JP5442368B2 - 直付リード線を備えるicチップパッケージ - Google Patents
直付リード線を備えるicチップパッケージ Download PDFInfo
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- JP5442368B2 JP5442368B2 JP2009211270A JP2009211270A JP5442368B2 JP 5442368 B2 JP5442368 B2 JP 5442368B2 JP 2009211270 A JP2009211270 A JP 2009211270A JP 2009211270 A JP2009211270 A JP 2009211270A JP 5442368 B2 JP5442368 B2 JP 5442368B2
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 title description 14
- 239000012790 adhesive layer Substances 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000008393 encapsulating agent Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 35
- 239000002184 metal Substances 0.000 description 35
- 230000000712 assembly Effects 0.000 description 15
- 238000000429 assembly Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 239000004033 plastic Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910000881 Cu alloy Inorganic materials 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 7
- 238000009966 trimming Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 241000272168 Laridae Species 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000012778 molding material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 210000003000 inclusion body Anatomy 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
12 パワーMOSFETチップ
14 ソースコンタクト領域
16 ゲートコンタクト領域
18 ソースリードアセンブリ
18a コンタクト領域
18b ソースリード線
19 接着層
20 ゲートリードアセンブリ
22 ドレインリードアセンブリ
22a コンタクト領域
22b ドレインリード線
23 接着層
24 プラスチック製封入体
26、32 リードフレームストリップ
40 パワーMOSFETパッケージ
42 パワーMOSFETチップ
44 ソースコンタクト領域
46 ゲートコンタクト領域
48 ソースリードアセンブリ
48a コンタクト領域
48b ソースリード線
49 接着層
50 ゲートリードアセンブリ
50a コンタクト領域
50b ゲートリード線
52 ドレインリードアセンブリ
52a コンタクト領域
52b ドレインリード線
53 接着層
54 封入体
60 パワーMOSFETパッケージ
62 パワーMOSFETチップ
64 ソースコンタクト領域
66 ゲートコンタクト領域
68 ソースリードアセンブリ
68a コンタクト領域
68b ソースリード線
69 接着層
70 ゲートリードアセンブリ
70a コンタクト領域
70b ゲートリード線
72 ドレインリードアセンブリ
72a コンタクト領域
72b ドレインリード線
72c 下側表面
73 接着層
74 封入体
74a 下側封入体表面
76、78 リードフレームストリップ
80 パワーMOSFETパッケージ
82 パワーMOSFETチップ
84 共通ソースコンタクト領域
85 共通ゲートコンタクト領域
86 共通ソースコンタクト領域
87 第1のソースリードアセンブリ
87a コンタクト領域
87b ソースリード線
88 ゲートリードアセンブリ
88a コンタクト領域
88b ゲートリード線
89 接着層
90 ソースリードアセンブリ
91 ゲートリードアセンブリ
94 封入体
96 リードフレームストリップ
100 パワーMOSFETパッケージ
102 パワーMOSFETチップ
103 ゲートリードアセンブリ
104 封入体
Claims (9)
- 半導体デバイスであって、
上側及び下側表面を備え、それぞれ前記上側及び下側表面のうちの選択された1つに設けられたソースコンタクト領域、ゲートコンタクト領域、及びドレインコンタクト領域を備える半導体ダイと、
前記半導体ダイの前記ソースコンタクト領域に、第1の導電性接着層を介して取り付けられたソース接続用の平坦なコンタクト部分と、前記ソース接続用の平坦なコンタクト部分から延び出す複数のソースリード部分とを含むソースリードと、
前記半導体ダイの前記ゲートコンタクト領域に、第2の導電性接着層を介して取り付けられたゲート接続用の平坦なコンタクト部分と、前記ゲート接続用の平坦なコンタクト部分から延び出すゲートリード部分とを含むゲートリードと、
前記半導体ダイの前記ドレインコンタクト領域に、第3の導電性接着層を介して取り付けられたドレイン接続用の平坦なコンタクト部分と、前記ドレイン接続用の平坦なコンタクト部分から延び出す複数のドレインリード部分とを含むドレインリードと、
少なくとも前記半導体ダイの一部、及び前記ドレインリードの一部を封入する封入体とを備えることを特徴とする半導体デバイス。 - 前記ドレインリードが、ドレインリード上側表面とドレインリード下側表面とを有することを特徴とする請求項1に記載の半導体デバイス。
- 前記封入体が、前記ドレインリード下側表面を露出するように前記ドレインリードの一部を封入することを特徴とする請求項2に記載の半導体デバイス。
- 前記封入体が、前記ソースリードの一部を封入し、かつ前記封入体が、前記ゲートリードの一部も封入することを特徴とする請求項1に記載の半導体デバイス。
- 前記ドレインリード、前記ソースリード、前記ゲートリードはそれぞれ、導電性材料を含み、かつ、前記半導体ダイは、その上に形成された複数のパワーMOSFETを含むことを特徴とする請求項4に記載の半導体デバイス。
