CN105869703A - 一种贵金属复合线及其制备方法 - Google Patents

一种贵金属复合线及其制备方法 Download PDF

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CN105869703A
CN105869703A CN201610370569.6A CN201610370569A CN105869703A CN 105869703 A CN105869703 A CN 105869703A CN 201610370569 A CN201610370569 A CN 201610370569A CN 105869703 A CN105869703 A CN 105869703A
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noble metal
recombination line
raw material
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秦斌
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Qin Wenye
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Abstract

本发明公开了一种贵金属复合线及其制备方法，其中的复合线包括内层线芯和包覆在线芯上的包覆外层，该包覆外层为镍合金层，内层线芯为贵金属线芯，两者复合形成贵金属复合线。在制备该贵金属复合线时，将镍合金原料制备成空心管坯；将贵金属原料制备成线芯；最后将线芯嵌入空心管坯中，并拉拔成贵金属复合线。本贵金属复合线，有效降低贵金属的使用量，大大降低生产成本；同时本贵金属复合线性能和使用寿命与单独用贵金属材料一致，能够很好的达到测电极中的使用要求工艺要求。

Description

一种贵金属复合线及其制备方法
技术领域
本发明涉及一种金属材料，具体涉及一种贵金属复合线。
背景技术
世界各国都非常重视复合线材的研究，无论是替代材料还是制备工艺技术，其开发与应用均已取得了很大的进展。
随着集成电路及半导体器件封装技术向多引线化、高集成度和小型化发展，封装材料要求采用线径更细、电化学性能更好的键合丝材进行窄间距、长距离的键合。同时，为了降低生产成本，如何有效的降低贵金属用量，节约资源是本领域的所要解决的问题。
例如，对于一些需要长期在高温高压环境中使用的电极材料，为了延长寿命提高性能，目前较多在中心电极上焊入贵金属材料铂，或者铑，钯，铱及其合金。由于贵金属资源的稀有价值高，为此，如何在不影响保证金属复合线的性能情况下，节约贵金属的使用量，节约资源是本领域亟需解决的问题。
发明内容
针对现有贵金属复合线中贵金属使用量大，生产成本高的问题，本发明的主要目的在于提供一种性能可靠且贵金属使用量低的贵金属复合线；同时针对该贵金属复合线还提供一种对应的制备方法。
为了达到上述目的，本发明采用如下的技术方案：
方案1：提供一种贵金属复合线，所述复合线包括内层线芯和包覆在线芯上的包覆外层，所述包覆外层为镍合金层，内层线芯为贵金属线芯，两者复合形成贵金属复合线。
优选的，所述贵金属复合线的直径为0.4mm～1.5mm。
优选的，所述包覆外层为壁厚0.1～0.5mm的空心管状结构。
优选的，所述内层线芯的直径为0.2～0.8mm。
优选的，所述镍合金层的各组分及重量份数如下：
镍 20～90份；
铬 10～30份；
铁 10～60份。
优选的，所述贵金属线芯为铂线芯或者铂、铑、钯以及铱组成的合金线芯。
方案2：提供一种贵金属复合线制备方法，所述制备方法包括如下步骤：
将镍合金原料制备成空心管坯；
将贵金属原料制备成线芯；
将线芯嵌入空心管坯中，并拉拔成贵金属复合线。
