CN107112318B - 功率模块 - Google Patents

功率模块 Download PDF

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Publication number
CN107112318B
CN107112318B CN201580071608.6A CN201580071608A CN107112318B CN 107112318 B CN107112318 B CN 107112318B CN 201580071608 A CN201580071608 A CN 201580071608A CN 107112318 B CN107112318 B CN 107112318B
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Prior art keywords
wiring material
power module
sealing resin
module according
power semiconductor
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CN201580071608.6A
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CN107112318A (zh
Inventor
福本晃久
根岸哲
山本圭
筱原利彰
西川和康
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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Abstract

功率模块(PM)具备功率半导体元件(4)、布线材料(2)、电路基板(6)、外部端子(8)、接合材料(5、7)以及密封树脂(1)。以从位于功率半导体元件(4)与布线材料(2)之间的接合材料(5)的端面起遍及位于该端面和与该端面隔开距离的布线材料(2)的规定部位之间的布线材料(2)的表面的方式，在接合材料(5)的端面以及布线材料(2)的表面与密封树脂(1)之间连续地形成有间隙部(3)。

Description

功率模块
技术领域
本发明涉及功率模块，特别涉及利用树脂密封功率半导体元件的 功率模块。
背景技术
在控制电力的功率模块中，例如，搭载有二极管、绝缘栅双极晶 体管(IGBT：Insulated Gate Bipolar Transistor)或者金属氧化膜场 效应晶体管(MOSFET：MetalOxide Semiconductor Field Effect Transistor)等功率半导体元件。
在这些功率半导体元件中，将电极分别形成于对置的两个面。将 电路基板或者布线材料等电连接到该电极，利用密封树脂对该功率半 导体元件进行绝缘密封，从而制造功率模块。
例如通过经由焊锡等接合材料将功率半导体元件接合到电路基 板上而进行功率半导体元件与电路基板的电连接。另外，例如在大电 流用的功率模块的情况下，通过经由焊锡等接合材料将板状的布线材 料接合到功率半导体元件的电极而进行功率半导体元件与布线材料 的电连接。
该板状的布线材料和功率半导体元件的线膨胀系数大不相同。例 如，作为板状的布线材料而被频繁地使用的铜的线膨胀系数约是 17ppm/℃(17μm/℃/m)。另一方面，作为功率半导体元件而被频繁 地使用的硅的线膨胀系数约是3ppm/℃(3μm/℃/m)。当半导体模块 的周围的温度(环境温度)或者功率半导体元件自身的温度发生变动 时，该两者的线膨胀系数之差导致对将板状的布线材料与功率半导体 元件连接的接合材料施加热应力。当向接合材料反复施加热应力时， 接合材料产生裂纹，存在损害功率模块的功能的问题。
