EP1316999A1 - Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen - Google Patents
Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen Download PDFInfo
- Publication number
- EP1316999A1 EP1316999A1 EP01128251A EP01128251A EP1316999A1 EP 1316999 A1 EP1316999 A1 EP 1316999A1 EP 01128251 A EP01128251 A EP 01128251A EP 01128251 A EP01128251 A EP 01128251A EP 1316999 A1 EP1316999 A1 EP 1316999A1
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- contact device
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005476 soldering Methods 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 7
- 239000000110 cooling liquid Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims 2
- 238000002679 ablation Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Definitions
- the invention relates to a contact device and a method for contacting of power electronics components, as well as an assembly from one or several power electronics components with conductor tracks are contacted on a carrier.
- wire bonding a semiconductor component is placed on a substrate and the metallic contact surfaces (bond pads) of the components are connected to the contacts of the substrate by fine wires made of gold or aluminum, which are attached to the contact surfaces, for example by ultrasonic welding. Due to the serial implementation of the contacts, wire bonding is relatively time-consuming.
- TAB tape automated bonding
- solder bumps solder bumps
- DE-PS 19 11 633 discloses a method for contacting and encasing semiconductor devices in which the device is mounted on a stamped lead frame.
- the Component e.g. a high-performance transistor
- the contact areas with solder are covered, placed on a plate-like part of the lead frame and the ends of narrow lead webs of the lead frame on the Contact areas placed on the top of the transistor.
- the frame together with the component is now used in a mold, the temperature up increased to melt the solder and later the mold with plastic material filled. Finally, parts of the protruding from the encased component Lead frame removed to the leads to each Separate contacts electrically.
- No. 4,809,054 also shows a method for contacting semiconductor components with a lead frame.
- the ones on the top and bottom of the component arranged contact surfaces are covered with solder that Component placed on a rectangular section of the lead frame and another section of the lead frame folded down in such a way that it contacts the contact surface on the top of the component.
- DE 199 33 975 A1 is a lead frame for Contacting the connections of an assembly from several electronic Describes components.
- the invention has set itself the goal of an inexpensive system for contacting to provide power electronics components with which nevertheless mechanically and electrically stable, especially low inductance, Connection paths to the contacts of the component are made can.
- the invention provides a method for contacting one or several power electronics components with conductor tracks on a carrier ready.
- the method is carried out using one contact device with several areal contact elements connected by webs and comprises the following steps: (a) The contact device is opened the top of the component (s) placed; (b) the underside of a contact element each with a contact surface on the top a component and on the other hand electrically connected to a conductor track; (c) at least one of the webs between the individual contact elements is severed by thermal removal.
- the invention also provides a contact device for contacting a or more power electronics components with conductor tracks on one Carrier ready.
- the contact device comprises one or more flat contact elements, each for connecting a contact surface of a component with a conductor track are suitable.
- the individual contact elements of the Contact device are connected via webs, which are and / or ion beam cutting can be severed.
- the invention provides an assembly that includes one or more Power electronics components includes, at least on their top Have contact areas, as well as a carrier with conductor tracks on which the components rest with their underside.
- the assembly also includes one or more flat contact elements for contacting the Component (s) with the conductor tracks, one contact element on the one hand with a contact surface on the top of a component and on the other is electrically connected to a conductor track.
- conductor track is understood to mean the contact area that starts with the metallic contact surfaces (so-called pads) of a semiconductor component (Chips) is connected.
- pads metallic contact surfaces
- Chip carrier flat metal tracks on one Chip carrier, but other embodiments are also conceivable.
- the inductance of the connection paths between the component and conductor tracks low, which is particularly true for high-frequency applications is advantageous.
- the correspondingly large connecting surfaces a low contact resistance and therefore especially at high currents a comparatively less heating of the component.
- the contacts no special contact surfaces necessary because the electrical Connections by any simple method e.g. Soldering or bonding can be produced.
- the contacting method according to the invention becomes a contact device from several flat contact elements used, which are still connected by webs during assembly, so that the contact elements together on the / to be contacted Component / s can be placed.
- After making the electrical Connections are preferably cut through at least one of the webs, to electrically separate the corresponding contact elements from one another separate.
