TW201423917A - 樹脂密封型半導體裝置及其製造方法 - Google Patents

樹脂密封型半導體裝置及其製造方法 Download PDF

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TW201423917A
TW201423917A TW102130602A TW102130602A TW201423917A TW 201423917 A TW201423917 A TW 201423917A TW 102130602 A TW102130602 A TW 102130602A TW 102130602 A TW102130602 A TW 102130602A TW 201423917 A TW201423917 A TW 201423917A
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lead
resin
semiconductor device
wafer pad
sealing resin
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TWI587457B (zh
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Noriyuki Kimura
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Seiko Instr Inc
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Abstract

提供一種樹脂密封型半導體裝置，其包含被搭載在晶片焊墊部上之半導體元件，和被配置成其前端部與晶片焊墊部相向之複數引線部，和連接半導體元件之電極和引線部之金屬細線，和部分性密封該些之密封樹脂，和從密封樹之露出的晶片焊墊部之底面部和引線部之底面部和外側面部和上側端部，在露出的引線部之底面部及上側端部被施予電鍍層。

Description

樹脂密封型半導體裝置及其製造方法
本發明係關於被稱為QFN或DFN之無引線型之樹脂密封型半導體裝置，和與其製造方法，尤其係提升引線端子部之安裝可靠性。
近年來，為了對應於電子機器之小型化，要求半導體零件之高密度安裝，隨此傾向半導體零件之小型化、薄型化。與BGA或CSP封裝體並進，DFN及QFN型之半導體裝置當作使用引線框架之小型封裝體被實用化。
圖7(a)為以往之DFN封裝體之背面圖，圖8(b)為其A-A線剖面圖。DFN封裝體係藉由密封樹脂16密封引線部13和被搭載在晶片焊墊部12之半導體元件11，使複數引線部13和晶片焊墊部12從其背面露出。複數引線部13係在封裝體背面沿著平行之2直線而被整列，該些形成外部引線。再者，複數引線部13係在密封樹脂16內經金屬細線14而與半導體元件11之表面電極電性連 接。
DFN封裝體因不使複數引線部13從密封樹脂16朝外部突出，故有可以縮小對安裝基板的安裝面積之優點。再者，藉由使晶片焊墊部12從密封樹脂16露出，可以效率佳地使內部之發熱朝外部發散。但是，DFN封裝體也有將晶片焊墊部12密封在密封樹脂16內之構造。QFN封裝體係在封裝體背面使外部引線露出於4方向的構成。
圖8為從上方觀看樹脂密封後之框架的頂視圖。圖9為圖8所示之框架之切斷後之B-B剖面圖。如圖8及圖9所示般，採用以密封樹脂16密封被搭載於框架框之各晶片焊墊部12之半導體元件11之後，沿著切斷線，藉由晶片切割裝置之旋轉刀，同時切斷密封樹脂16和引線部13，如圖10所示般個片化成個體的半導體裝置之方法。
(例如，參照專利文獻1) 〔先行技術文獻〕 〔專利文獻〕
〔專利文獻1〕日本特表2002-519848號公報(圖7)
該種樹脂密封型半導體裝置係於樹脂密封後，以旋轉刀切斷引線部13之切斷處而從框架分離，取得個體的半導體裝置。但是，因從框架切斷引線部13而形成，故在 引線部13之切斷部之端面不存在電鍍層17，故於使用焊料18將半導體裝置接合於印刷基板等之安裝基板20時，在從引線部13之密封樹脂部露出之側面部分，不形成焊料18所產生的焊條，有安裝強度變弱，安裝可靠性下降之虞。
當參照圖面進行說明時，作為圖10所示之圓內的放大圖，在圖11表示半導體裝置之引線部13，從引線被切斷之引線部13的密封樹脂16露出之引線部13之端面部上，不存在被形成在其他引線部13之外部表面的電鍍層17。因此，如放大被安裝之狀態的模式剖面圖之圖12所示般，藉由焊料18等之接合劑將半導體裝置安裝在安裝基板20之時，在引線部13之端面部分不形成焊條，安裝強度下降。
本發明為了解決上述課題，提供可以提升DFN或QFN型之樹脂密封型半導體裝置之基板安裝的強度及安裝可靠性的半導體裝置及其製造方法。
