WO2018150555A1 - 電子装置及び接続体 - Google Patents
電子装置及び接続体 Download PDFInfo
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- WO2018150555A1 WO2018150555A1 PCT/JP2017/006025 JP2017006025W WO2018150555A1 WO 2018150555 A1 WO2018150555 A1 WO 2018150555A1 JP 2017006025 W JP2017006025 W JP 2017006025W WO 2018150555 A1 WO2018150555 A1 WO 2018150555A1
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- terminal
- main terminal
- front surface
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2644—Adaptations of individual semiconductor devices to facilitate the testing thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2896—Testing of IC packages; Test features related to IC packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
Definitions
- the present invention relates to an electronic device and a connection body.
- a sensing terminal may be used for the purpose of detecting a voltage in a semiconductor element (Japanese Patent Laid-Open No. 7-245401). Since such a sensing terminal is connected to the conductor layer connected to the base end portion of the connector, a sensing current path for measuring the voltage of the semiconductor element and a current path flowing through the semiconductor element are partly. The voltage drop corresponding to the wiring resistance of the connector affected the voltage detected at the sensing terminal.
- the present invention provides an electronic device and a connection body that can detect an accurate voltage of an electronic element without being affected by wiring resistance as much as possible.
- An electronic device includes: A sealing part; A first main terminal protruding outward from the sealing portion; A second main terminal protruding outward from the sealing portion; An electronic element having a front surface electrically connected to the first main terminal, a back surface electrically connected to the second main terminal, and an electronic element provided in the sealing portion; A head portion connected to the front surface of the electronic element; A sensing terminal protruding outside from the sealing portion and used for sensing; A connection part formed integrally with the head part and electrically connected to the sensing terminal; With A current flowing through the sensing terminal and the connection portion in the sensing current path does not overlap with a main current path flowing through the second main terminal, the electronic element, and the first main terminal.
- the sensing terminal, the connection part, and the head part may be integrally formed.
- the first main terminal and the head portion may be integrally formed.
- An electronic device includes: You may further provide the base end part integrally formed with the said head part and connected to a conductor layer in the said sealing part.
- An electronic device includes: The electronic element has a pressure-resistant structure; You may further provide the avoidance part formed integrally with the said head part, and avoiding a contact with the said pressure
- a connection body includes: A sealing portion, a first main terminal projecting outward from the sealing portion, a second main terminal projecting outward from the sealing portion, and a front surface of the first main terminal being electrically An electronic element having a back surface electrically connected to the second main terminal, and an electronic element provided in the sealing portion, A head portion connected to the front surface of the electronic element; A connection part that is protruded to the outside from the sealing part and electrically connected to a sensing terminal used for sensing, and formed integrally with the head part, With The sensing current path of the current flowing in the connection portion among the sensing current paths does not overlap with the main current path flowing through the second main terminal, the electronic element, and the first main terminal.
- the head portion and the connection portion are integrally formed, the influence of wiring resistance can be prevented as much as possible, and the current flowing in the connection portion of the sensing current path is the first main terminal, the electronic element, and the second main terminal. Therefore, the influence of wiring resistance caused by the main current path can also be prevented. For this reason, the voltage of the electronic element can be detected more accurately.
- FIG. 1 is a perspective view of a semiconductor device according to the first embodiment of the present invention.
- FIG. 2 is a perspective view showing an aspect in which the sealing portion is removed in the semiconductor device according to the first embodiment of the present invention.
- FIG. 3 is a side view of the aspect shown in FIG. 2 viewed from the side.
- FIG. 4 is an enlarged side view of FIG.
- FIG. 5 is an enlarged perspective view of the aspect shown in FIG.
- FIG. 6 is a bottom view showing the relationship between the head unit, the avoiding unit, and the like used in the first embodiment of the present invention.
- FIG. 7 is a side view showing a mode in which the connection body is installed using a jig in the first embodiment of the present invention.
- FIG. 8 is a side view showing an aspect in which the connection portion and the front surface side sensing terminal are separated.
- FIG. 9 is a perspective view showing a connection body used in the second embodiment of the present invention.
- a semiconductor device that is an example of the electronic device of the present embodiment includes a sealing portion 90 made of a sealing resin and the like, and a first main terminal 11 that protrudes outward from the sealing portion 90. And the second main terminal 12 projecting outward from the sealing portion 90.
- the semiconductor device has a front surface electrically connected to the first main terminal 11, a back surface electrically connected to the second main terminal 12, and is provided in the sealing portion 90.