优选的，所述制备方法中首先对镍合金原料配料进行真空熔炼成锭；接着对熔炼后的成锭原料进行锻造；接着进行热轧，最后对热轧后的原料冷拉成空心管坯备用。
优选的，所述制备方法中首先将贵金属原料配料后熔炼成锭，接着进行锻造，最后锻造后的原料拉拔形成线芯备用。
优选的，所述制备方法中将镍合金原料制备成直径6mm，壁厚1mm的空心管坯；将贵金属原料制备成直径3-4mm的线芯，该线芯嵌入空心管坯后整体经过退火拉拔成外径0.4mm～1.5mm的线材作为成品。
根据上述方案构成的贵金属复合线，有效降低贵金属的使用量，大大降低生产成本；同时本贵金属复合线性能和使用寿命与单独用贵金属材料一致，能够很好的达到测电极中的使用要求工艺要求。
附图说明
以下结合附图和具体实施方式来进一步说明本发明。
图1为本发明实例中贵金属复合线的剖视图。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体图示，进一步阐述本发明。
参见图1，其所示为本实例中提供的贵金属复合线的剖视图。由图可知，该贵金属复合线100主要由内层线芯101和包覆外层102复合形成。
进一步的，包覆外层102由耐高温耐腐蚀的合金形成，具体为镍合金层102；而内层线芯101采用贵金属线芯，镍合金的包覆外层102包覆在贵金属线芯101上，由此形成贵金属复合线。
在具体实现时，作为包覆外层102的镍合金层，采用熔点为1445℃的镍作为主要成份，并按照一定的比例加入铬和铁组成镍合金，各组分及重量份数如下：
镍 20～90份；
铬 10～30份；
铁 10～60份。
而作为内层线芯101的贵金属线芯，具体直接采用铂制成；也可采用以铂为主要成分，并添铑，钯，铱组成的合金来制成。
在此基础上，该贵金属复合线整体为圆柱形结构，其直径为0.4mm～1.5mm；与之配合的，镍合金层102整体为一匀厚的空心管状结构，且壁厚0.2～0.5mm；而内层线芯101整体为实心圆柱形，且直径为0.2～0.8mm，并整体嵌设在镍合金层102中。
由此构成的贵金属复合线100，可根据需要合理控制线芯贵金属的直径要求，从而能够节约贵金属的使用量，节约资源，降低生成成本。同时采用特定尺寸配合的复合线材结构能够很好的保证贵金属复合线的性能，大大提高其使用寿命，能够使其与单独用贵金属材料一致。
针对上述的贵金属复合线，本实例具体通过外层的镍合金层与内层的贵金属线芯的复合拉拔成线材的生产工艺来形成，以此降低贵金属的用量，节约资源。其整个的生产过程如下：
1.制备空心管坯
本实例中选用耐高温、耐腐蚀的合金作为外层材料，镍由于熔点为1445℃，故采用熔点为1445℃的镍作为主要成份，并按照一定的比例加入铬和铁组成的镍合金，作为外层材料来形成镍合金层。
该镍合金具体为无明显磁性的材料，其中各组分的配比如下(按重量份计)：
镍 20～90份；
铬 10～30份；
铁 10～60份。
根据上述配比，将配好的镍合金原料通过真空熔炼成锭；接着对成锭的原料进行锻造；接着对锻造好的原料进行热轧；最后对热轧好的原料进行冷拉成空心管坯备用。
该空心管坯整体空心圆柱形，其整体直径6mm，而壁厚1mm。
2.制备线芯
选用铂，或者添入铑，钯，铱成为合金作为内层线芯材料。由于铂熔点1770℃左右，本实例以铂作为主要成分或添铑，钯，铱组成合金配料。
将配料通过真空熔炼或中频炉熔炼成锭；接着对成锭原料经过锻造；最后将经锻造的原料进行拉拔形成线芯备用。
这里拉拔成的内层线芯整体为实心圆柱形(圆棒形)，其直径在3mm～4mm。
3.拉拔成型
首先，将制得的直径在3mm～4mm的内层线芯嵌入到直径6mm，壁厚1mm外层空心管坯中；
接着，将组装好的复合材料再经过退火拉拔成外径0.4mm～1.5mm的线材作为成品，完成整个生产过程。
对于最终形成的贵金属复合线，其外径尺寸优选0.4mm、0.5mm、0.6mm、0.7mm、0.8mm、0.9mm、1mm、1.1mm、1.2mm、1.3mm、1.4mm、1.5mm。
