CN107240581A - 电力转换装置及电力转换装置的制造方法 - Google Patents
电力转换装置及电力转换装置的制造方法 Download PDFInfo
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- CN107240581A CN107240581A CN201710117173.5A CN201710117173A CN107240581A CN 107240581 A CN107240581 A CN 107240581A CN 201710117173 A CN201710117173 A CN 201710117173A CN 107240581 A CN107240581 A CN 107240581A
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- connecting portion
- portion part
- semiconductor element
- lead frame
- power inverter
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 230000010354 integration Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 30
- 238000003466 welding Methods 0.000 abstract description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000004913 activation Effects 0.000 description 6
- 238000000280 densification Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
电力转换装置及电力转换装置的制造方法,可实现功率模块内的电连接而不会损坏半导体元件。在导电层(26)和汇流条(23)上载置有第二导线框架(35)。并且,在第二导线框架(35)的两端设置有孔,将焊接材料(36、37)插入到这些孔中。接着,通过超声波振动工具使焊接材料(36、37)振动。焊接材料(36、37)在不成为高温的情况下熔融。这样,第二导线框架(35)连接完毕。利用第一导线框架(31)和第二导线框架(35)将半导体元件(22)和汇流条(23)连接起来。由于利用超声波来接合不与半导体元件(22)直接接触的第二导线框架(35),因此,半导体元件(22)不会受到损坏。
Description
技术领域
本发明涉及将电池中储存的直流电源转换成交流而提供至马达的电力转换装置及电力转换装置的制造方法。
背景技术
被搭载于混合动力车辆及电动车辆的逆变器装置在内部具备作为电力转换器的功率模块,该功率模块进行直流-交流间的电力转换。在该功率模块中,作为开关元件的IGBT(绝缘栅双极晶体管)及二极管等半导体元件通过作为配线的键合线或键合带等而与汇流条电连接。已知各种此时使用的电连接结构(例如,参照专利文献1(图1、图3))。
如专利文献1的图1所示,键合带(70)被架设于IGBT(10)(带括弧数字表示专利文献1中记载的标号。下面同样)、二极管(20)和汇流条(40),一端部(70a)通过超声波与汇流条(40)接合,中间部(70b)通过超声波与二极管(20)接合,另一端部(70c)通过超声波与IGBT(10)接合(专利文献1[0013]段末尾)。
如专利文献1的图3所示,通过将进行超声波振动的工具(80)压靠于键合带(70),从而进行超声波接合。
在专利文献1中,由于将键合带(70)与IGBT(10)及二极管(20)直接键合,因此,有可能由于工具(80)的振动或加压而使IGBT(10)或二极管(20)损伤或破坏。