为了解决这样的问题，采用如下方法：将固化性的密封树脂用作 功率模块的绝缘密封，利用密封树脂以机械的方式约束功率半导体元 件、接合材料以及板状的布线材料，从而增强接合材料。利用密封树 脂的绝缘密封通过以下方式进行：用固化前的密封树脂填满完成与电 路基板以及布线材料等的连接的功率半导体元件的周围，并使树脂从 该状态开始固化。
作为其一个例子，存在如下方法：在将完成与电路基板以及布线 材料等的连接的功率半导体元件设置于金属模具内，之后将固化前的 密封树脂灌入到该金属模具，一边施加压力一边使密封树脂固化。另 外，作为另一例子，存在如下方法：将接合有功率半导体元件的电路 基板接合到底板，将具有包围功率半导体元件周围的形状的壳体粘接 到底板之上，之后将固化前的密封树脂灌入到壳体内部，使密封树脂 固化。
然而，一般来说，密封树脂的线膨胀系数比功率半导体元件的线 膨胀系数大，所以，在环境温度、或功率半导体元件自身的温度变动 时，在密封树脂与功率半导体元件之间的界面处产生剪切应力。在密 封树脂相对功率半导体元件的粘合力弱时，有可能密封树脂从功率半 导体元件剥离，功率半导体元件的电极间的绝缘性降低。
作为防止这样的功率半导体元件与密封树脂之间的剥离的方法， 例如在专利文献1以及专利文献2中提出如下方法：针对完成电路基 板与布线材料等的连接的功率半导体元件形成与密封树脂的粘合力 强的聚酰亚胺的被膜，利用密封树脂从聚酰亚胺被膜的上方进行密 封。
进一步地，在专利文献2中提出使密封树脂从位于远离功率半导 体元件以及接合材料的部位的布线材料的表面的部分剥离的方法。在 该方法中，使远离接合材料的部位的密封树脂剥离而缓和应力，从而 抑制密封树脂从接合材料的表面以及功率半导体元件的表面剥离。
现有技术文献
专利文献1：日本特开2006－179538号公报
专利文献2：日本特开2006－179655号公报
发明内容
在以往的功率模块中，依然需要在针对完成电路基板与布线材料 等的连接的功率半导体元件形成聚酰亚胺被膜等任意包覆之后进行 树脂密封。然而，完成与电路基板以及布线材料等的连接的功率半导 体元件由于具有复杂的形状，所以难以形成均匀的被膜，需要较复杂 的工序。
本发明是为了解决上述问题而完成的，其目的在于提供能够简便 地防止密封树脂从功率半导体元件等剥离的功率模块。
本发明的功率模块具有功率半导体元件、布线材料、接合材料、 电路基板、密封树脂。功率半导体元件具有相互对置的第1表面以及 第2表面，在第1表面形成有第1电极，在第2表面形成有第2电极。 布线材料配置成与功率半导体元件的第1表面对置。接合材料形成为 位于第1电极与布线材料之间，将第1电极与布线材料电连接且机械 连接。电路基板配置成与功率半导体元件的第2表面对置，与第2电 极电连接且机械连接。密封树脂对功率半导体元件、布线材料、接合 材料以及电路基板进行密封。并且，以从位于功率半导体元件与布线 材料之间的接合材料的端面起遍及位于该端面和与该端面隔开距离 的布线材料的部位之间的布线材料的表面的方式，在接合材料的端面 以及布线材料的表面与密封树脂之间具备间隙部。
根据本发明的功率模块，以从位于功率半导体元件与布线材料之 间的接合材料的端面起遍及位于该端面和与该端面隔开距离的布线 材料的部位之间的布线材料的表面的方式，在接合材料的端面以及布 线材料的表面与密封树脂之间具备间隙部。由此，能够缓和功率半导 体元件与密封树脂之间的界面处的应力，使密封树脂不易从功率半导 体元件剥离，抑制剥离扩展。
附图说明
图1是本发明的实施方式1的功率模块的剖视图。
图2是在该实施方式中第1变形例的功率模块的剖视图。
图3是在该实施方式中第2变形例的功率模块的剖视图。
图4是示出在该实施方式中布线材料的使粘合力降低的表面的 局部俯视图。
图5是本发明的实施方式2的功率模块的剖视图。
图6是在该实施方式中功率模块的布线材料的局部立体图，(a) 是一个例子的布线材料的局部立体图，(b)是另一例子的布线材料 的局部立体图。
图7是在该实施方式中第1变形例的功率模块的剖视图。
