JP6386746B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6386746B2 JP6386746B2 JP2014035891A JP2014035891A JP6386746B2 JP 6386746 B2 JP6386746 B2 JP 6386746B2 JP 2014035891 A JP2014035891 A JP 2014035891A JP 2014035891 A JP2014035891 A JP 2014035891A JP 6386746 B2 JP6386746 B2 JP 6386746B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resin
- circuit board
- power device
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
本発明の実施形態1に係る半導体装置の概要について、図1及び図2を参照しながら詳細に説明する。図1は、本発明の実施形態1に係る半導体装置の概略平面図である。また、図2は、本発明の実施形態1に係る半導体装置のA−B断面図である。
本発明の実施形態1の変形例に係る半導体装置について、図5乃至10を参照しながら詳細に説明する。まずは、図5を用いて、実施形態1の変形例に係る半導体装置の構造について説明する。次に、図6乃至10を用いて、実施形態1の変形例に係る半導体装置の製造方法について説明する。なお、実施形態1の変形例に係る半導体装置100の平面図は図1と同様であるので、図1を参照して説明する。
本発明の実施形態2に係る半導体装置100の概要について、図11乃至14を参照しながら詳細に説明する。まずは、図11を用いて、実施形態2に係る半導体装置の構造について説明する。次に、図12乃至14を用いて、実施形態2に係る半導体装置の製造方法について説明する。なお、実施形態2に係る半導体装置100の平面図は図1と同様であるので、図1を参照して説明する。
本発明の実施形態3に係る半導体装置100の概要について、図15を参照しながら詳細に説明する。なお、実施形態3に係る半導体装置100の平面図は図1と同様であるので、図1を参照して説明する。図15は、本発明の実施形態3に係る半導体装置のA−B断面図である。図15は、図11と類似しているが、露出した放熱部材140の一部が第2樹脂180より突出している点において、図11とは相違する。つまり、第2樹脂180は、放熱部材140の一部を露出するように、リードフレーム110、回路基板120、パワーデバイス130、及び放熱部材140を覆っている。ここで、放熱部材140の一部の表面及び側面は露出されている。
本発明の実施形態3の変形例に係る半導体装置100の概要について、図16乃至18を参照しながら詳細に説明する。図16は、本発明の実施形態3の変形例1に係る半導体装置のA−B断面図である。図17は、本発明の実施形態3の変形例2に係る半導体装置のA−B断面図である。図18は、本発明の実施形態3の変形例3に係る半導体装置のA−B断面図である。図19は、本発明の実施形態3の変形例4に係る半導体装置のA−B断面図である。
本発明の実施形態4に係る半導体装置100の概要について、図20及び21を参照しながら詳細に説明する。図20は、本発明の実施形態4に係る半導体装置の概略平面図である。また、図21は、本発明の実施形態4に係る半導体装置のC−D断面図である。
本発明の実施形態4の変形例1に係る半導体装置100の概要について、図22を参照しながら詳細に説明する。図22は、本発明の実施形態4の変形例1に係る半導体装置の概略平面図である。
本発明の実施形態4の変形例2に係る半導体装置100の概要について、図23を参照しながら詳細に説明する。図23は、本発明の実施形態4の変形例2に係る半導体装置の概略平面図である。
本発明の実施形態5に係る半導体装置100の概要について、図24及び25を参照しながら詳細に説明する。図24は、本発明の実施形態5に係る半導体装置の概略平面図である。また、図25は、本発明の実施形態5に係る半導体装置のE−F断面図である。
110:リードフレーム
112:外部ソース端子
114:外部ドレイン端子
116:外部ゲート端子
118:導電性接着部材
120:回路基板
122:ドレイン端子用パッド
124:ゲート端子用パッド
128:バンプ
130:パワーデバイス
138、139:高熱伝導接着部材
140:放熱部材
141:放熱部材140の一部の表面
145、146:流路
150:封止樹脂
170:第1樹脂
180:第2樹脂
181、182:成型金型
183:開口部