由此，根据用户的需要可以合理控制芯材贵金属的直径要求，贵金属线芯直径控制在0.2～0.8mm；直径尺寸优选0.2mm、0.3mm、0.4mm、0.5mm、0.6mm、0.7mm、0.8mm。
而外层镍合金层的厚度控制在0.1～0.5mm，优选厚度0.1mm、0.2mm、0.3mm、0.4mm、0.5mm。
整个生产工艺简单、效率高，且形成的贵金属复合线性能稳定可靠，经过测试本贵金属复合线使用寿命和单独用贵金属材料一致。
下面结合具体实施例，进一步阐述本方案。应理解，这些实施例仅用于说明本方案而不用于限制本方案的范围。
除非另有定义或说明，本文中所使用的所有专业与科学用语与本领域技术熟练人员所熟悉的意义相同。此外任何与所记载内容相似或均等的方法及材料皆可应用于本专利方法中。
实例1
本实例具体通过外层的镍合金层，内层的贵金属线芯的复合生产方法达到降低贵金属的用量，再通过合理配比组合，拉成线材。其具体的生产过程如下：
1.制备空心管坯
本实例中选用耐高温、耐腐蚀的合金作为外层材料，镍由于熔点为1445℃，故采用熔点为1445℃的镍作为主要成份，并按照一定的比例加入铬和铁组成的镍合金，作为外层材料来形成镍合金层。
该镍合金具体为无明显磁性的材料，其中各组分的配比如下(按重量份计)：
镍 90份；
铬 10份；
铁 10份。
根据上述配比，将配好的镍合金原料通过真空熔炼成锭；接着对成锭的原料进行锻造；接着对锻造好的原料进行热轧；最后对热轧好的原料进行冷拉成空心管坯备用。
该空心管坯整体空心圆柱形，其整体直径6mm，而壁厚1mm。
2.制备线芯
本实例以铂作为主要成分或添铑，钯，铱组成合金配料。
将配料通过真空熔炼或中频炉熔炼成锭；接着对成锭原料经过锻造；最后将经锻造的原料进行拉拔形成线芯备用。
这里拉拔成的内层线芯整体为实心圆柱形(圆棒形)，其直径为3mm。
3.拉拔成型
首先，将制得的内层线芯嵌入到外层空心管坯中；
接着，将组装好的复合材料再经过退火拉拔成外径0.4mm的线材作为成品，其中贵金属线芯直径控制在0.2mm；而外层镍合金层的厚度控制在0.1mm，完成整个生产过程。
整个生产工艺简单、效率高，且形成的贵金属复合线性能稳定可靠，经过测试本贵金属复合线使用寿命和单独用贵金属材料一致。
实例2
本实例具体通过外层的镍合金层，内层的贵金属线芯的复合生产方法达到降低贵金属的用量，再通过合理配比组合，拉成线材。其具体的生产过程如下：
1.制备空心管坯
本实例中选用耐高温、耐腐蚀的合金作为外层材料，镍由于熔点为1445℃，故采用熔点为1445℃的镍作为主要成份，并按照一定的比例加入铬和铁组成的镍合金，作为外层材料来形成镍合金层。
该镍合金具体为无明显磁性的材料，其中各组分的配比如下(按重量份计)：
镍 50份；
铬 20份；
铁 30份。
根据上述配比，将配好的镍合金原料通过真空熔炼成锭；接着对成锭的原料进行锻造；接着对锻造好的原料进行热轧；最后对热轧好的原料进行冷拉成空心管坯备用。
该空心管坯整体空心圆柱形，其整体直径6mm，而壁厚1mm。
2.制备线芯
本实例以铂作为主要成分或添铑，钯，铱组成合金配料。
将配料通过真空熔炼或中频炉熔炼成锭；接着对成锭原料经过锻造；最后将经锻造的原料进行拉拔形成线芯备用。
这里拉拔成的内层线芯整体为实心圆柱形(圆棒形)，其直径为4mm。
3.拉拔成型
首先，将制得的内层线芯嵌入到外层空心管坯中；
接着，将组装好的复合材料再经过退火拉拔成外径1mm的线材作为成品，其中贵金属线芯直径控制在0.4mm；而外层镍合金层的厚度控制在0.3mm，完成整个生产过程。
整个生产工艺简单、效率高，且形成的贵金属复合线性能稳定可靠，经过测试本贵金属复合线使用寿命和单独用贵金属材料一致。
实例3
本实例具体通过外层的镍合金层，内层的贵金属线芯的复合生产方法达到降低贵金属的用量，再通过合理配比组合，拉成线材。其具体的生产过程如下：
1.制备空心管坯
