JP6892796B2 - 電子部品装置及びその製造方法 - Google Patents
電子部品装置及びその製造方法 Download PDFInfo
- Publication number
- JP6892796B2 JP6892796B2 JP2017133444A JP2017133444A JP6892796B2 JP 6892796 B2 JP6892796 B2 JP 6892796B2 JP 2017133444 A JP2017133444 A JP 2017133444A JP 2017133444 A JP2017133444 A JP 2017133444A JP 6892796 B2 JP6892796 B2 JP 6892796B2
- Authority
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- Japan
- Prior art keywords
- metal
- connection terminal
- lead frame
- electronic component
- pad portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
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Images
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Landscapes
- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
図3〜図9は実施形態のリードフレームを説明するための図、図10〜図18は実施形態のリードフレームの製造方法を説明するための図である。
また、前述した図4(a)及び(b)のリードフレーム1aと同様に、パッド部DPx及びパッド部CPの各周囲領域の金属電極30aの上面、側面及び下面に金属酸化層22が形成されている。
亜塩素酸ナトリウム(NaClO2) 0〜100g/L
水酸化ナトリウム(NaOH) 5〜60g/L
リン酸三ナトリウム(Na3PO4) 0〜200g/L
処理条件:
浴温 50℃〜80℃
処理時間 1秒〜20秒
電流密度 0.2A/dm2
このようにして、各パッド部GP,SP,DPの周囲領域の金属電極20a,20b,20cの上面、側面及び下面に金属酸化層22がそれぞれ形成される。パッド部GP,SP,DPは貴金属めっき層からなるため、陽極酸化されない。このようにして、パッド部GP,SP,DPの周囲領域に金属酸化層22がそれぞれセルフアラインで形成される。
Claims (12)
- 第1金属電極と、
前記第1金属電極の上面に形成され、金属めっき層からなる第1パッド部と、
前記第1パッド部の周囲領域の前記第1金属電極の上面に形成された第1金属酸化層とを含む第1接続端子を備えた第1リードフレームと、
第2金属電極と、
前記第2金属電極の下面に形成され、金属めっき層からなる第2パッド部と、
前記第2パッド部の周囲領域の前記第2金属電極の下面に形成された第2金属酸化層とを含む第2接続端子を備えた第2リードフレームと、
下面側に第1端子部を備え、上面側に第2端子部を備えた電子部品と
を有し、
前記電子部品の第1端子部が前記第1接続端子の第1パッド部に第1金属接合材によって接続され、
前記電子部品の第2端子部が前記第2接続端子の第2パッド部に第2金属接合材によって接続されていることを特徴とする電子部品装置。 - 前記第1金属接合材は前記第1パッド部内に配置され、前記第1金属酸化層が前記第1金属接合材から露出していることを特徴とする請求項1に記載の電子部品装置。
- 前記第2金属接合材は前記第2パッド部内に配置され、前記第2金属酸化層が前記第2金属接合材から露出していることを特徴とする請求項1又は2に記載の電子部品装置。
- 前記電子部品の第1端子部は、パワー半導体チップのゲート端子部及びソース端子部であり、前記電子部品の第2端子部は前記パワー半導体チップのドレイン端子部であり、
前記第1接続端子は、ゲート用接続端子、ソース用接続端子及びドレイン用接続端子であり、
前記パワー半導体チップのゲート端子部及びソース端子部が、前記ゲート用接続端子及び前記ソース用接続端子にそれぞれ接続され、
前記第2接続端子の第2パッド部が前記パワー半導体チップのドレイン端子部に接続されていると共に、前記第2接続端子の一端側の接続部が前記ドレイン用接続端子に接続されていることを特徴とする請求項1乃至3のいずれか一項に記載の電子部品装置。 - 前記第1リードフレームと、前記電子部品と、前記第2リードフレームと、を封止し、上面と下面とを有する封止樹脂を有し、
前記封止樹脂の下面から、前記第1金属電極の下面が露出していることを特徴とする請求項1乃至4のいずれか一項に記載の電子部品装置。 - 前記封止樹脂の上面から、前記第2金属電極の上面が露出していることを特徴とする請求項5に記載の電子部品装置。
- 第1の金属板をパターニングして第1金属電極を形成する工程と、
前記第1金属電極の上面に金属めっき層を形成して第1パッド部を得る工程と、
前記第1パッド部の周囲領域の前記第1金属電極の上面に第1金属酸化層を形成して、
前記第1金属電極、前記第1パッド部及び前記第1金属酸化層を含む第1接続端子を備えた第1リードフレームを得る工程と、
第2の金属板をパターニングして第2金属電極を形成する工程と、