- front surface side sensing terminal 13 (Hereinafter referred to as “front surface side sensing terminal 13”) and a connection portion 35 that is formed integrally with the head portion 40 and is electrically connected to the front surface side sensing terminal 13. Yes.
- the path of the current flowing through the front surface side sensing terminal 13 and the connection portion 35 does not overlap with the main current path flowing through the second main terminal 12, the semiconductor element 95, and the first main terminal 11. (See FIG. 5).
- the description will be given using the first main terminal 11 through which the main current flows as the first terminal and the front surface side sensing terminal 13 through which the main current flows as the second terminal.
- a mode in which the main current does not flow to the first terminal can be adopted, or a mode in which the second terminal is not used for sensing can be used.
- a semiconductor device is used as an electronic device and a semiconductor element 95 is used as an electronic element.
- the present invention is not limited to this, and the semiconductor device is not necessarily “semiconductor”.
- the semiconductor device may include, for example, a substrate 5 made of an insulating material, and a conductor layer 70 provided on the substrate 5 and made of copper or the like. As shown in FIG. 4, a heat radiating plate 79 made of copper or the like may be provided on the back surface of the substrate 5.
- the second main terminal 12 is connected to the conductor layer 70, and the second main terminal 12 is connected to the back surface of the semiconductor element 95 via the conductor layer 70.
- a resist (not shown) for preventing the conductive adhesive such as solder from flowing out may be provided on the periphery of the connection portion of the second main terminal 12 with the conductor layer 70.
- the back surface of the semiconductor element 95 and the conductor layer 70 may be connected via a conductive adhesive such as solder.
- the head portion 40 and the front surface of the semiconductor element 95 may also be connected via a conductive adhesive 75 such as solder (see FIG. 4).
- the semiconductor element 95 may have a withstand voltage structure such as a guard ring.
- the avoidance portions 31 and 32 are formed integrally with the head portion 40 and avoid contact with the breakdown voltage structure. It may be provided.
- Such avoidance portions 31 and 32 are provided corresponding to the breakdown voltage structure of the semiconductor element 95, and are designed in advance based on the arrangement position of the breakdown voltage structure such as the guard ring, the thickness in the planar direction, and the like.
- the avoidance parts 31 and 32 are the first avoidance part 31 provided between the first main terminal 11 and the head part 40, and the second avoidance provided between the front surface side sensing terminal 13 and the head part 40. Part 32 may be included.
- the first avoiding portion 31 may be a first recessed portion 31 a that is recessed so as to be separated from the semiconductor element 95
- the second avoiding portion 32 may be a second recessed portion 32 a that is recessed so as to be separated from the semiconductor element 95. Good.
- FIG. 7 the aspect in which the recessed part is not used is shown.
- the first main terminal 11 and the second main terminal 12 may be power terminals through which a large amount of current flows.
- the main current path is formed so as to pass through the second main terminal 12, the conductor layer 70, the back surface and the front surface of the semiconductor element 95, the head portion 40, the first avoidance portion 31, and the first main terminal 11. (See FIG. 2).
- the sensing current path is formed so as to pass through the front surface of the semiconductor element 95, the head portion 40, the second avoidance portion 32, the connection portion 35, and the front surface side sensing terminal 13.
- the current flowing from the front surface of the semiconductor element 95 to the head unit 40 passes through the first avoiding unit 31 and the first main terminal 11 along the main current path on the one hand, and the sensing current path on the other hand.
- the second avoiding portion 32, the connecting portion 35, and the front surface side sensing terminal 13 is formed so as to pass through the second main terminal 12, the conductor layer 70, the back surface and the front surface of the semiconductor element 95, the head portion 40, the first avoidance portion 31,
- the front surface side sensing terminal 13, the connecting portion 35, and the head portion 40 may be integrally formed.
- the connection portion 35 and the head portion 40 are formed integrally, but the connection portion 35 and the front surface side sensing terminal 13 are separated. May be.
- the back surface of the connecting portion 35 may be electrically connected to the front surface of the front surface side sensing terminal 13 via a conductive adhesive or the like.
- the first main terminal 11 and the head portion 40 may be integrally formed.
- the first main terminal 11 is not connected to the conductor layer 70 as shown in FIGS. It may be provided separately.
- the conductor layer 70 may not be provided below the first main terminal 11, and the first avoidance portion 31 is externally provided from the side surface of the sealing portion 90 in the middle of the first avoidance portion 31.
