JP6440903B2 - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 220
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000463 material Substances 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 84
- 238000001816 cooling Methods 0.000 claims description 50
- 239000010949 copper Substances 0.000 claims description 32
- 229910052802 copper Inorganic materials 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 238000005452 bending Methods 0.000 description 31
- 230000035882 stress Effects 0.000 description 30
- 239000000919 ceramic Substances 0.000 description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
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- 229910017980 Ag—Sn Inorganic materials 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- 229910017755 Cu-Sn Inorganic materials 0.000 description 2
- 229910017927 Cu—Sn Inorganic materials 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- 239000006061 abrasive grain Substances 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
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- 238000004017 vitrification Methods 0.000 description 1
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Description
図1は、実施の形態1にかかる半導体装置101の構造を示す断面図である。半導体装置101は、半導体素子11、ダイボンド材22、絶縁基板13、接合材23、冷却部材12を備えている。
図14は、本実施形態に関する半導体装置102の構造を示す断面図である。半導体装置102は、実施の形態1における半導体装置101の構造に対して、絶縁基板13を絶縁基板14に置換した構成を有している。その他の構成要素は半導体装置101と同様である。但し、半導体素子11において、半導体基体11a、配線電極11b、裏面外部出力電極11cの区別は省略した。
図17は、本実施形態に関する半導体装置103の構造を示す断面図である。半導体装置103は、実施の形態1にかかる半導体装置101に対して、裏面外部出力電極11cおよび導板5のいずれもを、銅で構成し、ダイボンド材22を省略して実現される。つまり、裏面外部出力電極11cおよび導板5はダイボンド材22を介さずに互いに接合される。その他の構成は半導体装置101と同様である。
図19は、本実施形態に関する半導体装置105の構造を示す断面図である。半導体装置105は、実施の形態1で説明された半導体装置101に対して、リード3、接合材4および封止樹脂17を追加した構成を有する。但し、本実施の形態では冷却部材12には、放熱フィン12aを有する形状が採用されている。また、半導体素子11において、半導体基体11a、配線電極11b、裏面外部出力電極11cの区別は省略した。
Claims (8)
- 絶縁板と、前記絶縁板の一方の面に設けられた第1の導板と、前記絶縁板の他方の面に設けられた第2の導板とを有する絶縁基板と、
焼結金属と、
前記焼結金属を介して前記第1の導板上に設けられたチップ厚みの30%以下のクラック進展深さ率を有し、厚さ0.05mm以上0.1mm以下である半導体素子と、
接合材と、
前記接合材を介して前記第2の導板に接合された冷却部材とを備える半導体装置。 - 前記焼結金属の厚さは3μm以上100μm以下である、請求項1に記載の半導体装置。
- 前記絶縁板は、窒化珪素、窒化アルミニウムまたはアルミナで構成される、請求項1に記載の半導体装置。
- 前記第2の導板が、銅または銅合金と、アルミニウムまたはアルミニウム合金との積層構造を有する、請求項1に記載の半導体装置。
- 前記冷却部材が、アルミニウム又はアルミニウム合金で構成される、請求項1に記載の半導体装置。
- 前記半導体素子はSiCを基材とする半導体基体を有する、請求項1から請求項5のいずれか一つに記載の半導体装置。
- (a)絶縁板と、前記絶縁板の一方の面に設けられた第1の導板と、前記絶縁板の他方の面に設けられた第2の導板とを有する絶縁基板を用意する工程と、
(b)前記第1の導板に、焼結金属を介して、厚みが0.05mm以上0.1mm以下であり、厚みの30%以下のクラック進展深さ率を有する半導体素子を設ける工程と、
(c)前記第2の導板に、第1の接合材を介して冷却部材を接合させる工程と、
を備える半導体装置の製造方法。 - (d)前記半導体素子の、前記焼結金属とは反対側に第2の接合材を介してリードを接合する工程と、
(e)前記半導体素子と前記絶縁基板と前記リードとを封止樹脂で封止する工程と
をさらに備える、請求項7に記載の半導体装置の製造方法。
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PCT/JP2016/082199 WO2017183222A1 (ja) | 2016-04-21 | 2016-10-31 | 半導体装置およびその製造方法 |
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US11387213B2 (en) * | 2020-06-05 | 2022-07-12 | Advanced Semiconductor Engineering, Inc. | Method for manufacturing a semiconductor package |
JP6803106B1 (ja) * | 2020-09-18 | 2020-12-23 | 株式会社半導体熱研究所 | 半導体デバイスの接合部材 |
JP7553194B2 (ja) * | 2020-12-23 | 2024-09-18 | ミネベアパワーデバイス株式会社 | 半導体装置およびその製造方法 |
US20230078615A1 (en) * | 2021-09-16 | 2023-03-16 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor devices and methods of manufacturing semiconductor devices |
DE102023110701B3 (de) | 2023-04-26 | 2024-10-02 | Danfoss Silicon Power Gmbh | Befestigung eines Befestigungsobjekts an einem Basisbauteil über einen Zwischenwärmespreizer, der unter Druck auf das Befestigungsobjekt gesintert und mit dem Basisbauteil verlötet wird |
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DE4233073A1 (de) * | 1992-10-01 | 1994-04-07 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-Modulaufbaus |
JP3604988B2 (ja) * | 2000-02-14 | 2004-12-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2001222751A (ja) * | 2000-02-14 | 2001-08-17 | Toshiba Electric Appliance Co Ltd | 自動販売機温度制御装置 |
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