CN102623428A - 半导体模块 - Google Patents

半导体模块 Download PDF

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Publication number
CN102623428A
CN102623428A CN2012101027036A CN201210102703A CN102623428A CN 102623428 A CN102623428 A CN 102623428A CN 2012101027036 A CN2012101027036 A CN 2012101027036A CN 201210102703 A CN201210102703 A CN 201210102703A CN 102623428 A CN102623428 A CN 102623428A
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China
Prior art keywords
power device
device chip
metal pattern
lead frame
semiconductor module
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Pending
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CN2012101027036A
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English (en)
Inventor
太田达雄
筱原利彰
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN102623428A publication Critical patent/CN102623428A/zh
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    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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Abstract

本发明的目的在于提供一种电极端子的可靠性高并且能够以低成本制造的半导体模块。本发明的半导体模块具备：绝缘板（2）；多个金属图案（22、23），在绝缘板（2）上彼此离开地形成；功率器件芯片（3），焊接在一个金属图案（22）上；引线框架（5），焊接在未焊接有功率器件芯片（3）的金属图案（23）上和功率器件芯片（3）上；外部主电极（51），设置于外围壳体（8），在未接合有功率器件芯片（3）的金属图案（23）上利用引线键合与引线框架（5）接合；密封树脂（7），利用灌注形成，密封功率器件芯片（3）、引线框架（5）、金属图案（22、23）。