為了解決上述課題，使用下述般之手段。
首先，為一種樹脂密封型半導體裝置，具有：被搭載在晶片焊墊部上之半導體元件；被配置成其前端部與上述晶片焊墊部相向的複數引線部；連接上述半導體元件之電極和上述引線部之金屬細線；以密封樹脂部分性密封上述晶片焊墊部和半導體元件和上述引線部，該樹脂密封型半 導體裝置之特徵為：上述晶片焊墊部之底面部和上述引線部之底面部和外側面部和上側端部從上述密封樹脂露出，在上述露出之引線底面部及引線上側端部具有電鍍層。
再者，具有上述電鍍層之引線上側端部形成圓弧形狀。
再者，設為以上述引線底面部之電鍍層及上述引線上側端部之電鍍層係由鉛、鉍、錫、銅、銀、鈀、金中之任一金屬層或兩個以上之合金層所構成為特徵之樹脂密封型半導體裝置。
再者，設為以在具有上述電鍍層之引線上側端部和密封樹脂之間設置有空間部為特徵之樹脂密封型半導體裝置。
再者，使用一種樹脂密封型半導體裝置之製造方法，由下述工程所組成：將配置成其前端部與晶片焊墊部相向之複數引線部當作1單元，準備具有複數其單元之框架或電鑄基板的工程；在上述框架或電鑄基板之各晶片焊墊部搭載半導體元件，以金屬細線電性連接上述引線部和上述半導體元件表面之電極的工程；藉由密封樹脂密封上述晶片焊墊部和上述半導體元件和上述引線部之時，使晶片焊墊部之底面部和引線部之底面部露出之工程；在上述樹脂密封後的框架或電鑄基板之各單元之境界部分之引線部之切斷處，從密封樹脂之上面側藉由旋轉刀，進行引線預切割，使一部分引線部殘留而在上述切斷處形成凹部的工 程；對上述凹部之表面進行濕蝕刻而形成引線上側端部的工程；將進行上述濕蝕刻之後的框架或電鑄基板浸漬於電鍍浴而在上述引線底面部和上述引線上側端部形成電鍍層的工程；及對上述切斷處之凹部藉由旋轉刀或切斷沖頭，切斷上述凹部剩餘引線部而進行全引線切割，使樹脂密封型半導體裝置從框架分離之工程。
藉由使用上述手段，於將本發明之樹脂密封型半導體裝置焊接於印刷基板等之安裝基板之連接盤部之時，因將焊條形成至被設置在引線部之引線上側端部19b之電鍍層，故可以提升安裝強度，提高安裝可靠性。並且，於基板安裝時，藉由在引線端面部形成形狀良好之焊條，可以提升安裝後之接合部之外觀檢查時之辨識精度，降低辨識不良。
11‧‧‧半導體元件
12‧‧‧晶片焊墊部
13‧‧‧引線部
14‧‧‧金屬細線
15‧‧‧密封薄片
16‧‧‧密封樹脂
17‧‧‧電鍍層
18‧‧‧焊料
19a‧‧‧引線底面部
19b‧‧‧引線上側端部
19c‧‧‧引線外側面部
20‧‧‧安裝基板
21‧‧‧連接盤部
22‧‧‧濕蝕刻部
圖1為搭載本發明之一實施例之半導體元件之框架的頂視圖。
圖2為表示本發明之一實施型態之樹脂密封型半導體裝置之製造方法的頂視圖(a)、剖面圖(b)~(d)。
圖3為接續於圖2，表示本發明之一實施型態之樹脂密封型半導體裝置之製造方法的剖面圖(e)~(h)。
圖4為表示本發明之一實施型態之樹脂密封型半導體 裝置的剖面圖。
圖5為表示本發明之一實施型態之樹脂密封型半導體裝置的剖面圖(引線部之放大圖)。
圖6為表示本發明之一實施型態之樹脂密封型半導體裝置的剖面圖(安裝狀態之放大圖)。
圖7為表示以往之樹脂密封型半導體裝置的圖式。
圖8為表示以往之樹脂密封型半導體裝置之製造方法的框架頂視圖。
圖9為表示以往之樹脂密封型半導體裝置之製造方法的剖面圖。
圖10為以往之樹脂密封型半導體裝置之剖面圖。
圖11為表示以往之樹脂密封型半導體裝置的剖面圖(引線部之放大圖)。
圖12為表示以往之樹脂密封型半導體裝置的剖面圖(安裝狀態之放大圖)。
以下，針對本發明之樹脂密封型半導體裝置及其製造方法之一實施型態一面參照圖面一面予以說明。首先，針對本實施例之框架予以說明。
圖1為搭載本實施例之半導體元件之框架的頂視圖，圖2(a)為搭載半導體元件之前的框架頂視圖，圖2(b)~圖3(h)為表示半導體裝置之製造方法的剖面圖。本實施例之半導體裝置係如圖1所示般，框架由銅 (Cu)材所構成，以被搭載於晶片焊墊部12上之半導體元件11，配置成其前端部與晶片焊墊部12相向之複數引線部13為一個單元，成為具有複數其單元之構成。圖中之虛線表示於搭載半導體元件11而構成樹脂密封型半導體裝置之時，以密封樹脂16密封之區域，再者，一點鏈線所示之部分表示搭載半導體元件11之後，樹脂密封，構成樹脂密封型半導體裝置之後，分離成各個半導體裝置之切斷線。
接著，針對本實施例之樹脂密封半導體裝置予以說明。圖4為表示使用圖1所示之框架之樹脂密封型半導體裝置之圖示，為圖1所示之B-B剖面圖。
