CN107240581A - The manufacture method of power inverter and power inverter - Google Patents

The manufacture method of power inverter and power inverter Download PDF

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Publication number
CN107240581A
CN107240581A CN201710117173.5A CN201710117173A CN107240581A CN 107240581 A CN107240581 A CN 107240581A CN 201710117173 A CN201710117173 A CN 201710117173A CN 107240581 A CN107240581 A CN 107240581A
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CN
China
Prior art keywords
connecting portion
portion part
semiconductor element
lead frame
power inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710117173.5A
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Chinese (zh)
Inventor
石井隆
斋藤慎哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Keihin Corp
Keihin Dock Co Ltd
Original Assignee
Keihin Dock Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016240317A external-priority patent/JP2017183699A/en
Application filed by Keihin Dock Co Ltd filed Critical Keihin Dock Co Ltd
Publication of CN107240581A publication Critical patent/CN107240581A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Inverter Devices (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

The manufacture method of power inverter and power inverter, can be achieved the electrical connection in power model without damaging semiconductor element.The second lead frame (35) is placed with conductive layer (26) and busbar (23).Also, hole is provided at both ends with the second lead frame (35), welding material (36,37) is inserted into this some holes.Then, vibrate welding material (36,37) by ultrasonic vibration tool.Welding material (36,37) is melted in the case where not turning into high temperature.So, the second lead frame (35) connection is finished.Semiconductor element (22) and busbar (23) are connected using the first lead frame (31) and the second lead frame (35).Due to engaging the second lead frame (35) not contacted directly with semiconductor element (22) using ultrasonic wave, therefore, semiconductor element (22) will not be damaged.

Description

The manufacture method of power inverter and power inverter
Technical field
There is provided the present invention relates to the dc source stored in battery to be converted into exchanging to the power inverter of motor And the manufacture method of power inverter.
Background technology
The DC-to-AC converter for being equipped on motor vehicle driven by mixed power and electric vehicle internally possesses as electric power converter Power model, the power model carries out the electrical power conversion between DC-AC.In the power model, switch element is used as The semiconductor element such as IGBT (igbt) and diode by bonding line or bonding tape as distribution etc. with Busbar is electrically connected.The known various electric connection structures now used (for example, referring to patent document 1 (Fig. 1, Fig. 3)).
As shown in Fig. 1 of patent document 1, bonding tape (70) is set up in IGBT (10), and (band parantheses numeral represents patent text Offer the label described in 1.It is same below), diode (20) and busbar (40), one end (70a) is by ultrasonic wave with confluxing Bar (40) is engaged, and pars intermedia (70b) engaged by ultrasonic wave with diode (20), the other end (70c) by ultrasonic wave and IGBT (10) engages (patent document 1 [0013] section end).
As shown in Fig. 3 of patent document 1, by the way that the instrument (80) for carrying out ultrasonic activation is pressed against into bonding tape (70), It is ultrasonic bonding so as to carry out.
In patent document 1, due to by bonding tape (70) and IGBT (10) and diode (20) Direct Bonding, therefore, having IGBT (10) or diode (20) may be made to damage or destroy due to the vibration or pressurization of instrument (80).
When requiring to improve production yield rate, it is necessary to avoid making semiconductor element (IGBT (10) or diode (20)) by Damage.
It is therefore desirable to which electrical connection in power model can be realized without turning the electric power that semiconductor element is damaged The manufacture method of changing device and power inverter.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2012-151198 publications
The content of the invention
The present invention problem be there is provided the electrical connection that can be realized in power model without make semiconductor element by The power inverter of damage and the manufacture method of power inverter.
The power inverter of first aspect present invention possesses：Insulated substrate, is attached with least one side of insulation board Conductive layer；Semiconductor element, it is installed in the insulated substrate；Busbar, its be arranged on from the semiconductor element from Open the position of specific length；And conductive component, it electrically connects the busbar and the semiconductor element, the electrical power conversion Device is characterised by that the conductive component is made up of the first connecting portion part and second connecting portion part both parts, described One connection member links up the semiconductor element and the conductive layer, the second connecting portion part by the conductive layer and The busbar is linked up.