Description

半导体模块
技术领域
本发明涉及半导体模块，特别涉及功率器件芯片与外部电极的连接结构。
背景技术
作为从功率器件取出电流的手段，从20世纪80年代开始实施使用铝或金等细的引线对功率器件的电极部和外部电极进行连接的引线键合的方法（参照专利文献1）。但是，根据该方法，功率器件的反复导通/截止所引起的热应力使引线键合的接合部的寿命缩短，所以，当使长寿命优先时，需要将最大接合温度设计得较低，导致功率模块的大型化或高成本化。
因此，为了提高接合部的可靠性，提出了在元件表面直接将引线框架与元件的电极部连接的直接引线键合（DLB）方式。
此外，关于功率器件的密封方法，采用将加热加压后的树脂注入到封闭了的模具中进行成形的传递模塑方式（参照专利文献2）。
专利文献1：日本特开2010-238892号公报；
专利文献2：日本特开2011-103367号公报。
DLB方式提高了接合部的可靠性，但是，与引线键合相比，存在成本高的问题。
此外，利用传递模塑方式进行的功率器件的密封具有优良的可靠性和量产性，但是，由于模具等的初期投资需要很多，所以，存在对端子形状或尺寸的自由度有较大的制约、当应用于多品种或少量的产品组时成本变高的问题。
发明内容
本发明是鉴于上述问题而提出的，其目的在于提供一种电极端子的可靠性高并且能够以低成本制造的半导体模块。
本发明提供一种半导体模块，具备：绝缘基板；多个金属图案，在所述绝缘基板上彼此离开地形成；功率器件芯片，焊接在一个所述金属图案上；引线框架，焊接在未焊接有所述功率器件芯片的所述金属图案上和所述功率器件芯片上；外部主电极，设置于外围壳体，在未接合有所述功率器件芯片的所述金属图案上利用引线键合与所述引线框架接合；密封树脂，利用灌注形成，密封所述功率器件芯片、所述引线框架、所述金属图案。
根据本发明的半导体模块，由于在功率器件芯片上焊接引线框架，所以，该接合部对功率器件芯片的导通/截止所引起的热循环应力具有高的耐受性。
并且，从引线框架的与搭载有功率器件芯片的金属图案不同的金属图案上的部分利用引线键合与外部电极接合。该接合部的引线框架与功率器件芯片上部相比为温度，所以，采用引线键合能够减少成本并且提高该接合部的可靠性。
附图说明
图1是示出实施方式1的半导体模块的结构的剖面图。
图2是示出实施方式2的半导体模块的结构的剖面图。
图3是示出实施方式3的半导体模块的结构的剖面图。
图4是示出实施方式4的半导体模块的结构的剖面图。
具体实施方式
（实施方式1）
图1是示出实施方式1的半导体模块的结构的剖面图。在该半导体模块中，在由铜、铝或者AlSiC等金属构成的基底板（base plate）1上经由焊料31接合有绝缘基板。绝缘基板是在陶瓷制的绝缘板2的两面利用刻蚀法形成有铜或铝的金属图案的结构。在绝缘板2的背面形成有金属图案21，金属图案21经由焊料31与基底板1接合。在绝缘板2的表面形成有金属图案22、23。在金属图案22上经由焊料32、34分别接合有IGBT或MOSFET等功率器件芯片3、续流二极管芯片4。
在功率器件芯片3、续流二极管芯片4上分别经由焊料33、35接合引线框架5，将功率器件芯片3和续流二极管芯片4并联连接。引线框架5以一端与功率器件芯片3接合并且以另一端经由焊料36与金属图案23接合。再有，如果引线框架5使用铜，则能够提高引线框架5自身的耐热性。
外部主电极51以及外部信号电极52在半导体模块的外围壳体8中利用嵌件成型（insert molding）或注塑成型（outsert molding）来形成。引线框架5在与金属图案23的接合位置利用铝线41与外部主电极51连接。外部信号电极52利用铝线42与功率器件芯片3连接。通常，铝线41的直径为200～500μm，铝线42的直径为50～150μm。
在绝缘板2上形成金属图案21、22、23之后，以包围绝缘板2的方式利用成形模具形成由Si橡胶构成的堤部（dam）6。在堤部6的内部灌注（potting）液状的环氧树脂7并使其热硬化。环氧树脂7保护焊料33、35免受功率器件芯片3或续流二极管芯片4的导通/截止引起的热循环应力的影响。
并且，在外围壳体8的内部，从环氧树脂7之上填充硅酮凝胶（silicone gel）等低弹性的密封树脂9，对未被环氧树脂7密封的铝线41、42、外部主电极51、外部信号电极52进行绝缘保护。
<效果>
实施方式1的半导体模块具备：绝缘板2；在绝缘板2上彼此离开地形成的多个金属图案22、23；功率器件芯片3，焊接在金属图案22上；引线框架5，焊接在未焊接有功率器件芯片3的金属图案23上和功率器件芯片3上；外部主电极51，设置于外围壳体8，在未接合有功率器件芯片3的金属图案23上利用引线键合与引线框架5接合；密封树脂（环氧树脂7），利用灌注形成，密封功率器件芯片3、引线框架5、金属图案22、23。由于在功率器件芯片3上焊接引线框架5，所以，与引线键合相比，接合面积增加，对功率器件芯片3的导通/截止工作所引起的热应力具有高的可靠性。此外，由于引线框架5的一端接合在与搭载了功率器件芯片3或续流二极管芯片4的金属图案22分离的金属图案23上，所以，能够降低工作时的引线框架5的温度。并且，引线框架5和外部主电极51的接合是从温度比功率器件芯片3附近低的金属图案23上利用引线键合进行的，所以，即使是低价的引线键合也保持高的可靠性。此外，环氧树脂7利用灌注形成，所以，存在对端子形状或尺寸的制约少、也容易应用于多品种或少量的产品组的优点。
此外，在实施方式1的半导体模块中，利用灌注形成的密封树脂使用液状的环氧树脂，由此，保护功率器件芯片3上表面的焊接部免受芯片的导通/截止工作引起的热应力的影响。