- 半導体デバイスを製造するための方法であって、
上側及び下側表面を備え、それぞれ前記上側及び下側表面のうちの選択された1つに設けられたソースコンタクト領域、ゲートコンタクト領域、及びドレインコンタクト領域を備える半導体ダイを準備する過程と、
ソース接続接続用の平坦なコンタクト部分と、前記ソース接続用の平坦なコンタクト部分から延び出す複数のソースリード部分とを含むソースリードを形成する過程と、
前記ソースリードの前記ソース接続用の平坦なコンタクト部分を前記半導体ダイの前記ソースコンタクト領域に第1の導電性接着層を介して取り付ける過程と、
ゲート接続平坦部分と、前記ゲート接続用の平坦なコンタクト部分から延び出すゲートリード部分とを含むゲートリードを形成する過程と、
前記ゲートリードの前記ゲート接続用の平坦なコンタクト部分を前記半導体ダイの前記ゲートコンタクト領域に第2の導電性接着層を介して取り付ける過程と、
ドレイン接続用の平坦なコンタクト部分と、前記ドレイン接続用の平坦なコンタクト部分から延び出す複数のドレインリード部分とを含むドレインリードを形成する過程と、
前記ドレインリードの前記ドレイン接続用の平坦なコンタクト部分を前記半導体ダイの前記ドレインコンタクト領域に第3の導電性接着層を介して取り付ける過程と、
電気的絶縁性封入体で、前記半導体ダイの一部、前記ゲートリードの一部、及び前記ドレインリードの一部を封入する過程とを有することを特徴とする方法。 - 前記ドレインリードを、ドレインリード上側表面とドレインリード下側表面とを有するものとすることを特徴とする請求項6に記載の方法。
- 前記封入する過程が、電気的絶縁性封入体で、前記ドレインリード下側表面を露出するように前記ドレインリードの一部を封入する過程を含むことを特徴とする請求項7に記載の方法。
- 前記ドレインリード、前記ソースリード、前記ゲートリードはそれぞれ、導電性材料から形成されるものとし、かつ、前記半導体ダイを、その上に形成された複数のパワーMOSFETを含むものとすることを特徴とする請求項7に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/089,310 US6249041B1 (en) | 1998-06-02 | 1998-06-02 | IC chip package with directly connected leads |
US09/089310 | 1998-06-02 |
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Application Number | Title | Priority Date | Filing Date |
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JP15208099A Division JP4991042B2 (ja) | 1998-06-02 | 1999-05-31 | 直付リード線を備えるicチップパッケージ |
Publications (3)
Publication Number | Publication Date |
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JP2009302564A JP2009302564A (ja) | 2009-12-24 |
JP2009302564A5 JP2009302564A5 (ja) | 2011-09-08 |
JP5442368B2 true JP5442368B2 (ja) | 2014-03-12 |
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Application Number | Title | Priority Date | Filing Date |
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JP15208099A Expired - Lifetime JP4991042B2 (ja) | 1998-06-02 | 1999-05-31 | 直付リード線を備えるicチップパッケージ |
JP2009211270A Expired - Lifetime JP5442368B2 (ja) | 1998-06-02 | 2009-09-14 | 直付リード線を備えるicチップパッケージ |
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JP15208099A Expired - Lifetime JP4991042B2 (ja) | 1998-06-02 | 1999-05-31 | 直付リード線を備えるicチップパッケージ |
Country Status (6)
Country | Link |
---|---|
US (1) | US6249041B1 (ja) |
EP (4) | EP2306515A3 (ja) |
JP (2) | JP4991042B2 (ja) |
KR (1) | KR100363776B1 (ja) |
DE (1) | DE69940386D1 (ja) |
TW (1) | TW520541B (ja) |
Families Citing this family (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6423623B1 (en) * | 1998-06-09 | 2002-07-23 | Fairchild Semiconductor Corporation | Low Resistance package for semiconductor devices |
KR20000057810A (ko) * | 1999-01-28 | 2000-09-25 | 가나이 쓰토무 | 반도체 장치 |
JP3871486B2 (ja) * | 1999-02-17 | 2007-01-24 | 株式会社ルネサステクノロジ | 半導体装置 |
WO2000049656A1 (fr) * | 1999-02-17 | 2000-08-24 | Hitachi, Ltd. | Dispositif semi-conducteur et procede de fabrication associe |
US6856013B1 (en) * | 1999-02-19 | 2005-02-15 | Micron Technology, Inc. | Integrated circuit packages, ball-grid array integrated circuit packages and methods of packaging an integrated circuit |
