JP2005064532A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2005064532A JP2005064532A JP2004301278A JP2004301278A JP2005064532A JP 2005064532 A JP2005064532 A JP 2005064532A JP 2004301278 A JP2004301278 A JP 2004301278A JP 2004301278 A JP2004301278 A JP 2004301278A JP 2005064532 A JP2005064532 A JP 2005064532A
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- Prior art keywords
- inner lead
- wire
- lead
- pellet
- electrode pad
- Prior art date
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/11—Device type
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- H—ELECTRICITY
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Abstract
【解決手段】3端子ラジアルリード形樹脂封止パッケージのパワーMOSFET45は、ペレット10と、樹脂封止体44の下端面に突出された3本のアウタリード33、34、35と、3本のインナリード36、37、38とを備え、中央の第1インナリード36の先端に形成されたタブ40にペレット10がボンディング層41でボンディングされている。第2インナリード37とゲート用電極パッド19との間にはゲート用ワイヤ42が橋絡され、タブ40の一方の長辺に沿って配設された第3インナリード38とソース用電極パッド20との間には幅の広い大電流用ワイヤ43Bが橋絡されている。大電流を幅の広い大電流用ワイヤで通電できるため、外部抵抗のうち殆どを占めるワイヤの電気抵抗を大幅に低減でき、全体の抵抗を低減できる。
【選択図】図7
Description
このような高出力のパワートランジスタのパッケージとしても、3端子ラジアルリード形樹脂封止パッケージが使用されている。すなわち、3端子ラジアルリード形パッケージを備えているパワートランジスタは、パワートランジスタ回路が作り込まれ小形の平板形状に形成された半導体ペレットと、この半導体ペレットに各ワイヤによって電気的に接続された3本のインナリードと、3本のインナリードにそれぞれ連結された3本のアウタリードと、前記半導体ペレット、前記インナリード群および前記ワイヤ群を樹脂封止した樹脂封止体とを備えており、3本のアウタリードが樹脂封止体の下端面に互いに平行に整列されている。
ここで、内部抵抗分が大きい段階においては外部抵抗分が問題になることは殆どなかった。ところが、技術革新が進展し、内部抵抗分が小さく改善されて外部抵抗分の大きさが全体の50%程度を越える段階になると、外部抵抗分を無視することができない状況になる。
前記インナリード群のうち大電流用インナリードには幅の広い接続部の一端が接続されて、この接続部の他端は前記半導体ペレットの大電流用電極パッドに接続されていることを特徴とする。
大電流が流れる大電流用電極パッドと大電流用インナリードとの間に幅の広い接続部を橋絡することにより、大電流を幅の広い接続部を通じて流すことができるため、外部抵抗のうち殆どを占める接続部における電気抵抗を大幅に低減することができ、半導体装置全体としての抵抗を低減させることができる。
そして、以上のように構成されたトランジスタ45は以下に述べるトランジスタの製造方法によって製造されている。
便宜上、図示および以下の説明は一単位について行われている。
続いて、ワイヤ・ボンディング工程において、超音波熱圧着式ワイヤボンディング装置等のワイヤボンディング装置(図示せず)が使用されて、ペレット10のゲート用電極パッド19およびソース用電極パッド20と、第2インナリード37および第3インナリード38との間にはゲート用ワイヤ42および大電流用ワイヤとしての複数本のソース用ワイヤ43が図4に示されているように橋絡される。
続いて、ペレット10のソース用電極パッド20にはソース用ワイヤ43の一端がボール・ボンディングされるとともに、ソース用ワイヤ43の他端が第3インナリード38に第2ボンディングされる。ソース用ワイヤ43は複数本(図示例では5本)が連続して、ソース用電極パッド20に順次ワイヤ・ボンディングされて行く。このとき、ソース用電極パッド20が一連の長方形に形成されているため、多少の位置ずれは吸収することができるし、ソース用ワイヤ43の本数や線径等の仕様の変更に対処することができる。
また、ゲート用ワイヤ42の橋絡方向と、ソース用ワイヤ43群の橋絡方向とが異なっているため、ゲート用ワイヤ42側のワイヤ・ボンディング作業と、ソース用ワイヤ43側のワイヤ・ボンディング作業は2箇所のステーションでそれぞれ実施してもよい。このように2箇所のステーションでゲート用ワイヤ42に対するワイヤ・ボンディング作業と、ソース用ワイヤ43に対するワイヤ・ボンディング作業が実施される場合でも、多連リードフレーム30の各リードフレーム31において両方のワイヤ・ボンディング作業が同時に進行するので、作業時間の増加は起きない。
この樹脂封止体44によって、ペレット10、タブ40、ボンディング層41、ゲート用ワイヤ42、ソース用ワイヤ43群、第1インナリード36、第2インナリード37および第3インナリード38が樹脂封止され、樹脂封止体44の下端面から第1アウタリード33、第2アウタリード34および第3アウタリード35が平行に突出された状態になる。
1) 大電流が流れるソース用電極パッドと大電流用インナリードである第3インナリードとの間に複数本のソース用ワイヤを橋絡することにより、大電流を複数本のソース用ワイヤを通じて流すことができるため、外部抵抗のうち殆どを占めるワイヤにおける電気抵抗を大幅に低減することができ、トランジスタ全体としての抵抗を低減させることができる。
Claims (3)
- 電子回路要素が作り込まれ小形の平板形状に形成された半導体ペレットと、この半導体ペレットに各ワイヤによって電気的に接続された複数本のインナリードと、これらインナリードにそれぞれ連結された複数本のアウタリードと、前記半導体ペレット、前記インナリード群および前記ワイヤ群を封止した封止体とを備えており、前記アウタリード群が前記封止体の一辺に配列されている半導体装置において、
前記インナリード群のうち大電流用インナリードには幅の広い接続部の一端が接続されて、この接続部の他端は前記半導体ペレットの大電流用電極パッドに接続されていることを特徴とする半導体装置。 - 前記電子回路要素が作り込まれ平板形状に形成された半導体ペレットは、パワーMOSFETが作り込まれた半導体ペレットであることを特徴とする請求項1に記載の半導体装置。
- 前記大電流用インナリードに接続された接続部の他端は、パワーMOSFETが作り込まれた半導体ペレットのソースまたはドレインに接続されていることを特徴とする請求項1または2に記載の半導体装置。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008166622A (ja) * | 2006-12-29 | 2008-07-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2009182305A (ja) * | 2008-02-01 | 2009-08-13 | Sanyo Electric Co Ltd | 半導体装置 |
JP2009531870A (ja) * | 2006-03-27 | 2009-09-03 | フェアチャイルド・セミコンダクター・コーポレーション | 金属コーティングワイヤを用いた半導体デバイス及び電気部品の製造 |
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2004
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009531870A (ja) * | 2006-03-27 | 2009-09-03 | フェアチャイルド・セミコンダクター・コーポレーション | 金属コーティングワイヤを用いた半導体デバイス及び電気部品の製造 |
JP2008166622A (ja) * | 2006-12-29 | 2008-07-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP4597118B2 (ja) * | 2006-12-29 | 2010-12-15 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2009182305A (ja) * | 2008-02-01 | 2009-08-13 | Sanyo Electric Co Ltd | 半導体装置 |
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