The power inverter of second aspect of the present invention possesses：Insulated substrate, is attached with least one side of insulation board Conductive layer；Semiconductor element, it is installed in the insulated substrate；Busbar, its be arranged on from the semiconductor element from Open the position of specific length；And conductive component, it electrically connects the busbar and the semiconductor element, the electrical power conversion Device is characterised by that the conductive component is made up of the first connecting portion part and second connecting portion part, the first connecting portion part From semiconductor element extension, the second connecting portion part extends and direct with the first connecting portion part from the busbar Engagement.
According to the third aspect of the invention we, it is characterised in that semiconductor element is by diode and insulated gate bipolar transistor Pipe integrated element.
According to the fourth aspect of the invention, it is characterised in that the first connecting portion part is lead frame.
According to the fifth aspect of the invention, it is characterised in that the second connecting portion part is strip line.
According to the sixth aspect of the invention, it is characterised in that the second connecting portion part is lead frame.
The manufacture method of the power inverter of seventh aspect present invention is used to manufacture first aspect into the third aspect Power inverter described in either side, it is characterised in that the first connecting portion part is lead frame, passes through reflow soldering Legal one end by the lead frame is connected with the semiconductor element, and the other end is connected with the conductive layer or described second Part is connected.
The manufacture method of the power inverter of eighth aspect present invention is used to manufacture first aspect into fourth aspect Power inverter described in either side, it is characterised in that the second connecting portion part is strip line, will by band bonding method One end of the strip line is connected with the conductive layer or the first connecting portion part, and the other end is connected with the busbar.
The manufacture method of the power inverter of ninth aspect present invention is used to manufacture first aspect into fourth aspect Power inverter described in either side, it is characterised in that the second connecting portion part is lead frame, passes through supersonic welding One end of the lead frame is connected by connection with the conductive layer or the first connecting portion part, by the other end and the busbar Connection.
Invention effect
According to the first aspect of the invention, constituted using the first connecting portion part and second connecting portion part both parts conductive Part, the first connecting portion part links up the conductive layer on semiconductor element and insulated substrate, the second connecting portion Part links up conductive layer and busbar.Because conductive component is two parts, therefore, two are connected on the electrically conductive Individual part, therefore, also will not be to being used as the of another part in the case of by ultrasonic bonding second connecting portion part One connection member applies the influence such as vibration.In addition, can be connected by the bonding method engagement first for not making semiconductor element be damaged Relay part.
As a result, according to the present invention, it is possible to provide the electrical connection in power model can be realized without making semiconductor element The power inverter that part is damaged.
According to the second aspect of the invention, constituted using the first connecting portion part and second connecting portion part both parts conductive Part, the first connecting portion part extends from semiconductor element, and the second connecting portion part extends from busbar and connected with first Relay part is directly engaged.Because conductive component is two parts, therefore, even in passing through ultrasonic bonding second connecting portion part In the case of, it will not be also directly connected to the first connecting portion part as another part, so that the first connecting portion part absorbs vibration etc., Semiconductor element will not be made to be damaged.In addition, can be connected by the bonding method engagement first for not making semiconductor element be damaged Relay part.
As a result, according to the present invention, it is possible to provide the electrical connection in power model can be realized without making semiconductor element The power inverter that part is damaged.
According to the third aspect of the invention we, semiconductor element is to form diode and igbt integration Element.Due to integration, therefore, it is possible to realize the densification of power inverter.
According to the fourth aspect of the invention, the first connecting portion part is lead frame.Due in one end of lead frame and half Welding material is placed between conductor element, welding material is placed between the other end and conductive layer of lead frame, by lead frame Frame, semiconductor element, conductive layer etc. are placed in atmosphere the gas more than fusing point of welding material, so as to connecting lead wire frame Frame.
According to the fifth aspect of the invention, second connecting portion part is strip line.It will be led with band bonding method using strip line Electric layer and busbar are connected.