US6825550B2 (en) | 1999-09-02 | 2004-11-30 | Micron Technology, Inc. | Board-on-chip packages with conductive foil on the chip surface |
US7211877B1 (en) * | 1999-09-13 | 2007-05-01 | Vishay-Siliconix | Chip scale surface mount package for semiconductor device and process of fabricating the same |
US6867499B1 (en) * | 1999-09-30 | 2005-03-15 | Skyworks Solutions, Inc. | Semiconductor packaging |
US6521982B1 (en) | 2000-06-02 | 2003-02-18 | Amkor Technology, Inc. | Packaging high power integrated circuit devices |
US6459147B1 (en) * | 2000-03-27 | 2002-10-01 | Amkor Technology, Inc. | Attaching semiconductor dies to substrates with conductive straps |
US6720642B1 (en) * | 1999-12-16 | 2004-04-13 | Fairchild Semiconductor Corporation | Flip chip in leaded molded package and method of manufacture thereof |
US6762067B1 (en) * | 2000-01-18 | 2004-07-13 | Fairchild Semiconductor Corporation | Method of packaging a plurality of devices utilizing a plurality of lead frames coupled together by rails |
JP3864029B2 (ja) * | 2000-03-24 | 2006-12-27 | 松下電器産業株式会社 | 半導体パッケージ及び半導体パッケージの製造方法 |
US6989588B2 (en) * | 2000-04-13 | 2006-01-24 | Fairchild Semiconductor Corporation | Semiconductor device including molded wireless exposed drain packaging |
US6870254B1 (en) * | 2000-04-13 | 2005-03-22 | Fairchild Semiconductor Corporation | Flip clip attach and copper clip attach on MOSFET device |
US6566164B1 (en) | 2000-12-07 | 2003-05-20 | Amkor Technology, Inc. | Exposed copper strap in a semiconductor package |
US6717260B2 (en) * | 2001-01-22 | 2004-04-06 | International Rectifier Corporation | Clip-type lead frame for source mounted die |
US6469398B1 (en) | 2001-03-29 | 2002-10-22 | Kabushiki Kaisha Toshiba | Semiconductor package and manufacturing method thereof |
US6645791B2 (en) * | 2001-04-23 | 2003-11-11 | Fairchild Semiconductor | Semiconductor die package including carrier with mask |
US6791172B2 (en) | 2001-04-25 | 2004-09-14 | General Semiconductor Of Taiwan, Ltd. | Power semiconductor device manufactured using a chip-size package |
US7057273B2 (en) * | 2001-05-15 | 2006-06-06 | Gem Services, Inc. | Surface mount package |
EP1271648A1 (en) * | 2001-06-22 | 2003-01-02 | Siliconx (Taiwan) Ltd | Power semiconductor package and method for making the same |
JP2003100976A (ja) * | 2001-09-27 | 2003-04-04 | Sanyo Electric Co Ltd | 半導体装置 |
US20030064542A1 (en) * | 2001-10-02 | 2003-04-03 | Corisis David J. | Methods of packaging an integrated circuit |
EP1316999A1 (de) * | 2001-11-28 | 2003-06-04 | Continental ISAD Electronic Systems GmbH & Co. oHG | Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen |
US7323361B2 (en) * | 2002-03-29 | 2008-01-29 | Fairchild Semiconductor Corporation | Packaging system for semiconductor devices |
EP1357594A1 (en) * | 2002-04-23 | 2003-10-29 | General Semiconductor of Taiwan, Ltd. | Power semiconductor device manufactured using a chip-size package |
TW540123B (en) * | 2002-06-14 | 2003-07-01 | Siliconware Precision Industries Co Ltd | Flip-chip semiconductor package with lead frame as chip carrier |
