が短くなる）。
【０００７】
また、半導体チップは大型化され、ワイヤボンディングによる配線方法では半導体装置の性能を十分に生かすことが困難となってきている。
従って、半導体チップの裏面電極を絶縁基板に構成された回路パターンに如何に半田を用いない方法で接合できるか、また、表面電極への安定した電気的接続が如何に確保できるかが課題となる。
【０００８】
この発明の目的は、前記の課題を解決して、半導体チップの裏面と絶縁基板との接合、半導体チップの表面と外部導出導体との接合および絶縁基板と冷却体（ヒートシンク）との接合において、半田を用いない接合とすることで、高性能で高信頼性の半導体装置を提供することにある。
【０００９】
【課題を解決するための手段】
前記の目的を達成するために、半導体チップの裏面に形成した裏面電極と、絶縁基板上に形成した回路パターン導板とを接続した半導体装置において、前記裏面電極と前記回路パターン導板の各表面を同一材料とし、互いの表面を直に接触させて直接金属接合する。
【００１０】
また、半導体チップの表面に形成した表面電極と、導体とを接続した半導体装置において、前記表面電極と前記導体の各表面を同一材料とし、互いの表面を直に接触させて直接金属接合する。
また、回路パターン導板を形成した絶縁基板の裏面に形成した導板と、放熱体を接続した半導体装置において、前記導板と前記放熱体の各表面を同一材料とし、互いの表面を直に接触させて直接金属接合する構成とする。
【００１１】
また、半導体チップの裏面に形成した裏面電極と、絶縁基板上に形成した回路パターン導板とを接続した半導体装置において、前記裏面電極と前記回路パターン導板の各表面を所定の粗さで平坦化し、平坦化した表面を直に接触させて直接金属接合する。
また、半導体チップの表面に形成した表面電極と、導体とを接続した半導体装置において、前記表面電極と前記導体の互いの表面を所定の粗さで平坦化し、平坦化した表面を直に接触させて直接金属接合する。
【００１２】
また、回路パターン導板を形成した絶縁基板の裏面に形成した導板と、放熱体を接続した半導体装置において、前記導板と前記放熱体の互いの表面を所定の粗さで平坦化し、平坦化した表面を直に接触させて直接金属接合する。
また、前記所定の粗さが、１０ｎｍ以下であるとよい。
また、前記の半導体装置の製造方法において、前記所定の粗さとするために、加工面である各表面をＣＭＰ（Ｃｈｅｍｉｃａｌ Ｍｅｃｈａｎｉｃａｌ Ｐｏｌｉｓｈｉｎｇ）処理と酸化しない不活性雰囲気での活性化による清浄処理とを行う製造方法とする。
【００１３】
また、前記の半導体装置の製造方法において、互いの前記表面を加圧し、超音波振動もしくは加熱の少なくとも一方を実施することで直接金属接合するとよい。
前記したように、互いに接合する部材表面の材質を同一にし、加圧しながら、超音波振動を与えることで、直接金属接合ができる。加熱するとさらに直接金属接合がし易くなる。また、互いに接合する部材の表面の粗さをナノオーダの平坦面とすることで、分子間力が働き、加圧もしくは加熱しながら超音波振動を加えることで直接金属接合ができる。
【００１４】
【発明の実施の形態】
図１は、この発明の第１実施例の半導体装置の要部断面図である。この図は図６の半導体チップ１１と絶縁基板１５とヒートシンク１６に相当する図であり、ケース１７、端子１４は省略されている。また、図６と同一箇所には同一の符号を記した。
【００１５】
