JP5737272B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5737272B2 JP5737272B2 JP2012249971A JP2012249971A JP5737272B2 JP 5737272 B2 JP5737272 B2 JP 5737272B2 JP 2012249971 A JP2012249971 A JP 2012249971A JP 2012249971 A JP2012249971 A JP 2012249971A JP 5737272 B2 JP5737272 B2 JP 5737272B2
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- resin
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- 239000004065 semiconductor Substances 0.000 title claims description 62
- 229920005989 resin Polymers 0.000 claims description 124
- 239000011347 resin Substances 0.000 claims description 124
- 239000003990 capacitor Substances 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000003985 ceramic capacitor Substances 0.000 claims description 13
- 230000000630 rising effect Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 230000008602 contraction Effects 0.000 description 13
- 238000005192 partition Methods 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920000915 polyvinyl chloride Polymers 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49589—Capacitor integral with or on the leadframe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
3:コンデンサ
4a、4b:金属板
5:トランジスタ
6:金属スペーサ
8a、8b:リードフレーム(電極板)
9:ハンダ材
12、12a:低剛性樹脂
13:樹脂モールド体
14:空隙
15:仕切板
19:制御電極
Claims (3)
- 半導体素子とコンデンサが第1樹脂でモールドされているとともに第1樹脂の樹脂モールドの両側に取り付けられたリードフレームの夫々と接続されている半導体装置であり、
前記コンデンサは、前記リードフレームの夫々から立ち上がっている金属板によって前記リードフレームの夫々から離れて保持されており、
前記第1樹脂よりも剛性が低い第2樹脂で前記コンデンサが覆われておりその外側が前記第1樹脂でモールドされているとともに、前記リードフレームの夫々と前記コンデンサの間に前記第2樹脂の層が形成されていることを特徴とする半導体装置。 - 半導体素子とコンデンサが第1樹脂でモールドされているとともに第1樹脂の樹脂モールドの両側に取り付けられたリードフレームの夫々と接続されている半導体装置であり、
前記コンデンサは、前記リードフレームの夫々から立ち上がっている金属板によって前記リードフレームの夫々から離れて保持されており、
モールドしている前記第1樹脂と前記コンデンサの間に空隙が設けられているとともに、前記リードフレームの夫々と前記コンデンサの間にも空隙が設けられていることを特徴とする半導体装置。 - 前記コンデンサはセラミックコンデンサであることを特徴とする請求項1又は2に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012249971A JP5737272B2 (ja) | 2012-11-14 | 2012-11-14 | 半導体装置 |
US14/056,148 US9013047B2 (en) | 2012-11-14 | 2013-10-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012249971A JP5737272B2 (ja) | 2012-11-14 | 2012-11-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014099487A JP2014099487A (ja) | 2014-05-29 |
JP5737272B2 true JP5737272B2 (ja) | 2015-06-17 |
Family
ID=50680928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012249971A Active JP5737272B2 (ja) | 2012-11-14 | 2012-11-14 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9013047B2 (ja) |
JP (1) | JP5737272B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6136978B2 (ja) * | 2014-02-25 | 2017-05-31 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
WO2016108261A1 (ja) * | 2014-12-29 | 2016-07-07 | 三菱電機株式会社 | パワーモジュール |
US9681568B1 (en) * | 2015-12-02 | 2017-06-13 | Ge Energy Power Conversion Technology Ltd | Compact stacked power modules for minimizing commutating inductance and methods for making the same |
EP3761492B1 (en) * | 2019-07-05 | 2023-01-04 | Infineon Technologies AG | Snubber circuit and power semiconductor module with snubber circuit |
JP7105214B2 (ja) * | 2019-07-24 | 2022-07-22 | 株式会社日立製作所 | パワー半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001210758A (ja) * | 2000-01-28 | 2001-08-03 | Mitsubishi Electric Corp | 半導体パワーモジュール |
JP3841007B2 (ja) * | 2002-03-28 | 2006-11-01 | 株式会社デンソー | 半導体装置 |
JP2006186136A (ja) * | 2004-12-28 | 2006-07-13 | Toshiba Corp | 両面部品実装回路基板及びその製造方法 |
US7598606B2 (en) * | 2005-02-22 | 2009-10-06 | Stats Chippac Ltd. | Integrated circuit package system with die and package combination |
JP4661645B2 (ja) | 2005-03-23 | 2011-03-30 | トヨタ自動車株式会社 | パワー半導体モジュール |
TWI320594B (en) * | 2006-05-04 | 2010-02-11 | Cyntec Co Ltd | Package structure |
JP2009081279A (ja) * | 2007-09-26 | 2009-04-16 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2009135279A (ja) * | 2007-11-30 | 2009-06-18 | Toppan Printing Co Ltd | セラミックチップ部品 |
JP2010056206A (ja) | 2008-08-27 | 2010-03-11 | Toyota Motor Corp | 半導体モジュール |
JP5228847B2 (ja) * | 2008-11-28 | 2013-07-03 | 株式会社デンソー | 電子装置およびその製造方法 |
JP5212088B2 (ja) * | 2008-12-25 | 2013-06-19 | 株式会社デンソー | 半導体モジュール冷却装置 |
JP5218541B2 (ja) | 2010-12-14 | 2013-06-26 | 株式会社デンソー | スイッチングモジュール |
-
2012
- 2012-11-14 JP JP2012249971A patent/JP5737272B2/ja active Active
-
2013
- 2013-10-17 US US14/056,148 patent/US9013047B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20140131845A1 (en) | 2014-05-15 |
US9013047B2 (en) | 2015-04-21 |
JP2014099487A (ja) | 2014-05-29 |
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