JP2004079760A (ja) | 2002-08-19 | 2004-03-11 | Nec Electronics Corp | 半導体装置及びその組立方法 |
US7061077B2 (en) | 2002-08-30 | 2006-06-13 | Fairchild Semiconductor Corporation | Substrate based unmolded package including lead frame structure and semiconductor die |
US20040080028A1 (en) | 2002-09-05 | 2004-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device with semiconductor chip mounted in package |
DE10301091B4 (de) * | 2003-01-14 | 2015-01-22 | Infineon Technologies Ag | Leistungs-Halbleiterbauelement und Verfahren zur Verbindung von einem gemeinsamen Substratträger zugeordneten Halbleitereinrichtungen |
DE10303463B4 (de) | 2003-01-29 | 2006-06-14 | Infineon Technologies Ag | Halbleiterbauelement mit wenigstens zwei in einem Gehäuse integrierten und durch einen gemeinsamen Kontaktbügel kontaktierten Chips |
JP4173751B2 (ja) * | 2003-02-28 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2004349347A (ja) * | 2003-05-20 | 2004-12-09 | Rohm Co Ltd | 半導体装置 |
US7759775B2 (en) * | 2004-07-20 | 2010-07-20 | Alpha And Omega Semiconductor Incorporated | High current semiconductor power device SOIC package |
US7208818B2 (en) * | 2004-07-20 | 2007-04-24 | Alpha And Omega Semiconductor Ltd. | Power semiconductor package |
US20060108635A1 (en) * | 2004-11-23 | 2006-05-25 | Alpha Omega Semiconductor Limited | Trenched MOSFETS with part of the device formed on a (110) crystal plane |
US20060145319A1 (en) * | 2004-12-31 | 2006-07-06 | Ming Sun | Flip chip contact (FCC) power package |
US9337132B2 (en) * | 2004-12-31 | 2016-05-10 | Alpha And Omega Semiconductor Incorporated | Methods and configuration for manufacturing flip chip contact (FCC) power package |
US20060145312A1 (en) * | 2005-01-05 | 2006-07-06 | Kai Liu | Dual flat non-leaded semiconductor package |
US7511361B2 (en) | 2005-01-05 | 2009-03-31 | Xiaotian Zhang | DFN semiconductor package having reduced electrical resistance |
US7884454B2 (en) | 2005-01-05 | 2011-02-08 | Alpha & Omega Semiconductor, Ltd | Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package |
US7898092B2 (en) * | 2007-11-21 | 2011-03-01 | Alpha & Omega Semiconductor, | Stacked-die package for battery power management |
JP2006203048A (ja) * | 2005-01-21 | 2006-08-03 | Matsushita Electric Ind Co Ltd | 半導体装置 |
DE102005011159B4 (de) * | 2005-03-09 | 2013-05-16 | Infineon Technologies Ag | Halbleiterbauteil mit oberflächenmontierbaren Außenkontaktflächen und Verfahren zur Herstellung desselben |
JP2006324320A (ja) * | 2005-05-17 | 2006-11-30 | Renesas Technology Corp | 半導体装置 |
DE102005027356B4 (de) * | 2005-06-13 | 2007-11-22 | Infineon Technologies Ag | Halbleiterleistungsbauteilstapel in Flachleitertechnik mit oberflächenmontierbaren Außenkontakten und ein Verfahren zur Herstellung desselben |
US20070075419A1 (en) * | 2005-09-06 | 2007-04-05 | Denso Corporation | Semiconductor device having metallic lead and electronic device having lead frame |
US20070057368A1 (en) * | 2005-09-13 | 2007-03-15 | Yueh-Se Ho | Semiconductor package having plate interconnections |