前記第2金属電極の下面に金属めっき層を形成して第2パッド部を得る工程と、
前記第2パッド部の周囲領域の前記第2金属電極の下面に第2金属酸化層を形成して、
前記第2金属電極、前記第2パッド部及び前記第2金属酸化層を含む第2接続端子を備えた第2リードフレームを得る工程と、
電子部品の下面側の第1端子部を前記第1接続端子の第1パッド部に第1金属接合材によって接続する工程と、
前記電子部品の上面側の第2端子部を前記第2接続端子の第2パッド部に第2金属接合材によって接続する工程と、
を有する
ことを特徴とする電子部品装置の製造方法。 - 電子部品の第1端子部を前記第1接続端子の第1パッド部に第1金属接合材によって接続する工程において、
前記第1金属接合材は前記第1パッド部内に配置され、前記第1金属酸化層が前記第1金属接合材から露出することを特徴とする請求項7に記載の電子部品装置の製造方法。 - 電子部品の第2端子部を前記第2接続端子の第2パッド部に第2金属接合材によって接続する工程において、
前記第2金属接合材は前記第2パッド部内に配置され、前記第2金属酸化層が前記第2金属接合材から露出することを特徴とする請求項7又は8に記載の電子部品装置の製造方法。 - 前記第1金属電極を形成する工程において、
前記第1の金属板は銅板であり、前記第1金属電極は銅電極であり、
前記第1金属酸化層を形成する工程において、前記銅電極を陽極酸化して銅酸化層を形成し、
前記第2金属電極を形成する工程において、
前記第2の金属板は銅板であり、前記第2金属電極は銅電極であり、
前記第2金属酸化層を形成する工程において、前記銅電極を陽極酸化して銅酸化層を形成することを特徴とする請求項7乃至9のいずれか一項に記載の電子部品装置の製造方法。 - 前記第1リードフレームと、前記電子部品と、前記第2リードフレームと、を封止し、上面と下面とを有する封止樹脂を形成する工程を有し、
前記封止樹脂を形成する工程では、前記封止樹脂の下面から、前記第1金属電極の下面が露出することを特徴とする請求項7乃至10のいずれか一項に記載の電子部品装置の製造方法。 - 前記封止樹脂を形成する工程では、前記封止樹脂の上面から、前記第2金属電極の上面が露出することを特徴とする請求項11に記載の電子部品装置の製造方法。
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US5205036A (en) * | 1988-10-17 | 1993-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with selective coating on lead frame |
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US6307755B1 (en) * | 1999-05-27 | 2001-10-23 | Richard K. Williams | Surface mount semiconductor package, die-leadframe combination and leadframe therefor and method of mounting leadframes to surfaces of semiconductor die |
US6777800B2 (en) | 2002-09-30 | 2004-08-17 | Fairchild Semiconductor Corporation | Semiconductor die package including drain clip |
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US8129229B1 (en) * | 2007-11-10 | 2012-03-06 | Utac Thai Limited | Method of manufacturing semiconductor package containing flip-chip arrangement |
US7830024B2 (en) * | 2008-10-02 | 2010-11-09 | Advanced Semiconductor Engineering, Inc. | Package and fabricating method thereof |
US8586419B2 (en) * | 2010-01-19 | 2013-11-19 | Vishay-Siliconix | Semiconductor packages including die and L-shaped lead and method of manufacture |
US9478484B2 (en) * | 2012-10-19 | 2016-10-25 | Infineon Technologies Austria Ag | Semiconductor packages and methods of formation thereof |
US9806029B2 (en) * | 2013-10-02 | 2017-10-31 | Infineon Technologies Austria Ag | Transistor arrangement with semiconductor chips between two substrates |
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