JP2008545279A - Schottky diode with improved surge capability - Google Patents

Schottky diode with improved surge capability Download PDF

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JP2008545279A
JP2008545279A JP2008519694A JP2008519694A JP2008545279A JP 2008545279 A JP2008545279 A JP 2008545279A JP 2008519694 A JP2008519694 A JP 2008519694A JP 2008519694 A JP2008519694 A JP 2008519694A JP 2008545279 A JP2008545279 A JP 2008545279A
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diode
heat sink
die
package
main heat
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カルタ,ロッサーノ
メルリン,ルイージ
ラッフォ,ディエーゴ
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インターナショナル レクティファイアー コーポレイション
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Priority to PCT/US2006/026002 priority patent/WO2007005844A2/en
Publication of JP2008545279A publication Critical patent/JP2008545279A/en
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Abstract

  The SiC or Si Schottky diode die is mounted so that its epitaxial anode surface (exposed surface of the anode contact 25) connects to the best heat sink in the device package (the top surface of the package metal lead frame 30). The This substantially increases the surge current capability of the device.

Description

  The present invention relates to a semiconductor device, and more particularly to a structure for improving the surge capability of a Schottky diode.

  Silicon carbide (SiC) Schottky diodes are well known and have the characteristics of low switching loss, high breakdown voltage, and small volume and light weight compared to their counterparts in silicon (Si). Thus, this device replaces the Si Schottky diode in many applications such as converter / inverter and motor drive.

  However, a high voltage SiC Schottky diode with a rating of 600 V, for example, has a lower surge capability than an equivalent Si device. Thus, in applications where surge resistance is important, such as AC / DC power factor correction circuits, the surge capability of conventional SiC Schottky diodes is reduced to ¼ compared to equivalent Si Schottky diodes. I was sorry.

  An object of the present invention is to provide a Schottky diode with improved surge capability.

  In accordance with the present invention, a SiC Schottky die, or even a silicon (Si) Schottky die, more efficiently removes heat from the hottest side of the die, the epitaxial anode side, thereby “self-heating”. It is mounted in a package configured to suppress the influence of This self-heating has been recognized by the inventor of the present invention as a cause of reducing the surge capability of SiC Schottky diodes and equivalent Si Schottky diodes.

  This is accomplished by mounting the die with the anode side of the die well bonded to the conductive heat sink surface. Therefore, the SiC die or Si die is flipped from its normal orientation, and the guard ring surrounding the active area is soldered to the heat sink surface or fixed with conductive adhesive without short circuiting the guard ring Well insulated so that it can be done. The support surface may be a conventional lead frame used in TO-220 type packages or the like, or the inner surface of a conductive “can” of a DirectFET® type envelope. Also good. This DirectFET® type envelope or package is shown in US Pat. No. 6,624,522. The entire disclosure of this patent specification is incorporated herein by reference.

  To ensure good electrical and / or thermal connection of the anode to the heat sink surface, it is shown in co-pending US patent application Ser. No. 11 / 255,021 (filing date: October 20, 2005). A kind of solderable top metal is formed on the anode face of the die, in particular a SiC die. The entire disclosure of this US patent application is hereby incorporated by reference.

  The inventors of the present invention have performed thermal and electrical analysis of SiC Schottky diodes and the reduced surge capability for equivalent Si devices is a large current when the die cannot efficiently dissipate the generated heat. And was found to be related to die “self-heating” under relatively long pulse conditions. This places a limit on device performance in the forward conduction state, since at high currents a positive temperature coefficient thermally reduces the voltage drop leading to device breakdown.

  This is due to the properties of SiC (eg, having any of a variety of polytypes such as 4H, 3C, 6H, etc.), especially as low as typically found in the top epitaxial growth layers of typical SiC devices. When having a highly doped material, it is highly temperature dependent.

Therefore, the calculation and simulation as shown in FIG. 1 show that the temperature strongly affects the forward voltage and forward current due to self-heating (R th = 2.5 K / W). Recognized. In FIG. 1, the saturation of the current can be clearly seen.