US7622796B2 (en) * | 2005-09-13 | 2009-11-24 | Alpha And Omega Semiconductor Limited | Semiconductor package having a bridged plate interconnection |
US7683464B2 (en) * | 2005-09-13 | 2010-03-23 | Alpha And Omega Semiconductor Incorporated | Semiconductor package having dimpled plate interconnections |
US20070075406A1 (en) * | 2005-09-30 | 2007-04-05 | Yueh-Se Ho | Wafer-level method for metallizing source, gate and drain contact areas of semiconductor die |
US7285849B2 (en) * | 2005-11-18 | 2007-10-23 | Fairchild Semiconductor Corporation | Semiconductor die package using leadframe and clip and method of manufacturing |
DE102006005420B4 (de) * | 2006-02-03 | 2010-07-15 | Infineon Technologies Ag | Stapelbares Halbleiterbauteil und Verfahren zur Herstellung desselben |
DE102006015447B4 (de) * | 2006-03-31 | 2012-08-16 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit einem Leistungshalbleiterchip und Verfahren zur Herstellung desselben |
JP5165214B2 (ja) * | 2006-06-26 | 2013-03-21 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
US20080036078A1 (en) * | 2006-08-14 | 2008-02-14 | Ciclon Semiconductor Device Corp. | Wirebond-less semiconductor package |
DE102006060484B4 (de) * | 2006-12-19 | 2012-03-08 | Infineon Technologies Ag | Halbleiterbauelement mit einem Halbleiterchip und Verfahren zur Herstellung desselben |
US8237268B2 (en) | 2007-03-20 | 2012-08-07 | Infineon Technologies Ag | Module comprising a semiconductor chip |
GB2451077A (en) * | 2007-07-17 | 2009-01-21 | Zetex Semiconductors Plc | Semiconductor chip package |
RU2486336C2 (ru) * | 2007-11-01 | 2013-06-27 | Лоджинд Б.В. | Способы имитации разрыва пласта-коллектора и его оценки и считываемый компьютером носитель |
TWI456707B (zh) * | 2008-01-28 | 2014-10-11 | Renesas Electronics Corp | 半導體裝置及其製造方法 |
JP2009200338A (ja) * | 2008-02-22 | 2009-09-03 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4804497B2 (ja) * | 2008-03-24 | 2011-11-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8680658B2 (en) * | 2008-05-30 | 2014-03-25 | Alpha And Omega Semiconductor Incorporated | Conductive clip for semiconductor device package |
JPWO2010004609A1 (ja) * | 2008-07-07 | 2011-12-22 | 三菱電機株式会社 | 電力用半導体装置 |
JP5107839B2 (ja) | 2008-09-10 | 2012-12-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8138587B2 (en) * | 2008-09-30 | 2012-03-20 | Infineon Technologies Ag | Device including two mounting surfaces |
US8188587B2 (en) * | 2008-11-06 | 2012-05-29 | Fairchild Semiconductor Corporation | Semiconductor die package including lead with end portion |
US8124449B2 (en) | 2008-12-02 | 2012-02-28 | Infineon Technologies Ag | Device including a semiconductor chip and metal foils |
US20100164078A1 (en) * | 2008-12-31 | 2010-07-01 | Ruben Madrid | Package assembly for semiconductor devices |
JP5621217B2 (ja) * | 2009-06-11 | 2014-11-12 | シンフォニアテクノロジー株式会社 | 電子モジュールの製造方法及び電子モジュール並びに車両 |
US9257375B2 (en) | 2009-07-31 | 2016-02-09 | Alpha and Omega Semiconductor Inc. | Multi-die semiconductor package |