本实例中选用耐高温、耐腐蚀的合金作为外层材料，镍由于熔点为1445℃，故采用熔点为1445℃的镍作为主要成份，并按照一定的比例加入铬和铁组成的镍合金，作为外层材料来形成镍合金层。
该镍合金具体为无明显磁性的材料，其中各组分的配比如下(按重量份计)：
镍 30份；
铬 25份；
铁 45份。
根据上述配比，将配好的镍合金原料通过真空熔炼成锭；接着对成锭的原料进行锻造；接着对锻造好的原料进行热轧；最后对热轧好的原料进行冷拉成空心管坯备用。
该空心管坯整体空心圆柱形，其整体直径6mm，而壁厚1mm。
2.制备线芯
本实例选用铂作为内层线芯材料。将配料通过真空熔炼或中频炉熔炼成锭；接着对成锭原料经过锻造；最后将经锻造的原料进行拉拔形成线芯备用。
这里拉拔成的内层线芯整体为实心圆柱形(圆棒形)，其直径为3mm。
3.拉拔成型
首先，将制得的内层线芯嵌入到外层空心管坯中；
接着，将组装好的复合材料再经过退火拉拔成外径1.4mm的线材作为成品，其中贵金属线芯直径控制在0.6mm；而外层镍合金层的厚度控制在0.4mm，完成整个生产过程。
整个生产工艺简单、效率高，且形成的贵金属复合线性能稳定可靠，经过测试本贵金属复合线使用寿命和单独用贵金属材料一致。
实例4
本实例具体通过外层的镍合金层，内层的贵金属线芯的复合生产方法达到降低贵金属的用量，再通过合理配比组合，拉成线材。其具体的生产过程如下：
1.制备空心管坯
本实例中选用耐高温、耐腐蚀的合金作为外层材料，镍由于熔点为1445℃，故采用熔点为1445℃的镍作为主要成份，并按照一定的比例加入铬和铁组成的镍合金，作为外层材料来形成镍合金层。
该镍合金具体为无明显磁性的材料，其中各组分的配比如下(按重量份计)：
镍 20份；
铬 20份；
铁 60份。
根据上述配比，将配好的镍合金原料通过真空熔炼成锭；接着对成锭的原料进行锻造；接着对锻造好的原料进行热轧；最后对热轧好的原料进行冷拉成空心管坯备用。
该空心管坯整体空心圆柱形，其整体直径6mm，而壁厚1mm。
2.制备线芯
本实例选用铂作为内层线芯材料。将配料通过真空熔炼或中频炉熔炼成锭；接着对成锭原料经过锻造；最后将经锻造的原料进行拉拔形成线芯备用。
这里拉拔成的内层线芯整体为实心圆柱形(圆棒形)，其直径为3mm。
3.拉拔成型
首先，将制得的内层线芯嵌入到外层空心管坯中；
接着，将组装好的复合材料再经过退火拉拔成外径1.5mm的线材作为成品，其中贵金属线芯直径控制在0.8mm；而外层镍合金层的厚度控制在0.35mm，完成整个生产过程。
整个生产工艺简单、效率高，且形成的贵金属复合线性能稳定可靠，经过测试本贵金属复合线使用寿命和单独用贵金属材料一致。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (10)

1.一种贵金属复合线，所述复合线包括内层线芯和包覆在线芯上的包覆外层，其特征在于，所述包覆外层为镍合金层，内层线芯为贵金属线芯，两者复合形成贵金属复合线。
2.根据权利要求1所述的一种贵金属复合线，其特征在于，所述贵金属复合线的直径为0.4mm～1.5mm。
3.根据权利要求1所述的一种贵金属复合线，其特征在于，所述包覆外层为壁厚0.1～0.5mm的空心管状结构。
4.根据权利要求1所述的一种贵金属复合线，其特征在于，所述内层线芯的直径为0.2～0.8mm。
5.根据权利要求1所述的一种贵金属复合线，其特征在于，所述镍合金层的各组分及重量份数如下：
镍 20～90份；
铬 10～30份；
铁 10～60份。
6.根据权利要求1所述的一种贵金属复合线，其特征在于，所述贵金属线芯为铂线芯或者铂、铑、钯以及铱组成的合金线芯。
7.一种贵金属复合线制备方法，其特征在于，所述制备方法包括如下步骤：
将镍合金原料制备成空心管坯；
将贵金属原料制备成线芯；
将线芯嵌入空心管坯中，并拉拔成贵金属复合线。
8.根据权利要求7所述的一种贵金属复合线制备方法，其特征在于，所述制备方法中首先对镍合金原料配料进行真空熔炼成锭；接着对熔炼后的成锭原料进行锻造；接着进行热轧，最后对热轧后的原料冷拉成空心管坯备用。
