JP5025394B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5025394B2 JP5025394B2 JP2007237766A JP2007237766A JP5025394B2 JP 5025394 B2 JP5025394 B2 JP 5025394B2 JP 2007237766 A JP2007237766 A JP 2007237766A JP 2007237766 A JP2007237766 A JP 2007237766A JP 5025394 B2 JP5025394 B2 JP 5025394B2
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- lead
- semiconductor element
- electrode
- semiconductor device
- strap member
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Description
まず、第1の実施の形態に係る半導体装置の構成を説明する。本発明の実施の形態に係る半導体装置1は、半導体素子2と、半導体素子2のソース電極Sと接続される電極を有する第1のリード3と、半導体素子2のゲート電極Gと接続される電極を有する第2のリード4と、半導体素子2のドレイン電極Dと接続される電極を有する第3のリード5と、半導体素子2のドレイン電極Dと第3のリード5の電極とを電気的に接続する金属膜を被覆したストラップ部材6とを備える。また、これら半導体素子2と、第1のリード3と、第2のリード4と、第3のリード5と、ストラップ部材6とを覆う封止樹脂7(以下、「外囲器7」と表わす。)とを備える。
次に本発明の第2の実施の形態について説明する。なお、第2の実施の形態において、上述の第1の実施の形態において説明した構成要素と同一の構成要素には同一の符号を付し、同一の構成要素の説明は重複するので省略する。
Claims (3)
- 半導体素子と、
前記半導体素子のソース電極と接続される電極を有する第1のリードと、
前記半導体素子のゲート電極と接続される電極を有する第2のリードと、
前記半導体素子のドレイン電極と接続される電極を有する第3のリードと、
前記半導体素子のドレイン電極と前記第3のリードの電極とを電気的に接続する金属膜を接続側全面にわたって被覆したストラップ部材と、
を備え、
前記第1のリード、前記第2のリード、および、前記第3のリードには、基板に配置されると上面が同一平面となるように、基板に実装した際に接続端子となる部分が一端にそれぞれ形成されており、
前記第1のリードの上面には、前記ソース電極と接触するダイボンド材が設けられ、
前記第2のリードの上面には、前記ゲート電極と接触するダイボンド材が設けられ、
前記第3のリードの上面には、前記ソース電極と接する領域に絶縁層が設けられている
ことを特徴とする半導体装置。 - 前記ストラップ部材に被覆される金属膜は金と錫の合金からなることを特徴とする請求項1に記載の半導体装置。
- 半導体素子のソース電極と接続される第1のリードと、前記半導体素子のゲート電極と接続される第2のリードと、前記半導体素子のドレイン電極と接続される第3のリードとが基板に配置されると上面が同一平面となるように、前記第1のリード、前記第2のリード、および、前記第3のリードに、基板に実装した際に接続端子となる部分を一端にそれぞれ形成する工程と、
前記第1のリードの上面に、前記ソース電極と接触するダイボンド材を塗布する工程と、
前記第2のリードの上面に、前記ゲート電極と接触するダイボンド材を塗布する工程と、
前記第3のリードの上面であって前記半導体素子のソース電極と接する領域に絶縁層を形成する工程と、
前記第1のリード、前記第2のリード及び前記第3のリード上に前記半導体素子を接続する工程と、
前記半導体素子のドレイン電極と前記第3のリードとを接続する金属膜を接続側全面にわたってストラップ部材に被覆する工程と、
前記金属膜を被覆された前記ストラップ部材を前記半導体素子のドレイン電極と前記第3のリードに設けられた電極との間で熱圧着により前記金属膜を溶融して電気的に接続する工程と、
を備えることを特徴とする半導体装置の製造方法。
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JP6752639B2 (ja) | 2016-05-02 | 2020-09-09 | ローム株式会社 | 半導体装置の製造方法 |
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