JP2018170362A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2018170362A JP2018170362A JP2017065618A JP2017065618A JP2018170362A JP 2018170362 A JP2018170362 A JP 2018170362A JP 2017065618 A JP2017065618 A JP 2017065618A JP 2017065618 A JP2017065618 A JP 2017065618A JP 2018170362 A JP2018170362 A JP 2018170362A
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Abstract
Description
で並行になるように配置され、シリコーンゲルで封止されている。半導体素子のオンオフ
に伴う温度サイクルにより、プリント基板が熱変形し、シリコーンゲル界面が剥離し絶縁
不良を引き起こすことがある。
力を緩和できる半導体モジュールを提供することである。
られた第1導電板と、前記第1導電板上に設けられた絶縁基板と、前記絶縁基板上に設け
られた第2導電板と、前記絶縁基板上に設けられた電極取り出し領域と、前記第2導電板
上に設けられた半導体素子と、前記電極取り出し領域と電気的に接続し、前記電気取り出
し領域と電気的に接続される面は前記設置面に対して垂直となるように配置されるプリン
ト基板と、前記金属基板と接合し、前記金属基板、前記第1導電板、絶縁基板、第2導電
板、前記電極取り出し領域、前記半導体素子、及び前記プリント基板の一部を囲む樹脂ケ
ースと、前記金属基板と前記樹脂ケースとに囲まれた領域に設けられたシリコーンゲルと
、を有する半導体モジュール。
は同一の符号を付し、一度説明した部材については適宜その説明を省略する。
のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸
法や比率が異なって表される場合もある。
本発明の第1実施形態について、図1から図3を用いて説明する。図1は、第1実施形
態に係る半導体モジュールを表す模式的上面図である。図2は、図1に示す第1実施形態
に係る半導体モジュールのA−A‘における模式的断面図である。図3は、プリント基板
6の平面図及び断面図である。
すように、半導体モジュール100は、金属基板1、絶縁基板2、半導体素子3、電極取
り出し領域4、主端子5、プリント基板6、樹脂ケース7、シリコーンゲル8、ボンディ
ングワイヤー9、補助端子10、第1導体11、第2導体12を備える。
絶縁基板2が半田によって接続され、さらにその絶縁基板2上に第2導体12、電極取り
出し領域4、主端子5がそれぞれ半田によって設けられている。第2導体上には、半導体
素子3が設けられている。ボンディングワイヤー9によって、半導体素子3の表面電極と
電極取り出し領域4が接続されている。また、ボンディングワイヤー9によって、半導体
素子3の表面電極と主端子5とがそれぞれ接続されている。
た内部はシリコーンゲル8で充填されている。
助端子10に接続され、固定されている。
ート抵抗12、駆動回路13、自己保護機能回路14等が実装される。プリント基板6は
、金属基板1と絶縁基板2の界面方向に対して垂直に配置されており、且つ、半導体素子
3と平面方向で重ならないように配置されている。
が接合した形状を有している。プリント基板6を、金属基板1と絶縁基板2の界面方向に
対して垂直に配置する際に、縁部22において湾曲する。この縁部22にフレキシブル基
板21が用いられ、その他のプリント基板6にはリジット型基板20が用いられる。縁部
22に関係なく、プリント基板6を全てリジット型基板20にて構成してもよい。
てもよい。また、主成分として金属およびセラミック(例えば、アルミ炭化ケイ素複合材
)を含有してもよい。
えば主にガラスエポキシ樹脂からなる。
ここで、第1の実施形態に係る半導体モジュール100の作用および効果について、図
1から図6を用いて説明する。
返す。この温度サイクルにより、プリント基板6等は膨張、圧縮を繰り返し、その都度応
力が発生する。
絶縁基板2の界面方向に対し、垂直方向に配置され、且つボンディグワイヤー9の上を回
避するように配置されている。
が熱変形し、シリコーンゲル8が圧縮される。しかし、本実施形態に係る半導体モジュー
ル100の場合、シリコーンゲル8は、全面をプリント基板6、補助端子10、絶縁基板
2等で囲まれていないため、シリコーンゲル8の容量は減少せず、収縮時にかかる応力は
低減する。
合界面が剥がれにくくなる。また、絶縁基板2とシリコーンゲル8の界面、半導体素子3
とシリコーンゲル8界面の剥離が抑制され、半導体モジュール100の絶縁破壊を抑制で
きる。
、本発明の第1の実施形態に係る半導体モジュール100についての効果をさらに説明す