图8是在该实施方式中第2变形例的功率模块的剖视图。
图9是本发明的实施方式3的功率模块的剖视图。
图10是在该实施方式中变形例的功率模块的剖视图。
图11是本发明的实施方式4的功率模块的剖视图。
图12是在该实施方式中变形例的功率模块的剖视图。
图13是本发明的实施方式5的功率模块的剖视图。
图14是示出在该实施方式中功率半导体元件的电极与布线材料 的焊锡濡湿的部位的位置关系的俯视图。
(符号说明)
PM功率模块；1密封树脂；101带有圆形的形状；2布线材料； 201、202表面；203凸部；204平板状导电体；205濡湿的部位；3间 隙部；4功率半导体元件；401电极、5接合材料；6电路基板；601 金属板；602绝缘基板；603金属板；7接合材料；8外部端子；9接 合材料；10块状导电体。
具体实施方式
实施方式1
在这里，说明应用平板状的布线材料作为电连接于功率半导体元 件的布线材料的功率模块。
如图1所示，功率模块PM具备功率半导体元件4、布线材料2、 电路基板6、外部端子8、接合材料5、7以及密封树脂1。功率半导 体元件4具有对置的2个表面，并且在一个表面和另一个表面分别形 成电极(未图示)。布线材料2被设为平板状。电路基板6具备具有 对置的2个表面的绝缘基板602以及金属板601、603，将金属板601 配置于绝缘基板602的一个表面，将金属板603配置于绝缘基板602 的另一个表面。
平板状的布线材料2利用接合材料5而与形成于功率半导体元件 4的一个表面的电极电连接且机械连接。电路基板6的金属板601利 用接合材料7而与形成于功率半导体元件4的另一个表面的电极电连 接且机械连接。另外，使用接合材料(未图示)或者超声波接合法等 将外部端子8与金属板601电连接且机械连接。
绝缘基板602例如由氧化铝、氮化铝、氮化硅等陶瓷或者环氧树 脂等绝缘体形成。金属板601、603由铜或者铝等导体形成。作为接 合材料5、7，例如应用焊锡等。
在使布线材料2以及外部端子8的一部分(端部)从密封树脂1 突出、并且使电路基板6的金属板603的表面露出的形态下，密封树 脂1对功率半导体元件4、电路基板6、接合材料5、7以及外部端子 8进行绝缘密封。密封树脂1设为热固化性，例如应用环氧树脂。将 从密封树脂1突出的布线材料2的部分和外部端子8的部分用作电流 以及电压的输入输出端子。另外，将露出的金属板603的面(底面) 用作与散热器的连接面。
在该功率模块PM中设置有密封树脂1从布线材料2以及接合材 料5剥离而成的间隙部3。间隙部3以从位于功率半导体元件4与布 线材料2之间的接合材料5的端面起遍及位于该端面和与该端面隔开 距离的布线材料2的部位之间的布线材料2的表面的方式，形成于接 合材料5的端面以及布线材料2的表面与密封树脂1之间。在该间隙 部3中，产生微小的间隙。此外，在图1等中，为了方便说明，夸大 地示出间隙。
在这里，在本说明书中，所谓间隙部3是指形成于密封树脂1 与接合材料5的端面之间的空间或者形成于密封树脂1与布线材料2 的表面之间的空间，是由密封树脂1、接合材料5、布线材料2和功 率半导体元件4包围的区域。另外，间隙这样的表述并不规定空间是人为地形成的还是自发地形成的。
为了设置间隙部3，选择与密封树脂1的粘合力较弱的材料作为 接合材料5，例如应用焊锡。另外，对间隙部3所位于的布线材料2 的部分的表面201预先实施使与密封树脂的粘合力降低的处理。
关于这一点，再进一步地详细说明。关于接合材料5，在分别对 布线材料2与密封树脂1的粘合力、功率半导体元件4与密封树脂1 的粘合力、金属板601与密封树脂1的粘合力以及接合材料5与密封 树脂1的粘合力进行了比较的情况下，选定接合材料5与密封树脂1 的粘合力最弱的接合材料5。作为这样的接合材料5，例如存在包括 Sn的无铅焊锡。具体来说，是Sn－Cu合金、Sn－Ag合金或者Sn－ Ag－Cu合金等材料类。上述粘合力例如能够分别通过布丁杯 (pudding cup)试验等来事先测定。此外，所谓布丁杯试验是指将布 丁杯形状的树脂形成于任意的部件的表面而进行剪切强度试验的方 法。