- the first main terminal 11 may be exposed to the outside from the side surface of the sealing portion 90 immediately after the first avoiding portion 31.
- the height of the back surface side of the first main terminal 11 may correspond to the height of the back surface side of the front surface side sensing terminal 13.
- the height corresponds to the fact that the thickness of the first main terminal 11 and the front surface side sensing terminal 13 is in a range of 10% with respect to the thickness of the thicker terminal. .
- the thickness T 0 of the first main terminal 11 and the front surface side sensing terminal 13 is the same, the difference between the back surface side height of the first main terminal 11 and the back surface side height of the second main terminal 12 is the thickness.
- the back side height of the first main terminal 11 and the back side height of the front side sensing terminal 13 may match. If they match, the deviation between the height of the back surface side of the first main terminal 11 and the height of the back surface side of the front surface side sensing terminal 13 means that it is within the range of manufacturing errors.
- the back surface side height and connection part of the 1st main terminal 11 are formed integrally, and the connection part 35 and the head part 40 are formed integrally, the back surface side height and connection part of the 1st main terminal 11 are formed.
- the height on the back surface side of the front surface side sensing terminal 13 connected to the surface 35 may correspond (see FIG. 8).
- the height corresponds to the thickness of the thicker terminal of the first main terminal 11 and the front surface side sensing terminal 13 in the range of 10%, as in the above-described embodiment.
- Means that The back side height of the first main terminal 11 and the back side height of the front side sensing terminal 13 may match.
- the deviation between the height of the back surface side of the first main terminal 11 and the height of the back surface side of the front surface side sensing terminal 13 means that it is within the range of manufacturing errors.
- “connected” includes a mode of being “integrated”.
- the front surface side sensing terminal 13, the connection part 35, and the first main terminal 11 may be provided so as to extend in the opposite direction from the head part 40.
- the first main terminal 11 and the front surface side sensing terminal 13 may be used as a jig receiver for receiving the jig 99 (FIG. 7).
- the front surface side sensing terminal 13, the connection part 35, and the 1st main terminal 11 should just be extended in a different direction seeing from the head part 40, and are not restricted to this.
- the front surface side sensing terminal 13 and the connecting portion 35 and the first main terminal 11 may extend so as to form an angle (obtuse angle) of 90 degrees or greater than 90 degrees.
- the head portion 40 may include a second convex portion 42 projecting toward the semiconductor element 95 and a first convex portion 41 projecting from the second convex portion 42 toward the semiconductor element 95. Good.
- the widths of the first avoiding portion 31, the head portion 40, and the second avoiding portion 32 are larger than the widths of the front surface side sensing terminal 13 and the connecting portion 35.
- the widths of the first main terminal 11 and the second main terminal 12 are larger than the widths of the one avoiding part 31, the head part 40 and the second avoiding part 32.
- the widths of the second avoidance unit 32, the connection unit 35, and the front surface side sensing terminal 13 may be narrow.
- the width of each of the second avoidance part 32, the connection part 35, and the front surface side sensing terminal 13 is narrow, and is 1/3 or less or 1/5 or less of the width of the head part 40. It may be.
- the width of the second avoiding portion 32 on the head portion side is large, but it is not necessary to be in such an embodiment.
- FIG. 2 the width of the second avoiding portion 32 on the head portion side is large, but it is not necessary to be in such an embodiment.
- the width of the second avoiding portion 32 on the head portion side is increased, and the width on the head portion side is made to correspond to the width of the head portion 40, whereby the planar head portion 40 of the second avoiding portion 32.
- the width of can be ensured. That is, when forming the head portion 40, the second avoidance portion 32, etc., it is conceivable to punch out a conductive member such as a copper plate. From the viewpoint of ensuring the width of the head portion 40, the head portion 40 is It is preferable that the width of the adjacent second avoiding portion 32 is approximately the same as the width of the head portion 40. On the other hand, when the width of the head portion 40 is sacrificed to some extent, it is conceivable to reduce the width of the second avoiding portion 32 over the whole.
- the second main terminal 12, the front surface side sensing terminal 13, the back surface side sensing terminal 14, and the control terminal 15 protrude from the outside from one side surface of the sealing portion 90, and are sealed.
- the first main terminal 11 protrudes outward from the other side surface of the portion 90.
- the first main terminal 11, the second main terminal 12, the front surface side sensing terminal 13, the back surface side sensing terminal 14, and the control terminal 15 are bent to the front surface side, and are provided on the front surface side. (Not shown).
