JP6272512B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6272512B2 JP6272512B2 JP2016571667A JP2016571667A JP6272512B2 JP 6272512 B2 JP6272512 B2 JP 6272512B2 JP 2016571667 A JP2016571667 A JP 2016571667A JP 2016571667 A JP2016571667 A JP 2016571667A JP 6272512 B2 JP6272512 B2 JP 6272512B2
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Description
<構成>
以下、特に指定なく銅(Cu)またはアルミニウム(Al)などの元素記号または材料名を記載した場合は、他の添加物を含んだ、たとえば、銅合金またはアルミニウム合金も包含するものとする。
次に、本実施形態に関する半導体装置の製造方法について説明する。まず、1つ目の製造方法例として、接合材4が液相拡散接合で得られるCu−Sn合金であり、積層板材33が絶縁基板13に接合された場合の製造方法について、図14から図17を参照しつつ説明する。
<製造方法>
次に、2つ目の製造方法例として、接合材2が液相拡散接合で得られるCu−Sn合金であり、積層板材33が冷却器20に接合された場合の製造方法について、図18から図22を参照しつつ説明する。
次に、3つ目の製造方法例として、接合材4が接合材2と同種の材料からなる場合について説明する。サブモジュール51の製造方法は、第2実施形態に示された製造方法例と同様である。
次に、図5に例示される構造のサブモジュール51aの製造方法例として、接合材4が液相拡散接合で得られるCu−Sn合金であり、積層板材33が絶縁基板13に接合された場合の製造方法について、図23から図27を参照しつつ説明する。
以下に、上記の実施形態による効果を例示する。
上記実施形態では、各構成要素の材質、材料、寸法、形状、相対的配置関係または実施の条件などについても記載している場合があるが、これらはすべての局面において例示であって、本明細書に記載されたものに限られることはない。よって、例示されていない無数の変形例が、本技術の範囲内において想定される。たとえば、任意の構成要素を変形する場合、追加する場合または省略する場合、さらには、少なくとも1つの実施形態における少なくとも1つの構成要素を抽出し、他の実施形態の構成要素と組み合わせる場合が含まれる。
Claims (12)
- 絶縁板(6)と、前記絶縁板(6)の両面に設けられる導板(5、7)とを備える絶縁基板(13)と、
前記絶縁基板(13)の上面に設けられる半導体チップ(11)と、
前記絶縁基板(13)の下面に接合される板材(3、33)と、
前記板材(3、33)の下面に接合される冷却器(20)とを備え、
前記絶縁基板(13)の下面と前記板材(3、33)との接合、および、前記板材(3、33)の下面と前記冷却器(20)との接合の少なくとも一方が、錫を主成分とした接合材(4、2)を介してなされ、
前記板材(3、33)の繰り返し応力が、前記接合材(4、2)の引っ張り強さよりも小さい、
半導体装置。 - 前記板材(3、33)が、純度99.999%以上のアルミニウムからなる、
請求項1に記載の半導体装置。 - 前記板材(33)が、純度99.999%以上のアルミニウムからなるアルミニウム板材(3)と、前記アルミニウム板材(3)の両面に設けられる伝導材(31、32)とを備える、
請求項1に記載の半導体装置。 - 前記伝導材(31、32)が銅であり、前記アルミニウム板材(3)の両面に設けられるそれぞれが厚さ0.1mm以上である、
請求項3に記載の半導体装置。 - 前記アルミニウム板材(3)と、前記伝導材(31、32)との接合が、圧着、圧延、圧接、または、ロウ付けによる、
請求項3または請求項4に記載の半導体装置。 - 前記接合材(4、2)が、アンチモンを6重量%以上含む、
請求項1から請求項5のうちのいずれか1項に記載の半導体装置。 - 125℃における前記板材(3、33)の前記繰り返し応力が、125℃における前記接合材(4、2)の前記引っ張り強さよりも小さい、
請求項1から請求項6のうちのいずれか1項に記載の半導体装置。 - 絶縁板(6)と前記絶縁板(6)の両面に設けられる導板(5、7)とを備える絶縁基板(13)の上面と、半導体チップ(11)とを接合し、
前記絶縁基板(13)の下面と板材(3、33)とを接合し、
前記板材(3、33)の下面と冷却器(20)とを接合し、
前記絶縁基板(13)の下面と前記板材(3、33)との接合、および、前記板材(3、33)の下面と前記冷却器(20)との接合の少なくとも一方は、錫を主成分とした接合材(4、2)を介してなされ、
前記板材(3、33)の繰り返し応力は、前記接合材(4、2)の引っ張り強さよりも小さく、
前記接合材(4、2)を介して接合する際の温度が、前記絶縁基板(13)の上面と前記半導体チップ(11)とを接合する際の温度よりも低い、
半導体装置の製造方法。 - 前記絶縁基板(13)の上面と前記半導体チップ(11)とをナノAgを用いたAgシンタリング法によって接合する、
請求項8に記載の半導体装置の製造方法。 - 前記絶縁基板(13)の上面と前記半導体チップ(11)とを接合する前に、前記絶縁基板(13)の下面と前記板材(3、33)とを前記接合材(4)を介して接合し、
前記絶縁基板(13)の下面と前記板材(3、33)とを前記接合材(4)を介して接合するに際し、
前記絶縁基板(13)の下面と前記板材(3、33)との間に、厚さが0.02mm以上0.1mm以下である錫箔または錫ペーストを挟み、さらに、1kPa以上100kPa以下の圧力を加えながら加熱することによって前記錫箔または前記錫ペーストを溶融させて、液相拡散によって銅−錫合金である前記接合材(4)を形成する、
請求項8または請求項9に記載の半導体装置の製造方法。 - 前記絶縁基板(13)の下面と前記板材(3、33)とを接合する前に、前記板材(3、33)の下面と前記冷却器(20)とを前記接合材(2)を介して接合し、
前記板材(3、33)の下面と前記冷却器(20)とを前記接合材(2)を介して接合するに際し、
前記板材(3、33)の下面と前記冷却器(20)との間に、厚さが0.02mm以上0.1mm以下である錫箔または錫ペーストを挟み、さらに、1kPa以上100kPa以下の圧力を加えながら加熱することによって前記錫箔または前記錫ペーストを溶融させて、液相拡散によって銅−錫合金である前記接合材(2)を形成する、
請求項8または請求項9に記載の半導体装置の製造方法。 - ポッティングによって、少なくとも前記絶縁基板(13)および前記半導体チップ(11)を覆う封止材(8)をさらに形成する、
請求項8から請求項11のうちのいずれか1項に記載の半導体装置の製造方法。
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