CN101582414A - 功率端子直接键合的功率模块 - Google Patents

功率端子直接键合的功率模块 Download PDF

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CN101582414A
CN101582414A CNA2009100974154A CN200910097415A CN101582414A CN 101582414 A CN101582414 A CN 101582414A CN A2009100974154 A CNA2009100974154 A CN A2009100974154A CN 200910097415 A CN200910097415 A CN 200910097415A CN 101582414 A CN101582414 A CN 101582414A
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power terminal
chip
power
module
insulated substrate
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CN101582414B (zh
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姚礼军
刘志宏
金晓行
胡少华
张宏波
雷鸣
余传武
沈华
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Star Semiconductor Co ltd
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JIAXING STARPOWER MICROELECTRONICS CO Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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Abstract

本发明公开了一种功率端子直接键合的功率模块，包括芯片、绝缘基板、散热板、功率端子和外壳，功率端子直接固定在外壳上。本发明功率端子的固定方式可以优化端子的设计形状，减小寄生电感，提高应用这种功率端子模块的可靠性和使用寿命。

Description

功率端子直接键合的功率模块
技术领域
本发明属于电力电子学领域，涉及功率模块的封装，具体地说是一种功率端子直接键合的功率模块。
背景技术
功率模块包括绝缘栅双极型晶体管(IGBT)模块、二极管模块，MOSFET模块，智能功率(IPM)模块等。这些功率模块传统的封装形式存在一些固有的缺点，现以图2进行说明。图2所示的为传统的绝缘栅双极型晶体管模块封装形式中。传统的绝缘栅双极型晶体管模块包括绝缘栅双极型晶体管芯片7、二极管芯片3、绝缘基板(DBC)5、散热板6、功率端子2、铝线4、塑料外壳1以及硅凝胶8。由图2可见，传统的功率端子2是通过回流焊焊接到绝缘基板(DBC)5表面的导电铜层上的。因所用焊料的热胀系数与功率端子2、绝缘基板(DBC)5的导电铜层的热胀系数相差较大，所以在温度大幅度变化时会产生很大的应力，这样会降低模块的可靠性。所以为了提高模块在温度剧烈变化的条件下的可靠性，模块的功率端子2的底部结构一般设计成减小应力的形式，但是这样一来，应力问题的改善却使寄生电感不容易进行优化，造成寄生电感很大。
发明内容
本发明的目的是设计出一种功率端子直接键合的功率模块。
本发明要解决的是现有功率模块内部因功率端子带来的寄生电感大的问题。
本发明的技术方案是：包括芯片、绝缘基板、散热板、功率端子和外壳，功率端子直接固定在外壳上。
本发明的优点是：由于本发明改变了传统的功率端子焊接方式，直接将功率端子在外壳固定，所以它可以很大程度上减小热应力的影响。因此本发明的模块可以应用电感更小的功率端子，电感相比于传统的功率端子平均可以降低1/3左右，这将极大地改善了模块的使用性能。
附图说明
图1为本发明的结构示意图。
图2为传统绝缘栅双极型晶体管模块的结构示意图。
具体实施方式
下面结合附图及实施例对本发明作进一步说明。
本实施例的功率模块为绝缘栅双极型晶体管(IGBT)模块。如图1所示，本发明包括绝缘栅双极型晶体管芯片7、二极管芯片3、绝缘基板(DBC)5、散热板6、功率端子2、铝线4，塑料外壳1以及硅凝胶8，绝缘栅双极型晶体管芯片7与二极管芯片3回流焊接在绝缘基板(DBC)5导电铜层上，绝缘基板(DBC)又直接通过钎焊焊接在散热板6上。功率端子2直接固定在外壳1上。各芯片(绝缘栅双极型晶体管芯片7、二极管芯片3)之间、各芯片(绝缘栅双极型晶体管芯片7、二极管芯片3)与绝缘基板(DBC)5相应的导电层之间、以及功率端子2与绝缘基板(DBC)5上相应的引出处之间均通过铝线4键合来实现电气连接。
本发明模块内部绝缘栅双极型晶体管芯片7、二极管芯片3构成的组数至少一组。
在本发明模块的结构中，之所以只考虑选用较低寄生电感的功率端子2，其原因是：一是因为本发明的功率端子2直接固定在外壳上，所以不再需要考虑焊接处的热应力的影响。二是因为功率端子2很牢固地固定在外壳1内部，所以不用考虑安装的应力释放。三是因为本发明采用一次焊接工艺，所以可以依据芯片焊接性能的要求选择最合适的焊料，优化芯片的焊接性能。
本发明的生产方法如下：
首先在模块外壳1成型的时候将键合面经过特殊电镀处理的功率端子2固定在里面，然后按照传统的绝缘栅双极型晶体模块工艺生产，唯一与传统的工艺不同之处是在外壳封装之前将功率部分通过键合引出到功率端子2的键合面上。
本发明的功率模块除了上述绝缘栅双极型晶体管(IGBT)模块外，还包括二极管模块，MOSFET模块，智能功率(IPM)模块等模块。

