CN101667562A - 一种新型功率端子直接键合功率模块 - Google Patents

一种新型功率端子直接键合功率模块 Download PDF

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CN101667562A
CN101667562A CN200910102248A CN200910102248A CN101667562A CN 101667562 A CN101667562 A CN 101667562A CN 200910102248 A CN200910102248 A CN 200910102248A CN 200910102248 A CN200910102248 A CN 200910102248A CN 101667562 A CN101667562 A CN 101667562A
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power terminal
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金晓行
雷鸣
刘志宏
沈华
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JIAXING STARPOWER MICROELECTRONICS CO Ltd
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Abstract

本发明公开了一种新型功率端子直接键合功率模块，包括散热基板、直接覆铜基板、芯片、功率端子和外壳，其中外壳由上盖和下盖组成；功率端子使用机械方式插入下盖，且和下盖连接成一体；上盖通过功率端子上的两个凸起结构压住功率端子，保证功率端子在安装和使用的时候不被拉起。本发明消除了焊接疲劳，减小了寄生电感，大大提高了功率端子键合的可靠性。

Description

一种新型功率端子直接键合功率模块
技术领域
本发明涉及一种功率模块，具体地说是一种新型功率端子直接键合功率模块。
背景技术
功率模块包括绝缘栅双极型晶体管(IGBT)模块、整流二极管模块，快回复二极管模块，MOSFET模块，智能功率(IPM)模块等。这些功率模块传统的封装形式存在着许多问题，比如键合可靠性不高，寄生电感比较大等。现以图3为例进行说明。图3所示的为传统的绝缘栅双极型晶体管模块，传统的IGBT模块包括IGBT芯片14、二极管芯片16、直接覆铜基板(DBC)18、散热基板19、功率端子15、铝线13、塑料外壳12以及硅凝胶17。由图3可见，传统的功率端子15是通过软钎焊回流焊接到直接覆铜基板(DBC)18表面的导电铜层上。因所用焊料的热胀系数与功率端子15、绝缘基板(DBC)18的导电铜层的热胀系数有差别，而且软钎焊本身在热应力和温度作用下，容易产生疲劳，导致对模块的可靠性造成影响。特别是在温度大幅度变化时，模块会产生很大的应力，模块的可靠性被降低。所以为了提高模块在温度剧烈变化的条件下的可靠性，模块的功率端子15的底部结构.一般设计成减小应力的S弯形式，但是这样一来，应力问题的改善带来模块寄生电感的增加，影响了产品的性能。
发明内容
本发明的目的是设计出一种新型功率端子直接键合功率模块。
本发明要解决的是现有功率模块寄生电感高，键合可靠性低的问题。
为实现本发明的目的，本发明采用的技术方案是：
它包括散热基板、直接覆铜基板、芯片、功率端子和外壳，外壳由上盖和下盖组成；功率端子通过机械方式插紧在下盖的功率端子槽内，插紧后的功率端子和下盖连接成一体；功率端子上设有两个凸起结构，上盖上设有压舌，压舌压在凸起结构上。
本发明的又一特征是上盖和下盖使用螺丝钉固定在一起。
本发明的又一特征是直接覆铜基板通过软钎焊回流焊接到直接覆铜基板上，芯片通过软钎焊回流焊接到直接覆铜基板上。
本发明的又一特征是功率端子和直接覆铜基板之间通过铝线键合连接。
本发明的又一特征外壳的尺寸是94mmX34mmX17mm，或是94mmX48mmX17mm。
本发明的优点：本发明由于避免了传统的功率端子焊接方式，直接使用机器通过机械插入的方式将功率端子插紧于下盖的功率端子槽内固定，同时功率端子特殊的凸起结构和上盖压舌配合，所以本发明保证了功率端子在安装和使用的时候不被拉起，防止了功率端子键合区域的失效，使功率端子键合的可靠性大大提高。本发明可很大程度上减小了功率端子热应力的影响，消除了焊接疲劳，减小了寄生电感，极大地改善了模块的使用性能。
附图说明
图1为本发明的结构示意图。
图2为功率端子部分放大示意图。
图3为传统绝缘栅双极型晶体管模块的结构示意图。
具体实施方式
下面结合附图及实施例对本发明作进一步说明。
现以如图1和图2所示的绝缘栅双极型晶体管(IGBT)模块为例进行说明。本发明包括绝缘栅双极型晶体管芯片7、二极管芯片6、直接覆铜基板(DBC)8、散热基板5、功率端子4、上盖3和下盖9。
功率端子4通过机械方式插紧在下盖9的功率端子槽内，插紧后的功率端子4和下盖9连接成一体。功率端子4上设有凸起结构10和凸起结构11。上盖3上设有压舌2，压舌2压在凸起结构10和凸起结构11上。上盖3上设有三个螺母孔1。上盖3和下盖9使用螺丝钉固定在一起。
功率端子4的这种固定结构，保证了功率端子4在安装和使用的时候不被拉起，引起功率端子4键合区域的失效。本发明的功率端子4能承受200N力，该功率端子4很难从外壳上被拉脱。
绝缘栅双极型晶体管芯片7与二极管芯片6通过回流焊接在直接覆铜基板(DBC)8的导电铜层上。直接覆铜基板(DBC)8直接通过钎焊焊接在散热基板5上。绝缘栅双极型晶体管芯片7、二极管芯片6与直接覆铜基板(DBC)8相应的导电层之间通过铝线键合来实现电气连接，功率端子4与直接覆铜基板(DBC)8上相应的引出处之间通过铝线键合来实现电气连接。
本发明模块内部由一片绝缘栅双极型晶体管芯片7、一片二极管芯片6构成的芯片组至少一组。
本发明的外壳的尺寸是94mmX34mmX17mm，或是94mmX48mmX17mm。
本发明的功率模块之所以有较低的寄生电感，其原因：一是因为本发明的功率端子4直接固定在外壳上，没有使用容易疲劳的锡膏，所以不受焊接处热应力的影响。二是因为功率端子4很牢固地固定在下盖9内部，所以不用考虑安装的应力释放。三是因为本发明采用一次焊接工艺，所以可以依据芯片焊接性能的要求选择最合适的焊料，优化芯片的焊接性能。
本发明的生产方法如下：
首先注塑成型上盖3和下盖9，然后把功率端子4，用机器通过机械方式插入下盖9的功率端子槽内，然后按照传统的绝缘栅双极型晶体模块工艺生产。与传统的工艺不同之处是在外壳封装之前，功率部分键合引出到功率端子4的键合面上。
本发明功率端子4固定方式和具有的结构除了适用于所述的绝缘栅双极型晶体管(IGBT)模块外，还适用于整流二极管模块，续流二极管模块，MOSFET模块，智能功率(IPM)模块等功率模块。