- a thermal removal process is preferably used for this, which has the advantage that - unlike many mechanical separation processes such as. Punching - access to the separation point from only one side needed.
- a solid support such as e.g. on Substrate platelets are.
- a non-contact thermal removal process is preferably used, which has the advantage that no mechanical forces when cutting the web are transmitted and therefore no mechanical stresses in the Can form contact device or the component.
- a laser beam is focused on the contact device and the carrier together Components moved in the desired cutting direction of the laser. Laser cutting allows the precise dosing of those introduced into the interface Amount of energy and the generation of precisely defined cutting edges.
- At least one component has on it lower side on a contact surface, which is placed on a conductor track and is electrically connected to this.
- Direct contact with the conductor track has the advantage of a particularly short connection path and offers particularly in the case of components constructed using vertical technology, such as vertical MOSFET power transistors, in which either the source or Drain contact is arranged on the underside of the transistor chip. such Components must therefore be contacted from both sides.
- all electrical Connections possibly also the above Connection between the bottom of a Component and a conductor track, manufactured in one operation. hereby there are significant cost savings compared to serial wire bonding technology.
- the electrical connections are preferably made by a so-called reflow soldering process.
- the solder usually by Solder paste printing, e.g. Screen printing, on the contact device and possibly the conductor tracks applied and then the components on the conductor tracks and the contact device placed on the components, which by the Adhesive properties of the solder paste is facilitated.
- the solder paste can alternatively can also be applied to the components themselves. Eventually the plumb bob by a simultaneous soldering process, for example in a continuous furnace or melted by vapor phase soldering.
- soldering With vapor phase soldering the assembled assembly into a zone with hot, saturated steam brought, the condensing on the colder assembly steam the emits heat energy required for melting the solder.
- soldering methods such as stamp or laser soldering, as well as any other Soldering and bonding processes are used.
- the contact device of the preferred embodiments is made of one Stamped part or a stamped and bent part.
- the contact device may be bent in some areas.
- the sections of the contact elements that are in contact with the contact surfaces of the component are to be contacted depending on the shape and / or size of the corresponding Adjusted contact area.
- the contact elements cover for the power contacts (e.g. source or drain of a MOSFET) corresponding power contact surfaces of the components completely, so An electrical connection with the contact element over the entire contact area can be produced and thus the contact resistance is low is held.
- the contact elements for the control contacts preferably have a smaller cross section than the power contacts, i.e. the current between the conductor track and the contact surface has a smaller conductor cross-section available, and are each in a recess of a Contact element arranged for a power contact.
- This arrangement is particularly advantageous for contacting components in which the control contact is also arranged in a recess of the power contact is, e.g. with current power MOSFETs. Also results a compact arrangement of all contact elements for a component.
- the contact device of the preferred exemplary embodiments has positioning aids for positioning the contact device on the or Components and / or the substrate. First of all, this makes alignment easier the contact device with respect to the components and the substrate Put on and also serves to slip the contact device during the preferred simultaneous reflow soldering process. If all connection points are heated at the same time, the contact device and the components practically "float" on the liquid solder of the contact surfaces and therefore slip easily.
- a spring means is preferably provided, which the contact device against the component or components and / or elastically loaded against the substrate and thereby prevents slipping.
- the carrier of the components and interconnects is a substrate plate such as an epoxy resin or ceramic substrate.
- the ceramic substrate made of Al 2 O 3 or AIN, for example, is laminated with a 300-400 ⁇ m thick copper layer, into which the conductor tracks are etched using a photolithographic process.
- the underside of the substrate is also coated with copper in order to avoid an asymmetrical expansion of the substrate layers when heated. Ceramic is a good insulator and very temperature-stable, but has a high thermal resistance and therefore hardly contributes to dissipating the heat loss of the components.
- a plastic frame is therefore used as the carrier, which is injection molded around the conductor tracks. The conductor tracks are therefore practically freely suspended and therefore have to be cooled gur.
- the plastic frame is suspended in a container with cooling liquid.
- the finished assembly is used, for example, as a half-bridge or as an inverter preferably used for a three-phase motor.
- the assembly of the shows the use in crankshaft starter generators
- Embodiments have great advantages because of the flat electrical connections have great mechanical stability and therefore that in the motor vehicle withstand occurring vibrations.