This effect is strongly dependent on the lightly doped material (ie, the epitaxial layer carrying the anode Schottky contact). Therefore, the mobility in this layer, along with the temperature,
μ (T) = μ 0 [T / 300] −2.5
It decreases according to the formula. Here, μ 0 = 400.

From the above, it can be seen that low mobility at high junction temperature T j results in high resistivity, high forward voltage V f , and poor surge capability. It should be noted that the same analysis applies to SiC Schottky dies and Si Schottky dies, and the benefits of the present invention can be equally applied to these.

  In accordance with the present invention and in accordance with the above understanding, it is very important to improve the cooling of this epitaxial side, since the epitaxial silicon side (anode) of the die is the hottest side of the die. Thus, the epitaxial side of the die should contact the best heat dissipation surface available in the die package. This surface is the lead frame that supports the die in the plastic package, or the top surface inside the can in the DirectFET® type package.

  For this reason, the SiC or other die must be turned over so that the epitaxial layer is at the cathode location of the standard package. The top metal of the epitaxial surface is preferably solderable, for example the solderable top metal disclosed in the aforementioned US patent application Ser. No. 11/255021 is used. The metal on the back side of the device, here the cathode side of the die, can be any suitable bondable metal.

  When flipped dies are used, special protection is required to prevent the device termination area from contacting the lead frame. As will be appreciated, a suitable epoxy resin protective mask or the like may be used.

  With continued reference to FIG. 4, a prior art SiC Schottky diode device 20 and at least a portion of the package of the device are shown. The Schottky die is shown as die 21 and has a substrate 22 and a top epi layer 23. The resistivity and thickness of SiC are based on the required cut-off voltage, for example 600V. The barrier metal (barrier metal) interface 24 is the top surface of the epi layer 23 and receives a suitable anode contact 25 which can be Al or some bondable metal. The active area of the device is terminated by a diffused termination guard ring 26, which is protected by a suitable insulating layer 27, which can be an oxide. A similar structure exists in the Si Schottky die.

  The cathode side of the substrate 22 receives a cathode electrode 28, which can be, for example, a three layer structure of CrNiAg or any suitable solderable metal.

  The package of the die 21 includes a heat sink surface such as the metal lead frame 30 of FIG. Any other metal layer included in the package functions as a good heat sink for die 21. In FIG. 4, the die 22 is either soldered to the lead frame 30 or fixed with a conductive bonding agent or epoxy resin so as to obtain a good thermal connection. The heat sink 30 often also functions as the package cathode contact.

  The package is then completed in any suitable manner for fully accommodating the die 21.

  As mentioned above, this structure results in unexpectedly poor surge capability.

  In accordance with the present invention, the die 21 of FIG. 4 is turned over so that the epi side 23 of the die contacts the best heat sink surface of the package.

  In FIG. 5, elements that are the same as those in FIG. 4 have the same reference numerals. However, in order to prevent the guard ring 26 from inadvertently contacting the metal body 30, a protective body 40 made of an epoxy resin is added around the end of the contact 25 and below the terminal protection 27. A solder paste 41 is used to connect the anode contact 25 to the heat sink 30 thermally and electrically.

  FIG. 2 shows the forward voltage as a function of time for 0.5 ms pulses of various current values for the device of FIG. 4 at 25.degree. The curves shown are for pulses from 15A (bottom curve) to 40A (top curve), with intermediate pulse currents of 17, 20, 22, 25, 27, 30, 32, 35 and 37A. There is a rapid increase in forward voltage at the 37A and 40A levels.

  FIG. 3 shows a similar curve to FIG. 2 for the die of FIG. 5 that includes the novel invention. The forward voltage is substantially reduced, so that heating of the die with higher current pulses is suppressed.

  Although the present invention has been described with reference to specific embodiments thereof, many other variations and modifications and other applications will become apparent to those skilled in the art. Accordingly, the present invention is not limited by the specific examples disclosed herein.

