JP4698225B2 - ドレインクリップを備えた半導体ダイパッケージ - Google Patents
ドレインクリップを備えた半導体ダイパッケージ Download PDFInfo
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- JP4698225B2 JP4698225B2 JP2004541558A JP2004541558A JP4698225B2 JP 4698225 B2 JP4698225 B2 JP 4698225B2 JP 2004541558 A JP2004541558 A JP 2004541558A JP 2004541558 A JP2004541558 A JP 2004541558A JP 4698225 B2 JP4698225 B2 JP 4698225B2
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Description
101 ドレインクリップ
101(a) 主表面
102 成形材料
103 ソースリード構造
103(a) 主表面
106 結合バー領域
107 ドレインリード
108 半導体ダイ
111 ソースリード
112 ゲートリード
113 隣接表面
115 はんだバンプ
116、118 共晶はんだペースト
117、120 屈曲部
171 ゲートリード構造
177 ドレインリード構造
Claims (6)
- (a)第1表面、第2表面、及び前記第1表面にゲート領域とソース領域とを有し前記第2表面にドレイン領域を有する垂直パワーMOSFETを備えた半導体ダイと、
(b)主表面を有し且つ前記ドレイン領域に電気的に結合されているドレインクリップと、
(c)前記ゲート領域に電気的に結合されているゲートリードと、
(d)前記ソース領域に電気的に結合されているソースリードと、
(e)前記半導体ダイを封入する非導電性成形材料と、からなる半導体ダイパッケージであって、
前記ドレインクリップの前記主表面が前記非導電性成形材料を介して露出しており、
前記非導電性成形材料が頂部表面と底部表面とを有しており、前記頂部表面が前記ドレインクリップの前記主表面と実質的に同一平面上にあり、前記底部表面が前記ゲートリードの表面及び前記ソースリードの表面と実質的に同一平面上にあることを特徴とする半導体ダイパッケージ。 - 前記半導体ダイパッケージが更に前記ドレインクリップの端部に電気的に結合したドレインリードを有しており、前記ドレインリードの少なくとも表面が前記ゲートリードの表面及び前記ソースリードの表面と実質的に同一平面上にあることを特徴とする請求項1記載の半導体ダイパッケージ。
- (a)第1表面、第2表面、及び前記第1表面にゲート領域とソース領域とを有し前記第2表面にドレイン領域を有する垂直パワーMOSFETを備えた半導体ダイと、
(b)主表面を有し且つ前記ドレイン領域に電気的に結合されているドレインクリップと、
(c)前記ゲート領域に電気的に結合されているゲートリードと、
(d)前記ソース領域に電気的に結合されているソースリードと、
(e)前記半導体ダイを封入する非導電性成形材料と、からなる半導体ダイパッケージであって、
前記ドレインクリップの前記主表面が前記非導電性成形材料を介して露出しており、
前記ソースリードが主表面を有したソースリード構造の一部分であり、前記非導電性成形材料が頂部表面と底部表面とを有しており、前記頂部表面が前記ドレインクリップの前記主表面と実質的に同一平面上にあり、前記底部表面が前記ゲートリードの表面、前記ソースリードの表面、及び前記ソースリード構造の前記主表面と実質的に同一平面上にあり、前記ソースリード構造の前記主表面及び前記ドレインクリップの前記主表面が前記半導体ダイパッケージの外表面を形成することを特徴とする半導体ダイパッケージ。 - 前記ゲートリード及び前記ソースリードは、前記成形材料の側面をはみ出して延在していないことを特徴とする請求項1記載の半導体ダイパッケージ。
- 前記ゲートリード及び前記ソースリードは、前記成形材料の側面をはみ出して延在していないことを特徴とする請求項3記載の半導体ダイパッケージ。
- 前記ソースリード構造の前記主表面は、突出部分の一部であることを特徴とする請求項3記載の半導体ダイパッケージ。
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- 2003-09-17 CN CNB038232154A patent/CN100362656C/zh not_active Expired - Fee Related
- 2003-09-17 WO PCT/US2003/029142 patent/WO2004032232A1/en active Application Filing
- 2003-09-17 DE DE10393232T patent/DE10393232T5/de not_active Ceased
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JP2011097090A (ja) | 2011-05-12 |
TWI319905B (en) | 2010-01-21 |
DE10393232T5 (de) | 2005-09-29 |
TW200410375A (en) | 2004-06-16 |
AU2003270700A1 (en) | 2004-04-23 |
WO2004032232A1 (en) | 2004-04-15 |
JP2006501675A (ja) | 2006-01-12 |
US6777800B2 (en) | 2004-08-17 |
CN1685504A (zh) | 2005-10-19 |
US20040063240A1 (en) | 2004-04-01 |
CN100362656C (zh) | 2008-01-16 |
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