Claims (5)

1、一种新型功率端子直接键合功率模块，包括散热基板、直接覆铜基板、芯片、功率端子和外壳，外壳由上盖和下盖组成，其特征是功率端子通过机械方式插紧在下盖的功率端子槽内，插紧后的功率端子和下盖连接成一体；功率端子上设有凸起结构，上盖上设有压舌，压舌压在凸起结构上。
2、根据权利要求1所述的一种新型功率端子直接键合功率模块，其特征是上盖和下盖使用螺丝钉固定在一起。
3、根据权利要求1所述的一种新型功率端子直接键合功率模块，其特征是直接覆铜基板通过软钎焊回流焊接到直接覆铜基板上，芯片通过软钎焊回流焊接到直接覆铜基板上。
4、根据权利要求1所述的一种新型功率端子直接键合功率模块，其特征是功率端子和直接覆铜基板之间通过铝线键合连接。
5、根据权利要求1所述的一种新型功率端子直接键合功率模块，其特征是外壳的尺寸是94mmX34mmX17mm，或是94mmX48mmX17mm。
CN200910102248A 2009-09-10 2009-09-10 一种新型功率端子直接键合功率模块 Pending CN101667562A (zh)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102082132A (zh) * 2010-11-03 2011-06-01 北京统合万方科技有限公司 一种大功率半导体模块结构及其封装
CN102427070A (zh) * 2011-12-14 2012-04-25 深圳市威怡电气有限公司 功率模块
CN103247543A (zh) * 2012-02-09 2013-08-14 富士电机株式会社 半导体器件的组装治具和用该治具的半导体器件制造方法
CN103579023A (zh) * 2012-08-06 2014-02-12 西安永电电气有限责任公司 焊接式电力半导体模块焊接方法
CN103769764A (zh) * 2014-01-25 2014-05-07 嘉兴斯达半导体股份有限公司 一种软钎焊的焊片和功率模块组装结构
CN103962772A (zh) * 2013-02-04 2014-08-06 西安永电电气有限责任公司 一种igbt一次焊接工装及其装配方法
CN107871734A (zh) * 2017-11-06 2018-04-03 中航（重庆）微电子有限公司 一种igbt模块

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102082132A (zh) * 2010-11-03 2011-06-01 北京统合万方科技有限公司 一种大功率半导体模块结构及其封装
CN102082132B (zh) * 2010-11-03 2015-11-11 北京航天万方科技有限公司 一种大功率半导体模块
CN102427070A (zh) * 2011-12-14 2012-04-25 深圳市威怡电气有限公司 功率模块
CN103247543A (zh) * 2012-02-09 2013-08-14 富士电机株式会社 半导体器件的组装治具和用该治具的半导体器件制造方法
CN103247543B (zh) * 2012-02-09 2016-02-10 富士电机株式会社 半导体器件的组装治具和用该治具的半导体器件制造方法
CN103579023A (zh) * 2012-08-06 2014-02-12 西安永电电气有限责任公司 焊接式电力半导体模块焊接方法
CN103962772A (zh) * 2013-02-04 2014-08-06 西安永电电气有限责任公司 一种igbt一次焊接工装及其装配方法
CN103769764A (zh) * 2014-01-25 2014-05-07 嘉兴斯达半导体股份有限公司 一种软钎焊的焊片和功率模块组装结构
CN107871734A (zh) * 2017-11-06 2018-04-03 中航（重庆）微电子有限公司 一种igbt模块

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