CN101223638A - 具有改进的浪涌能力的肖特基二极管 - Google Patents

具有改进的浪涌能力的肖特基二极管 Download PDF

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CN101223638A
CN101223638A CN 200680022408 CN200680022408A CN101223638A CN 101223638 A CN101223638 A CN 101223638A CN 200680022408 CN200680022408 CN 200680022408 CN 200680022408 A CN200680022408 A CN 200680022408A CN 101223638 A CN101223638 A CN 101223638A
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diode
wafer
anode
cup
schottky diode
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罗萨诺·卡尔塔
路易吉·梅林
迭戈·拉福
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Infineon Technologies Americas Corp
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International Rectifier Corp USA
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Abstract

一种SiC肖特基二极管晶片或Si肖特基二极管晶片，被安装成其外延阳极表面连接到器件封装中的最佳散热器表面，从而大幅度地改进了器件的浪涌电流能力。

Description

具有改进的浪涌能力的肖特基二极管
相关申请
本申请要求在2005年7月5日提交的美国临时申请No.60/696,634的利益和优先权，其全部公开通过引用结合于此。
技术领域
本发明涉及半导体器件，更为具体地涉及一种改进肖特基二极管的浪涌能力的结构。
背景技术
碳化硅(SiC)肖特基二极管是公知的，并且与其硅(Si)对应物相比，碳化硅(SiC)肖特基二极管具有减小的开关损耗、增加的击穿电压以及减小的体积和重量。因此，在诸如转换器/逆变器、马达驱动器等等的许多应用中，这类器件正在取代Si肖特基器件。
然而，例如，高压SiC肖特基二极管，比如额定600伏的SiC肖特基二极管，比等效的Si器件的浪涌能力低。这样，在诸如AC/DC功率因子校正电路等浪涌耐受性是重要的应用中，常规SiC肖特基二极管的浪涌能力是等效的Si肖特基二极管的浪涌能力的四分之一。
发明内容
按照本发明，SiC肖特基晶片或者甚至是硅(Si)肖特基晶片安装在封装中，该封装被设置成更有效地从其外延阳极侧排除热量，该外延阳极侧是所述晶片的最热侧，从而减小“自热”效应，我们已认识到该“自热”效应是SiC肖特基二极管和等效的Si肖特基晶片浪涌能力下降的根源。
这通过将晶片安装成使其阳极侧良好地耦合到传导性散热器表面来实现。因此，SiC晶片或Si晶片可以从其通常方位反转，且围绕有源区域的护圈被良好绝缘，使得有源阳极区域能够用传导性粘合剂焊接或固定到散热器表面而不会使护圈短路。该支撑表面可以是如被用作TO-220型封装等的常规引线框，或者可以是DirectFET型外壳的传导性“罐状物”的内表面。这类DirectFET型外壳或封装在美国专利No.6,624,522(IR-1830)中示出，其全部内容通过引用结合于此。
为确保阳极到散热器表面的良好电和/或热连接，在2005年10月20日提交的、其全部内容通过引用结合于此的共同未决申请序列No.11/255,021(IR-2769)中所示类型的可焊接的顶部金属在所述晶片、尤其是SiC晶片的阳极表面形成。
附图说明
图1示出了多个不同温度时的SiC肖特基二极管正向电压降和正向电流。
图2示出了在图4的现有技术的封装中、在25℃时、针对正向电流的0.5msec脉冲的不同值、作为时间函数的所测量的正向电压降。
图3类似于图2，但示出了当按照如图5所示的本发明安装有肖特基晶片时的下降的正向电压降。