US8164199B2 (en) * | 2009-07-31 | 2012-04-24 | Alpha and Omega Semiconductor Incorporation | Multi-die package |
DE102009041641B4 (de) * | 2009-09-17 | 2020-09-24 | Pac Tech-Packaging Technologies Gmbh | Diodenanordnung und Verfahren zur Herstellung einer Diodenanordnung |
US9728868B1 (en) | 2010-05-05 | 2017-08-08 | Cree Fayetteville, Inc. | Apparatus having self healing liquid phase power connects and method thereof |
KR101101018B1 (ko) * | 2010-06-21 | 2011-12-29 | 김재구 | 리드선이 개량된 다이오드 패키지 및 그 제조방법 |
DE102011003870A1 (de) * | 2011-02-09 | 2012-08-09 | Robert Bosch Gmbh | Schaltungsmodul für ein Fahrzeug |
JP5787784B2 (ja) * | 2012-02-15 | 2015-09-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8803185B2 (en) * | 2012-02-21 | 2014-08-12 | Peiching Ling | Light emitting diode package and method of fabricating the same |
JP2012235164A (ja) * | 2012-08-20 | 2012-11-29 | Renesas Electronics Corp | 半導体装置 |
DE102012019391A1 (de) * | 2012-10-02 | 2014-04-03 | Infineon Technologies Ag | Leitungshalbleitergehäuse mit redundanter Funktionalität |
JP6338937B2 (ja) * | 2014-06-13 | 2018-06-06 | ローム株式会社 | パワーモジュールおよびその製造方法 |
JP2016062904A (ja) * | 2014-09-12 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
JP2017022258A (ja) * | 2015-07-10 | 2017-01-26 | 株式会社東芝 | 半導体パッケージ |
JP6764112B2 (ja) * | 2016-08-12 | 2020-09-30 | ミツミ電機株式会社 | 電池保護装置 |
KR102005381B1 (ko) * | 2017-02-20 | 2019-07-30 | 신덴겐코교 가부시키가이샤 | 전자 장치 |
KR102048481B1 (ko) * | 2017-02-20 | 2019-11-25 | 신덴겐코교 가부시키가이샤 | 전자 장치, 접속체 및 전자 장치의 제조 방법 |
WO2018150555A1 (ja) * | 2017-02-20 | 2018-08-23 | 新電元工業株式会社 | 電子装置及び接続体 |
US10720380B1 (en) | 2017-06-13 | 2020-07-21 | Starlet R. Glover | Flip-chip wire bondless power device |
US10553524B2 (en) * | 2017-10-30 | 2020-02-04 | Microchip Technology Incorporated | Integrated circuit (IC) die attached between an offset lead frame die-attach pad and a discrete die-attach pad |
US11373936B2 (en) * | 2019-11-14 | 2022-06-28 | Rohde & Schwarz Gmbh & Co. Kg | Flat no-leads package, packaged electronic component, printed circuit board and measurement device |
US20210305166A1 (en) * | 2020-03-27 | 2021-09-30 | Cree, Inc. | Power semiconductor package with improved performance |
JP6967627B2 (ja) * | 2020-05-08 | 2021-11-17 | アオイ電子株式会社 | 半導体装置 |
US11908771B2 (en) * | 2021-11-12 | 2024-02-20 | Infineon Technologies Ag | Power semiconductor device with dual heat dissipation structures |
CN118402064A (zh) * | 2021-12-17 | 2024-07-26 | 罗姆股份有限公司 | 电子装置 |
USD1029476S1 (en) * | 2023-06-30 | 2024-06-04 | Skechers U.S.A., Inc. Ii | Shoe outsole bottom |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52172A (en) * | 1975-06-23 | 1977-01-05 | Hitachi Ltd | Semiconductor |
JPS5577165A (en) * | 1978-12-06 | 1980-06-10 | Mitsubishi Electric Corp | Semiconductor device |
US4439918A (en) * | 1979-03-12 | 1984-04-03 | Western Electric Co., Inc. | Methods of packaging an electronic device |
US4380114A (en) * | 1979-04-11 | 1983-04-19 | Teccor Electronics, Inc. | Method of making a semiconductor switching device |