在要求提高生产成品率时,必须避免使半导体元件(IGBT(10)或二极管(20))受到损坏。
因此,要求能够实现功率模块内的电连接而不会使半导体元件受到损坏的电力转换装置及电力转换装置的制造方法。
现有技术文献
专利文献
专利文献1:日本特开2012-151198号公报
发明内容
本发明的课题在于,提供能够实现功率模块内的电连接而不会使半导体元件受到损坏的电力转换装置及电力转换装置的制造方法。
本发明第一方面的电力转换装置具备:绝缘基板,在绝缘板的至少一面上附着有导电层;半导体元件,其被安装于所述绝缘基板;汇流条,其被设置在从所述半导体元件离开规定长度的部位;和导电部件,其将所述汇流条和所述半导体元件电连接,所述电力转换装置的特征在于,所述导电部件由第一连接部件和第二连接部件这两个部件构成,所述第一连接部件将所述半导体元件和所述导电层连结起来,所述第二连接部件将所述导电层和所述汇流条连结起来。
本发明第二方面的电力转换装置具备:绝缘基板,在绝缘板的至少一面上附着有导电层;半导体元件,其被安装于所述绝缘基板;汇流条,其被设置在从所述半导体元件离开规定长度的部位;和导电部件,其将所述汇流条和所述半导体元件电连接,所述电力转换装置的特征在于,所述导电部件由第一连接部件和第二连接部件构成,所述第一连接部件从所述半导体元件延伸,所述第二连接部件从所述汇流条延伸而与所述第一连接部件直接接合。
根据本发明的第三方面,其特征在于,半导体元件是将二极管和绝缘栅双极晶体管一体化而成的元件。
根据本发明的第四方面,其特征在于,所述第一连接部件是引线框架。
根据本发明的第五方面,其特征在于,所述第二连接部件是带状线。
根据本发明的第六方面,其特征在于,所述第二连接部件是引线框架。
本发明第七方面的电力转换装置的制造方法用于制造第一方面至第三方面中的任一方面所述的电力转换装置,其特征在于,所述第一连接部件是引线框架,通过回流焊接合法将该引线框架的一端与所述半导体元件连接,将另一端与所述导电层或所述第二连接部件连接。
本发明第八方面的电力转换装置的制造方法用于制造第一方面至第四方面中的任一方面所述的电力转换装置,其特征在于,所述第二连接部件是带状线,通过带键合法将该带状线的一端与所述导电层或所述第一连接部件连接,将另一端与所述汇流条连接。
本发明第九方面的电力转换装置的制造方法用于制造第一方面至第四方面中的任一方面所述的电力转换装置,其特征在于,所述第二连接部件是引线框架,通过超声波焊接法将该引线框架的一端与所述导电层或所述第一连接部件连接,将另一端与所述汇流条连接。
发明效果
根据本发明的第一方面,利用第一连接部件和第二连接部件这两个部件构成导电部件,所述第一连接部件将半导体元件和绝缘基板上的导电层连结起来,所述第二连接部件将导电层和汇流条连结起来。由于导电部件为两个部件,因此,在导电层上分别连接有两个部件,因此,即使在通过超声波接合第二连接部件的情况下,也不会对作为另一部件的第一连接部件施加振动等影响。此外,可通过不使半导体元件受到损坏的接合法接合第一连接部件。
其结果是,根据本发明,可提供能够实现功率模块内的电连接而不会使半导体元件受到损坏的电力转换装置。
根据本发明的第二方面,利用第一连接部件和第二连接部件这两个部件构成导电部件,所述第一连接部件从半导体元件延伸,所述第二连接部件从汇流条延伸而与第一连接部件直接接合。由于导电部件为两个部件,因此,即使在通过超声波接合第二连接部件的情况下,也不会与作为另一部件的第一连接部件直接连接,从而第一连接部件吸收振动等,不会使半导体元件受到损坏。此外,可通过不使半导体元件受到损坏的接合法接合第一连接部件。
其结果是,根据本发明,可提供能够实现功率模块内的电连接而不会使半导体元件受到损坏的电力转换装置。
根据本发明的第三方面,半导体元件是将二极管和绝缘栅双极晶体管一体化而成的元件。由于一体化,因此,能够实现电力转换装置的紧凑化。
根据本发明的第四方面,第一连接部件是引线框架。由于在引线框架的一端与半导体元件之间放置焊接材料,在引线框架的另一端与导电层之间放置焊接材料,将引线框架、半导体元件、导电层等放置在焊接材料的熔点以上的氛围气中,从而能够连接引线框架。