半導体チップ１１の裏面電極３０（図７参照）の最表面膜４１ａは、Ｎｉ層、Ｃｕ層、Ａｌ層あるいは貴金属層（Ａｕ層）を、蒸着またはスパッタあるいはメッキにより成膜して形成する。一方、半導体チップ１１を接合する絶縁基板１５上の回路パターン１５ａの最表面膜４１ｂも、半導体チップ１１の裏面電極３０の最表面膜４１ａと同一材料であるＮｉ層、Ｃｕ層、Ａｌ層あるいは貴金属層（Ａｕ層など）を蒸着またはスパッタあるいはメッキによって成膜する。そして、最表面膜４１ａ、４１ｂで被覆された半導体チップの裏面電極３０および絶縁基板１５上に構成された回路パターン１５ａを互いに向き合せに配置し、加圧しながら超音波振動をさせ、場合によっては加熱することで、最表面（界面）に形成された同一金属が互いに拡散し、半田レスで直接金属接合する。超音波振動で直接金属接合させる条件は、例えば、半導体チップの大きさが５ｍｍ□〜１０ｍｍ□の場合、超音波振動周波数は２０ｋＨｚ〜４０ｋＨｚ程度、加圧力は１０ｋｇ（９．８×１０Ｎ）〜４０ｋｇ（９．８×４０Ｎ）程度、時間は０．３ｓｅｃ〜０．６ｓｅｃ程度である。半導体チップ１１の面積が大きくなった場合には、チップサイズに合わせて前記加圧力を増大する。また、加熱する場合の温度は１５０℃程度以下でよい。また、最表面４１ａ、４１ｂの粗さは小さい程好ましいが、μｍオーダー以下であれば構わない。
【００１６】
尚、半導体チップ１１と回路パターン１５ａとの線膨張係数の差による熱応力を緩和するために、回路パターン１５ａには、焼き鈍しあるいは半導体チップ１１を囲むように回路パターン１５ａに溝４２を設ける。
また、前記の直接金属接合とは、接合する金属間に何も介在させず、接合する金属同志を直接接触させて接合することをいう。
【００１７】
図２は、この発明の第２実施例の半導体装置の要部断面図である。半導体チップ１１の裏面電極３０はＳｉ地またはＴｉ膜、Ｃｒ膜を成膜する。次に、半導体チップ１１の裏面電極３０と絶縁基板１５の表面に構成された回路パターン１５ａをＣＭＰ（化学的機械的研磨）装置などによって表面粗さをそれぞれ１００ｎｍ以下に平坦加工する。さらに、ドライエッチング装置を用いて、加工したそれぞれの平坦面を酸化しないように不活性雰囲気（Ｎ2 減圧雰囲気や真空雰囲気）内でＡｒなどをスパッタして活性化し、清浄化して、面粗さを１０ｎｍ以下の平坦面とし、半導体チップ１１の裏面電極３０と絶縁基板上１５の回路パターン１５ａとを重ね合せて加圧し直接金属接合する。平坦面の状態によっては、熱加圧するか、あるいは加圧しながら超音波振動させることで、原子（分子）間力によって半田レスで直接金属接合が行われる。尚、半導体チップ１１と回路パターン１５ａとの線膨張係数の差による熱応力を緩和するために、回路パターン１５ａには、焼き鈍しあるいは半導体チップ１１を囲むように回路パターン１５ａに溝４２を設ける。また、裏面電極３０と回路パターン１５ａの最表面は同一金属であると好ましい。
【００１８】
図３は、この発明の第１参考例の半導体装置の要部断面図である。半導体チップ１１の表面電極膜２５と直接金属接合させるリードフレーム４３の先端部４４を凸状に加工し、リードフレーム４３がガードリング部に接触しないようにして、半導体チップ１１の表面電極膜２５と直接接触させ、互いに直接金属接合する。また、図４のように半導体チップ１１の表面電極膜２５をガードリング部より高く堆積させ、リードフレーム４３が直接接触できるようにすることで、直接金属接合する。尚、リードフレーム４３の半導体チップ１１との接合部には焼き鈍し、あるいは熱応力緩和のために、図３に示す溝４２を設ける処理を施す。このリードフレーム４３の溝４２によって表面積が増えるので放熱性を向上させる働きもある。また、直接金属接合の方法は前記した第１、第２実施例と同じである。
【００１９】
図５は、この発明の第２参考例の半導体装置の要部断面図である。絶縁基板の裏面導電膜１５ｃの面とヒートシンク１６の表面とを直接重ね合せ、直接金属接合させる。尚、ヒートシンク１６の表面には絶縁基板の裏面導電膜１５ｃより外側に絶縁基板の裏面導電膜１５ｃを囲むように溝４２を設ける。尚、直接金属接合の方法は前記した第１、第２実施例の方法と同じである。