US4935803A (en) | 1988-09-09 | 1990-06-19 | Motorola, Inc. | Self-centering electrode for power devices |
US5028987A (en) * | 1989-07-03 | 1991-07-02 | General Electric Company | High current hermetic package having a lead extending through the package lid and a packaged semiconductor chip |
JPH04503283A (ja) * | 1989-07-03 | 1992-06-11 | ゼネラル・エレクトリック・カンパニイ | 半導体チップを含むインダクタンスの小さいカプセル封じパッケージ |
JP2901091B2 (ja) * | 1990-09-27 | 1999-06-02 | 株式会社日立製作所 | 半導体装置 |
JP2982126B2 (ja) * | 1991-03-20 | 1999-11-22 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP2747634B2 (ja) * | 1992-10-09 | 1998-05-06 | ローム株式会社 | 面実装型ダイオード |
JP2670408B2 (ja) | 1992-10-27 | 1997-10-29 | 株式会社東芝 | 樹脂封止型半導体装置及びその製造方法 |
JPH07230934A (ja) * | 1994-02-18 | 1995-08-29 | Rohm Co Ltd | 電子部品及びその基板実装構造 |
US5544412A (en) | 1994-05-24 | 1996-08-13 | Motorola, Inc. | Method for coupling a power lead to a bond pad in an electronic module |
DE69418037T2 (de) * | 1994-08-02 | 1999-08-26 | Consorzio Per La Ricerca Sulla Microelettronica Ne | Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau |
JP3027512B2 (ja) * | 1994-08-23 | 2000-04-04 | 株式会社日立製作所 | パワーmosfet |
JPH08116016A (ja) * | 1994-10-15 | 1996-05-07 | Toshiba Corp | リードフレーム及び半導体装置 |
US5821611A (en) * | 1994-11-07 | 1998-10-13 | Rohm Co. Ltd. | Semiconductor device and process and leadframe for making the same |
US5665996A (en) | 1994-12-30 | 1997-09-09 | Siliconix Incorporated | Vertical power mosfet having thick metal layer to reduce distributed resistance |
US6040626A (en) | 1998-09-25 | 2000-03-21 | International Rectifier Corp. | Semiconductor package |
-
1998
- 1998-06-02 US US09/089,310 patent/US6249041B1/en not_active Expired - Lifetime
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1999
- 1999-05-22 DE DE69940386T patent/DE69940386D1/de not_active Expired - Lifetime
- 1999-05-22 EP EP10013074A patent/EP2306515A3/en not_active Withdrawn
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- 1999-05-22 EP EP99110093A patent/EP0962975B1/en not_active Expired - Lifetime
- 1999-05-22 EP EP09001680A patent/EP2058857A3/en not_active Withdrawn
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- 1999-05-31 JP JP15208099A patent/JP4991042B2/ja not_active Expired - Lifetime
- 1999-06-02 KR KR1019990020146A patent/KR100363776B1/ko not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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EP2306513A3 (en) | 2011-10-12 |
JP2009302564A (ja) | 2009-12-24 |
DE69940386D1 (de) | 2009-03-26 |
JP4991042B2 (ja) | 2012-08-01 |
KR20000005823A (ko) | 2000-01-25 |
EP0962975A3 (en) | 2000-08-16 |
EP2058857A2 (en) | 2009-05-13 |
EP2306515A3 (en) | 2011-10-26 |
KR100363776B1 (ko) | 2002-12-11 |
EP2058857A3 (en) | 2011-05-18 |
EP2306513A2 (en) | 2011-04-06 |
JPH11354702A (ja) | 1999-12-24 |
US6249041B1 (en) | 2001-06-19 |
EP0962975B1 (en) | 2009-02-11 |
EP0962975A2 (en) | 1999-12-08 |
TW520541B (en) | 2003-02-11 |
EP2306515A2 (en) | 2011-04-06 |
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