根据本发明的第五方面,第二连接部件是带状线。可利用带状线以带键合法将导电层和汇流条连接起来。
根据本发明的第六方面,第二连接部件是引线框架。可利用超声波焊接法将引线框架与导电层和汇流条连结起来。
根据本发明的第七方面,第一连接部件是引线框架,通过回流焊接合法将该引线框架的一端与半导体元件连接,将另一端与导电层或第二连接部件连接。
回流焊接合法是如下的制造方法:将焊接材料放置在绝缘基板与半导体元件之间,将该焊接材料逐渐加热到焊接材料的熔融温度,接着通过进行冷却来完成连接。采用在半导体元件允许的温度下熔融的那样的焊接材料。由于无需振动或加压,因此,不会使半导体元件受到损坏。
此外,在带状线的情况下需要连接多根,但在本发明的引线框架的情况下一根即可,因此,可实现部件数量的削减和工时的削减。并且,与带状线相比,能够提高连接强度。此外,可通过引线框架将半导体元件发出的热传递到绝缘基板,可提高散热性。
根据本发明的第八方面,第二连接部件是带状线,该带状线通过带键合法连接。
由于第二连接部件远离半导体元件,因此,能够大致自由地选择连接法。由于带状线富于挠性,因此,即使在有连接高度的情况下也可灵活地应对。
根据本发明的第九方面,第二连接部件是引线框架,该引线框架通过超声波焊接法连接。
由于第二连接部件远离半导体元件,因此,能够大致自由地选择连接法。
超声波焊接法通过超声波振动使焊接材料熔融而不进行加热。由于无需高温加热,因此,支承汇流条的部件(功率模块壳等)可使用廉价的树脂材料。
此外,超声波焊接法不需要焊剂。由于不使用焊剂,因此,不需要清洗焊剂残渣,可减少工序及工时。
附图说明
图1是本发明的电力转换装置的分解立体图。
图2是功率模块壳的要部的放大图。
图3是说明本发明的制造方法的图。
图4是说明另外的制造方法的图。
标号说明
1 电力转换装置
17 功率模块壳
18 电路基板
21 绝缘基板
22 半导体元件
23 汇流条
24 陶瓷板
25 导电部件
26 铜层(导电层)
27 第一连接部件(引线框架)
28 第二连接部件(带状线、引线框架)
31 第一引线框架
32、36、37 焊接材料
34 带状线
35 第二引线框架
具体实施方式
下面,根据附图对本发明的实施方式进行说明。
[实施例]
本发明的电力转换装置10配置在电池与马达之间。由于电池和马达是公知的,因此,省略图示。在使用马达作为发电机的情况下,将所发出的电力储存在电池中。因此,本发明的电力转换装置10能够配置在电池与马达之间或发电机与电池之间。
如图1的(a)所示,电力转换装置10例如具备:电容器14,其被内置在壳体中,所述壳体由下部壳11、中间壳12和上部罩13构成;马达侧汇流条15,其与马达连接;和功率模块壳17,其内置功率模块。
如图1的(b)所示,功率模块壳17的上表面具备控制功率模块的电路基板18,下表面具备对功率模块进行冷却的冷却器19,内部具备半导体元件22等。另外,半导体元件22等也可以安装在绝缘基板(图2、标号21)上,并将该绝缘基板与冷却器19的上表面接触或接合。在该情况下,半导体元件22等被功率模块壳17围绕。
图2的(a)是图1的(b)的要部放大图(2a),图2的(b)是图2的(a)的b-b线剖视图。
如图2的(b)所示,半导体元件22被安装于绝缘基板21。
绝缘基板21优选的是将铜层26直接接合在陶瓷板24上得到的DCB(Direct CopperBond:直接键合铜)基板,但也可以是通用的铜箔基板。
在图2的(b)中,半导体元件22的安装侧的铜层26被分割,铜层26是导电层。下面,将铜层26称为导电层26。
半导体元件22除了二极管、IGBT(绝缘栅双极晶体管)等元件以外,优选的是将二极管与绝缘栅双极晶体管一体化得到的一体化元件。若是一体化元件,则可实现电力转换装置10的紧凑化。