功率模块PM的安装工序按照以下顺序执行：将功率半导体元件 4向电路基板6接合的工序、将布线材料2向功率半导体元件4接合 的工序、利用密封树脂1进行绝缘密封的工序。外部端子8与电路基 板6的接合只要在绝缘密封之前，则可以是任意顺序。在这里，在利 用热固化性的密封树脂1进行绝缘密封时，为了使密封树脂1固化， 功率模块PM的整体暴露于100～200℃左右的温度环境。在密封树脂 1固化之后，当使温度降低至室温时，在密封树脂1与构造体的界面 产生由于线热膨胀率之差引起的热应力。
此时，选择与密封树脂1的粘合力较弱的材料作为接合材料5， 从而在使温度降低至室温的时刻，接合材料5与密封树脂1的界面由 于该热应力而优先剥离。
间隙部3所位于的布线材料2的部分的表面201是与接合材料5 邻接的部位或者与接合材料5接近的部位。另外，布线材料2的表面 201位于与功率半导体元件4对置的表面。表面201的面积小于布线 材料2的表面A与密封树脂1之间的界面的总面积。
对该布线材料2的表面201预先实施使与密封树脂1的粘合力降 低的处理。由此，在使密封树脂1固化之后，在使温度降低至室温的 时刻，由于热应力，密封树脂1从表面201剥离。在这里，作为使布 线材料2的表面201与密封树脂1的粘合力降低的处理，例如有对布线材料2实施镀镍(Ni)的方法、使无铅焊锡附着于布线材料2的表 面的方法、使布线材料2的表面变得平滑的方法。以上列举出的方法 只要在绝缘密封之前，则可以按安装工序的任意顺序来实施。
Ni镀层、无铅焊锡能够通过图案镀敷等形成于布线材料2的表 面。另外，在将无铅焊锡用于接合材料5时，使无铅焊锡的供给量增 多，使其濡湿至表面201，从而能够在布线材料2的表面形成无铅焊 锡。能够通过任意的研磨方法实现表面的平滑化。
除了这些以外，还存在将脱模剂涂敷于布线材料2的表面的方 法。在该方法中，通过将脱模剂涂敷于布线材料2的表面，能够使布 线材料2的表面201与密封树脂1的粘合力降低。该方法最好在安装 工序中通过在将布线材料2接合到功率半导体元件4之后、利用密封 树脂1进行绝缘密封之前的阶段使液滴附着于针尖而进行涂敷等方法 来实施。
通过实施这样的处理，以从位于功率半导体元件4与布线材料2 之间的接合材料5的端面起遍及位于该端面和与该端面隔开距离的布 线材料2的部位之间的布线材料2的表面的方式，在接合材料5的端 面以及布线材料2的表面与密封树脂1之间连续地形成间隙部3。
在上述功率模块PM中，以从接合材料5的端面起遍及位于该端 面和与该端面隔开距离的布线材料2的部位之间的布线材料2的表面 的方式，在接合材料5的端面以及布线材料2的表面与密封树脂1之 间连续地形成有间隙部3。由此，能够缓和功率半导体元件4与密封 树脂1之间的界面处的应力，使密封树脂1不易从功率半导体元件4 剥离，抑制剥离扩展。
特别是，通过将间隙部3设置成包括位于功率半导体元件4与布 线材料2最接近的部分的接合材料5的端面，与将间隙部3设置于远 离功率半导体元件以及接合材料的部位的情况相比，能够有效地缓和 由于功率半导体元件4与布线材料2的线膨胀系数的差异引起的应 力。
进一步地，为了有效地阻止剥离扩展，在作为剥离前进的前方的 部位实施提高密封树脂1与布线材料2的粘合力的处理即可。如图1 所示，例如，对与和接合材料5的端面隔开距离的布线材料2的规定 部位相比隔开更大距离的其他部位的表面202实施体现与密封树脂1 的锚固效应的处理即可。
布线材料2的表面202是与表面201邻接的部位或者与表面201 接近的部位。另外，布线材料2的表面202位于与功率半导体元件4 对置的表面(表面A)。表面202的面积小于布线材料2的表面A与 密封树脂之间的界面的总面积。作为体现锚固效应的处理，例如存在使布线材料2的表面粗糙化的方法。另外，有在布线材料2形成孔或 者贯通孔的方法等。
