JP2015211178A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2015211178A JP2015211178A JP2014093248A JP2014093248A JP2015211178A JP 2015211178 A JP2015211178 A JP 2015211178A JP 2014093248 A JP2014093248 A JP 2014093248A JP 2014093248 A JP2014093248 A JP 2014093248A JP 2015211178 A JP2015211178 A JP 2015211178A
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Abstract
【解決手段】半導体素子1と、この半導体素子1の電極が形成された面の周縁内に収まり、この半導体素子1を搭載する搭載面3aを有する凸状の搭載部3cを備えた金属部3と、この半導体素子1とこの金属部3とを封止する封止樹脂7と、を備えたこと特徴とする半導体装置。
【選択図】図1
Description
図1は、この発明の実施の形態1の半導体装置の断面構造模式図である。図1において、半導体装置100は、半導体素子1、リードフレーム2、金属部であるヒートシンク3、ボンディングワイヤ4、絶縁層5、金属板6、封止樹脂7、接合材8を備える。
本実施の形態2においては、実施の形態1で用いたヒートシンクを含む冷却構造において、絶縁層として絶縁シートから絶縁基板に変更した点が異なる。このように絶縁層として絶縁基板を用いて構成した場合においても、ヒートサイクルに起因して発生する応力を低減することができる。その結果、半導体素子1と封止樹脂7との界面で生じる封止樹脂7の剥離や封止樹脂7のクラックを防止することができ、半導体装置の絶縁信頼性の向上が可能となる。
本実施の形態3においては、実施の形態1および実施の形態2で用いた封止樹脂で全体を覆ったモールド型の半導体装置において、モールド型から枠材を用いて周囲を囲い、枠材の内部を封止樹脂にて充填するケース型に変更した点が異なる。このように半導体装置をケース型とした場合においても、ヒートサイクルに起因して発生する応力を低減することができる。その結果、半導体素子1と封止樹脂7との界面で生じる封止樹脂7の剥離や封止樹脂7のクラックを防止することができ、半導体装置の絶縁信頼性の向上が可能となる。
実施の形態1における図1に示した半導体装置100を用いて、比較検討を行った。SiC製半導体素子1を一方の面に接合し、他方の面に絶縁層5を設けたヒートシンク3にリードフレーム2を接合し、全体をエポキシ樹脂で封止したモールド型半導体装置を作製した。表1に試作・評価した各種半導体装置の信頼性試験結果を示す。表1には、SiC製半導体素子1の接合材搭載側の面積をS(chip)、ヒートシンク3の凸部のチップ搭載面の面積をS(HS)、ヒートシンク3の厚さをL(HS)(図5におけるB)、ヒートシンク3の凸部の厚さをL(凸)(図5におけるA)、で示した。ヒートシンク3とリードフレーム2は放熱性を考えて銅とした。ヒートシンク3上には、半導体素子1として、温度センサ付きMOSFETとショットキーバリアダイオード(SBD:Schottky Barrier Diode)の2種を搭載した。なお、面積はπ=3として計算、少数第3位で四捨五入している。
Claims (13)
- 半導体素子と、
前記半導体素子の電極が形成された面の周縁内に収まり前記半導体素子を搭載する搭載面を有する凸状の搭載部を備えた金属部と、
前記半導体素子と前記金属部とを封止する封止樹脂と、
を備えたこと特徴とする半導体装置。 - 前記搭載部は、前記金属部と一体的に形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記搭載部は、前記金属部と別体で形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記搭載部は、前記金属部と同じ材料で形成されていることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体装置。
- 前記搭載部は、前記金属部と異なる材料で形成されていることを特徴とする請求項3に記載の半導体装置。
- 前記搭載面の面積(β)と前記半導体素子の面積(α)との関係は、1/2≦β/α<1であることを特徴とする請求項1から請求項5のいずれか1項に記載の半導体装置。
- 前記搭載部の厚さ(A)は、0.25mm<A≦2.5mmであることを特徴とする請求項1から請求項6のいずれか1項に記載の半導体装置。
- 前記搭載部の厚さ(A)と前記搭載部の厚さを含む前記金属部の厚さ(B)との関係は、0.08<A/B<0.92であることを特徴とする請求項1から請求項7のいずれか1項に記載の半導体装置。
- 前記搭載部は、側面部を有し、前記側面部がテーパー形状であることを特徴とする請求項1から請求項8のいずれか1項に記載の半導体装置。
- 前記金属部の前記搭載部が配置された面との反対面側に絶縁層が接合されていることを特徴とする請求項1から請求項9のいずれか1項に記載の半導体装置。
- 前記絶縁層は、絶縁シートであることを特徴とする請求項10に記載の半導体装置。
- 前記絶縁層は、セラミック部材であることを特徴とする請求項10に記載の半導体装置。
- 前記半導体素子は、半導体材料として炭化ケイ素を用いたことを特徴とする請求項1から請求項12のいずれか1項に半導体装置。
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JP2014093248A JP6303776B2 (ja) | 2014-04-29 | 2014-04-29 | 半導体装置 |
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JP2014093248A JP6303776B2 (ja) | 2014-04-29 | 2014-04-29 | 半導体装置 |
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JP2015211178A true JP2015211178A (ja) | 2015-11-24 |
JP6303776B2 JP6303776B2 (ja) | 2018-04-04 |
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JPWO2017119226A1 (ja) * | 2016-01-05 | 2018-07-05 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
JP2020202298A (ja) * | 2019-06-11 | 2020-12-17 | 三菱電機株式会社 | 半導体パワーモジュール |
JP2021044300A (ja) * | 2019-09-06 | 2021-03-18 | 株式会社東芝 | 半導体装置 |
WO2021152795A1 (ja) * | 2020-01-30 | 2021-08-05 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2017119226A1 (ja) * | 2016-01-05 | 2018-07-05 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
CN108352380A (zh) * | 2016-01-05 | 2018-07-31 | 日立汽车系统株式会社 | 功率半导体装置 |
US11011443B2 (en) | 2016-01-05 | 2021-05-18 | Hitachi Automotive Systems, Ltd. | Power semiconductor device including a spacer |
JP2020202298A (ja) * | 2019-06-11 | 2020-12-17 | 三菱電機株式会社 | 半導体パワーモジュール |
JP2021044300A (ja) * | 2019-09-06 | 2021-03-18 | 株式会社東芝 | 半導体装置 |
WO2021152795A1 (ja) * | 2020-01-30 | 2021-08-05 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JPWO2021152795A1 (ja) * | 2020-01-30 | 2021-08-05 | ||
JP7132340B2 (ja) | 2020-01-30 | 2022-09-06 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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