JP2013247199A - リードフレーム及びその製造方法 - Google Patents
リードフレーム及びその製造方法 Download PDFInfo
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- JP2013247199A JP2013247199A JP2012118941A JP2012118941A JP2013247199A JP 2013247199 A JP2013247199 A JP 2013247199A JP 2012118941 A JP2012118941 A JP 2012118941A JP 2012118941 A JP2012118941 A JP 2012118941A JP 2013247199 A JP2013247199 A JP 2013247199A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
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- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Lead Frames For Integrated Circuits (AREA)
Abstract
【解決手段】 金属板の上面側から施されたハーフエッチング加工によって端子部と半導体素子搭載部が形成されていて、前記半導体素子搭載部に半導体素子を載置して上面側から樹脂封止を行った後に、下面側から施されるハーフエッチング加工によって前記端子部が導体端子となるリードフレームにおいて、前記端子部は、上面側に前記導体端子のボンディング部となる第1のめっき層、下面側に前記導体端子の外部接続部となる第2のめっき層、略中央に該端子部を略水平方向に貫く貫通孔を有する。
【選択図】 図3
Description
12、13、13’ 導体端子
12a、13a、13a’ ボンディング部
12b、13b、13b’ 外部接続部
13c、13c’ ボンディング部側端子
13d、13d’ 外部接続部側端子
13e、13e’ 配線部
13f、13f’ 貫通孔
21 半導体素子
31 ボンディングワイヤ
41 封止樹脂
51、51’ ドライフィルムレジスト
52 めっき用レジストマスク
53 エッチング用レジストマスク
61 めっき層
Claims (7)
- 金属板の上面側から施されたハーフエッチング加工によって端子部と半導体素子搭載部が形成されていて、前記半導体素子搭載部に半導体素子を載置して上面側から樹脂封止を行った後に、下面側から施されるハーフエッチング加工によって前記端子部が導体端子となるリードフレームにおいて、
前記端子部は、上面側に前記導体端子のボンディング部となる第1のめっき層、下面側に前記導体端子の外部接続部となる第2のめっき層、略中央に該端子部を略水平方向に貫く貫通孔を有することを特徴とするリードフレーム。 - 前記端子部が、ボンディング部を有する略柱状のボンディング部側端子となる第1の突出部と、前記外部接続部を有する略柱状の外部接続部側端子となる第2の突出部と、前記ボンディング部側端子と前記外部接続部側端子とを接続し略中央に略水平方向に貫く貫通孔を有する前記導体端子の配線部となる第3の突出部と、を有することを特徴とする請求項1に記載のリードフレーム。
- 前記第1の突出部が、前記第2の突出部よりも前記半導体素子搭載部側に形成されていることを特徴とする請求項2に記載のリードフレーム。
- 前記第3の突出部の水平方向の幅が、前記第1の突出部及び前記第2の突出部の幅よりも狭いことを特徴とする請求項2又は3に記載のリードフレーム。
- 前記第3の突出部の前記貫通孔の下面側の部分が、前記下面側から施されるハーフエッチング加工によって溶解され除去されることを特徴とする請求項2〜4のいずれか1項に記載のリードフレーム。
- 前記貫通孔が、前記樹脂封止を行う際に、樹脂が充填されるように形成されていることを特徴とする請求項1〜5のいずれか1項に記載のリードフレーム。
- 上面側にボンディング部、下面側に導体端子の外部接続部となるめっき層を有する端子部を形成する際に、該端子部を略水平方向に貫く貫通孔を形成することを特徴とするリードフレームの製造方法。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016154161A (ja) * | 2015-02-20 | 2016-08-25 | Shマテリアル株式会社 | 半導体素子搭載用リードフレーム及びその製造方法 |
JP2017005150A (ja) * | 2015-06-11 | 2017-01-05 | Shマテリアル株式会社 | Ledパッケージ及び多列型led用リードフレーム、並びにそれらの製造方法 |
JP2017005226A (ja) * | 2015-06-16 | 2017-01-05 | Shマテリアル株式会社 | Ledパッケージ及び多列型led用リードフレーム、並びにそれらの製造方法 |
JP2017010961A (ja) * | 2015-06-16 | 2017-01-12 | Shマテリアル株式会社 | Ledパッケージ及び多列型led用リードフレーム、並びにそれらの製造方法 |
JP2017112201A (ja) * | 2015-12-16 | 2017-06-22 | Shマテリアル株式会社 | 半導体装置用リードフレーム及びその製造方法 |
JP2017168689A (ja) * | 2016-03-16 | 2017-09-21 | Shマテリアル株式会社 | Ledパッケージ並びに多列型led用リードフレーム及びその製造方法 |
JP2017168691A (ja) * | 2016-03-16 | 2017-09-21 | Shマテリアル株式会社 | Ledパッケージ並びに多列型led用リードフレーム及びその製造方法 |
CN107818963A (zh) * | 2016-09-14 | 2018-03-20 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
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JP2008186869A (ja) * | 2007-01-26 | 2008-08-14 | Toppan Printing Co Ltd | リードフレーム、およびその製造方法 |
JP2010161320A (ja) * | 2009-01-09 | 2010-07-22 | Mitsui High Tec Inc | 半導体装置及びその製造方法 |
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JP2008186869A (ja) * | 2007-01-26 | 2008-08-14 | Toppan Printing Co Ltd | リードフレーム、およびその製造方法 |
JP2010161320A (ja) * | 2009-01-09 | 2010-07-22 | Mitsui High Tec Inc | 半導体装置及びその製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016154161A (ja) * | 2015-02-20 | 2016-08-25 | Shマテリアル株式会社 | 半導体素子搭載用リードフレーム及びその製造方法 |
JP2017005150A (ja) * | 2015-06-11 | 2017-01-05 | Shマテリアル株式会社 | Ledパッケージ及び多列型led用リードフレーム、並びにそれらの製造方法 |
JP2017005226A (ja) * | 2015-06-16 | 2017-01-05 | Shマテリアル株式会社 | Ledパッケージ及び多列型led用リードフレーム、並びにそれらの製造方法 |
JP2017010961A (ja) * | 2015-06-16 | 2017-01-12 | Shマテリアル株式会社 | Ledパッケージ及び多列型led用リードフレーム、並びにそれらの製造方法 |
JP2017112201A (ja) * | 2015-12-16 | 2017-06-22 | Shマテリアル株式会社 | 半導体装置用リードフレーム及びその製造方法 |
JP2017168689A (ja) * | 2016-03-16 | 2017-09-21 | Shマテリアル株式会社 | Ledパッケージ並びに多列型led用リードフレーム及びその製造方法 |
JP2017168691A (ja) * | 2016-03-16 | 2017-09-21 | Shマテリアル株式会社 | Ledパッケージ並びに多列型led用リードフレーム及びその製造方法 |
CN107818963A (zh) * | 2016-09-14 | 2018-03-20 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN107818963B (zh) * | 2016-09-14 | 2023-08-29 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
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