此外,在功率模块壳17中埋设有壳侧的汇流条23。并且,将半导体元件22与汇流条23电连接的导电部件25由第一连接部件27和第二连接部件28构成,所述第一连接部件27将半导体元件22和绝缘基板21上的导电层26连结起来,所述第二连接部件28将导电层26和汇流条23连接起来。平面的布局如图2的(a)所示。沿用图2的(b)的标号,省略详细的说明。
下面,对以连接方法为主的制造方法进行说明。
在图3的(a)中,实施回流焊接合法。即,将作为第一连接部件27的第一引线框架31载置在半导体元件22和导电层26上。此时,将焊接材料32放置在第一引线框架31的一端与半导体元件22之间,将焊接材料32放置在第一引线框架31的另一端与导电层26之间。接着,将第一引线框架31、半导体元件22、导电层26等放置在焊接材料32的熔点以上的氛围气中。焊接材料32熔融后进行冷却。这样,第一引线框架31被连接起来。
第一连接部件27也可以是带状线(ribbon wire),但在是带状线的情况下需要连接多根。关于这点,在第一引线框架31的情况下一根即可,因此可实现部件数量的削减和工时的削减。并且,与带状线相比,能够提高连接强度。此外,能够通过第一引线框架31和导电层26将半导体元件22发出的热传递到冷却器19,能够提高散热性。
接着,如图3的(b)所示,安装具有汇流条23的功率模块壳17。第二连接部件28可采用带状线34和第二引线框架35中的任一个。
在第二连接部件28使用带状线34的情况下,如图3的(c)所示,利用带状线34将导电层26和汇流条23连接起来。此时的连接法是带键合(ribbon bonding)法。即,利用进行超声波振动的工具将带状线34的一端连接于导电层26。接着,借助于工具使带状线34弯曲成S字状。接着,利用进行超声波振动的工具将带状线34的另一端与汇流条23连接。另外,也可以顺次地进行汇流条23的连接、弯曲、导电层26的连接。
根据带键合法,对连接部位作用振动和按压。但是,由于带状线34未与半导体元件22直接连接,因此,振动和按压不会影响半导体元件22。其结果是,能够避免半导体元件22的损伤等。
此外,根据带键合法,即使导电层26与汇流条23存在高低差也没有问题。
并且,也可以将带状线34直接连接至第一引线框架31的导电层26的连接部上。在该结构的情况下,由于第一引线框架31与带状线34在重叠的状态下连接,因此,能够减少导电层26上的连接面积,可实现电力转换装置的紧凑化。
在第二连接部件28使用第二引线框架35的情况下,如图3的(d)所示,将第二引线框架35载置于导电层26和汇流条23。进而,在第二引线框架35的两端设置孔,将焊接材料36、37插入到这些孔中。
接着,如图3的(e)所示,将第二引线框架35连接于导电层26和汇流条23。此时的连接法优选的是超声波焊接法。即,利用超声波振动工具使焊接材料36振动。焊接材料36在不成为高温的情况下熔融。这样,第二引线框架35连接完毕。另外,也可以顺次地进行汇流条23的连接、导电层26的连接。
并且,也可以将第二引线框架35直接连接至第一引线框架31的导电层26的连接部上。在该结构的情况下,由于第一引线框架31与第二引线框架35在重叠的状态下连接,因此,能够减少导电层26上的连接面积,可实现电力转换装置的紧凑化。
下面,对变更例进行说明。
在图4的(a)中,实施回流焊接合法。即,将作为第一连接部件27的第一引线框架31载置于半导体元件22。此时,将焊接材料32放置在第一引线框架31的一端与半导体元件22之间。接着,将第一引线框架31及半导体元件22等放置在焊接材料32的熔点以上的氛围气中。焊接材料32熔融后进行冷却。这样,第一引线框架31被连接。
接着,如图4的(b)所示,安装具有汇流条23的功率模块17。第二连接部件28可采用带状线34和第二引线框架35中的任一个。
在第二连接部件28使用带状线34的情况下,如图4的(c)所示,利用带状线34将第一引线框架31和汇流条23连接起来。此时的连接法是带键合法。即,利用进行超声波振动的工具将带状线34的一端连接于第一引线框架31。接着,借助于工具使带状线34弯曲成S字状。接着,利用进行超声波振动的工具将带状线34的另一端与汇流条23连接。另外,也可以顺次地进行汇流条23的连接、弯曲、导电层26的连接。