接下来，说明上述功率模块PM的变形例。此外，在各变形例中， 对与图1所示的功率模块PM的结构相同的部件附加相同的符号，除 必要的情况之外，不重复其说明。
(第1变形例)
在这里，说明布线材料2与功率半导体元件4连接的连接形态的 变形例。如图2所示，布线材料2以将布线材料2的端部连接到接合 材料5的形态连接于功率半导体元件4，布线材料2的端面与接合材 料5的端面大致平齐。
作为间隙部，除间隙部3之外，还形成有密封树脂1以遍及从接 合材料5的端面起至布线材料2的端面的一部分为止的表面的方式连 续地剥离而成的间隙部3a。另外，对该间隙部3a的附近的布线材料 2的端面的部分(表面202)实施提高密封树脂1与布线材料2的粘 合力的处理。此外，为了在布线材料2的端面设置间隙部3a，例如， 应用0.1mm量级至1mm(几mm)量级的厚度的布线材料。
在第1变形例的功率模块PM中，间隙部3a从接合材料5的端 面形成至布线材料2的端面的一部分。在形成有这样的间隙部3a的 情况下，由于密封树脂1从布线材料2等剥离，所以也能够缓和功率 半导体元件4与密封树脂1之间的界面处的应力。由此，能够使密封树脂1不易从功率半导体元件4剥离，抑制剥离扩展。
(第2变形例)
在这里，说明具备多个功率半导体元件的功率模块。如图3所示， 功率模块PM例如具备2个功率半导体元件4。布线材料2利用接合 材料5被连接成跨过该2个功率半导体元件4之间。
在第2变形例的功率模块PM中，虽然具备2个功率半导体元件 4，但对该2个功率半导体元件4的各个形成有间隙部3。由此，能够 缓和各个功率半导体元件4与密封树脂1之间的界面处的应力。其结 果，能够使密封树脂1不易从功率半导体元件4剥离，抑制剥离扩展。
这样，在上述各功率模块PM中形成有间隙部3，从而能够缓和 应力。如上所述，在间隙部3中，对布线材料2的表面201实施使与 密封树脂1的粘合力降低的处理。在这里，在图4中示出布线材料2 的表面201的图案的一个例子。如图4所示，表面201以包围接合材 料5所位于的区域(中央的矩形部分)的方式配置成具有宽度的框状。
如已经说明的那样，使粘合力降低的处理有对与表面201对应的 布线材料2的区域实施镀镍(Ni)的方法。另外，有利用模板对与表 面201对应的布线材料2的区域印刷涂敷脱模剂的方法等。
在实施了这样处理的布线材料2的表面201，在密封树脂1固化 之后，当使温度降低至室温时，密封树脂1经受不住在与密封树脂1 的界面处产生的由线热膨胀率之差引起的热应力而从表面201剥离。 因此，能够通过改变实施使粘合力降低的处理的面积来设计间隙部3。
该处理能够在将布线材料2以及电路基板6连接到功率半导体元 件4之前进行。因此，与在结束功率半导体元件与电路基板以及布线 材料的连接之后实施处理的情况相比，能够对连接电路基板以及布线 材料之前的布线材料2实施处理，能够更简便地进行工作，适合于量 产。
实施方式2
在这里，说明将具备板状部和凸部的布线材料作为电连接到功率 半导体元件的布线材料应用的功率模块的第1例。
如图5所示，在功率模块PM中，布线材料2具有板状部和凸部 203。利用接合材料5将布线材料2的凸部203与形成于功率半导体 元件4的一个表面的电极电连接且机械连接。此外，这以外的结构与 图1所示的功率模块PM相同，所以对相同的部件附加相同的符号，除必要的情况之外，不重复其说明。
例如如图6(a)所示，能够应用对板状部进行折弯加工从而形 成凸部203的布线材料2作为具有板状部和凸部203的布线材料2。 另外，如图6(b)所示，能够应用对板状部实施压花加工从而形成有 凸部203的布线材料2。
在上述功率模块PM中，也以从接合材料5的端面起遍及位于该 端面和与该端面隔开距离的布线材料2的部位之间的布线材料2的表 面的方式，在接合材料5的端面以及布线材料2的表面与密封树脂1 之间连续地形成有间隙部3。由此，能够缓和功率半导体元件4与密 封树脂1之间的界面处的应力，使密封树脂1不易从功率半导体元件 4剥离，抑制剥离扩展。