It is a figure which shows the forward voltage and forward current of a SiC Schottky diode in various temperature. FIG. 5 is a diagram showing measured values of forward voltage as a function of time for a 0.5 ms pulse of various current values when the package according to the related art of FIG. FIG. 6 is a view similar to FIG. 2 showing the drop in forward voltage when a Schottky die according to the present invention is mounted as shown in FIG. FIG. 2 is a cross-sectional view showing a prior art SiC Schottky diode with an anode layer, ie, an epitaxially grown layer, on the side of the package away from the main heat sink. FIG. 5 is a cross-sectional view showing a structure in which the die is turned over in the structure of FIG. 4 and the hotter side of the die faces the main heat sink of the device package or assembly and is thermally coupled thereto.

Claims (11)

  1. A semiconductor wafer having a body region and an epitaxial formation region on the body region;
    An anode contact on the epitaxial formation region, and a cathode electrode in contact with a bottom surface of the body region; and an envelope for the wafer;
    A Schottky diode having
    The envelope includes a main heat sink having a surface;
    The anode contact is thermally connected and secured to the surface of the main heat sink to maximize heat removal from the anode side of the wafer and thereby substantially improve the surge capability of the diode. ing;
    diode.
  2.   The diode of claim 1, wherein at least the body region comprises silicon or silicon carbide.
  3.   The diode of claim 2, wherein the anode contact is a solderable material.
  4.   The guard ring diffusion layer in the top of the epitaxial formation region and surrounding the anode contact; and an insulator ring between the guard ring and the surface of the main heat sink. diode.
  5.   The guard ring diffusion layer in the top of the epitaxial formation region and surrounding the anode contact; and an insulator ring between the guard ring and the surface of the main heat sink. diode.
  6.   The diode of claim 2, wherein the main heat sink is a lead frame.
  7.   The diode of claim 3, wherein the main heat sink is a lead frame.
  8.   6. The diode of claim 5, wherein the main heat sink is a lead frame.
  9.   The diode of claim 2, wherein the package is a DirectFET type package having a shallow cup to receive the die; and the anode electrode is connected to the inner surface of the top of the cup.
  10.   4. The diode of claim 3, wherein the package is a DirectFET type package having a shallow cup to receive the die; and the anode electrode is connected to the top inner surface of the cup.
  11.   6. The diode of claim 5, wherein the package is a DirectFET type package having a shallow cup to receive a die; and the anode electrode is connected to the top inner surface of the cup.
JP2008519694A 2005-07-05 2006-07-05 Schottky diode with improved surge capability Pending JP2008545279A (en)

Priority Applications (2)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177537A (en) * 2007-01-19 2008-07-31 Cree Inc Low-voltage diode with reduced parasitic resistance, and manufacturing method

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Publication number Priority date Publication date Assignee Title
US20030015708A1 (en) 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
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KR102038525B1 (en) * 2018-09-27 2019-11-26 파워큐브세미(주) SiC SBD with ESD protection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158363A (en) * 2000-11-17 2002-05-31 Matsushita Electric Ind Co Ltd Electrode structure of schottky barrier diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206540A (en) * 1978-06-02 1980-06-10 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier
DE10002362A1 (en) * 2000-01-20 2001-08-02 Infineon Technologies Ag Semiconducting component enables heat to be easily conducted away - has diode with two connections connected to two carrier arrangement connecting parts via current and heat conducting connecting parts
US7119447B2 (en) * 2001-03-28 2006-10-10 International Rectifier Corporation Direct fet device for high frequency application
US6777800B2 (en) * 2002-09-30 2004-08-17 Fairchild Semiconductor Corporation Semiconductor die package including drain clip
US7109520B2 (en) * 2003-10-10 2006-09-19 E. I. Du Pont De Nemours And Company Heat sinks

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158363A (en) * 2000-11-17 2002-05-31 Matsushita Electric Ind Co Ltd Electrode structure of schottky barrier diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177537A (en) * 2007-01-19 2008-07-31 Cree Inc Low-voltage diode with reduced parasitic resistance, and manufacturing method

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EP1902466A4 (en) 2010-09-08
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CN101223638A (en) 2008-07-16

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