9.根据权利要求7所述的一种贵金属复合线制备方法，其特征在于，所述制备方法中首先将贵金属原料配料后熔炼成锭，接着进行锻造，最后锻造后的原料拉拔形成线芯备用。
10.根据权利要求7所述的一种贵金属复合线制备方法，其特征在于，所述制备方法中将镍合金原料制备成直径6mm，壁厚1mm的空心管坯；将贵金属原料制备成直径3-4mm的线芯，该线芯嵌入空心管坯后整体经过退火拉拔成外径0.4mm～1.5mm的线材作为成品。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109979687A (zh) * 2019-04-23 2019-07-05 张裕仕 一种纯银&纯金平衡导体的制作工艺
CN114932209A (zh) * 2022-05-07 2022-08-23 牧星生物材料(太仓)有限公司 一种铂镍复合导丝制备工艺

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324268A (en) * 1976-08-19 1978-03-06 Toshiba Corp Pro duction of semiconductor device and bonding wire for the same
CN1298186A (zh) * 2000-12-02 2001-06-06 常州吉星电子器材有限公司 高电导铜包钢复合线缆的包覆工艺
CN101405863A (zh) * 2006-03-27 2009-04-08 飞兆半导体公司 使用涂覆有金属的导线的半导体装置及电部件制造
CN101667566A (zh) * 2009-09-20 2010-03-10 宁波康强电子股份有限公司 一种银基覆金的键合丝线及其制造方法
CN201681829U (zh) * 2010-04-07 2010-12-22 袁毅 一种通过镀镍键合铜丝连接的半导体封装件
CN103056191A (zh) * 2012-12-23 2013-04-24 昆明贵金属研究所 一种贵金属复合键合丝材制备新方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324268A (en) * 1976-08-19 1978-03-06 Toshiba Corp Pro duction of semiconductor device and bonding wire for the same
CN1298186A (zh) * 2000-12-02 2001-06-06 常州吉星电子器材有限公司 高电导铜包钢复合线缆的包覆工艺
CN101405863A (zh) * 2006-03-27 2009-04-08 飞兆半导体公司 使用涂覆有金属的导线的半导体装置及电部件制造
CN101667566A (zh) * 2009-09-20 2010-03-10 宁波康强电子股份有限公司 一种银基覆金的键合丝线及其制造方法
CN201681829U (zh) * 2010-04-07 2010-12-22 袁毅 一种通过镀镍键合铜丝连接的半导体封装件
CN103056191A (zh) * 2012-12-23 2013-04-24 昆明贵金属研究所 一种贵金属复合键合丝材制备新方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109979687A (zh) * 2019-04-23 2019-07-05 张裕仕 一种纯银&纯金平衡导体的制作工艺
CN114932209A (zh) * 2022-05-07 2022-08-23 牧星生物材料(太仓)有限公司 一种铂镍复合导丝制备工艺

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