- Both are preferred Power components such as power MOSFETs / diodes, as well as logic components to control the power electronics on a common Carrier and thus arranged in an assembly.
- FIG. 1 shows a perspective view a contact device 1 for contacting 1 of three components with two contact areas on the top, e.g. three vertical MOSFETs with source and gate contacts on the top.
- number 2 is an arrangement of two contact elements 6, 8 for contacting one Component marked.
- the flat contact elements 6, 8 have sections 6a and 8a for connection to the contact surfaces of the Component and sections 6b and 8b for connection to the conductor tracks on.
- the components are under the sections 6a, 8a arranged in area B, the conductor tracks under sections 6b, 8b; if necessary, the solder for making the electrical connections applied to the underside of these sections (not shown) before assembly.
- Sections 6a, 8a and 6b, 6c each run parallel to one another and to the conductor tracks, in the areas 6c, 8c in between the contact elements 6 and 8 bent in steps to the height difference between the conductor tracks and the top of the component bridged.
- the levels are S-shaped or Z-shaped, so that the areas 6c, 8c act resiliently. This spring action is used to contact element 1 during Reflow soldering process e.g. press onto the conductor tracks using a soldering template and thus slipping of the contact device 1 and the components counteracting the conductor tracks.
- the contact elements 6, 8 are each connected via thin webs 5 which after contacting the components by one of the above thermal Removal processes are cut to the feed lines 6, 8 electrically from each other isolate.
- the wider webs 4 between the contact elements 6 can also be cut after contacting the components. However, this is not necessary if the three components that are created by the Contact device 1 shown are contacted, are connected in parallel.
- the contact element 8 Since only through the contact element 8, which contacts the gate electrode a small control current flows, while through the contact element 6 of current switched to the power component, e.g. 10-25 amps flows, the contact element 8 is narrower than the contact element 6 and therefore has a smaller cross-sectional area.
- the connection area 8a is also smaller than that of the contact element 6.
- the contact element 8 is located also in a central recess of the contact element 6, so that all Contact elements for a component are arranged compactly. In other (not shown) embodiments is the recess on the edge of the Contact element 6 arranged.
- FIG. 2 shows a component 10 contacted by the contact device 1.
- a power MOSFET in a semiconductor body 11 was used here as an example chosen on the metallic contact surfaces for the gate (G), source (S), and Drain (D) connections are applied. It is in the example shown is a vertical MOSFET so that the drain pad D on the Bottom and the gate and source contact areas G, S on the top of the transistor plate are arranged.
- the gate contact area is significant smaller than the source contact area and in a recess thereof arranged. From a comparison with Fig. 1 it is clear that the sections 6a, 8a of the contact elements 6, 8 shown there approximately in shape and area the metallic source or gate contact areas S, G of the transistor 10 correspond.
- Fig. 3 shows an arrangement 16 of six such components 10 and two contact devices 1 of FIG. 1 on a substrate plate 12.
- Das Substrate plate 12 consists, for example, of ceramic coated with copper.
- the wider conductor tracks 14 are used to contact the power contacts, while the narrower conductor tracks 15 carry the control signals.
- the underside of the components 10 each lie on a conductor track 14, so that the drain terminal D directly e.g. by reflow soldering with this Conductor can be contacted.
- FIG. 3 shows the assembly 16 after the contact devices have been put on 1, but before cutting the webs 5 or 4. Whether the electrical Connections have already been made, assembly 16 cannot be seen, since the connection points under sections 6a, 8a and 6b, 8b the contact elements 6, 8 are.
- the underside of the contact device 1 printed by screen printing with solder paste and after assembling the connection points heated simultaneously and thereby the solder to Brought melt. Due to the large areas of sections 6a, 8a, 8b, 6b, if these sections are covered with solder over their entire area, the later connection points also have a relatively large area and therefore have low contact resistance and great mechanical stability.
- the large width, in particular of the power contact elements 6, leads to a low inductance of the conductor connections and thus a good one Signal behavior at high frequencies.
- the webs 4, 5, not for the mechanical cohesion of the contact device 1 more are needed and switch the contact elements 6, 8 short, by laser cutting severed or cut out.