此外，实施方式1的半导体模块在外围壳体8的内部具备对灌注的密封树脂7以外的部分进行密封的硅酮树脂9，所以，能够绝缘保护外部主电极51、铝线41。
（实施方式2）
通过实验确认了在不同极间产生绝缘恶化的概率高，所以，在实施方式2中，使绝缘板2上的金属图案为单一并且为一个电位，由此，谋求绝缘性能的提高。
图2是示出实施方式2的半导体模块的结构的剖面图。在该半导体模块中，在绝缘板2上形成单一的金属图案22，在金属图案22上利用焊料32、34分别接合功率器件芯片3和续流二极管芯片4。并且，在金属图案22的远离功率器件芯片3的端部利用焊料37接合有绝缘垫片（spacer）10，在绝缘垫片10上经由焊料36接合有引线框架5。该绝缘垫片10是为了使引线框架5与金属图案22绝缘而设置的。此外，具有与环氧树脂7同等（±20%）的线膨胀系数，也起到支承铝线41的载荷的作用。
在功率器件芯片3、续流二极管芯片4上分别经由焊料33、35接合引线框架5，将IGBT或MOSFET等功率器件芯片3和续流二极管芯片4并联连接。引线框架5以一端与功率器件芯片3接合，以另一端经由焊料36与绝缘垫片10接合。引线框架5在与绝缘垫片10的接合位置利用铝线41与外部主电极51连接。
这以外的结构与实施方式1相同，所以省略说明。
<效果>
实施方式2的半导体模块具备：绝缘板2；金属图案22，形成在绝缘板2上；单独焊接在金属图案22上的功率器件芯片3和绝缘垫片10；焊接在功率器件芯片3上和绝缘垫片10上的引线框架5；外部主电极51，设置于外围壳体8，在绝缘垫片10上利用引线键合与引线框架5接合；密封树脂7，利用灌注形成，密封功率器件芯片3、绝缘垫片10、引线框架5、金属图案22。在绝缘板2上设置单一的金属图案22，由此，与对金属图案进行分割的情况相比，引线框架5和铝线41的接合部的温度变高，但是，由于避免了在不同极间产生的绝缘恶化，所以绝缘强度提高。此外，使在基底板1和绝缘基板间的焊料中所产生的应力平均化。
（实施方式3）
<结构>
图3是示出实施方式3的半导体模块的结构的剖面图。在实施方式3中，与实施方式1、2相比，使引线框架5的尺寸变小，谋求半导体模块的小型化。
在绝缘板2的表面形成有金属图案22。在金属图案22上经由焊料32、34分别接合有功率器件芯片3、续流二极管芯片4。
在功率器件芯片3、续流二极管芯片4上分别经由焊料33、35接合有引线框架5，将IGBT或MOSFET等功率器件芯片3和续流二极管芯片4并联连接。引线框架5在续流二极管芯片4上利用铝线41与外部主电极51连接。续流二极管芯片4与功率器件芯片3相比温度上升小，所以，与从功率器件芯片3上的引线框架5进行引线键合相比，能够确保接合部的可靠性。这以外的结构与实施方式1相同，所以省略说明。
<效果>
实施方式3的半导体模块具备：绝缘板2；金属图案22，形成在绝缘板2上；单独焊接在金属图案22上的功率器件芯片3和续流二极管芯片4；焊接在功率器件芯片3上和续流二极管芯片4上的引线框架5；外部主电极51，设置于外围壳体8，在续流二极管芯片4上利用引线键合与引线框架5接合；密封树脂7，利用灌注形成，密封功率器件芯片3、续流二极管芯片4、引线框架5、金属图案22。从续流二极管芯片4上的引线框架5与外部主电极51进行引线键合，所以，接合部分与实施方式1、2相比成为高温。但是，能够使引线框架5的尺寸接近功率器件芯片3和续流二极管芯片4的投影面积，所以，能够实现半导体模块的小型化。在与半导体模块的寿命相比优先小型化的情况下，本结构是有用的。
（实施方式4）
在实施方式1中，说明了功率器件芯片3和续流二极管芯片4焊接到引线框架5或金属图案22，但是，也可以代替焊料32、33、34、35而使用纳米银接合层61、62。
纳米银接合是利用加压或加热使直径以纳米为单位的Ag粒子（纳米银粒子）烧结并进行接合的接合方式，通过使用该方法，能够使接合部分以低电阻稳定。此外，由于纳米银粒子的熔点比焊料高，所以，与焊接相比，能够赋予高的耐热性。
因此，在使用纳米银接合层61、62的情况下，也可以为如下结构：从图1所示的实施方式1的半导体模块的结构中除去堤部6和环氧树脂7，利用硅酮凝胶9全部密封外围壳体8的内部。在图4中示出该结构的半导体模块。
根据图4的结构，能够省略堤部的形成工序和环氧树脂的填充工序，所以，能够简化制造工序。
此外，在图2示出的实施方式2或图3示出的实施方式3的半导体模块的结构中，即使是在功率器件芯片3或续流二极管芯片4的两面的接合中使用纳米银接合并省略了堤部6和环氧树脂7的结构，也起到相同的效果。
<效果>
在实施方式4的半导体模块中，代替焊接而利用纳米银接合层61、62将功率器件芯片3与金属图案22和引线框架5接合，所以，与焊接相比，能够应对高的芯片的工作温度。
实施方式4的半导体模块不具有作为灌注的密封树脂的环氧树脂7，利用硅酮树脂9进行由环氧树脂7所进行的密封。在功率器件芯片3的与引线框架5或金属图案22的接合中使用纳米银接合的情况下，与焊接相比，具有针对热循环的可靠性，所以，能够省略环氧树脂7。由此，能够省略堤部的形成工序和环氧树脂的填充工序，所以，能够简化制造工序。
附图标记的说明：
1 基底板
2 绝缘板
3 功率器件芯片
4 续流二极管芯片
5 引线框架
6 堤部
7 环氧树脂
8 外围壳体
9 硅酮凝胶
10 绝缘垫片
21、22、23 金属图案
31、32、33、34、35、36 焊料
41、42 铝线
51 外部主电极
52 外部信号电极。