According to the sixth aspect of the invention, second connecting portion part is lead frame.Using ultrasonic bonding by lead Framework is linked up with conductive layer and busbar.
According to the seventh aspect of the invention, the first connecting portion part is lead frame, legal by the lead by reflow soldering One end of framework is connected with semiconductor element, and the other end is connected with conductive layer or second connecting portion part.
Legal reflow soldering is following manufacture method：By welding material be placed on insulated substrate and semiconductor element it Between, the welding material is progressively heated to the melting temperature of welding material, connection is then completed by being cooled down.Using Welding material at a temperature of semiconductor element allows as melting.Due to that without vibration or pressurization, therefore, will not make partly to lead Volume elements part is damaged.
In addition, need in case of a strip line connection many, but the present invention lead frame in the case of one i.e. Can, therefore, the reduction of number of components and the reduction in man-hour can be achieved.Also, compared with strip line, it is possible to increase bonding strength. In addition, the heat transfer that can be sent semiconductor element by lead frame can improve thermal diffusivity to insulated substrate.
According to the eighth aspect of the invention, second connecting portion part is strip line, and the strip line is connected by band bonding method.
Because second connecting portion part is away from semiconductor element, therefore, it is possible to substantially freely discretionary wiring method.Due to banding Line is imbued with flexibility, therefore, also can neatly be tackled in the case of having connection height.
According to the ninth aspect of the invention, second connecting portion part is lead frame, and the lead frame passes through ultrasonic bonding Method is connected.
Because second connecting portion part is away from semiconductor element, therefore, it is possible to substantially freely discretionary wiring method.
Ultrasonic bonding by ultrasonic activation make welding material melt and without heating.Due to adding without high temperature Cheap resin material can be used in heat, therefore, the part (power model shell etc.) of supporting busbar.
In addition, ultrasonic bonding does not need solder flux., can due to without using solder flux, therefore, there is no need to clean flux residue Reduce process and man-hour.
Brief description of the drawings
Fig. 1 is the exploded perspective view of the power inverter of the present invention.
Fig. 2 is the enlarged drawing for wanting portion of power model shell.
Fig. 3 is the figure for illustrating the manufacture method of the present invention.
Fig. 4 is the figure for illustrating other manufacture method.
Label declaration
1 power inverter
17 power model shells
18 circuit substrates
21 insulated substrates
22 semiconductor elements
23 busbars
24 ceramic wafers
25 conductive components
26 layers of copper (conductive layer)
27 the first connecting portion parts (lead frame)
28 second connecting portion parts (strip line, lead frame)
31 first lead frames
32nd, 36,37 welding material
34 strip lines
35 second lead frames
Embodiment
Below, embodiments of the present invention are illustrated with reference to the accompanying drawings.
[embodiment]
The power inverter 10 of the present invention is configured between battery and motor.Due to battery and motor be it is known, because This, omits diagram.In the case where using motor as generator, by the electric power sent storage in the battery.Therefore, this hair Bright power inverter 10 can be configured between battery and motor or between generator and battery.
As shown in Fig. 1 (a), power inverter 10 for example possesses：Capacitor 14, it is built in the housing, described Housing is made up of lower case 11, middle case 12 and upper lid 13；Motor-side busbar 15, it is connected with motor；And power model Shell 17, its built-in power module.
As shown in Fig. 1 (b), the upper surface of power model shell 17 possesses the circuit substrate 18 of control power model, following table Face possesses the cooler 19 cooled down to power model, and inside possesses semiconductor element 22 etc..In addition, semiconductor element 22 etc. It can also be arranged on insulated substrate (Fig. 2, label 21), and by the upper surface of the insulated substrate and cooler 19 or connect Close.In this case, the grade of semiconductor element 22 is surrounded by power model shell 17.
Fig. 2 (a) is Fig. 1 (b) enlarged view (2a), and Fig. 2 (b) is Fig. 2 (a) b-b line sectional views.
As shown in Fig. 2 (b), semiconductor element 22 is installed in insulated substrate 21.
