JP4442609B2 - 半導体装置およびその製造方法 - Google Patents
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Description
また、半導体チップは大型化され、ワイヤボンディングによる配線方法では半導体装置の性能を十分に生かすことが困難となってきている。
この発明の目的は、前記の課題を解決して、半導体チップの裏面と絶縁基板との接合、半導体チップの表面と外部導出導体との接合および絶縁基板と冷却体(ヒートシンク)との接合において、半田を用いない接合とすることで、高性能で高信頼性の半導体装置を提供することにある。
また、回路パターン導板を形成した絶縁基板の裏面に形成した導板と、放熱体を接続した半導体装置において、前記導板と前記放熱体の互いの表面を所定の粗さで平坦化し、平坦化した表面を直に接触させて直接金属接合する。
また、前記の半導体装置の製造方法において、前記所定の粗さとするために、加工面である各表面をCMP(Chemical Mechanical Polishing)処理と酸化しない不活性雰囲気での活性化による清浄処理とを行う製造方法とする。
また、前記の半導体装置の製造方法において、互いの前記表面を加圧し、超音波振動もしくは加熱の少なくとも一方を実施することで直接金属接合するとよい。
また、絶縁基板とヒートシンクとの接合方法を直接金属接合とすることで、半田層の熱抵抗が削除でき、機械的負荷に対して安定した半導体装置の供給が可能となる。
半導体チップ11の裏面電極30(図7参照)の最表面膜41aは、Ni層、Cu層、Al層あるいは貴金属層(Au層)を、蒸着またはスパッタあるいはメッキにより成膜して形成する。一方、半導体チップ11を接合する絶縁基板15上の回路パターン15aの最表面膜41bも、半導体チップ11の裏面電極30の最表面膜41aと同一材料であるNi層、Cu層、Al層あるいは貴金属層(Au層など)を蒸着またはスパッタあるいはメッキによって成膜する。そして、最表面膜41a、41bで被覆された半導体チップの裏面電極30および絶縁基板15上に構成された回路パターン15aを互いに向き合せに配置し、加圧しながら超音波振動をさせ、場合によっては加熱することで、最表面(界面)に形成された同一金属が互いに拡散し、半田レスで直接金属接合する。超音波振動で直接金属接合させる条件は、例えば、半導体チップの大きさが5mm□〜10mm□の場合、超音波振動周波数は20kHz〜40kHz程度、加圧力は10kg(9.8×10N)〜40kg(9.8×40N)程度、時間は0.3sec〜0.6sec程度である。半導体チップ11の面積が大きくなった場合には、チップサイズに合わせて前記加圧力を増大する。また、加熱する場合の温度は150℃程度以下でよい。また、最表面41a、41bの粗さは小さい程好ましいが、μmオーダー以下であれば構わない。
また、前記の直接金属接合とは、接合する金属間に何も介在させず、接合する金属同志を直接接触させて接合することをいう。
12 半田
13 ワイヤ
14 端子
15 絶縁基板
15a 回路パターン
15b 絶縁板
15c 裏面導電膜
16 ヒートシンク
20 表面電極
21 半導体基板
22 ゲート酸化膜
23 ゲート電極
24 層間絶縁膜
25 表面電極膜
30 裏面電極
31 Al膜
32 Ti膜
33 Ni膜
34 Au膜
41a 最表面膜(半導体チップ側)
41b 最表面膜(回路パターン側)
43 リードフレーム
44 先端部
45 ガードリング
Claims (4)
- 半導体チップの表面に形成した表面電極と、導体とを接続し、前記半導体チップを搭載する回路パターン導板を形成した絶縁基板の裏面に形成した導板と、放熱体を接続した半導体装置において、
前記表面電極と前記導体との接続と、前記導板と前記放熱体との接続のうち少なくとも一方について、互いに接合する部材の表面を10nm以下の粗さで平坦化し、平坦化した表面を接触させて直接金属接合することを特徴とする半導体装置。 - 前記請求項1に記載の半導体装置の製造方法において、前記所定の粗さとするために、加工面である各表面をCMP(Chemical Mechanical Polishing)処理と酸化しない不活性雰囲気での活性化による清浄処理とを行うことを特徴とする半導体装置の製造方法。
- 請求項1に記載の半導体装置において、
前記表面電極と前記導体との接続と、前記導板と前記放熱体との接続のうち、前記表面電極と前記導体との接続を、互いに接合する部材の表面を10nm以下の粗さで平坦化し、平坦化した表面を接触させて直接金属接合する場合に、
前記表面電極と直接金属接合させる前記導体の先端部の接合面を凸状としたことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記表面電極と前記導体との接続と、前記導板と前記放熱体との接続のうち、前記表面電極と前記導体との接続を、互いに接合する部材の表面を10nm以下の粗さで平坦化し、平坦化した表面を接触させて直接金属接合する場合に、
前記導体と直接金属接合させる前記表面電極を、前記半導体チップが備えるガードリング部より高く堆積させたことを特徴とする半導体装置。
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JP2007008914A JP4442609B2 (ja) | 2007-01-18 | 2007-01-18 | 半導体装置およびその製造方法 |
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JP2016225461A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社東芝 | 複数部材の摩擦摺動接合方法およびこの方法によって得られた接合体ならびに半導体素子 |
JP6613806B2 (ja) | 2015-10-23 | 2019-12-04 | 富士電機株式会社 | 半導体装置 |
CN108615677B (zh) * | 2016-12-09 | 2021-04-16 | 全球能源互联网研究院 | 一种金属电极制备方法及平面栅型压接式igbt |
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