- the assembly 16 For protection, if necessary, coated with a gel or with epoxy resin.
- Fig. 4 shows the finished assembly 16 with severed webs 4, 5. In others (Not shown) embodiments are on top of the Contact device 1 placed and contacted further components 10.
- FIG. 5 shows another exemplary embodiment 16 'of the assembly 16, in which a plastic frame instead of a ceramic substrate 12 as a carrier 18 is used.
- This is designed as a molded part into which the conductor tracks 14, 15 are recessed at their ends, with one end of each trace 14, 15 as a connecting pin 14a, 15a laterally from the plastic frame 18 protrudes.
- the conductor tracks are approx. 1-3mm thick in this example. in the In the area of the components 10, the conductor tracks 14, 15 are in fact freely suspended, so that the components 10 by air cooling or with a cooling liquid can be cooled.
- the conductor tracks and components 10 are from all sides of the coolant 19 surround and can therefore the power loss well submit this.
- the cooling liquid 19 thereby partially evaporates and condenses in an upper region 24 of the container 20.
- FIGS. 7 and 8 show the positioning means with which a slipping of the components 10 and the contact device 1, in particular prevented during the soldering of the connection points 6a, 6b, 8a, 8b becomes.
- 7 shows a close-up view of a conductor track 15 of an assembly 16 '.
- a trough 26 is stamped into the conductor track 15, into which the component 10 fits exactly and which slips sideways prevented the same.
- On a conductor track 15 on a ceramic substrate 12 such a trough is not produced by embossing, but instead by printing a lacquer frame, which is the base of the component 10 recesses and thus the surface profile shown in FIG. 7 is generated.
- the positioning aids 28 here consist of L-shaped extensions of the contact device 1, which encompass a component 10. Prevent in the example shown the positioning aids 28 the slipping of the contact device in the direction arrow P; by appropriate positioning aids 28 on the end faces of the Contact elements 6 (not shown) can also be in the direction perpendicular to this positioning can be achieved.
- the in Fig. 7 and 8 means a fixation of both the contact device 1 compared to the components 10, as well as the components 10 opposite reached the conductor tracks 14.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
- Fig. 1
- eine perspektivische Ansicht einer Kontaktvorrichtung gemäß einem ersten Ausführungsbeispiel;
- Fig. 2
- eine perspektivische Ansicht eines zu kontaktierenden Leistungselektronik-Bauelements;
- Fig. 3
- eine perspektivische Ansicht einer Baugruppe gemäß einem ersten Ausführungsbeispiel;
- Fig. 4
- eine perspektivische Ansicht der Baugruppe der Fig. 3, mit durchtrennten Stegen;
- Fig. 5
- eine perspektivische Ansicht einer Baugruppe gemäß einem zweiten Ausführungsbeispiel;
- Fig. 6
- eine schematische Darstellung von mehreren in einem Kühlbehälter aufgehängten Baugruppen gemäß zweitem Ausführungsbeispiel;
- Fig. 7
- eine perspektivische Ansicht einer Leiterbahn; und
- Fig. 8
- eine perspektivische Ansicht einer Kontaktvorrichtung gemäß einem zweiten Ausführungsbeispiel;
Claims (21)
- Kontaktvorrichtung (1) zum Kontaktieren eines oder mehrerer Leistungselektronik-Bauelemente (10) mit Leiterbahnen (14, 15) auf einem Träger (12, 18), wobei die Kontaktvorrichtung (1) ein oder mehrere flächige Kontaktelemente (6, 8) umfaßt, die jeweils zum elektrischen Verbinden einer Kontaktfläche (G, S) auf einem Bauelement (10) mit einer Leiterbahn (14, 15) ausgelegt sind, und wobei die einzelnen Kontaktelemente (6, 8) der Kontaktvorrichtung (1) über Stege (4, 5) zusammenhängen, die durch Laser-, Elektronenund/oder lonenstrahlschneiden durchtrennbar sind.
- Kontaktvorrichtung (1) nach Anspruch 1, welche aus einem Stanzteil oder einem Stanzbiegeteil hergestellt ist.