Claims (4)

1、一种功率端子直接键合的功率模块，包括芯片、绝缘基板、散热板、功率端子和外壳，其特征在于功率端子直接固定在外壳上。
2、根据权利要求1所描述的功率端子直接键合的功率模块，其特征在于芯片回流焊接在绝缘基板导电铜层上，绝缘基板又直接焊接在散热板上。
3、根据权利要求1所描述的功率端子直接键合的功率模块，其特征在于芯片之间、芯片与绝缘基板相应的导电层之间、以及功率端子与绝缘基板上相应的引出处之间通过铝线键合来实现电气连接。
4、根据权利要求3所描述的功率端子直接键合的功率模块，其特征在于芯片绝缘栅双极型晶体管芯片和二极管芯片。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102738139A (zh) * 2012-06-05 2012-10-17 嘉兴斯达微电子有限公司 一种新型封装的功率模块
CN103178042A (zh) * 2011-12-26 2013-06-26 江苏宏微科技有限公司 实现功率模块超薄化封装的螺母
CN103779307A (zh) * 2014-01-25 2014-05-07 嘉兴斯达半导体股份有限公司 一种全免清洗软钎焊功率模块及制备方法
CN108110459A (zh) * 2017-12-22 2018-06-01 江苏宏微科技股份有限公司 一种大功率ipm模块端子连接结构
CN116153922A (zh) * 2023-02-15 2023-05-23 深圳吉华微特电子有限公司 大功率智能igbt模块及其加工工艺

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KR100343150B1 (ko) * 1998-11-26 2002-10-25 페어차일드코리아반도체 주식회사 금속터미널을구비하는전력반도체모쥴,전력반도체모쥴의금속터미널제조방법및전력반도체모쥴의제조방법
DE102006006423B4 (de) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und zugehöriges Herstellungsverfahren
CN100536130C (zh) * 2007-10-12 2009-09-02 上海大学 高散热多芯片集成大功率白光发光二极管模块及其制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103178042A (zh) * 2011-12-26 2013-06-26 江苏宏微科技有限公司 实现功率模块超薄化封装的螺母
CN102738139A (zh) * 2012-06-05 2012-10-17 嘉兴斯达微电子有限公司 一种新型封装的功率模块
CN103779307A (zh) * 2014-01-25 2014-05-07 嘉兴斯达半导体股份有限公司 一种全免清洗软钎焊功率模块及制备方法
CN108110459A (zh) * 2017-12-22 2018-06-01 江苏宏微科技股份有限公司 一种大功率ipm模块端子连接结构
CN108110459B (zh) * 2017-12-22 2024-04-30 江苏宏微科技股份有限公司 一种大功率ipm模块端子连接结构
CN116153922A (zh) * 2023-02-15 2023-05-23 深圳吉华微特电子有限公司 大功率智能igbt模块及其加工工艺

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