在第二连接部件28使用第二引线框架35的情况下,如图4的(d)所示,将第二引线框架35载置于第一引线框架31和汇流条23。进而,在第二引线框架35的两端设置孔,将焊接材料36、37插入到这些孔中。
接着,如图4的(e)所示,将第二引线框架35连接于第一引线框架31和汇流条23。此时的连接法优选的是超声波焊接法。即,利用超声波振动工具使焊接材料36振动。焊接材料36在不成为高温的情况下熔融。接着,利用超声波振动工具使焊接材料37振动。焊接材料37在不成为高温的情况下熔融。这样,第二引线框架35连接完毕。另外,也可以顺次地进行汇流条23的连接、导电层26的连接。
另外,在图4的(c)、图4的(e)中,超声波振动经由第一引线框架31而传递到半导体元件22。但是,由于第一引线框架31是薄的带状板而发挥衰减功能,因此,对半导体元件22的影响轻微。此外,由于焊接材料32被设置在第一引线框架31与半导体元件22之间,因此,还发挥借助于焊接材料32的衰减功能。
这样,根据本发明,半导体元件22与汇流条23通过第一引线框架31和第二引线框架35连接。由于通过超声波等来接合不与半导体元件22直接接触的第二引线框架35,因此,半导体元件22不会受到损坏。
另外,第一、第二引线框架31、35的形状是任意的。
此外,电力转换装置10除了被搭载于电动车辆、所谓的混合动力车辆以外,还可以用于船舶或一般产业。
产业上的可利用性
本发明适合于被搭载于车辆的电力转换装置。
Claims (9)
1.一种电力转换装置,该电力转换装置具备:
绝缘基板,在绝缘板的至少一面上附着有导电层;
半导体元件,其被安装于所述绝缘基板;
汇流条,其被设置在从所述半导体元件离开规定长度的部位;和
导电部件,其将所述汇流条和所述半导体元件电连接,
所述电力转换装置的特征在于,
所述导电部件由第一连接部件和第二连接部件这两个部件构成,所述第一连接部件将所述半导体元件和所述导电层连结起来,所述第二连接部件将所述导电层和所述汇流条连结起来。
2.一种电力转换装置,该电力转换装置具备:
绝缘基板,在绝缘板的至少一面上附着有导电层;
半导体元件,其被安装于所述绝缘基板;
汇流条,其被设置在从所述半导体元件离开规定长度的部位;和
导电部件,其将所述汇流条和所述半导体元件电连接,
所述电力转换装置的特征在于,
所述导电部件由第一连接部件和第二连接部件构成,所述第一连接部件从所述半导体元件延伸,所述第二连接部件从所述汇流条延伸而与所述第一连接部件直接接合。
3.根据权利要求1或2所述的电力转换装置,其特征在于,
所述半导体元件是将二极管和绝缘栅双极晶体管一体化而成的元件。
4.根据权利要求1至3中的任一项所述的电力转换装置,其特征在于,
所述第一连接部件是引线框架。
5.根据权利要求1至3中的任一项所述的电力转换装置,其特征在于,
所述第二连接部件是带状线。
6.根据权利要求1至3中的任一项所述的电力转换装置,其特征在于,
所述第二连接部件是引线框架。
7.一种电力转换装置的制造方法,用于制造权利要求1至3中的任一项所述的电力转换装置,其特征在于,
所述第一连接部件是引线框架,
通过回流焊接合法将该引线框架的一端与所述半导体元件连接,将另一端与所述导电层或所述第二连接部件连接。
8.一种电力转换装置的制造方法,用于制造权利要求1至4中的任一项所述的电力转换装置,其特征在于,
所述第二连接部件是带状线,
通过带键合法将该带状线的一端与所述导电层或所述第一连接部件连接,将另一端与所述汇流条连接。
9.一种电力转换装置的制造方法,用于制造权利要求1至4中的任一项所述的电力转换装置,其特征在于,
所述第二连接部件是引线框架,
通过超声波焊接法将该引线框架的一端与所述导电层或所述第一连接部件连接,将另一端与所述汇流条连接。
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