る。
複数の素子の接続を目的としたプリント基板6が内蔵されている。半導体モジュール10
0とおおむね構成要素は変わらないが、半導体素子3とプリント基板6は平面で並行にな
るように配置され、ボンディングワイヤー9の上にプリント基板6が位置している点で異
なっている。
示す。シリコーンゲルの移動方向及び応力は、図6に図示した矢印の向きに働く。
プリント基板6が熱膨張することで、プリント基板6の下に位置する内部のシリコーンゲ
ル8は、F1方向に押し出される。次に、冷却時には、プリント基板6は熱収縮する。熱
収縮した場合には、内部のシリコーンゲル8の量が減少しているため、ボンディングワイ
ヤー9に引っ張り応力F2が働く。
生する。
一方で、プリント基板6とシリコーンゲル8が接触する起点の引っ張り応力は小さくなる
。したがって、プリント基板6とシリコーンゲル8の界面が剥離し絶縁不良を起こしやす
い。さらに、熱変形による引っ張り応力によって、ボンディングワイヤー9が持ち上げら
れる。結果、ボンディングワイヤー9は、半導体素子3の表面電極や電極取り出し領域4
との接合面において、接触不良を起こし、信頼性の低下を招くこととなる。
この対策として、開口部を広げる手法があるが、開口部を広げるということは、半導体モ
ジュールの素子領域において、有効面積を減らすこととなる。また、開口部を広げる分、
半導体素子に抵抗が大きくのってしまう。
金属基板1と絶縁基板2の界面方向に対し、垂直に配置され、且つ半導体素子3の上及び
ボンディグワイヤー9の上を回避するように配置される。プリント基板6を金属基板1と
絶縁基板2の界面方向に対し、垂直方向に配置することによって、プリント基板6の熱変
形によるシリコーンゲル8への応力が低減する。引っ張り応力の低下により、プリント基
板6とシリコーンゲル8の界面が剥離し絶縁不良を及ぼす可能性を軽減することができる
。
とができるため、熱変形による引っ張り応力によって、ボンディングワイヤー9が持ち上
げられることがない。よって、ボンディングワイヤー9が半導体素子3の表面電極と、電
極取り出し領域4との各接合部において、接触不良を起こすことを防ぐことができる。
ことができる。開口部を広げ、有効面積を削ることなくクラック発生の可能性を軽減でき
る。
6の熱変形によるシリコーンゲル8への応力が緩和され、半導体素子3の表面電極に接続
されるボンディングワイヤー9との接合界面の剥離、絶縁基板2とシリコーンゲル8、半
導体素子3とシリコーンゲル8との接合界面の剥離が抑制される。したがって、半導体モ
ジュール100は、絶縁破壊を抑制することが可能となる。
発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な
形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き
換え、変更を行うことができる。実施形態に含まれる、各要素の具体的な構成に関しては
、当業者が公知の技術から適宜選択することが可能である。これらの実施形態は、発明の
範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含
まれる。
2?絶縁基板
3 半導体素子
4 電極取り出し領域
5 主端子
6 プリント基板
7 樹脂ケース
8 シリコーンゲル
9 ボンディングワイヤー
10 補助端子
11 第1導体
12 第2導体
13 信号端子
14 ゲート抵抗
15 駆動回路
16 自己保護機能回路
20 フレキシブル基板
21 リジット方基板
100、200 半導体モジュール
Claims (3)
- 設置面を有する金属基板と、
前記設置面上に設けられた第1導電板と、
前記第1導電板上に設けられた絶縁基板と、
前記絶縁基板上に設けられた第2導電板と、
前記絶縁基板上に設けられた電極取り出し領域と、
前記第2導電板上に設けられた半導体素子と、
前記電極取り出し領域と電気的に接続し、前記電気取り出し領域と電気的に接続される
面は前記設置面に対して垂直となるように配置されるプリント基板と、
前記金属基板と接合し、前記金属基板、前記第1導電板、絶縁基板、第2導電板、前記
電極取り出し領域、前記半導体素子、及び前記プリント基板の一部を囲む樹脂ケースと、
前記金属基板と前記樹脂ケースとに囲まれた領域に設けられたシリコーンゲルと、
を有する半導体モジュール。 - 前記プリント基板は、
前記樹脂ケースと前記シリコーンゲルとの界面方向において、前記半導体素子及び前記
ボンディングワイヤーと同一直線上に位置しない請求項1に記載の半導体モジュール。 - 前記プリント基板は、信号端子及びゲート抵抗を含み、
リジット型基板とフレキシブル基板が一体化されている請求項1または2に記載の半導体
モジュール。
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