JP2006324401A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 229920005989 resin Polymers 0.000 claims abstract description 178
- 239000011347 resin Substances 0.000 claims abstract description 178
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000002347 injection Methods 0.000 claims description 57
- 239000007924 injection Substances 0.000 claims description 57
- 239000002994 raw material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 238000000465 moulding Methods 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 description 18
- 239000000945 filler Substances 0.000 description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/181—Encapsulation
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Abstract
【解決手段】パワー用半導体素子チップ5a,5bを封止する第2のモールド樹脂3の熱伝導率を、制御用ICチップ7を封止する第1のモールド樹脂2の熱伝導率よりも高くする。大電流の流れるパワー用半導体素子チップ5a,5bから発生する熱を、高熱伝導の第2のモールド樹脂3から有効に放熱することができ、半導体装置100の放熱特性が向上する。
【選択図】図2
Description
本実施の形態は、パワー用半導体素子チップを封止するモールド樹脂の熱伝導率を、制御用ICチップを封止するモールド樹脂の熱伝導率よりも高くすることにより、放熱性を高めた半導体装置、および、その製造方法である。
本実施の形態は、実施の形態1に係る半導体装置の製造方法の変形例であって、実施の形態1における第1および第2のモールド樹脂2,3に加えて、第3のモールド樹脂により樹脂注入空間24のうち制御用ICチップ7およびパワー用半導体素子チップ5a,5b以外の他の部分を封止したものである。
本実施の形態は、実施の形態1に係る半導体装置の製造方法の変形例であって、実施の形態1における金型200の樹脂注入空間24のうち制御用ICチップ7の下方に、金型の凸部を設けたものである。
Claims (5)
- パワー用半導体素子が形成されたパワー用半導体素子チップと、
前記パワー用半導体素子を制御する制御用IC(Integrated Circuit)が形成された制御用ICチップと、
前記パワー用半導体素子チップおよび前記制御用ICチップを封止したモールド樹脂パッケージと
を備え、
前記モールド樹脂パッケージには、
前記制御用ICチップを封止する第1のモールド樹脂と、
前記パワー用半導体素子チップを封止する第2のモールド樹脂と
が含まれ、
前記第2のモールド樹脂の熱伝導率は、前記第1のモールド樹脂の熱伝導率よりも高い
半導体装置。 - (a)パワー用半導体素子が形成されたパワー用半導体素子チップ、および、前記パワー用半導体素子を制御する制御用IC(Integrated Circuit)が形成された制御用ICチップを、リードフレーム上にダイボンディングする工程と、
(b)前記パワー用半導体素子チップと前記リードフレームと、および、前記制御用ICチップと前記リードフレームと、をそれぞれワイヤボンディングする工程と、
(c)ワイヤボンディングされた前記パワー用半導体素子チップ、前記制御用ICチップおよび前記リードフレームを、金型内の樹脂注入空間に配置する工程と、
(d)第1のモールド樹脂を前記樹脂注入空間に注入して、前記制御用ICチップを前記第1のモールド樹脂により封止する工程と、
(e)第2のモールド樹脂を前記樹脂注入空間に注入して、前記パワー用半導体素子チップを前記第2のモールド樹脂により封止する工程と
を備え、
工程(d)の注入時における前記第1のモールド樹脂の粘度は、工程(e)の注入時における前記第2のモールド樹脂の粘度よりも低く、
前記第2のモールド樹脂の熱伝導率は、前記第1のモールド樹脂の熱伝導率よりも高い
半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、工程(d)および(e)の前に、
(f)前記樹脂注入空間に注入口を介して連結可能なチャンバ内に、前記第1のモールド樹脂の原料となる第1タブレットと前記第2のモールド樹脂の原料となる第2タブレットとを並べて配置する工程と、
(g)前記チャンバ内を加熱して前記第1及び第2タブレットを溶解させる工程と
を備え、
前記注入口から見た前記第1及び第2タブレットの配置が、前記樹脂注入空間内での前記制御用ICチップおよび前記パワー用半導体素子チップの配置に対応した
半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、
(h)第3のモールド樹脂を前記樹脂注入空間に注入して、樹脂注入空間のうち前記制御用ICチップおよび前記パワー用半導体素子チップ以外の他の部分を前記第3のモールド樹脂により封止する工程
をさらに備え、
工程(h)の注入時における前記第3のモールド樹脂の粘度は、工程(e)の注入時における前記第2のモールド樹脂の粘度よりも低い
半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、
前記樹脂注入空間のうち前記制御用ICチップの下方には、前記金型の凸部が設けられた
半導体装置の製造方法。
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810360A (zh) * | 2014-01-28 | 2015-07-29 | 三星电机株式会社 | 电源模块封装以及制造电源模块封装的方法 |
KR20160143802A (ko) * | 2014-05-12 | 2016-12-14 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 장치 및 그 제조 방법 |
JP2018029149A (ja) * | 2016-08-19 | 2018-02-22 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
CN109300795A (zh) * | 2018-09-27 | 2019-02-01 | 苏州钱正科技咨询有限公司 | 一种半导体功率器件封装及其制备方法 |
US20190057928A1 (en) * | 2016-02-09 | 2019-02-21 | Mitsubishi Electric Corporation | Power semiconductor apparatus and manufacturing method therefor |
CN115763381A (zh) * | 2022-11-17 | 2023-03-07 | 海信家电集团股份有限公司 | 智能功率模块和设备 |
Families Citing this family (1)
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US11152275B2 (en) | 2016-03-07 | 2021-10-19 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing semiconductor device |
-
2005
- 2005-05-18 JP JP2005145355A patent/JP4463146B2/ja active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810360A (zh) * | 2014-01-28 | 2015-07-29 | 三星电机株式会社 | 电源模块封装以及制造电源模块封装的方法 |
KR20160143802A (ko) * | 2014-05-12 | 2016-12-14 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 장치 및 그 제조 방법 |
KR101915873B1 (ko) | 2014-05-12 | 2018-11-06 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 장치 및 그 제조 방법 |
US20190057928A1 (en) * | 2016-02-09 | 2019-02-21 | Mitsubishi Electric Corporation | Power semiconductor apparatus and manufacturing method therefor |
US11107746B2 (en) * | 2016-02-09 | 2021-08-31 | Mitsubishi Electric Corporation | Power semiconductor apparatus and manufacturing method therefor |
JP2018029149A (ja) * | 2016-08-19 | 2018-02-22 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
CN109300795A (zh) * | 2018-09-27 | 2019-02-01 | 苏州钱正科技咨询有限公司 | 一种半导体功率器件封装及其制备方法 |
CN115763381A (zh) * | 2022-11-17 | 2023-03-07 | 海信家电集团股份有限公司 | 智能功率模块和设备 |
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