【００２０】
第１、第２実施例、第１、第２参考例で説明したように、半導体チップ１１の裏面電極の最表面膜４１ａと絶縁基板１５の回路パターン１５ａの最表面膜４１ｂ、半導体チップ１１の表面電極膜２５とリードフレーム、絶縁基板１５の裏面導電膜１５ｃとヒートシンク１６をそれぞれ同一金属で成膜するか、ナノオーダーレベルでの加工をすることで、組立工程での半田付けとワイヤボンディング作業は不要となり、さらに、半田接合層分の熱抵抗が削除できることで、高性能な半導体装置を提供できる。
【００２１】
尚、これらの実施例は半導体チップを回路パターンに接合して使用するパワー半導体装置（ＩＧＢＴ、ダイオード、サイリスタ、トランジスタ、ＭＯＳＦＥＴなど）に共通したものである。
【００２２】
【発明の効果】
この発明によれば、半導体チップの裏面電極膜と絶縁基板上の回路パターンとの各最表面金属膜を同一金属で構成することで、両者を直接接合することが可能となり、実使用でも半田層の熱抵抗が削除され半導体素子の接合温度が低下し、接合状態も安定した信頼性の高い半導体装置の供給が可能となる。
【００２３】
また、半導体チップの裏面電極膜と絶縁基板上の回路パターンとをナノオーダーレベルで平行かつ平坦に加工し貼り合せることで、原子（分子）間力により直接接合が行われ、実使用での接合状態が安定した信頼性の高い半導体装置の供給が可能となる。
また、半導体チップの表面電極膜への電気的配線をリードフレームとし、その接合方法を直接金属接合とすることで、大容量クラスまで電気的接続が安定した半導体装置の供給が可能となる。
【００２４】
また、絶縁基板とヒートシンクとの接合方法を直接金属接合とすることで、半田層の熱抵抗が削除でき、機械的負荷に対して安定した半導体装置の供給が可能となる。
【図面の簡単な説明】
【図１】 この発明の第１実施例の半導体装置の要部断面図
【図２】 この発明の第２実施例の半導体装置の要部断面図
【図３】 この発明の第１参考例の半導体装置の要部断面図
【図４】 第１参考例の変形例を示す要部断面図
【図５】 この発明の第２参考例の半導体装置の要部断面図
【図６】 半導体モジュールの要部断面図
【図７】 ＩＧＢＴの１／２セルを示す要部断面図

Claims (4)

  1. 半導体チップの裏面に形成した裏面電極と、絶縁基板上に形成した回路パターン導板の各表面とを接続した半導体装置において、半導体チップの大きさを５ｍｍ□〜１０ｍｍ□とし、前記裏面電極と前記回路パターン導板をニッケル層または銅層の同一材料とし、互いの表面を接触させて直接金属接合することを特徴とする半導体装置。
  2. 請求項１に記載の半導体装置の製造方法において、互いの前記表面を加圧し、超音波振動もしくは加熱の少なくとも一方を実施することで前記接合が行われることを特徴とする半導体装置の製造方法。
  3. 半導体チップの裏面に形成した裏面電極と、絶縁基板上に形成した回路パターン導板とを接続した半導体装置において、前記裏面電極と前記回路パターン導板の互いの表面を１０ｎｍ以下の粗さで平坦化し、平坦化した表面を接触させて直接金属接合することを特徴とする半導体装置。
  4. 前記請求項３に記載の半導体装置の製造方法において、前記所定の粗さとするために、加工面である各表面をＣＭＰ（Ｃｈｅｍｉｃａｌ Ｍｅｃｈａｎｉｃａｌ Ｐｏｌｉｓｈｉｎｇ）処理と酸化しない不活性雰囲気での活性化による清浄処理とを行うことを特徴とする半導体装置の製造方法。
JP2002162594A 2002-06-04 2002-06-04 半導体装置およびその製造方法 Expired - Fee Related JP3928488B2 (ja)

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