另外，对与和接合材料5的端面隔开距离的布线材料2的规定部 位相比隔开更大距离的其他部位的表面202实施体现与密封树脂1的 锚固效应的处理。由此，能够有效地阻止剥离扩展。
接下来，说明上述功率模块PM的变形例。此外，在各变形例中， 对与图5或者图2所示的功率模块PM的结构相同的部件附加相同的 符号，除必要的情况之外，不重复其说明。
(第1变形例)
如图7所示，在第1变形例的功率模块PM中，与上述图2所示 的构造同样地，以将布线材料2的端部连接到接合材料5的形态，将 布线材料2连接于功率半导体元件4。
在该第1变形例的功率模块PM中，也以从接合材料5的端面起 遍及位于该端面和与该端面隔开距离的布线材料2的部位之间的布线 材料2的表面的方式，在接合材料5的端面以及布线材料2的表面与 密封树脂1之间连续地形成有间隙部3。由此，能够缓和功率半导体 元件4与密封树脂1之间的界面处的应力，使密封树脂1不易从功率 半导体元件4剥离，抑制剥离扩展。
(第2变形例)
如图8所示，在第2变形例的功率模块PM中，与上述图3所示 的构造同样地，具备2个功率半导体元件4，布线材料2利用接合材 料5被连接成跨过该2个功率半导体元件4之间。
在该第2变形例的功率模块PM中，也对2个功率半导体元件4 的各个形成有间隙部3。由此，能够缓和各个功率半导体元件4与密 封树脂1之间的界面处的应力。其结果，能够使密封树脂1不易从功 率半导体元件4剥离，抑制剥离扩展。
实施方式3
在这里，说明应用具备板状部和凸部的布线材料作为电连接到功 率半导体元件的布线材料的功率模块的第2例。
如图9所示，在功率模块PM中，布线材料2具有板状部和凸部 203。利用接合材料5将布线材料2的凸部203与形成于功率半导体 元件4的一个表面的电极电连接且机械连接。特别是，该布线材料2 的板状部和凸部203被一体地形成。
布线材料2例如通过铸造形成、或者通过实施研磨等处理形成。 即，凸部203是实心的。此外，这以外的结构与图1所示的功率模块 PM相同，所以对相同的部件附加相同的符号，除必要的情况之外， 不重复其说明。
在上述功率模块PM中，也以从接合材料5的端面起遍及位于该 端面和与该端面隔开距离的布线材料2的凸部203的规定部位之间的 布线材料2的表面的方式，在接合材料5的端面以及布线材料2的表 面与密封树脂1之间连续地形成有间隙部3。由此，能够缓和功率半 导体元件4与密封树脂1之间的界面处的应力，使密封树脂1不易从 功率半导体元件4剥离，抑制剥离扩展。
另外，对与和接合材料5的端面隔开距离的布线材料2的凸部 203的规定部位相比隔开更大距离的其他部位的表面202实施体现与 密封树脂1的锚固效应的处理。由此，能够有效地阻止剥离扩展。
接下来，说明上述功率模块PM的变形例。此外，在变形例中， 对与图9或者图1所示的功率模块PM的结构相同的部件附加相同的 符号，除必要的情况之外，不重复其说明。
(变形例)
如图10所示，在变形例的功率模块PM中，与上述图3所示的 构造同样地，具备2个功率半导体元件4，布线材料2利用接合材料 5被连接成跨过该2个功率半导体元件4之间。
在该变形例的功率模块PM中，也针对2个功率半导体元件4 的各个形成有间隙部3。由此，能够缓和各个功率半导体元件4与密 封树脂1之间的界面处的应力。其结果，能够使密封树脂1不易从功 率半导体元件4剥离，抑制剥离扩展。
实施方式4
在这里，说明应用具备板状部和凸部的布线材料作为电连接到功 率半导体元件的布线材料的功率模块的第3例。
如图11所示，在功率模块PM中，布线材料2具有平板状导电 体204和凸部203。利用接合材料5将布线材料2的凸部203与形成 于功率半导体元件4的一个表面的电极电连接且机械连接。特别是， 该布线材料2的平板状导电体204与凸部203被设为分体。
凸部203包括块状导电体10以及将该块状导电体10接合到平板 状导电体204的接合材料9。此外，这以外的结构与图1所示的功率 模块PM相同，所以对相同的部件附加相同的符号，除必要的情况之 外，不重复其说明。