Claims (7)

1.一种半导体模块，其中，具备：
绝缘板；
多个金属图案，在所述绝缘板上彼此离开地形成；
功率器件芯片，焊接在一个所述金属图案上；
引线框架，焊接在未焊接有所述功率器件芯片的所述金属图案上和所述功率器件芯片上；
外部主电极，设置于外围壳体，在未接合有所述功率器件芯片的所述金属图案上利用引线键合与所述引线框架接合；以及
密封树脂，利用灌注形成，密封所述功率器件芯片、所述引线框架、所述金属图案。
2.一种半导体模块，其中，具备：
绝缘板；
金属图案，形成在所述绝缘板上；
功率器件芯片和绝缘垫片，单独焊接在所述金属图案上；
引线框架，焊接在所述功率器件芯片上和所述绝缘垫片上；
外部主电极，设置于外围壳体，在所述绝缘垫片上利用引线键合与所述引线框架接合；以及
密封树脂，利用灌注形成，密封所述功率器件芯片、所述绝缘垫片、所述引线框架、所述金属图案。
3.一种半导体模块，其中，具备：
绝缘板；
金属图案，形成在所述绝缘板上；
功率器件芯片和续流二极管芯片，单独焊接在所述金属图案上；
引线框架，焊接在所述功率器件芯片上和所述续流二极管芯片上；
外部主电极，设置于外围壳体，在所述续流二极管芯片上利用引线键合与所述引线框架接合；以及
密封树脂，利用灌注形成，密封所述功率器件芯片、所述续流二极管芯片、所述引线框架、所述金属图案。
4.根据权利要求1～3的任意一项所述的半导体模块，其中，
所述密封树脂是使液状环氧树脂硬化后的树脂。
5.根据权利要求1～3的任意一项所述的半导体模块，其中，
代替焊接而利用纳米银接合将所述功率器件芯片与所述金属图案以及所述引线框架接合。
6.根据权利要求1～3的任意一项所述的半导体模块，其中，
在所述外围壳体的内部还具备对所述灌注的密封树脂以外的部分进行密封的硅酮树脂。
7.根据权利要求6所述的半导体模块，其特征在于，
不具有所述灌注的密封树脂，利用所述硅酮树脂进行由该密封树脂所进行的密封。
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