EP1902466A2 - Schottky diode with improved surge capability - Google Patents
Schottky diode with improved surge capabilityInfo
- Publication number
- EP1902466A2 EP1902466A2 EP06774471A EP06774471A EP1902466A2 EP 1902466 A2 EP1902466 A2 EP 1902466A2 EP 06774471 A EP06774471 A EP 06774471A EP 06774471 A EP06774471 A EP 06774471A EP 1902466 A2 EP1902466 A2 EP 1902466A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- diode
- die
- heat sink
- package
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 abstract description 12
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L23/367—Cooling facilitated by shape of device
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- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Definitions
- This invention relates to semiconductor devices and more particularly relates to a structure to improve the surge capability of a Schottky diode.
- SiC Schottky diodes are well known and have reduced switching losses, increased breakdown voltage and reduced volume and weight as compared to their silicon (Si) counterparts. Such devices are therefore replacing Si Schottky devices in numerous applications such as converter/inverters, motor drives, and the like.
- SiC Schottky diodes such as those rated at 600 volts, for example, have a reduced surge capability than the equivalent Si device.
- the surge capability of the conventional SiC Schottky diode was reduced by a factor of 4, compared to the equivalent Si Schottky diode.
- a SiC Schottky die or even a silicon (Si) Schottky die is mounted in a package which is arranged to more
- a SiC die or a Si die may be inverted from its usual orientation and the guard ring surrounding the active area is well insulated so that the active anode area can be soldered or secured with a conductive adhesive to the heat sink surface without shorting the guard ring.
- the support surface may be a conventional lead frame as used for a TO-220 type package, or the like, or may be the interior surface of the conductive "can" of a DirectFET® type housing.
- DirectFET® type housings or packages are shown in U.S. Patent No. 6,624,522 (IR- 1830) the disclosure of which is incorporated herein in its entirety.
- solderable top metal of the type shown in copending application Serial No. 11/255,021, filed October 20, 2005 (IR-2769), the entirety of which is incorporated herein by reference, is formed on the anode surface of the die, particularly a SiC die.
- Figure 1 shows a SiC Schottky diode, forward voltage drop and forward current at a plurality of different temperatures.
- Figure 2 shows a measured forward voltage drop as a function of time for different values of 0.5m sec. pulses of forward current at 25 0 C in the prior art package of Figure 4.
- Figure 3 is like Figure 2 but shows a reduced forward voltage drop when the Schottky die is mounted in accordance with the invention as shown in Figure 5.
- Figure 4 is a cross-section of a SiC Schottky diode of the prior art in which the anode layer, or epitaxially formed layer faces away from the main package heat sink.
- Figure 5 shows the structure of Figure 4 where the die is flipped over, and the hotter epi surface side of the die faces and is thermally coupled to the main heat sink surface of the device package or assembly.
- the SiC or other die must be flipped with the epitaxial layer in the position of the cathode in the standard package.
- the top metal on the epitaxial surface is preferably solderable, for example, using the solderable top metal disclosed in application Serial No. 11/255,021, filed October 20, 2005 (IR-2769).
- the device back metal, now on the cathode side of the die may be any suitable bondable metal.
- FIG. 4 there is shown a prior art SiC Schottky diode device 20 and at least a portion of the package for the device.
- the Schottky die is shown as die 21, having a substrate 22 and a top epi layer 23.
- the resistivity and thickness of the SiC is based on the blocking voltage required, for example, 600 volts.
- a barrier metal interface 24 is atop epi layer 23 and receives a suitable anode contact 25, which may be Al or any bondable metal.
- the active area of the device is terminated by a diffused termination guard ring 26 which is passivated by a suitable insolation layer 27, which could be an oxide.
- a similar structure is present in the Si Schottky die.
- the cathode side of substrate 22 receives a cathode electrode 28 which can, for example, be a tri-layer of CrNiAg or any suitable solderable metal.
- the package for die 22 will include a heat sinking surface such as the metal lead frame 30 in Figure 4. Any other metal layer of the package will serve as a good heat sink for die 22, and in Figure 4, the die 22 is soldered or secured by a conductive cement or epoxy to lead frame 30 so that a good thermal connection is obtained. Frequently, the heat sink 30 will also serve as a cathode contact for the package.
- Figure 2 shows the forward voltage drop for the device of Figure 4 as a function of time for different current values of 0.5m sec. current pulses at 25 0 C.