- Kontaktvorrichtung (1) nach Anspruch 1 oder 2, wobei wenigstens bei einem Kontaktelement (6, 8) die Form und/oder Größe des Kontaktelements (6, 8) an die Form und/oder Größe der zu kontaktierenden Kontaktfläche (G, S) angepaßt ist.
- Kontaktvorrichtung (1) nach einem der vorstehenden Ansprüche, welche zum Kontaktieren von wenigstens einem Bauelement (10) mit sowohl Steuer- als auch Leistungskontakten geeignet ist, wobei ein Kontaktelement (8) für einen Steuerkontakt eine kleinere Querschnittsfläche aufweist als ein Kontaktelement für einen Leistungskontakt (6).
- Kontaktvorrichtung (1) nach Anspruch 4, wobei wenigstens ein Kontaktelement (8) für einen Steuerkontakt in einer Ausnehmung eines Kontaktelements (6) für einen Leistungskontakt angeordnet ist und über wenigstens einen Steg (5) mit diesem zusammenhängt.
- Kontaktvorrichtung (1) nach einem der vorstehenden Ansprüche, welche eine Positionierungshilfe (28) zum Positionieren der Kontaktvorrichtung (1) auf dem/den Bauelement(en) (10) und/oder dem Träger (12, 18) aufweist.
- Baugruppe (16, 16') , welche umfaßt:ein oder mehrere Leistungselektronik-Bauelement(e) (10), die wenigstens auf ihrer Oberseite Kontaktflächen (G, S) aufweisen;einen Träger (12, 18) mit Leiterbahnen (14, 15), auf denen das/die Bauelement(e) (10) mit ihrer Unterseite aufliegt(en);ein oder mehrere flächige Kontaktelemente (6, 8) zum Kontaktieren des/der Bauelements(e) (10) mit den Leiterbahnen (14, 15), wobei ein Kontaktelement (6, 8) jeweils einerseits mit einer Kontaktfläche (S, G) auf der Oberseite eines Bauelements (10) und andererseits mit einer Leiterbahn (14, 15) des Trägers (12,18) elektrisch verbunden ist.
- Baugruppe (16, 16') nach Anspruch 7, wobei die Kontaktelemente (6, 8) nach einem der Ansprüche 3-6 ausgestaltet sind.
- Baugruppe (16, 16') nach einem der Ansprüche 7 oder 8, welche ein Logik-Bauelement umfaßt, mit dem die Leistungselektronik-Bauelemente (10) ansteuerbar sind.
- Baugruppe (16, 16') nach einem der Ansprüche 7-9, welche die Funktion einer Halbbrücke oder eines Wechselrichters für einen Drehstrommotor erfüllt.
- Baugruppe (16) nach einem der Ansprüche 7-10, wobei der Träger ein Substratplättchen (12) und insbesondere ein Keramiksubstrat ist.
- Baugruppe (16') nach einem der Ansprüche 7-10, wobei der Träger ein Kunststoffrahmen (18) ist.
- Baugruppe (16') nach Anspruch 12, die zur Kühlung der Bauelemente (10) in einem Behälter (20) mit Kühlflüssigkeit (19) angeordnet ist.
- Verfahren zum Kontaktieren von einem oder mehreren Leistungselektronik-Bauelementen (10) mit Leiterbahnen (14, 15) auf einem Träger (12, 18) mithilfe einer Kontaktvorrichtung (1) mit mehreren flächigen durch Stege (4, 5) zusammenhängenden Kontaktelementen (6, 8), welches die folgenden Schritte umfaßt:a) die Kontaktvorrichtung (1) wird auf die Oberseite des/der Bauelements/e (10) aufgesetzt;b) die Unterseite eines Kontaktelements (6, 8) wird jeweils einerseits mit einer Kontaktfläche (S, G) auf der Oberseite eines Bauelements (10) und andererseits mit einer Leiterbahn (14, 15) des Trägers (12, 18) elektrisch verbunden;c) wenigstens einer der Stege (4, 5) zwischen den einzelnen Kontaktelementen (6, 8) wird durch thermisches Abtragen durchtrennt.
- Verfahren nach Anspruch 14, wobei in Schritt c) ein berührloses thermisches Abtragverfahren wie Laser-, Elektronen- oder lonenstrahlschneiden verwendet wird.
