JP2006156479A - パワー半導体装置 - Google Patents
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Abstract
【解決手段】 パワー半導体素子の縦横比を1.5以上にする。これにより、周囲に対する放熱性を高めて、電流密度の高いパワー半導体素子でも効率のよい温度領域で動作させることが可能となる。さらに、ソース電極2から主電流を取り出すワイヤ61〜87の本数を14本以上とし、方向を異なる2方向に分散させる。2方向に分散したワイヤの先は、同一の配線電極42に接続される。
【選択図】 図5
Description
図1は実施の形態1で用いられる半導体素子1の形状を示した図である。
図7は、実施の形態2の半導体装置100を示した図である。
Claims (13)
- 電力スイッチングを行なうパワー半導体装置であって、
縦横比が1:1.5以上に扁平な形状を有する半導体基板と、
前記半導体基板の第1、第2の主面にそれぞれ形成される第1、第2の主電極とを備える、パワー半導体装置。 - 前記半導体基板に形成され、前記第1、第2の主電極間に接続される単数または複数のパワー半導体素子をさらに備える、請求項1に記載のパワー半導体装置。
- 制御電極をさらに備え、
単数または複数のパワー半導体素子の各々は、電界効果型電流制御素子であり前記制御電極に与えられる電圧に応じて前記第1、第2の主電極間に流れる電流を制御する、請求項2に記載のパワー半導体装置。 - 電力スイッチングを行なうパワー半導体装置であって、
半導体基板と、
前記半導体基板の第1、第2の主面にそれぞれ形成される第1、第2の主電極と、
前記半導体基板が配置される絶縁性基板と、
前記絶縁性基板上に形成される配線電極と、
前記第1の主電極を前記配線電極に並列的に接続する14本以上の複数のワイヤとを備える、パワー半導体装置。 - 前記半導体基板は、短辺と、前記短辺との比率が1:1.5以上である長辺とを有する長方形の形状である、請求項4に記載のパワー半導体装置。
- 前記配線電極は、前記半導体基板を挟むように配置され、
前記複数のワイヤは、
前記半導体基板から第1の向きに前記配線電極まで延在する第1のワイヤ群と、
前記半導体基板から前記第1の向きとは異なる第2の向きに前記配線電極まで延在する第2のワイヤ群とを含む、請求項4に記載のパワー半導体装置。 - 前記半導体基板は、長方形の形状を有し、
前記第1の主電極は、前記長方形の短辺に沿う方向に複数の領域に分割され、
前記複数の領域のうちの第1の領域には前記第1のワイヤ群に属するワイヤが接続され、
前記第1の領域に隣接する前記複数の領域のうちの第2の領域には前記第2のワイヤ群に属するワイヤが接続される、請求項6に記載のパワー半導体装置。 - 電力スイッチングを行なうパワー半導体装置であって、
半導体基板と、
前記半導体基板の第1、第2の主面にそれぞれ形成される第1、第2の主電極と、
前記半導体基板が配置される絶縁性基板と、
前記絶縁性基板上に形成され、前記半導体基板を第1、第2の部分で挟むように配置される配線電極と、
前記第1の主電極を前記配線電極に並列的に接続する複数のワイヤとを備え、
前記複数のワイヤは、
前記第1の主電極を前記配線電極の前記第1の部分に接続する第1のワイヤと、
前記第1の主電極を前記配線電極の前記第2の部分に接続する第2のワイヤとを含む、パワー半導体装置。 - 前記配線電極は、前記第1、第2の部分と第3の部分で前記半導体基板の3方を囲み、
前記複数のワイヤは、
前記第1の主電極を前記配線電極の前記第3の部分に接続する第3のワイヤをさらに含む、請求項8に記載のパワー半導体装置。 - 前記配線電極は、前記第1〜第3の部分と第4の部分とで前記半導体基板の4方を囲み、
前記複数のワイヤは、
前記第1の主電極を前記配線電極の前記第4の部分に接続する第4のワイヤをさらに含む、請求項9に記載のパワー半導体装置。 - 前記半導体基板は、電流密度400A/cm2以上を流すことが可能である請求項1〜10のいずれか1項に記載のパワー半導体装置。
- 前記半導体基板は、炭化珪素(SiC)である、請求項11に記載のパワー半導体装置。
- 前記半導体基板は、窒化ガリウム(GaN)である、請求項11に記載のパワー半導体装置。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008187151A (ja) * | 2007-01-31 | 2008-08-14 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP2010258328A (ja) * | 2009-04-28 | 2010-11-11 | Fuji Electric Systems Co Ltd | ワイドバンドギャップ半導体装置 |
US10236231B2 (en) | 2014-02-26 | 2019-03-19 | J-Devices Corporation | Semiconductor device |
CN112151598A (zh) * | 2019-06-27 | 2020-12-29 | 株式会社电装 | 半导体装置 |
JP2022057189A (ja) * | 2020-09-30 | 2022-04-11 | 三菱電機株式会社 | 半導体装置 |