- the plural curves shown are for pulses of 15 amperes (the bottom-most line) to 40 amperes (the top most line), with intermediate pulse currents of 17, 20, 22, 25, 27, 30, 32 and 37 Amperes. Note the dramatic increase in forward voltage drop at the 37 and 40 ampere levels.
- Figure 3 shows curves like those of Figure 2 for the die of Figure 5, containing the novel invention. Note the substantially reduced forward voltage drop and thus the reduced heating of the die at the higher current pulse values.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69663405P | 2005-07-05 | 2005-07-05 | |
PCT/US2006/026002 WO2007005844A2 (en) | 2005-07-05 | 2006-07-05 | Schottky diode with improved surge capability |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1902466A2 true EP1902466A2 (en) | 2008-03-26 |
EP1902466A4 EP1902466A4 (en) | 2010-09-08 |
Family
ID=37605140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06774471A Withdrawn EP1902466A4 (en) | 2005-07-05 | 2006-07-05 | Schottky diode with improved surge capability |
Country Status (4)
Country | Link |
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EP (1) | EP1902466A4 (en) |
JP (1) | JP2008545279A (en) |
CN (1) | CN101223638A (en) |
WO (1) | WO2007005844A2 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030015708A1 (en) | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
DE102006001195A1 (en) | 2006-01-10 | 2007-07-12 | Sms Demag Ag | Casting-rolling process for continuous steel casting involves coordinating roll speeds and temperatures to provide higher end temperature |
US7804147B2 (en) | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
US7769066B2 (en) | 2006-11-15 | 2010-08-03 | Cree, Inc. | Laser diode and method for fabricating same |
US7813400B2 (en) | 2006-11-15 | 2010-10-12 | Cree, Inc. | Group-III nitride based laser diode and method for fabricating same |
US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
US7999283B2 (en) | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US9287469B2 (en) | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
CN104124217B (en) * | 2014-07-17 | 2017-12-29 | 西安电子科技大学 | A kind of high-temperature carborundum power device packaging structure and preparation method thereof |
CN108538924A (en) * | 2018-05-16 | 2018-09-14 | 捷捷半导体有限公司 | A kind of plastic packaging SiC Schottky diode device and its manufacturing method |
KR102038525B1 (en) * | 2018-09-27 | 2019-11-26 | 파워큐브세미(주) | SiC SBD with ESD protection |
CN113540257A (en) * | 2021-06-16 | 2021-10-22 | 先之科半导体科技(东莞)有限公司 | Schottky diode with high surge capacity |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10002362A1 (en) * | 2000-01-20 | 2001-08-02 | Infineon Technologies Ag | Semiconducting component enables heat to be easily conducted away - has diode with two connections connected to two carrier arrangement connecting parts via current and heat conducting connecting parts |
US20050077615A1 (en) * | 2003-10-10 | 2005-04-14 | Gang Yu | Heat sinks |
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US4206540A (en) * | 1978-06-02 | 1980-06-10 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
JP2002158363A (en) * | 2000-11-17 | 2002-05-31 | Matsushita Electric Ind Co Ltd | Electrode structure of schottky barrier diode |
US7119447B2 (en) * | 2001-03-28 | 2006-10-10 | International Rectifier Corporation | Direct fet device for high frequency application |
US6777800B2 (en) * | 2002-09-30 | 2004-08-17 | Fairchild Semiconductor Corporation | Semiconductor die package including drain clip |
-
2006
- 2006-07-05 CN CN 200680022408 patent/CN101223638A/en active Pending
- 2006-07-05 WO PCT/US2006/026002 patent/WO2007005844A2/en active Application Filing
- 2006-07-05 EP EP06774471A patent/EP1902466A4/en not_active Withdrawn
- 2006-07-05 JP JP2008519694A patent/JP2008545279A/en active Pending
Patent Citations (2)
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DE10002362A1 (en) * | 2000-01-20 | 2001-08-02 | Infineon Technologies Ag | Semiconducting component enables heat to be easily conducted away - has diode with two connections connected to two carrier arrangement connecting parts via current and heat conducting connecting parts |
US20050077615A1 (en) * | 2003-10-10 | 2005-04-14 | Gang Yu | Heat sinks |
Non-Patent Citations (1)
Title |
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See also references of WO2007005844A2 * |
Also Published As
Publication number | Publication date |
---|---|
EP1902466A4 (en) | 2010-09-08 |
JP2008545279A (en) | 2008-12-11 |
WO2007005844A3 (en) | 2007-10-04 |
WO2007005844A2 (en) | 2007-01-11 |
CN101223638A (en) | 2008-07-16 |
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