- This control board is used to control the semiconductor element 95.
- the structure in the sealing portion 90 of the semiconductor device may be line symmetric.
- each of the first main terminal 11, the second main terminal 12, the front surface side sensing terminal 13, the back surface side sensing terminal 14, the control terminal 15, and the conductor layer 70 is symmetrical with respect to an arbitrary straight line. It may be arranged in such a way.
- the wire 19 is also shown.
- the head portion 40 and the connection portion 35 are integrally formed, the influence of wiring resistance can be prevented as much as possible. Further, the current flowing in the front surface side sensing terminal 13 and the connection part 35 in the sensing current path is not overlapped with the main current path flowing in the first main terminal 11, the semiconductor element 95 and the second main terminal 12. Therefore, the influence of the wiring resistance caused by the main current path can also be prevented. For this reason, the voltage of the semiconductor element 95 can be detected more accurately.
- the front side sensing terminal 13 for detecting the voltage in the semiconductor element 95 is connected to the conductor layer 70 connected to the base end portion of the connector, so that the voltage of the semiconductor element 95 is measured. Therefore, the current path flowing through the semiconductor element 95 passes through at least the same connector, and a voltage drop corresponding to the wiring resistance of the connector is detected at the front side sensing terminal 13. The voltage was affected.
- the current flowing from the front surface of the semiconductor element 95 to the head portion 40 is, on the one hand, the first avoiding portion 31 and the first main terminal along the main current path. 11, and on the other hand, the second avoidance unit 32, the connection unit 35, and the front surface side sensing terminal 13 are passed along the sensing current path. For this reason, the voltage of the semiconductor element 95 detected by the front surface side sensing terminal 13 is detected as a more accurate value.
- the front surface side sensing terminal 13 and the connection part 35 and the head part 40 are integrally formed, the front surface side sensing terminal 13 and the connection part are connected. Since the part 35 and the head part 40 can be integrally formed of the same material, the voltage detected by the connection mode as in the case where the front side sensing terminal 13 and the connection part 35 and the head part 40 are separated. Is not affected. For this reason, it is advantageous in that the voltage can be detected more accurately by the front surface side sensing terminal 13.
- connection portion 35 and the front surface sensing terminal 13 are formed separately, the connection portion 35 and the front surface are formed.
- the side sensing terminal 13 is connected without the conductor layer 70, the voltage detected by the connection mode between the connecting portion 35 and the conductor layer 70 and the front surface side sensing terminal 13 and the conductor layer 70 is detected. Not affected. This is advantageous in that the voltage can be accurately detected by the front surface side sensing terminal 13.
- the conductor layer 70 for connecting to the first main terminal 11 is not necessary, and the conductor layer 70 is provided on the back side of the first main terminal 11. It may not be provided.
- the manufacturing cost can be reduced.
- the terminal can be exposed outward from the side surface of the sealing portion 90 without the conductor layer 70 interposed therebetween. It can also be expected that the size in the in-plane direction is reduced by the amount not provided.
- the front side sensing terminal 13 for detecting the voltage in the semiconductor element 95 is connected to the conductor layer 70 connected to the base end portion of the connector. 70 had to be provided.
- the semiconductor element 95 has a breakdown voltage structure
- the avoidance portions 31 and 32 are formed integrally with the head portion 40 and avoid contact with the breakdown voltage structure (FIG. 4 etc. Reference)
- the withstand voltage structure of the semiconductor element 95 and the connection body 50 can be prevented from coming into electrical contact with each other.
- the members from the head unit 40 to the front surface side sensing terminal 13 can be integrally formed, and the current flowing does not change depending on the connection mode as in the case where any of these members is separated. For this reason, the voltage or current can be detected more accurately by the front surface side sensing terminal 13.
- a base end portion 45 that is formed integrally with the head portion 40 and connected to the conductor layer 70 in the sealing portion 90 is provided.