Insulated substrate 21 is preferably DCB (the Direct Copper for being directly bonded to layers of copper 26 and being obtained on ceramic wafer 24 Bond：Direct Bonding copper) substrate is but it is also possible to be general copper clad laminate.
In Fig. 2 (b), the layers of copper 26 of the installation side of semiconductor element 22 is divided, and layers of copper 26 is conductive layer.Below, Layers of copper 26 is referred to as conductive layer 26.
Semiconductor element 22 is in addition to the elements such as diode, IGBT (igbt), preferably by two Pole pipe obtained integrated element integrated with igbt.If integrated element, then electrical power conversion can be achieved The densification of device 10.
In addition, being embedded with the busbar 23 of shell-side in power model shell 17.Also, by semiconductor element 22 and busbar The conductive component 25 of 23 electrical connections is made up of the first connecting portion part 27 and second connecting portion part 28, and the first connecting portion part 27 will Conductive layer 26 on semiconductor element 22 and insulated substrate 21 is linked up, and the second connecting portion part 28 is by conductive layer 26 and converges Stream bar 23 is connected.The layout of plane is as shown in Fig. 2 (a).The label of Fig. 2 (b) is continued to use, detailed description is omitted.
Below, the manufacture method based on connection method is illustrated.
In Fig. 3 (a), implement reflow soldering legal.That is, the first lead frame 31 of the first connecting portion part 27 will be used as It is positioned on semiconductor element 22 and conductive layer 26.Now, by welding material 32 be placed on one end of the first lead frame 31 with Between semiconductor element 22, welding material 32 is placed between the other end of the first lead frame 31 and conductive layer 26.Then, First lead frame 31, semiconductor element 22, conductive layer 26 etc. are placed in atmosphere the gas more than fusing point of welding material 32. Welding material 32 is cooled down after melting.So, the first lead frame 31 is connected.
The first connecting portion part 27 can also be strip line (ribbon wire), but need in the case where being strip line to connect Connect many.On this point, one in the case of the first lead frame 31, therefore reduction and the work of number of components can be realized When reduction.Also, compared with strip line, it is possible to increase bonding strength.Furthermore it is possible to pass through the first lead frame 31 and conduction The heat transfers that send semiconductor element 22 of layer 26 are to cooler 19, it is possible to increase thermal diffusivity.
Then, as shown in Fig. 3 (b), the power model shell 17 with busbar 23 is installed.Second connecting portion part 28 can be adopted With any one in the lead frame 35 of strip line 34 and second.
In the case where second connecting portion part 28 is using strip line 34, such as shown in Fig. 3 (c), it will be led using strip line 34 Electric layer 26 and busbar 23 are connected.Connection method now is band bonding (ribbon bonding) method.That is, using being surpassed One end of strip line 34 is connected to conductive layer 26 by the instrument of acoustic vibration.Then, strip line 34 is made to bend to S by means of instrument Shape.Then, the other end of strip line 34 is connected with busbar 23 using the instrument for carrying out ultrasonic activation.In addition, also may be used Sequentially carry out connection, bending, the connection of conductive layer 26 of busbar 23.
According to band bonding method, connecting portion is acted on and vibrates and presses.But, due to strip line 34 not with semiconductor element 22 are directly connected to, therefore, and vibration and pressing do not interfere with semiconductor element 22.As a result, semiconductor element 22 can be avoided Damage etc..
In addition, according to band bonding method, there is difference of height with busbar 23 even if conductive layer 26 also has no problem.
Also, strip line 34 can also be connected directly on the connecting portion of the conductive layer 26 of the first lead frame 31. In the case of the structure, because the first lead frame 31 is connected in the state of overlapping with strip line 34, led therefore, it is possible to reduce Connection area in electric layer 26, can be achieved the densification of power inverter.
In the case where second connecting portion part 28 is using the second lead frame 35, such as shown in Fig. 3 (d), by the second lead Framework 35 is placed in conductive layer 26 and busbar 23.And then, in the two ends providing holes of the second lead frame 35, by welding material 36th, 37 it is inserted into this some holes.