如圖4所示般，在框架之晶片焊墊部12上搭載半導體元件11，其半導體元件11上之電極和引線部13藉由金屬細線14被電性連接。然後，晶片焊墊部12上之半導體元件11、引線部13之外圍藉由密封樹脂16被密封。然後，其引線部13從密封樹脂16之底面露出，引線底面部19a構成外部端子。在DFN或QFN，引線底面部和密封樹脂之底面成為略同一面。再者，成為引線之前端的引線外側面部19c從密封樹脂16之側面露出。引線外側面部19c依據被切斷的方式不同，有實質上成為與密封樹脂16之側面同一面之情形，也有從密封樹脂16之側面稍微突出之情形。並且，在本實施例之樹脂密封型半導體裝置，設置有與引線外側面部19c之上連接的引線上側端部19b。引線上側端部19b因其剖面被形成圓弧形狀，故在 引線上側端部19b和密封樹脂16之間設置有不存在密封樹脂16之空間部。因此，引線部13成為隨著越接近為其前端之引線外側面部19c，厚度變薄之形狀，在引線上側端部之垂直上方隔著空間部存在有密封樹脂。並且，空間部從密封樹脂側觀看時，為密封樹脂之垂直下方，成為在密封樹脂和引線上側端部之間不存在引線部之金屬的區域。
引線底面部19a及引線上側端部19b具有電鍍層17，電鍍層17係由鉛、鉍、錫、銅、銀、鈀、金中之任一者金屬或複數之金屬之合金所構成，藉由電解電鍍法或無電解電鍍法所形成。
圖5為放大(以○包圍之部分)圖4所示之引線部13的放大圖，圖示引線部13、引線底面部19a、引線上側端部19b、引線外側面部19c及電鍍層17。
如圖6所示般，藉由焊料18將本實施例之樹脂密封型半導體裝置接合在印刷基板等之安裝基板20之連接盤部21之時，因在被設置在引線部13之引線上側端部19b具有電鍍層17，故在引線部13之側面部分形成有焊條，故可以提升安裝強度，提高安裝可靠性。
接著，針對本實施型態之樹脂密封半導體裝置之製造方法予以說明。
如圖2(a)所示般，將在框架內載置半導體元件之矩形狀之晶片焊墊部12和配置成前端部與其晶片焊墊部12相向之複數引線部13當作1單元，準備由具有複數其 單元之銅材所構成之引線框架。在引線框架之底面側，貼附密封薄片15，該密封薄片15成為保護密封樹脂不包繞至引線部13之底面，用以使引線部13之底面露出之功能構件。
如圖2(b)所示般，在引線框架之各單元之晶片焊墊部12上藉由銀漿等之接著劑(無圖示)，分別接合半導體元件11，之後，如圖2(c)所示般，藉由打線接合法，以金屬細線14電性連接半導體元件11上之電極墊(無圖示)和引線部13。
接著，如圖2(d)所示般，藉由轉移模製法，藉由以環氧系樹脂所構成之密封樹脂16，密封晶片焊墊部12、半導體元件11、引線部13之上面區域和金屬細線14之連接區域，以作為引線框架之外圍。
接著，如圖3(e)所示般，去除密接於引線框架之引線部13之底面的密封薄片15。在該狀態下，晶片焊墊部12及引線部13從密封樹脂16露出。對於樹脂密封後之引線框架之引線部13之切斷處，從密封樹脂16側藉由切割法以旋轉刀，進行預引線切割，以作為第1切斷，在切斷處形成凹部。該預引線切割係切掉引線部13之厚度的5%~80%。
接著，如圖3(f)所示般，不被切掉之剩餘引線部，從密封樹脂16面側，藉由等方性之濕蝕刻，被蝕刻成圓弧狀之形狀，形成濕蝕刻部22之一部分的引線上側端部19b。
接著，如圖3(g)所示般，在對引線框架之引線部13，藉由濕蝕刻被形成圓弧狀之引線部13之底面部19a和上側端部19b和晶片焊墊部12底面部形成電鍍層17。在此，藉由電解電鍍法形成錫100%組成之電鍍層。電鍍層17之形成除藉由電解電鍍之方法外，即使使用無電解電鍍亦可。
在上述說明中，設為以圖3(e)進行密封薄片15之除去，但是於圖3(f)之濕蝕刻之後，即是，即使於電鍍層17形成前進行亦可。
接著，如圖3(h)所示般，對形成有電鍍層17之引線部13之切斷處之凹部，從密封樹脂16側藉由旋轉刀，進行全切割以作為第2引線切割，從引線框架分離樹脂密封型半導體裝置。此時，形成引線外側面部19c。在該工程中，因剩餘的引線部13之厚度變薄，故可以無阻抗地進行刀切斷。再者，在本實施例中，雖然藉由旋轉刀進行全切割以作為第2引線切割，從引線框架分離樹脂密封型半導體裝置，但是即使使用採用模具沖頭之切斷法而分離亦可。依此，可以防止由於引線框架之引線材所產生的毛邊(burr)。
並且，即使適當變更預引線切割和全引線切割中所使用之旋轉刀之寬度、形狀，將在全引線切割中所使用之旋轉刀之寬度設定成較在預引線切割中所使用之旋轉刀小亦可。此時，引線部13之前端之引線外側面部19c較密封樹脂16之側面些微突出至外側。
以上，在本發明之樹脂密封型半導體裝置及其製造方法中，樹脂密封型半導體裝置係藉由焊料18將半導體裝置接合在印刷基板等之安裝基板20之連接盤部21之時，因在被設置在引線部13之引線上側端部19b具有電鍍層17，故在引線部13之側面部分形成有焊條，故可以提升安裝強度，提高安裝可靠性。並且，於基板安裝時，藉由在引線端面部形成形狀良好之焊條，可以提升安裝後之接合部之外觀檢查時之辨識精度，降低辨識不良。
11‧‧‧半導體元件
12‧‧‧晶片焊墊部
13‧‧‧引線部
14‧‧‧金屬細線
16‧‧‧密封樹脂
17‧‧‧電鍍層
19a‧‧‧引線底面部
19b‧‧‧引線上側端部
19c‧‧‧引線外側面部

