CN101405863A - 使用涂覆有金属的导线的半导体装置及电部件制造 - Google Patents

使用涂覆有金属的导线的半导体装置及电部件制造 Download PDF

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CN101405863A
CN101405863A CNA2007800098366A CN200780009836A CN101405863A CN 101405863 A CN101405863 A CN 101405863A CN A2007800098366 A CNA2007800098366 A CN A2007800098366A CN 200780009836 A CN200780009836 A CN 200780009836A CN 101405863 A CN101405863 A CN 101405863A
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lead
metal
bonding
nickel
wire
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CN101405863B (zh
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李相道
权溶锡
曹斌
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Fairchild Semiconductor Corp
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Fairchild Semiconductor Corp
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Abstract

本发明的装置包括半导体电路小片，所述半导体电路小片附接到裸铜引线框架且通过涂覆有金属材料的金属导线电耦合至引线。所述装置的作用将类似于其中引线框架涂覆有其它金属材料的装置，但因以镀敷导线来代替镀敷引线框架而具有较低的成本。所述导线可以是金或铝。当所述导线是金时，涂层可以是银或其它适合的金属材料。当所述导线是铝时，涂层可以是镍、钯或其它适合的金属。

Description

使用涂覆有金属的导线的半导体装置及电部件制造
相关申请交叉参考案
此申请案主张2006年3月27日申请的序号为60/786,259的美国临时专利申请案的权益，所述申请案以引用的方式并入本文中。
技术领域
本发明涉及经封装半导体装置，且更具体来说，涉及具有涂覆有用于导线键合的金属材料的金属导线的半导体装置且涉及将经涂覆导线用于电子部件的连接。
背景技术
一般来说，经封装半导体装置包括附接到镀敷有其它金属(例如镍或银)的铜引线框架的半导体电路小片。接着，通过将一般由铝、金或铜制成的键合导线键合到电路小片上的导线键合部位并在其第二端上键合到对应引线而将电路小片连接到引线。举例来说，铝导线在其第一端上键合到电路小片上的源极接触件，且其第二端键合到源极引线。此后，将装置封装，以使所述引线通过封装材料而暴露，从而将经封装半导体装置连接到所述经封装半导体装置置于其中的电子装置。
由于铜是相当廉价的金属，因此引线框架一般是由基本等级的铜制成，且接着用其它金属(例如镍或钯，或甚至两者)加以镀敷。已知镍及钯具有与铝的可靠金属间连接。因为银具有与金的可靠金属间连接，因此此金属也用来镀敷铜引线框架。然而，举例来说，已知铝与铜不具有可靠连接。铝和铜会形成是脆弱的且在某些温度下降低剪切强度的数种金属间相，所述金属间相会增加脆弱的铜铝金属间相的生长，且因此导致导线或键合断裂。
举例来说，铝与镍是可靠的金相系统，因为此系统不容易受到克根达(Kirkendall)空洞或电化腐蚀的影响。此外，镍与铜能耐硫酸与氢氟酸。因此，在此项技术中需要的是生产具有成本竞争力的产品。此外，需要的是使用能更有效率地减小成本的金属来生产产品，同时仍能制造出具有可靠金相系统的装置。
发明内容