Then, as shown in Fig. 3 (e), the second lead frame 35 is connected to conductive layer 26 and busbar 23.Company now Connection is preferably ultrasonic bonding.That is, vibrate welding material 36 using ultrasonic vibration tool.Welding material 36 is not Melted in the case of as high temperature.So, the second lead frame 35 connection is finished.Alternatively, it is also possible to sequentially carry out busbar 23 connection, the connection of conductive layer 26.
Also, the second lead frame 35 can also be connected directly to the connecting portion of the conductive layer 26 of the first lead frame 31 On.In the case of such a construction, because the first lead frame 31 is connected in the state of overlapping with the second lead frame 35, because This, can reduce the connection area on conductive layer 26, and the densification of power inverter can be achieved.
Below, modification is illustrated.
In Fig. 4 (a), implement reflow soldering legal.That is, the first lead frame 31 of the first connecting portion part 27 will be used as It is placed in semiconductor element 22.Now, welding material 32 is placed on to one end and the semiconductor element 22 of the first lead frame 31 Between.Then, the first lead frame 31 and semiconductor element 22 etc. are placed on to atmosphere the gas more than fusing point of welding material 32 In.Welding material 32 is cooled down after melting.So, the first lead frame 31 is connected.
Then, as shown in Fig. 4 (b), the power model 17 with busbar 23 is installed.Second connecting portion part 28 can be used Any one in the lead frame 35 of strip line 34 and second.
In second connecting portion part 28 using in the case of strip line 34, such as Fig. 4 (c) shown in, using strip line 34 by the One lead frame 31 and busbar 23 are connected.Connection method now is band bonding method.That is, using carrying out ultrasonic activation One end of strip line 34 is connected to the first lead frame 31 by instrument.Then, strip line 34 is made to bend to S words by means of instrument Shape.Then, the other end of strip line 34 is connected with busbar 23 using the instrument for carrying out ultrasonic activation.Alternatively, it is also possible to Sequentially carry out connection, bending, the connection of conductive layer 26 of busbar 23.
In the case where second connecting portion part 28 is using the second lead frame 35, such as shown in Fig. 4 (d), by the second lead Framework 35 is placed in the first lead frame 31 and busbar 23.And then, in the two ends providing holes of the second lead frame 35, it will weld Material 36,37 is inserted into this some holes.
Then, as shown in Fig. 4 (e), the second lead frame 35 is connected to the first lead frame 31 and busbar 23.This When connection method be preferably ultrasonic bonding.That is, vibrate welding material 36 using ultrasonic vibration tool.Welding material 36 melt in the case where not turning into high temperature.Then, vibrate welding material 37 using ultrasonic vibration tool.Welding material 37 Melted in the case where not turning into high temperature.So, the second lead frame 35 connection is finished.Alternatively, it is also possible to sequentially be converged Flow connection, the connection of conductive layer 26 of bar 23.
In addition, in (c), Fig. 4 (e) in Fig. 4, ultrasonic activation is delivered to semiconductor via the first lead frame 31 Element 22.But, because the first lead frame 31 is thin band-like plate and plays attenuation function, therefore, to semiconductor element 22 Influence it is slight.Further, since welding material 32 is arranged between the first lead frame 31 and semiconductor element 22, therefore, Also play the attenuation function by means of welding material 32.
So, according to the present invention, semiconductor element 22 passes through the first lead frame 31 and the second lead frame with busbar 23 Frame 35 is connected.The second lead frame 35 not contacted directly with semiconductor element 22 due to being engaged by ultrasonic wave etc., therefore, Semiconductor element 22 will not be damaged.
In addition, the shape of first, second lead frame 31,35 is arbitrary.
, can be with addition, power inverter 10 is in addition to being equipped on electric vehicle, so-called motor vehicle driven by mixed power For ship or general industry.
Industrial applicability
The present invention is suitable for being equipped on the power inverter of vehicle.