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Abstract
Description
封止部と、
前記封止部から外方に突出する第一主端子と、
前記封止部から外方に突出する第二主端子と、
前記第一主端子におもて面が電気的に接続され、前記第二主端子に裏面が電気的に接続され、前記封止部内に設けられた電子素子と、
前記電子素子のおもて面に接続されるヘッド部と、
前記封止部から外部に突出し、センシングのために用いられるセンシング端子と、
前記ヘッド部と一体に形成され、前記センシング端子に電気的に接続される接続部と、
を備え、
センシング電流経路のうち前記センシング端子及び前記接続部内を流れる電流は、前記第二主端子、前記電子素子及び前記第一主端子を流れる主電流経路と重複しない。
前記センシング端子及び前記接続部と前記ヘッド部とが一体に形成されてもよい。
前記第一主端子と前記ヘッド部とが一体に形成されてもよい。
前記ヘッド部と一体に形成され、前記封止部内で導体層に接続される基端部をさらに備えてもよい。
前記電子素子は耐圧構造を有し、
前記ヘッド部と一体に形成され、前記耐圧構造との接触を回避するための回避部をさらに備えてもよい。
封止部と、前記封止部から外方に突出する第一主端子と、前記封止部から外方に突出する第二主端子と、前記第一主端子におもて面が電気的に接続され、前記第二主端子に裏面が電気的に接続され、前記封止部内に設けられた電子素子と、を有する電子装置に用いられる接続体であって、
前記電子素子のおもて面に接続されるヘッド部と、
前記封止部から外部に突出してセンシングのために用いられるセンシング端子に電気的に接続され、前記ヘッド部と一体に形成される接続部と、
を備え、
センシング電流経路のうち前記接続部内を流れる電流のセンシング電流経路は、前記第二主端子、前記電子素子及び前記第一主端子を流れる主電流経路と重複しない。
《構成》
次に、上述した構成からなる本実施の形態による作用・効果について説明する。
次に、本発明の第2の実施の形態について説明する。
12 第二主端子
13 おもて面側センシング端子
31 第一回避部
32 第二回避部
35 接続部
40 ヘッド部
50,50a 接続体
70 導体層
75 導電性接着剤
90 封止部
95 半導体素子(電子素子)
Claims (6)
- 封止部と、
前記封止部から外方に突出する第一主端子と、
前記封止部から外方に突出する第二主端子と、
前記第一主端子におもて面が電気的に接続され、前記第二主端子に裏面が電気的に接続され、前記封止部内に設けられた電子素子と、
前記電子素子のおもて面に接続されるヘッド部と、
前記封止部から外部に突出し、センシングのために用いられるセンシング端子と、
前記ヘッド部と一体に形成され、前記センシング端子に電気的に接続される接続部と、
を備え、
センシング電流経路のうち前記センシング端子及び前記接続部内を流れる電流は、前記第二主端子、前記電子素子及び前記第一主端子を流れる主電流経路と重複しないことを特徴する電子装置。 - 前記センシング端子及び前記接続部と前記ヘッド部とが一体に形成されることを特徴する請求項1に記載の電子装置。
- 前記第一主端子と前記ヘッド部とが一体に形成されることを特徴する請求項2に記載の電子装置。
- 前記ヘッド部と一体に形成され、前記封止部内で導体層に接続される基端部をさらに備えたことを特徴とする請求項1又は2のいずれかに記載の電子装置。
- 前記電子素子は耐圧構造を有し、
前記ヘッド部と一体に形成され、前記耐圧構造との接触を回避するための回避部をさらに備えることを特徴とする請求項1乃至4のいずれか1項に記載の電子装置。 - 封止部と、前記封止部から外方に突出する第一主端子と、前記封止部から外方に突出する第二主端子と、前記第一主端子におもて面が電気的に接続され、前記第二主端子に裏面が電気的に接続され、前記封止部内に設けられた電子素子と、を有する電子装置に用いられる接続体であって、
前記電子素子のおもて面に接続されるヘッド部と、
前記封止部から外部に突出してセンシングのために用いられるセンシング端子に電気的に接続され、前記ヘッド部と一体に形成される接続部と、
を備え、
センシング電流経路のうち前記接続部内を流れる電流のセンシング電流経路は、前記第二主端子、前記電子素子及び前記第一主端子を流れる主電流経路と重複しないことを特徴する接続体。
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KR1020197025462A KR102282886B1 (ko) | 2017-02-20 | 2017-02-20 | 전자 장치 및 접속체 |
CN201780081394.XA CN110168388B (zh) | 2017-02-20 | 2017-02-20 | 电子装置以及连接体 |
PCT/JP2017/006025 WO2018150555A1 (ja) | 2017-02-20 | 2017-02-20 | 電子装置及び接続体 |
EP17896713.9A EP3584592A4 (en) | 2017-02-20 | 2017-02-20 | ELECTRONIC DEVICE AND CONNECTOR |
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US20200011904A1 (en) | 2020-01-09 |
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CN110168388B (zh) | 2021-10-22 |
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EP3584592A1 (en) | 2019-12-25 |
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