本发明的实施例包含半导体装置，例如二极管、金属氧化物半导体场效应晶体管、可控硅整流器、绝缘栅双极晶体管及集成电路。所述半导体装置具有用于接纳键合导线的一个或一个以上键合垫。在本发明的一个实施例中，所述半导体装置是具有控制区域、第一端子区域及第二端子区域的晶体管，其中所述第二端子区域附接到引线框架及及经涂覆导线，以将所述半导体电路小片从其第一端子区域连接到所述引线框架的第一端子引线。将所述电路小片连接到所述引线的导线可以是金或铝且涂覆有金属或合金，例如，对金导线来说是银，且关于铝导线是镍或钯。对导线进行涂覆以消除镀敷引线框架的需要，借此减小制造经封装半导体的成本。
此外，根据本发明制造半导体装置的方法包括：提供半导体装置，在其第一表面上具有第一端子区域；提供具有电路小片附接垫及引线的引线框架；以及将涂覆有金属或合金的金属导线键合到所述电路小片及对应的引线。在本发明的另一方面中，所述键合步骤包含超声波或热超声键合方法。在本发明的又一方面中，所述导线是涂覆有适合金属导线的金导线或铝导线，例如用于金导线是银，且用于铝导线的是镍或钯。
本发明的优点是消除镀敷裸铜引线框架并借此显著减小制造成本的能力。取而代之是涂覆有适合金属的导线。
本发明的另一优点是通过用先前用来镀敷铜引线框架的金属涂覆导线，而使系统的可靠度没有实质损失。换句话说，由于将用于镀敷引线框架的相同金属用来涂覆铝导线，因此仍保持相同的金属间相。因此，所述金相系统是与此项技术中称为可靠系统相称的金相系统，且不易于发生像其它金相系统(例如铝与铜)那样的问题或可能故障。
附图说明
图1是根据本发明的实施例的经涂覆导线的截面图；
图2是使用图1中所示的经涂覆导线部分接线到引线框架的半导体装置的俯视图；及
图3是具有额外封装引线及经涂覆导线的图2的截面图。
在所有数个视图中，对应的参考字符指示对应的部件。本文所列的实例图解说明本发明的实施例，而不应被认为是以任何方式限制本发明的范围。
具体实施方式
图1显示经涂覆的铝导线103。铝导线101涂覆有金属材料102且用于在封装装置期间形成半导体电路小片与引线之间的电连接，而且更常用于连接电部件。导线101可以是纯铝，但也可以是以硅或镁作为强化机构的铝合金。涂层102可以是铜可相容的金属，例如镍或钯。
通过无电镀敷或电镀将涂层102镀敷到铝导线101上。对于两种工艺来说，首先通过清洁导线的表面以改进金属涂层与铝导线101表面的附着力来准备用于镀敷的铝导线。此工艺可通过此项技术中已知的方法来实现，例如使用清洁剂或溶剂来移除可影响金属涂层102附着到导线101的能力的油脂、环境污染物、氧化物及其它不需要的材料。
关于无电镀敷，可通过使用用于金属阳离子还原法的化学催化剂以基于水的溶液将金属沉积到导线上将金属涂层102施加到导线上。一般来说，所述溶液包括含有所述金属的盐、还原剂及用以使金属保持在溶液中的络合剂。对于电镀来说，可通过使电流通过含有金属离子的溶液将涂层材料102施加到铝导线101上。在浴槽中，铝导线101是阴极，借此将金属离子吸引到导线101。金属离子被沉积在导线101上，以在导线101上形成涂层102。一旦在铝导线101上沉积了金属涂层102，便将经涂覆导线103漂洗并使其干燥。
铝导线101可涂覆有适合的铜可相容金属，例如镍或钯。这些材料(铜与铝、镍、Al-Ni导线，或铜与铝、钯、Al-Pd导线)形成可靠的金相系统。举例来说，镍与铝之间的金属间相比较不易受克根达空洞或电化腐蚀的影响。虽然这些材料是可靠的，但金属102在导线101上的沉积是重要的工艺，因为添加不需要的材料(例如，导致表面氧化的磷)可减小系统的可靠度。
参考图2，半导体装置200是键合到引线框架202的电路小片且在电路小片200的一个表面上具有源极区域204和栅极区域211，而在电路小片200的相对表面上具有漏极区域(图2中未显示)。同样，半导体电路小片200的源极区域204具有铝涂层205。此外，引线框架202是具有电路小片附接垫206、源极封装引线207及栅极封装引线208的裸铜。同样，使用系杆209将电路小片附接垫206连接到引线框架，所述系杆将电路小片附接垫206连接到在引线框架202的轨道之间延伸的横杆。电路小片200可用焊料膏附接到电路小片附接垫206。
将经涂覆的铝导线103键合到半导体电路小片200的源极区域204中的一者及铜源极封装引线207两者。使用超声波或热超声键合方法键合经涂覆导线103。使用这些键合方法中的任一种方法，所得键合209、210会形成楔形形状，因此称为楔形键合。超声波导线键合是使用超声波能量形成楔形键合的低温工艺。热超声导线键合需要高温及超声波能量以形成导线与其所键合到的材料之间的键合。