图4是现有技术的SiC肖特基二极管的横截面，其中阳极层或外延形成层背离主封装散热器。
图5示出了图4的结构，其中晶片被翻转，且晶片的较热外延表面侧面向并热耦合到器件封装或装配的主散热器表面。
具体实施方式
我们对SiC肖特基二极管进行了热和电分析，了解到与等效的Si器件相比其浪涌能力的下降与在高电流和相对较长的脉冲条件下、当晶片不能有效地散发所产生的热量时的晶片的“自热”有关。这种在正向传导期间对器件性能的限制是由于在高电流时正温度系数促使热下降的电压降，该电压降增加直到器件毁坏。
这是由于SiC(诸如4H、3C、6H以及其它等的各种多型中的任一个的)的特性所造成的，并且其强烈依赖于温度，特别是对于如通常出现在典型的SiC器件的顶部外延生长层中的轻掺杂材料。
因此，如图1所示，我们从计算和模拟中已认识到由于自热(Rth＝2.5K/W)而导致的温度对正向电压降和正向电流的巨大影响。在图1中，电流饱和是显然的。
该效应强烈依赖于轻掺杂材料(即，承载肖特基阳极触点的外延层)。因此，该层中的迁移率根据如下公式随着温度而下降：
μ ( T ) = μ 0 [ T 300 ] - 2.5
其中，μ0＝400。
从上述可以看出，高结温Tj时的高迁移率将导致高电阻率高正向电压降Vf以及差的浪涌能力。应注意到同样的分析适用于Si肖特基晶片以及SiC肖特基晶片，并且本发明的益处同等适用。
根据本发明，以及根据上述理解，很有必要改进晶片的外延硅侧(阳极)的冷却，因为那是晶片的最热侧。因此，晶片的外延侧必须接触用于该晶片的封装中可用的最佳散热表面。这样，在塑料封装中，其将是支撑晶片的引线框，或者是在DirectFET型封装中的罐状物的内部顶表面。
为此，SiC或其它晶片必须被翻转，使其外延层处于标准封装中的阳极位置。该外延表面上的顶部金属优选为可焊接的，例如使用在2005年10月20日提交的申请序列No.11/255,021(IR-2769)中所公开的可焊接顶部金属。现在在晶片阳极侧的器件背部金属可以是任何适合的可粘结金属。
当使用被翻转的晶片时，需要特殊的保护以防止器件端接区域接触引线框。正如将示出的，可以使用适合的环氧钝化膜(epoxy passivationmask)等。
接下来参考图4，该图示出了现有技术中的SiC肖特基二极管器件20以及用于该器件的封装的至少一部分。肖特基晶片示出为晶片21，其具有衬底22和顶部外延层23。SiC的电阻率和厚度基于所需要的例如600伏的阻塞电压。阻挡金属界面24是顶部外延层23并且接纳合适的阳极触点25，其可以是铝或任何可粘结金属。所述器件的有源区域通过扩散端接护圈26来端接，该护圈通过合适的、可以是氧化物的绝缘层27钝化。Si肖特基晶片中存在类似的结构。
衬底22的阴极侧接纳阴极电极28，该阴极电极可以例如是CrNiAg或任何合适的可焊接金属的三重层(tri-layer)。
用于晶片22的封装包括散热表面，比如图4中的金属引线框30。该封装的任何其它金属层将作为用于晶片22的良好散热器，并且在图4中，晶片22通过传导性接合剂或环氧树脂焊接或固定到引线框30，从而获得良好的热连接。经常地，散热器30还作为用于该封装的阴极触点。
然后，以任何期望的方式来完成该封装，以便完全容纳晶片22。
如先前所指出，该结构产生了未预料到的差浪涌能力。
按照本发明，并且如图4所示，图4的晶片22被翻转使得晶片的外延侧23与该封装的最佳散热器表面接触。
在图5中，与图4相同的组成部分具有相同的标号。然而，环氧钝化物40被加在触点25的边缘周围以及端接钝化27的下面，以防止护圈26意外接触到金属体30。还使用焊接糊41以将阳极触点25热连接或电连接到散热器30。
图2示出在25℃时、针对0.5msec电流脉冲的不同电流值、作为时间函数的图4的器件的正向电压降。所示出的多个曲线是针对15安培(最底线)到40安培(最高线)的脉冲，且具有17、20、22、25、27、30、32以及37安培的中间脉冲电流。注意在37和40安培级别时的正向电压降的显著增加。
图3示出针对图5的晶片的、类似于图2的曲线，其包含本新颖的发明。注意在较高电流脉冲值时显著下降的正向电压降以及由此导致晶片热量降低。
尽管本发明是关于特定实施例而描述的，许多其它变化和修改以及其它用途对于本领域的技术人员是显然的，因此，优选地，本发明不受限于这里的特定公开。

Claims (11)

