JP6309112B2 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
- Publication number
- JP6309112B2 JP6309112B2 JP2016567297A JP2016567297A JP6309112B2 JP 6309112 B2 JP6309112 B2 JP 6309112B2 JP 2016567297 A JP2016567297 A JP 2016567297A JP 2016567297 A JP2016567297 A JP 2016567297A JP 6309112 B2 JP6309112 B2 JP 6309112B2
- Authority
- JP
- Japan
- Prior art keywords
- power module
- wiring
- sealing resin
- semiconductor element
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 claims description 209
- 239000004065 semiconductor Substances 0.000 claims description 122
- 238000007789 sealing Methods 0.000 claims description 120
- 229920005989 resin Polymers 0.000 claims description 115
- 239000011347 resin Substances 0.000 claims description 115
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 39
- 238000012986 modification Methods 0.000 description 27
- 230000004048 modification Effects 0.000 description 27
- 230000035882 stress Effects 0.000 description 16
- 239000004020 conductor Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 238000009751 slip forming Methods 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 235000011962 puddings Nutrition 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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Description
ここでは、パワー半導体素子に電気的に接続される配線材として、平板状の配線材を適用したパワーモジュールについて説明する。
ここでは、配線材2のパワー半導体素子4への接続態様の変形例について説明する。図2に示すように、配線材2は、配線材2の端部が接合材5に接続される態様で、パワー半導体素子4に接続されており、配線材2の端面と接合材5の端面とがほぼ面一になっている。
ここでは、パワー半導体素子を複数備えたパワーモジュールについて説明する。図3に示すように、パワーモジュールPMは、たとえば、2つのパワー半導体素子4を備えている。その2つのパワー半導体素子4の間を渡すように、接合材5によって配線材2が接続されている。
ここでは、パワー半導体素子に電気的に接続される配線材として、板状部と凸部とを備えた配線材を適用したパワーモジュールの第1例について説明する。
図7に示すように、第1変形例に係るパワーモジュールPMでは、前述した図2に示す構造と同様に、配線材2の端部が接合材5に接続される態様で、配線材2がパワー半導体素子4に接続されている。
図8に示すように、第2変形例に係るパワーモジュールPMでは、前述した図3に示す構造と同様に、2つのパワー半導体素子4を備え、その2つのパワー半導体素子4の間を渡すように、接合材5によって配線材2が接続されている。
ここでは、パワー半導体素子に電気的に接続される配線材として、板状部と凸部とを備えた配線材を適用したパワーモジュールの第2例について説明する。
図10に示すように、変形例に係るパワーモジュールPMでは、前述した図3に示す構造と同様に、2つのパワー半導体素子4を備え、その2つのパワー半導体素子4の間を渡すように、接合材5によって配線材2が接続されている。
ここでは、パワー半導体素子に電気的に接続される配線材として、板状部と凸部とを備えた配線材を適用したパワーモジュールの第3例について説明する。
図12に示すように、変形例に係るパワーモジュールPMでは、前述した図3に示す構造と同様に、2つのパワー半導体素子4を備え、その2つのパワー半導体素子4の間を渡すように、接合材5によって配線材2が接続されている。
ここでは、パワー半導体素子に電気的に接続される配線材として、板状部と凸部とを備えた配線材を適用したパワーモジュールの第4例について説明する。
Claims (17)
- 互いに対向する第1表面および第2表面を有し、前記第1表面に第1電極が形成され、前記第2表面に第2電極が形成されたパワー半導体素子と、
前記パワー半導体素子の前記第1表面と対向するように配置された配線材と、
前記第1電極と前記配線材との間に介在するように形成され、前記第1電極と前記配線材とを電気的かつ機械的に接続する接合材と、
前記パワー半導体素子の前記第2表面と対向するように配置され、前記第2電極と電気的かつ機械的に接続された回路基板と、
前記パワー半導体素子、前記配線材、前記接合材および前記回路基板を封止する封止樹脂と
を有し、
前記パワー半導体素子と前記配線材との間に位置する前記接合材の端面から、前記端面と前記端面とは距離を隔てられた前記配線材の箇所との間に位置する前記配線材の表面にわたって、前記接合材の前記端面および前記配線材の前記表面と前記封止樹脂との間に隙間部を備えた、パワーモジュール。 - 前記隙間部に位置する前記配線材の前記表面の部分に、めっき膜、離型剤およびはんだから選ばれる少なくともいずれかが形成された、請求項1記載のパワーモジュール。
- 前記めっき膜はNiめっきである、請求項2記載のパワーモジュール。
- 前記はんだは、Snを含む鉛フリーはんだである、請求項2記載のパワーモジュール。
- 前記隙間部に位置する前記配線材の前記表面の部分は、平滑面である、請求項1記載のパワーモジュール。
- 前記接合材の前記端面から、前記配線材の前記箇所よりもさらに距離を隔てられた、前記配線材の他の箇所の表面の部分では、前記封止樹脂が前記配線材に密着した密着部を備えた、請求項1記載のパワーモジュール。
- 前記密着部に位置する前記配線材の前記表面の部分に、ディンプル、開口および通し穴から選ばれる少なくともいずれかが形成された、請求項6記載のパワーモジュール。
- 前記密着部に位置する前記配線材の前記表面の部分は、粗化表面である、請求項6記載のパワーモジュール。
- 前記配線材は平板状である、請求項1記載のパワーモジュール。
- 前記配線材は、板状部と凸部とを含み、
前記凸部と前記第1電極とが前記接合材によって接続され、
前記隙間部は前記凸部の側面を含む、請求項1記載のパワーモジュール。 - 前記凸部は、前記板状部を突出させる態様で形成された、請求項10記載のパワーモジュール。
- 前記凸部は中実である、請求項10記載のパワーモジュール。
- 前記凸部と前記板状部とは一体的に形成された、請求項10記載のパワーモジュール。
- 前記凸部と前記板状部とは別体とされ、
前記凸部は前記板状部に接合された、請求項10記載のパワーモジュール。 - 前記凸部の少なくとも一部の表面に、ニッケルめっきが施されている、請求項14記載のパワーモジュール。
- 前記接合材の前記端面は、前記配線材から前記第1電極にかけて裾野が拡がる態様でフィレットの形状を呈する、請求項10記載のパワーモジュール。
- 前記接合材は、はんだから形成され、
前記封止樹脂は、エポキシ樹脂から形成された、請求項1記載のパワーモジュール。
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US11570921B2 (en) * | 2015-06-11 | 2023-01-31 | Tesla, Inc. | Semiconductor device with stacked terminals |
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