由于半导体电路小片200具有铝接触件且导线103具有涂覆有适合的铜可相容金属(例如镍或钯)的铝芯，因此半导体电路小片200与经涂覆导线103之间的键合是可靠的。在一端处，经涂覆导线103的铝芯在电路小片200上与铝接触件204形成可靠的键合。在键合导线的另一端处，铜-铝-镍金相系统在经涂覆导线103与封装引线207之间形成可靠键合。将导线103键合到裸铜封装源极引线207，以形成另一楔形键合210。铝与铜并不像镍或钯与铜一样地可靠，且因此通常用镍镀敷铜引线框架以确保导线与引线框架之间的可靠键合。然而，经涂覆导线103也提供与裸铜引线框架的可靠键合。
通常将镍镀敷在裸铜引线框架上，且接着使用铝导线将半导体电路小片电连接到引线。尽管铝与镍是可靠系统，但用镍镀敷裸铜引线框架的成本可能相当高。本发明通过在铝导线103上使用镍涂层提供可靠且较低成本的一个或一个以上实施例，因为像导线与引线框架之间那样需覆盖的表面积较小。因此能产生相同的结果但费用相当低。
图3是图2中所示的装置的截面图，其中所添加的封装引线220通过另一经涂覆导线203连接到电路小片附接垫206。半导体电路小片200是键合到裸铜引线框架202的电路小片，以使得例如通过焊料212将漏极区域214附接到电路小片附接垫206。如图3中所示，经涂覆的铝导线103是键合到半导体电路小片200及裸铜封装源极引线207两者的楔形件。
制造装置的方法包括提供具有电路小片附接垫以及从平行轨道延伸到电路小片垫的多个引线的裸铜引线框架及半导体电路小片。使用焊料膏将半导体电路小片的漏极区域附接到引线框架中的电路小片附接垫。此后，通常首先将经涂覆导线键合到半导体电路小片上的电路小片垫，且接着键合到引线框架的适合引线。接着，切断所述导线，此工艺称为“前向键合”。然而，所述导线可首先键合到引线框架的引线，接着键合到电路小片并切断。在将导线键合到电路小片及引线之后，封装并单个化装置。
一般来说，用于超声波及热超声键合方法的导线有三种类型。用于此类型导线键合的普通导线为铜、铝及金。这些导线可以是纯金属，但大多数是与其它材料形成合金以提供导线强度。一般来说，铜导线及铝导线可用于超声波或热超声键合方法两者。金导线通常用于热超声键合方法。
超声波键合在导线与待键合基板之间产生楔形键合。超声波键合是在形成键合时需要使用超声波能量的低温低压键合方法。具体来说，待键合到表面或装置的导线是以与水平面成30到60°的角度馈入到称为楔形键合工具的导线键合工具中。将导线订在第一键合部位上，且用压力及超声波能量将导线键合到所述部位。将键合工具抬高并移动到第二键合部位，以使导线形成从第一部位到第二部位的环形状。在形成第二键合之后，便切断导线。
热超声键合是需要超声波能量的高温低压键合工艺。同样，将导线以一角度馈入到楔形键合工具中。将导线保持到第一键合部位，半导体电路小片或源极引线。用压力与热以及超声波能量将导线订在键合部位以形成键合。所施加的热通常在100到150℃的范围内，但在金导线的情况下可高达250℃。热导致导线及其所键合到材料发生塑性变形，从而形成金属间连接。
使用经涂覆导线以较低成本将半导体电路小片电连接到引线还可应用于其它装置。经涂覆导线还可用于连接如图3中所示的电部件。举例来说，可通过涂覆有钯或镍的铝导线电连接两个裸铜部件，因为这些结合是可靠的金属间连接。
尽管前述部分是就经涂覆的铝导线加以解释的，但其它实施例可包括涂覆有银的金导线。金、银及铜形成可在高温下执行的另一可靠系统。因此，本发明的另一实施例可包括使用经涂覆导线将半导体电路小片连接到裸铜引线框架，例如使用涂覆有银或其它适合金属材料的金导线。
已经结合垂直金属氧化物半导体场效应晶体管晶体管描述了前面的实施例。然而，所属领域的技术人员将了解，可以其它晶体管及装置来代替。举例来说，可用双极晶体管来代替所述金属氧化物半导体场效应晶体管，其中射极区域及接触件对应于源极区域及接触件，基极区域及接触件对应于栅极区域及接触件，且集极区域及接触件对应于漏极区域及漏极接触件。其它半导体装置包括且不限于集成电路、二极管、可控硅整流器或绝缘栅双极晶体管。
尽管已经参考优选实施例描述了本发明，但所属领域的技术人员应了解，可对本发明进行各种改变，且可以等效物来替代本发明的元件，而此并不背离本发明的范围。另外，可对本发明的教示进行许多修改以适应特定情况或材料，而此并不背离本发明的范围。
因此，并不打算将本发明局限于揭示为预期用于实施本发明的最佳模式的特定实施例，而是本发明将包括属于所附权利要求书的范围及精神内的所有实施例。