1.一种肖特基二极管，包括具有主体区域和在主体区域顶部上的外延形成区域的半导体晶圆；在所述外延形成区域顶部上的阳极触点和在所述主体区域的底部表面上的阴极电极；用于所述晶圆的外壳；所述外壳包括具有表面的主散热器；所述阳极触点被热连接并固定到所述主散热器表面，用于从所述晶圆的所述阳极侧的最大散热，从而显著地改进所述二极管的浪涌能力。
2.如权利要求1所述的肖特基二极管，其中至少所述主体区域由硅或碳化硅中之一构成。
3.如权利要求2所述的二极管，其中所述阳极触点为可焊接材料。
4.如权利要求2所述的二极管，其还包括在所述外延形成区域的所述顶部中以及围绕所述阳极触点的扩散护圈；以及设置在所述护圈和所述主散热器表面之间的绝缘圈。
5.如权利要求3所述的二极管，其还包括在所述外延形成区域的所述顶部中以及围绕所述阳极触点的扩散护圈；以及设置在所述护圈和所述主散热器表面之间的绝缘圈。
6.如权利要求2所述的二极管，其中所述主散热器为引线框。
7.如权利要求3所述的二极管，其中所述主散热器为引线框。
8.如权利要求5所述的二极管，其中所述主散热器为引线框。
9.如权利要求2所述的二极管，其中所述封装为具有用于接纳所述晶片的浅杯状物的DirectFET型封装；所述阳极电极连接到所述杯状物的顶部的内部。
10.如权利要求3所述的二极管，其中所述封装为具有用于接纳所述晶片的浅杯状物的DirectFET型封装；所述阳极电极连接到所述杯状物的顶部的内部。
11.如权利要求5所述的二极管，其中所述封装为具有用于接纳所述晶片的浅杯状物的DirectFET型封装；所述阳极电极连接到所述杯状物的顶部的内部。
CN 200680022408 2005-07-05 2006-07-05 具有改进的浪涌能力的肖特基二极管 Pending CN101223638A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104124217A (zh) * 2014-07-17 2014-10-29 西安电子科技大学 一种高温碳化硅功率器件封装结构及其制备方法
CN113540257A (zh) * 2021-06-16 2021-10-22 先之科半导体科技(东莞)有限公司 一种具有高浪涌能力的肖特基二极管

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030015708A1 (en) 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
DE102006001195A1 (de) 2006-01-10 2007-07-12 Sms Demag Ag Verfahren zum Gieß-Walzen mit erhöhter Gießgeschwindigkeit und daran anschließendem Warmwalzen von relativ dünnen Metall-,insbesondere Stahlwerkstoff-Strängen,und Gieß-Walz-Einrichtung
US7804147B2 (en) 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
US7813400B2 (en) 2006-11-15 2010-10-12 Cree, Inc. Group-III nitride based laser diode and method for fabricating same
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US7834367B2 (en) * 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US9287469B2 (en) 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
CN108538924A (zh) * 2018-05-16 2018-09-14 捷捷半导体有限公司 一种塑封SiC肖特基二极管器件及其制造方法
KR102038525B1 (ko) * 2018-09-27 2019-11-26 파워큐브세미(주) Esd 방지 구조를 가진 실리콘카바이드 쇼트키 정션 배리어 다이오드

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206540A (en) * 1978-06-02 1980-06-10 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier
DE10002362A1 (de) * 2000-01-20 2001-08-02 Infineon Technologies Ag Halbleiterbauelement
JP2002158363A (ja) * 2000-11-17 2002-05-31 Matsushita Electric Ind Co Ltd ショットキバリアダイオードの電極構造
US7119447B2 (en) * 2001-03-28 2006-10-10 International Rectifier Corporation Direct fet device for high frequency application
US6777800B2 (en) * 2002-09-30 2004-08-17 Fairchild Semiconductor Corporation Semiconductor die package including drain clip
US7109520B2 (en) * 2003-10-10 2006-09-19 E. I. Du Pont De Nemours And Company Heat sinks

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104124217A (zh) * 2014-07-17 2014-10-29 西安电子科技大学 一种高温碳化硅功率器件封装结构及其制备方法
CN104124217B (zh) * 2014-07-17 2017-12-29 西安电子科技大学 一种高温碳化硅功率器件封装结构及其制备方法
CN113540257A (zh) * 2021-06-16 2021-10-22 先之科半导体科技(东莞)有限公司 一种具有高浪涌能力的肖特基二极管

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