接下来，说明具有上述布线材料2的功率模块PM的制造方法的 一个例子。首先，针对块状导电体10的全部六个面的各个面的至少 一部分实施镀镍(Ni)。由于镍被焊锡濡湿，所以能够将实施了镀镍 的块状导电体10的任意的面焊接到平板状导电体204。由此，能够利 用包括焊锡的接合材料9将块状导电体10固定于平板状导电体204。
接下来，利用接合材料5将与配置有接合材料9的面对置的面与 功率半导体元件4的电极电连接且机械连接。接下来，利用密封树脂 1对布线材料2以及功率半导体元件4等进行密封。此时，由于镍与 密封树脂1的粘合力弱，所以，实施了镀镍的块状导电体10的侧面 成为有意地使密封树脂1剥离而形成的间隙部3。由此制造功率模块 PM。
在上述功率模块PM中，也以从接合材料5的端面起遍及位于该 端面和与该端面隔开距离的布线材料2的凸部203的规定部位之间的 布线材料2的表面的方式，在接合材料5的端面以及布线材料2的表 面与密封树脂1之间连续地形成有间隙部3。由此，能够缓和功率半 导体元件4与密封树脂1之间的界面处的应力，使密封树脂1不易从 功率半导体元件4剥离，抑制剥离扩展。
另外，对与和接合材料5的端面隔开距离的布线材料2的凸部 203的规定部位相比隔开更大距离的布线材料2的板状部的表面202 实施体现与密封树脂1的锚固效应的处理。由此，能够有效地阻止剥 离扩展。
接下来，说明上述功率模块PM的变形例。此外，在变形例中， 对与图11或者图1所示的功率模块PM的结构相同的部件附加相同 的符号，除必要的情况之外，不重复其说明。
(变形例)
如图12所示，在变形例的功率模块PM中，与上述图3所示的 构造同样地具备2个功率半导体元件4，布线材料2利用接合材料5 被连接成跨过该2个功率半导体元件4之间。
在该变形例的功率模块PM中，也针对2个功率半导体元件4 的各个形成有间隙部3。由此，能够缓和各个功率半导体元件4与密 封树脂1之间的界面处的应力。其结果，能够使密封树脂1不易从功 率半导体元件4剥离，抑制剥离扩展。
实施方式5
在这里，说明应用具备板状部和凸部的布线材料作为电连接到功 率半导体元件的布线材料的功率模块的第4例。
如图13所示，在功率模块PM中，布线材料2具有板状部和凸 部203。利用接合材料5将布线材料2的凸部203与形成于功率半导 体元件4的一个表面的电极电连接且机械连接。
布线材料2的板状部和凸部203被一体地形成，特别是，将凸部 203与功率半导体元件4连接的接合材料5的端部(端面)从凸部203 向功率半导体元件4以描绘出底部坡度平缓的方式呈现圆角的形状。 此外，这以外的结构与图1所示的功率模块PM相同，所以对相同的 部件附加相同的符号，除必要的情况之外，不重复其说明。
接下来，说明上述功率模块PM的制造方法的一个例子。首先， 为了使接合材料5的端部呈现圆角的形状，在功率半导体元件4中与 接合材料5接合的电极401和在布线材料2中被接合材料5濡湿的部 位205的位置关系是重要的。在图14中示出示意性地表示该位置关 系的俯视图。
为了使接合材料5的端部呈现圆角的形状，首先，布线材料2 被接合材料5濡湿的部位205的面积需要比电极401的面积小。接下 来，该濡湿的部位205的区域需要位于电极401的区域内。图14示 出满足这样2个条件的电极401与濡湿的部位205的位置关系的一个例子。
在满足该条件的位置关系中，例如通过将如焊锡那样在工艺中临 时地处于液体状态的材料用作接合材料5，能够将接合材料5的端部 (端面)形成为圆角的形状。在将接合材料5的端部形成为圆角的形 状之后，利用密封树脂1对布线材料2以及功率半导体元件4等进行 密封，从而制造功率模块PM。
在上述功率模块PM中，接合材料5的端部呈现圆角的形状，从 而位于该部分的密封树脂1变成反映出该圆角的形状的带有圆形的形 状101。具有带有该圆形的形状101的密封树脂1的部分位于密封树 脂1与功率半导体元件4粘合的部位的附近。