Claims (20)

1、一种半导体装置，其包含：
a.半导体电路小片，其具有包含控制及第一端子区域的第一表面及包含第二端子区域的第二表面；
b.引线框架，其包含电路小片附接垫、控制引线及端子引线；及
c.导线，其包含第一金属的芯及第二金属的涂层。
2、如权利要求1所述的装置，其中所述第一金属包括铝、铝合金、金或金合金。
3、如权利要求1所述的装置，其中所述第二金属包括镍、钯或银。
4、如权利要求1所述的装置，其中所述半导体电路小片选自由二极管、金属氧化半导体场效应晶体管、可控硅整流器、集成电路及绝缘栅双极晶体管组成的群组。
5、如权利要求1所述的装置，其中所述半导体装置进一步包含封装材料。
6、一种制造半导体装置的方法，其包含以下步骤：
a.提供：半导体电路小片，其具有第一及第二表面，所述半导体电路小片包含在所述电路小片的所述第一表面上的控制区域及第一端子区域及在所述电路小片的所述第二表面上的第二端子区域；引线框架，其具有电路小片附接垫以及控制及端子引线；及导线，其具有第一金属的芯及第二金属的涂层；
b.将所述电路小片附接到所述引线框架的所述电路小片附接垫；
c.将所述导线附接到所述半导体电路小片且附接到所述引线框架的引线；及
d.封装所述电路小片、电路小片附接垫、引线及导线。
7、如权利要求6所述的方法，其中所述导线的所述第一金属包括铝或铝合金。
8、如权利要求7所述的方法，其中所述第二金属选自由镍或钯组成的群组。
9、如权利要求8所述的方法，其中所述附接方法包括热超声键合。
10、如权利要求8所述的方法，其中所述键合步骤为超声波键合。
11、如权利要求6所述的方法，其中所述第一金属包括金或金合金。
12、如权利要求11所述的方法，其中所述第二金属包括银。
13、如权利要求12所述的方法，其中所述键合步骤为热超声键合。
14、一种连接电子部件的方法，其包含以下步骤：
a.提供第一及第二电子部件以及包含第一金属的芯及第二金属的涂层的导线；
b.将所述导线附接到所述第一电子部件；及
c.将所述导线附接到所述第二电子部件。
15、如权利要求14所述的方法，其中所述第一金属包括铝或铝合金，所述第二金属选自由镍及钯组成的群组，且所述附接方法包括热超声键合。
16、如权利要求14所述的方法，其中所述第一金属包括铝或铝合金，所述第二金属选自由镍及钯组成的群组，且所述附接方法包括超声波键合。
17、如权利要求14所述的方法，其中所述第一金属包括金或金合金，所述第二金属包括银，且所述附接方法包括热超声键合。
18、一种半导体电路小片键合导线，其包含第一金属的芯及第二金属的涂层。
19、如权利要求18所述的导线，其中所述第一金属是铝、铝合金、金或金合金。
20、如权利要求18所述的导线，其中所述第二金属是镍、钯或银。
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TW200802773A (en) 2008-01-01
WO2007112396A2 (en) 2007-10-04
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US8084870B2 (en) 2011-12-27
CN101405863B (zh) 2010-07-21
US20120146204A1 (en) 2012-06-14

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