- Verfahren nach einem der Ansprüche 14 oder 15, wobei wenigstens ein Bauelement (10) auf seiner Unterseite eine Kontaktfläche (D) aufweist, die auf einer Leiterbahn (14) aufliegt und vor oder in Schritt b) mit dieser elektrisch verbunden wird.
- Verfahren nach einem der Ansprüche 14-16, wobei alle elektrischen Verbindungen in Schritt b) in einem Arbeitsgang hergestellt werden.
- Verfahren nach Anspruch 17, wobei zum Herstellen der elektrischen Verbindungen ein Reflow-Lötverfahren verwendet wird.
- Verfahren nach einem der Ansprüche 14-18, wobei die Kontaktvorrichtung (1) und/oder die Leiterbahnen (14) Positionierungshilfen aufweisen, die einem Verrutschen der Kontaktvorrichtung (1) und/oder des/der Bauelement(s)e (10) , insbesondere in Schritt b), entgegenwirken.
- Verfahren nach einem der Ansprüche 14-19, wobei die Kontaktvorrichtung (1) nach einem der Ansprüche 1-6 ausgestaltet ist.
- Verfahren nach einem der Ansprüche 14-20 zum Herstellen einer Baugruppe (16, 16') nach einem der Ansprüche 7-13.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01128251A EP1316999A1 (de) | 2001-11-28 | 2001-11-28 | Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen |
US10/306,291 US7009116B2 (en) | 2001-11-28 | 2002-11-27 | Contact device and a process to facilitate contact of power electronics components and an assembly that consists of one or several power electronics components |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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EP01128251A EP1316999A1 (de) | 2001-11-28 | 2001-11-28 | Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen |
Publications (1)
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EP1316999A1 true EP1316999A1 (de) | 2003-06-04 |
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EP01128251A Withdrawn EP1316999A1 (de) | 2001-11-28 | 2001-11-28 | Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen |
Country Status (2)
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US (1) | US7009116B2 (de) |
EP (1) | EP1316999A1 (de) |
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WO2004107442A1 (de) * | 2003-05-27 | 2004-12-09 | Siemens Aktiengesellschaft | Bidirektionaler schalter und verwendung des schalters |
EP1936687A1 (de) * | 2006-12-22 | 2008-06-25 | ABB Technology AG | Elektrischer Kontakt |
WO2023104378A1 (de) * | 2021-12-10 | 2023-06-15 | Vitesco Technologies GmbH | Flüssigkeitsgekühltes elektronisches bauelement |
DE102022112115B3 (de) | 2022-05-13 | 2023-07-06 | Kyocera Avx Components (Werne) Gmbh | Verfahren zur Herstellung einer Baugruppe durch Vereinzeln von Stanzgittern auf einer Leiterplatte |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1414065A2 (de) * | 2002-10-22 | 2004-04-28 | Siemens Aktiengesellschaft | Leistungsbauelementanordnung zur mechatronischen integration von Leistungsbauelementen |
EP1414065A3 (de) * | 2002-10-22 | 2006-05-24 | Siemens Aktiengesellschaft | Leistungsbauelementanordnung zur mechatronischen integration von Leistungsbauelementen |
WO2004107442A1 (de) * | 2003-05-27 | 2004-12-09 | Siemens Aktiengesellschaft | Bidirektionaler schalter und verwendung des schalters |
EP1936687A1 (de) * | 2006-12-22 | 2008-06-25 | ABB Technology AG | Elektrischer Kontakt |
US7651339B2 (en) | 2006-12-22 | 2010-01-26 | Abb Technology Ag | Electrical terminal |
WO2023104378A1 (de) * | 2021-12-10 | 2023-06-15 | Vitesco Technologies GmbH | Flüssigkeitsgekühltes elektronisches bauelement |
DE102022112115B3 (de) | 2022-05-13 | 2023-07-06 | Kyocera Avx Components (Werne) Gmbh | Verfahren zur Herstellung einer Baugruppe durch Vereinzeln von Stanzgittern auf einer Leiterplatte |
Also Published As
Publication number | Publication date |
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US7009116B2 (en) | 2006-03-07 |
US20030168252A1 (en) | 2003-09-11 |
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