由此，功率半导体元件4与密封树脂1之间的界面处的应力缓和 效果更高，能够抑制剥离从间隙部3向功率半导体元件4与密封树脂 1粘合的界面进一步扩展。
此外，关于在各实施方式中说明的功率模块，根据需要能够进行 各种组合。
本次公开的实施方式是示例，并不限制于此。本发明不是通过在 上面说明的范围而是通过权利要求书来表示，旨在包括与权利要求书 等同的含义以及范围内的全部变更。
产业上的可利用性
本发明能够有效地用于利用密封树脂对功率半导体元件等进行 密封的功率模块。

Claims (17)

1.一种功率模块，具有：
功率半导体元件，具有相互对置的第1表面以及第2表面，在所述第1表面形成有第1电极，在所述第2表面形成有第2电极；
布线材料，配置成与所述功率半导体元件的所述第1表面对置；
接合材料，形成为位于所述第1电极与所述布线材料之间，将所述第1电极与所述布线材料电连接且机械连接；
电路基板，配置成与所述功率半导体元件的所述第2表面对置，与所述第2电极电连接且机械连接；以及
密封树脂，对所述功率半导体元件、所述布线材料、所述接合材料以及所述电路基板进行密封，
以从位于所述功率半导体元件与所述布线材料之间的所述接合材料的端面起遍及位于所述端面和与所述端面隔开距离的所述布线材料的部位之间的所述布线材料的表面的方式，在所述接合材料的所述端面以及所述布线材料的所述表面与所述密封树脂之间具备间隙部，
以使所述布线材料与所述密封树脂的粘合力、所述功率半导体元件与所述密封树脂的粘合力、所述电路基板的与所述第2电极电连接的金属板与所述密封树脂的粘合力以及所述接合材料与所述密封树脂的粘合力中所述接合材料与所述密封树脂的粘合力最弱的方式选择所述接合材料，从而当使温度降低时，所述接合材料与所述密封树脂的界面由于热应力而优先剥离。
2.根据权利要求1所述的功率模块，其中，
在位于所述间隙部的所述布线材料的所述表面的部分形成有从镀膜、脱模剂以及焊锡中选择出的至少某一种。
3.根据权利要求2所述的功率模块，其中，
所述镀膜是Ni镀层。
4.根据权利要求2所述的功率模块，其中，
所述焊锡是包括Sn的无铅焊锡。
5.根据权利要求1所述的功率模块，其中，
位于所述间隙部的所述布线材料的所述表面的部分是平滑面。
6.根据权利要求1所述的功率模块，其中，
在与所述布线材料的所述部位相比与所述接合材料的所述端面隔开更大距离的所述布线材料的其他部位的表面的部分，具备所述密封树脂粘合于所述布线材料的粘合部。
7.根据权利要求6所述的功率模块，其中，
在位于所述粘合部的所述布线材料的所述表面的部分形成有从凹坑、开口以及贯通孔中选择出的至少某一种。
8.根据权利要求6所述的功率模块，其中，
位于所述粘合部的所述布线材料的所述表面的部分是粗糙化表面。
9.根据权利要求1所述的功率模块，其中，
所述布线材料是平板状。
10.根据权利要求1所述的功率模块，其中，
所述布线材料包括板状部和凸部，
所述凸部与所述第1电极利用所述接合材料来连接，
所述间隙部包括所述凸部的侧面。
11.根据权利要求10所述的功率模块，其中，
以使所述板状部突出的形态形成所述凸部。
12.根据权利要求10所述的功率模块，其中，
所述凸部是实心的。
13.根据权利要求10所述的功率模块，其中，
所述凸部与所述板状部被一体地形成。
14.根据权利要求10所述的功率模块，其中，
所述凸部与所述板状部被设为分体，
所述凸部与所述板状部接合。
15.根据权利要求14所述的功率模块，其中，
在所述凸部的至少一部分的表面实施镀镍。
16.根据权利要求10所述的功率模块，其中，
所述接合材料的所述端面从所述布线材料至所述第1电极以底部坡度平缓扩展的形态呈现圆角的形状。
17.根据权利要求1所述的功率模块，其中，
所述接合材料由焊锡形成，
所述密封树脂由环氧树脂形成。
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