Claims (9)

1. a kind of power inverter, the power inverter possesses：
Insulated substrate, conductive layer is attached with least one side of insulation board；
Semiconductor element, it is installed in the insulated substrate；
Busbar, it is arranged on the position that specific length is left from the semiconductor element；With
Conductive component, it electrically connects the busbar and the semiconductor element,
The power inverter is characterised by,
The conductive component is made up of the first connecting portion part and second connecting portion part both parts, and the first connecting portion part will The semiconductor element and the conductive layer are linked up, and the second connecting portion part connects the conductive layer and the busbar Knot gets up.
2. a kind of power inverter, the power inverter possesses：
Insulated substrate, conductive layer is attached with least one side of insulation board；
Semiconductor element, it is installed in the insulated substrate；
Busbar, it is arranged on the position that specific length is left from the semiconductor element；With
Conductive component, it electrically connects the busbar and the semiconductor element,
The power inverter is characterised by,
The conductive component is made up of the first connecting portion part and second connecting portion part, and the first connecting portion part is from the semiconductor Element extends, and the second connecting portion part extends from the busbar and directly engaged with the first connecting portion part.
3. power inverter according to claim 1 or 2, it is characterised in that
The semiconductor element is the element by diode and igbt integration.
4. the power inverter according to any one of claims 1 to 3, it is characterised in that
The first connecting portion part is lead frame.
5. the power inverter according to any one of claims 1 to 3, it is characterised in that
The second connecting portion part is strip line.
6. the power inverter according to any one of claims 1 to 3, it is characterised in that
The second connecting portion part is lead frame.
7. a kind of manufacture method of power inverter, for the electrical power conversion described in any one of manufacturing claims 1 to 3 Device, it is characterised in that
The first connecting portion part is lead frame,
It is connected by the legal one end by the lead frame of reflow soldering with the semiconductor element, by the other end and the conduction Layer or second connecting portion part connection.
8. a kind of manufacture method of power inverter, for the electrical power conversion described in any one of manufacturing claims 1 to 4 Device, it is characterised in that
The second connecting portion part is strip line,
By the way that one end of the strip line is connected with the conductive layer or the first connecting portion part with bonding method, by the other end with The busbar connection.
9. a kind of manufacture method of power inverter, for the electrical power conversion described in any one of manufacturing claims 1 to 4 Device, it is characterised in that
The second connecting portion part is lead frame,
One end of the lead frame is connected with the conductive layer or the first connecting portion part by ultrasonic bonding, will be another One end is connected with the busbar.
CN201710117173.5A 2016-03-29 2017-03-01 The manufacture method of power inverter and power inverter Pending CN107240581A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110865499A (en) * 2018-08-28 2020-03-06 三星电机株式会社 Camera module

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019206824A1 (en) * 2019-05-10 2020-11-12 Robert Bosch Gmbh Contact arrangement and power module
US20230262887A1 (en) * 2022-02-15 2023-08-17 Lear Corporation Circuit board assembly system and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253950A (en) * 2010-06-02 2011-12-15 Mitsubishi Electric Corp Power semiconductor device
KR101278393B1 (en) * 2010-11-01 2013-06-24 삼성전기주식회사 Power package module and a fabricating mothod the same
JP2012151198A (en) 2011-01-18 2012-08-09 Toyota Motor Corp Structure for jointing bus bar and wiring
JP2013016629A (en) * 2011-07-04 2013-01-24 Mitsubishi Electric Corp Semiconductor module
JP5656907B2 (en) * 2012-04-11 2015-01-21 三菱電機株式会社 Power module
JP6133093B2 (en) * 2013-03-25 2017-05-24 本田技研工業株式会社 Power converter
JP6176320B2 (en) * 2013-04-25 2017-08-09 富士電機株式会社 Semiconductor device
JP6354415B2 (en) * 2013-08-14 2018-07-11 富士電機株式会社 Laser welding machine and laser welding method using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110865499A (en) * 2018-08-28 2020-03-06 三星电机株式会社 Camera module

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