184:リリースフィルム
190:他の装置の部品
200:横型スイッチング素子
210:半導体基板
220:ソース電極
221:ソース端子
230:ドレイン電極
231、331:ドレイン端子
240、340:ゲート絶縁膜
250、350:ゲート電極
251、351:ゲート端子
300:縦型スイッチング素子
310:半導体基板、N型エピタキシャル成長層
320:P型注入層
321:ソース端子
325:N型注入層、ソース電極
330:N型SiC基板、ドレイン電極
401:第1接続点
402:第2接続点
403:第3接続点
Claims (16)
- リードフレームと、
前記リードフレーム上に配置された回路基板と、
スイッチング素子を有し、前記回路基板にバンプを介して実装されたパワーデバイスと、
前記パワーデバイスに接続された放熱部材と、
を有し、
前記放熱部材は、前記リードフレームに接続され、
前記リードフレームの前記回路基板が配置された側とは反対側は外部に露出されており、
前記パワーデバイス及び前記放熱部材は、前記パワーデバイスと前記放熱部材との間で電気的に接続され、
前記放熱部材及び前記リードフレームは、前記放熱部材と前記リードフレームとの間で電気的に接続されていることを特徴とする半導体装置。 - 前記リードフレーム及び前記回路基板は、前記リードフレームと前記回路基板との間で電気的に接続されていることを特徴とする請求項1に記載の半導体装置。
- 前記パワーデバイスのソース端子は、前記リードフレームを介して、外部機器に接続される外部ソース端子に接続され、
前記パワーデバイスのドレイン端子及びゲート端子の各々は、前記回路基板に設けられた配線を介して、外部機器に接続される外部ドレイン端子及び外部ゲート端子に接続されることを特徴とする請求項1又は2に記載の半導体装置。 - 前記回路基板は、多層配線基板であることを特徴とする請求項1乃至3のいずれか一に記載の半導体装置。
- 前記回路基板は、容量素子、抵抗素子、インダクタ素子、ダイオード素子、及びスイッチング素子を有することを特徴とする請求項1乃至4のいずれか一に記載の半導体装置。
- 前記回路基板は、入力された入力信号に対して、前記入力信号とは異なる出力信号を出力する回路を有することを特徴とする請求項1乃至5のいずれか一に記載の半導体装置。
- 前記リードフレーム、前記回路基板、前記パワーデバイス、及び前記放熱部材を覆う封止樹脂をさらに有することを特徴とする請求項1乃至6のいずれか一に記載の半導体装置。
- 前記放熱部材の一部を露出するように、前記リードフレーム、前記回路基板、前記パワーデバイス、及び前記放熱部材を覆う封止樹脂をさらに有し、
前記放熱部材の前記一部の露出された表面と前記封止樹脂の表面とは、同一面であることを特徴とする請求項1乃至6のいずれか一に記載の半導体装置。 - 前記放熱部材の一部を露出するように、前記リードフレーム、前記回路基板、前記パワーデバイス、及び前記放熱部材を覆う封止樹脂をさらに有し、
前記放熱部材の前記一部の表面及び側面は、露出されていることを特徴とする請求項1乃至6のいずれか一に記載の半導体装置。 - 前記放熱部材の前記一部の表面は、凹凸形状を有することを特徴とする請求項8又は9に記載の半導体装置。
- 前記放熱部材の前記一部に、流路が設けられていることを特徴とする請求項8又は9に記載の半導体装置。
- 前記封止樹脂は、第1樹脂と第2樹脂とを含み、
前記第1樹脂は、前記回路基板と前記パワーデバイスとの間に配置され、
前記第2樹脂は、前記第1樹脂を覆うように配置されることを特徴とする請求項7乃至11のいずれか一に記載の半導体装置。 - 前記第1樹脂の熱膨張係数は、前記第2樹脂の熱膨張係数に比べて前記バンプの熱膨張係数に近いことを特徴とする請求項12に記載の半導体装置。
- 前記第1樹脂の熱伝導率は、前記第2樹脂の熱伝導率に比べて大きいことを特徴とする請求項12又は13に記載の半導体装置。
- 前記放熱部材は、前記パワーデバイスを基準として異なる方向に延びており、前記異なる方向において前記リードフレームに接続されることを特徴とする請求項1乃至14のいずれか一に記載の半導体装置。
- 前記放熱部材は、少なくとも前記回路基板の各々の回路を覆うことを特徴とする請求項1乃至15のいずれか一に記載の半導体装置。
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US15/640,071 US10236231B2 (en) | 2014-02-26 | 2017-06-30 | Semiconductor device |
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