Claims (8)

  1. 一種樹脂密封型半導體裝置，其特徵為具有：晶片焊墊部；被搭載在上述晶片焊墊部上之半導體元件；配置成與上述晶片焊墊部相向的複數引線部；連接上述半導體元件之複數電極和上述複數引線部的金屬細線；及以上述複數之引線部部分性露出之方式，密封上述晶片焊墊部、上述半導體元件及上述複數引線部之密封樹脂，上述複數引線部具備有從上述密封樹脂露出的作為底面之引線底面部，和作為前端的引線外側面部，和作為上面之一部分的引線上側端部，上述引線底面部位於與上述密封樹脂之底面相同面內，上述引線底面部及上述引線上側端部具有電鍍層，在上述引線上側端部之垂直上方隔著上述密封樹脂之下的空間部存在上述密封樹脂。
  2. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中以圓弧形狀形成具有上述電鍍層之引線上側端部的剖面。
  3. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中 上述引線底面部之電鍍層及上述引線上側端部之電鍍層係由鉛、鉍、錫、銅、銀、鈀、金中之任一金屬層或兩個以上之合金層所構成。
  4. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中上述複數之引線部係在上述密封樹脂下，越接近上述引線外側面部厚度越薄。
  5. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中上述晶片焊墊部之底面部從上述密封樹脂露出。
  6. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中上述引線外側面部突出至較上述密封樹脂之側面更外側。
  7. 一種樹脂密封型半導體裝置之製造方法，其特徵為：由下述工程所組成將晶片焊墊部及配置成與上述晶片焊墊部相向之複數引線部當作1單元，準備具有複數其單元之框架或電鑄基板的工程；在上述框架或電鑄基板之上述晶片焊墊部之各個搭載半導體元件，以金屬細線連接上述引線部和上述半導體元件表面之電極的工程；以上述複數之引線部之底面部露出之方式，藉由密封樹脂對上述晶片焊墊部和上述半導體元件和上述引線部進 行樹脂密封的工程；在上述樹脂密封的上述框架或電鑄基板之各單元之境界部分之上述引線部之切斷處，從上述密封樹脂之上面側藉由旋轉刀，進行引線預切割，使上述引線部之一部分殘留而在上述切斷處形成凹部的工程；對上述凹部之表面進行濕蝕刻而形成引線上側端部至成為上述密封樹脂之下方的區域的工程；將濕蝕刻之後的上述框架或電鑄基板浸漬於電鍍浴而在上述引線底面部和上述引線上側端部形成電鍍層的工程；及在上述切斷處，藉由旋轉刀或切斷沖頭，切斷形成有上述電鍍層之上述引線部之殘留之部分而進行全引線切割，分離成個體。
  8. 如申請專利範圍第7項所記載之樹脂密封型半導體裝置之製造方法，其中對上述晶片焊墊部和上述半導體元件和上述引線部進行樹脂密封之工程，包含使上述晶片焊墊部之底面部露出。
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CN103681577B (zh) 2017-10-20

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