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JPS63213968A (ja) * | 1987-03-03 | 1988-09-06 | Mitsubishi Electric Corp | 半導体装置 |
JPH0494141A (ja) * | 1990-08-09 | 1992-03-26 | Fuji Electric Co Ltd | 半導体装置 |
JPH0729932A (ja) * | 1993-07-12 | 1995-01-31 | Origin Electric Co Ltd | 電力用半導体装置 |
JPH0729933A (ja) * | 1993-07-12 | 1995-01-31 | Origin Electric Co Ltd | 電力用半導体装置 |
JPH0758272A (ja) * | 1993-08-20 | 1995-03-03 | Origin Electric Co Ltd | 電力用半導体装置 |
JPH10189866A (ja) * | 1996-12-06 | 1998-07-21 | Texas Instr Inc <Ti> | 縦横比の大きい集積回路チップおよびその製造方法 |
JPH11265573A (ja) * | 1998-01-13 | 1999-09-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2000058820A (ja) * | 1998-08-07 | 2000-02-25 | Hitachi Ltd | パワー半導体素子及びパワーモジュール |
JP2003188378A (ja) * | 2001-12-14 | 2003-07-04 | Mitsubishi Electric Corp | 半導体装置 |
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2004
- 2004-11-25 JP JP2004340918A patent/JP2006156479A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63213968A (ja) * | 1987-03-03 | 1988-09-06 | Mitsubishi Electric Corp | 半導体装置 |
JPH0494141A (ja) * | 1990-08-09 | 1992-03-26 | Fuji Electric Co Ltd | 半導体装置 |
JPH0729932A (ja) * | 1993-07-12 | 1995-01-31 | Origin Electric Co Ltd | 電力用半導体装置 |
JPH0729933A (ja) * | 1993-07-12 | 1995-01-31 | Origin Electric Co Ltd | 電力用半導体装置 |
JPH0758272A (ja) * | 1993-08-20 | 1995-03-03 | Origin Electric Co Ltd | 電力用半導体装置 |
JPH10189866A (ja) * | 1996-12-06 | 1998-07-21 | Texas Instr Inc <Ti> | 縦横比の大きい集積回路チップおよびその製造方法 |
JPH11265573A (ja) * | 1998-01-13 | 1999-09-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2000058820A (ja) * | 1998-08-07 | 2000-02-25 | Hitachi Ltd | パワー半導体素子及びパワーモジュール |
JP2003188378A (ja) * | 2001-12-14 | 2003-07-04 | Mitsubishi Electric Corp | 半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008187151A (ja) * | 2007-01-31 | 2008-08-14 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP2010258328A (ja) * | 2009-04-28 | 2010-11-11 | Fuji Electric Systems Co Ltd | ワイドバンドギャップ半導体装置 |
US9450084B2 (en) | 2009-04-28 | 2016-09-20 | Fuji Electric Systems Co. Ltd. | Wide band gap semiconductor device |
US10236231B2 (en) | 2014-02-26 | 2019-03-19 | J-Devices Corporation | Semiconductor device |
CN112151598A (zh) * | 2019-06-27 | 2020-12-29 | 株式会社电装 | 半导体装置 |
JP2022057189A (ja) * | 2020-09-30 | 2022-04-11 | 三菱電機株式会社 | 半導体装置 |
JP7407684B2 (ja) | 2020-09-30 | 2024-01-04 | 三菱電機株式会社 | 半導体装置 |
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